Texas Instruments TPD1E0B04, TPD1E04U04 User Manual

User's Guide
SLVUAN6–June 2016
TPD1E0B04 Evaluation Module
Contents
1 Introduction ................................................................................................................... 2
2 Definitions..................................................................................................................... 2
3 Setup .......................................................................................................................... 3
3.1 IEC 61000-4-2 ESD Rating Tests ................................................................................ 3
3.2 Scattering Parameters ............................................................................................. 4
3.3 ±8-kV ESD Clamping Waveforms ................................................................................ 4
4 Board Layout ................................................................................................................. 6
5 Schematics ................................................................................................................... 6
6 Bill of Materials............................................................................................................... 7
List of Figures
1 Ideal Contact Discharge Waveform of the Output Current of the ESD Simulator at 4-kV ......................... 3
2 System Level ESD Test Setup............................................................................................. 4
3 TPD1E0B04EVM Top Layer and Silkscreen............................................................................. 6
4 TPD1E0B04EVM Schematic ............................................................................................... 6
List of Tables
1 IEC 61000-4-2 Test Levels ................................................................................................ 2
2 Waveform Parameters in Contact Discharge Mode..................................................................... 2
3 Bill of Materials............................................................................................................... 7
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Introduction
1 Introduction
Texas Instrument’s TPD1E0B04 evaluation module helps designers evaluate the operation and performance of the TPD1E0B04 device. The TPD1E0B04 is a unidirectional TVS ESD protection diode for HDMI 2.0 and USB 3.1 Gen II Super-speed data line protection. The TPD1E0B04 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).
The EVM contains six TPD1E0B04s. Five TPD1E0B04s (D1 – D5) are configured with test points for striking ESD to the protection pins. One TPD1E0B04 (D6) is configured with 2 SMA (J1 and J2) connectors for 2-port analysis with a vector network analyzer. TPD1E0B04 (D6) can also be used for capturing clamping waveforms with an oscilloscope during an ESD test. Caution must be taken when capturing clamping waveforms during an ESD event so as not to damage the oscilloscope. A proper procedure is outlined in Section 3.3.1.
2 Definitions
Contact Discharge — a method of testing in which the electrode of the ESD simulator is held in contact
with the device-under-test (DUT).
Air Discharge — a method of testing in which the charged electrode of the ESD simulator approaches
the DUT, and a spark to the DUT actuates the discharge.
ESD Simulator — a device that outputs IEC 61000-4-2 compliance ESD waveforms shown in Figure 1
with adjustable ranges shown in Table 1 and Table 2. IEC 61000-4-2 has 4 classes of protection levels. Classes 1 – 4 are shown in Table 1. Stress tests
must be incrementally tested to level 4 as shown in Table 2 until the point of failure. If the DUT does not fail at 8-kV, testing can continue in 2-kV increments until failure.
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Contact Discharge Air Discharge
Class Test Voltage [± kV] Class Test Voltage [± kV]
1 2 1 2 2 4 2 4 3 6 3 8 4 8 4 15
Table 2. Waveform Parameters in Contact Discharge Mode
Stress Level Step Simulator Voltage
[kV]
1 2 7.5 0.8 4 2 2 4 15 0.8 8 4 3 6 22.5 0.8 12 6 4 8 30 0.8 16 8
Table 1. IEC 61000-4-2 Test Levels
Ipeak ±15%
[A]
Rise Time ±25%
[ns]
Current at 30 ns
±30% [A]
Current at 60 ns
±30% [A]
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0
10
20
30
0 20 40 60 80 100
Current (A)
Time (ns)
I
PEAK
90% I
PEAK
10% I
PEAK
800 ps 90/10 rise time
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Figure 1. Ideal Contact Discharge Waveform of the Output Current of the ESD Simulator at 4-kV
3 Setup
This section describes the intended use of the EVM. A generalized outline of the procedure given in IEC 61000-4-2 is described here. IEC 61000-4-2 must be referred to for a more specific testing outline. Basic configurations for collecting s-parameters and ESD clamping waveforms are outlined as well.
3.1 IEC 61000-4-2 ESD Rating Tests
TPD1E0B04 (D1 – D5) can be used for destructive electrostatic discharge (ESD) pass or fail strikes. Specifically, they can be used for both IEC 61000-4-2 air and contact discharge tests. The procedure in
Section 3.1.1 ensures proper testing setup and method for both discharge tests. Each IO has a Test Pad
(TP1 – TP5) directly connected to it for striking ESD.
Setup
3.1.1 Test Method and Set-Up
An example test setup is shown in Figure 2. Details of the testing table and ground planes can be found in the IEC 61000-4-2 test procedure. Ground the EVM using the banana connector J3. Discharge the ESD simulator on any of the test points TP1 – TP5. Contact and air-gap discharge are tested using the same simulator with the same discharge waveform. While the simulator is in direct contact with the test point during contact, it is not during air-gap.
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ESD Simulator
Typical Position for Direct Discharge
Ground Reference Plane
Power and Ground Connection
DUT or System
Horizontal Coupling Plane (HCP)
To Wall Ground
470 kO
470 kO
Non-conducting Table
Insulation
Setup
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3.1.2 Evaluation of Test Results
3.2 Scattering Parameters
3.3 ±8-kV ESD Clamping Waveforms
Figure 2. System Level ESD Test Setup
Connect the tested device on the EVM to a curve tracer both before and after ESD testing. After each incremental level, if the IV-curve of the ESD protection diode shifts ±0.1 V, or leakage current increases by a factor of ten, then the device is permanently damaged by ESD.
A TPD1E0B04 (D6) is configured with 2 SMA (J1 and J2) connectors to allow 2-port analysis with a vector network analyzer. Connect Port 1 to J1 and Port 2 to J2. This configuration allows for the following terminology in 2-port analysis:
S11: Return loss
S21: Insertion loss
A TPD1E0B04 (D6) has two SMA connectors (J1 and J2) which can be used for capturing clamping waveforms with an oscilloscope during an ESD strike. Caution must be taken when capturing clamping waveforms during an ESD event so as not to damage the oscilloscope. The procedures in Section 3.3.1 outlines a proper method.
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3.3.1 Oscilloscope Setup
Without a proper procedure, capturing ESD clamping waveforms exposes the oscilloscope to potential voltages higher than the rating of the equipment. Proper methodology can mitigate any risk in this operation.
Recommended Measurement Equipment:
One 2-GHz bandwidth (minimum of 1 GHz) oscilloscope.
Two 10X 50-attenuators
One 50-shielded SMA cable.
Procedure
In order to protect the oscilloscope, attenuation of the measured signal is required. Here is a procedure for testing D3:
1. Ground the EVM using the banana connector J3.
2. Attach two 10X attenuators in series to the oscilloscope channel being used.
3. Attach the 50-shielded SMA cable between J2 and the attenuators.
4. Set the scope attenuation factor to 100X.
5. Set the oscilloscope to trigger on a positive edge for (+) ESD and a negative edge for (–) ESD strikes.
The trigger voltage magnitude must be set to 20 V.
6. Following Section 3.1.1, strike contact ESD to J1.Pin1. Recommended settings for the time axis is 20 ns/div and for the voltage axis is 10 V division. The voltage levels of the ESD applied to J1.Pin1 must not exceed ±8 kV while capturing clamping
waveforms.
Setup
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Board Layout
4 Board Layout
This section provides the TPD1E0B04EVM board layout. TPD1E0B04EVM is a 4-layer board of FR408HR at 0.062 inch thickness. Layers 2, 3, and 4 are ground planes and not shown here.
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5 Schematics
Figure 3. TPD1E0B04EVM Top Layer and Silkscreen
Figure 4. TPD1E0B04EVM Schematic
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6 Bill of Materials
Bill of Materials
Table 3. Bill of Materials
Count RefDes Description Package
6 D1, D2, D3, D4,
D5, D6
2 J1, J2 Connector, TH, End launch
1 J3 Standard Banana Jack,
1-Channel ESD Protection
Device for Super-Speed (up
to 6 Gbps) Interface,
DPL0002A
SMA 50 Ω
Insulated, Black
Reference
DPL0002A TPD1E0B04DPL Texas Instruments
Connector, TH,
End launch SMA
6092 6092 Keystone
Part Number MFR
142-0761-881 Johnson
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