Texas Instruments TPA711EVM, TPA711MSOPEVM, TPA711DR, TPA711DGNR, TPA711DGN Datasheet
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TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Fully Specified for 3.3-V and 5-V Operation
D
Wide Power Supply Compatibility
2.5 V – 5.5 V
D
Output Power
– 700 mW at VDD = 5 V, BTL, RL = 8 Ω
– 85 mW at V
DD
= 5 V, SE, RL = 32 Ω
– 250 mW at VDD = 3.3 V, BTL, RL = 8 Ω
– 37 mW at VDD = 3.3 V, SE, RL = 32 Ω
D
Shutdown Control
– IDD = 7 µA at 3.3 V
– IDD = 50 µA at 5 V
D
BTL to SE Mode Control
D
Integrated Depop Circuitry
D
Thermal and Short-Circuit Protection
D
Surface-Mount Packaging
– SOIC
– PowerP AD MSOP
description
The TPA711 is a bridge-tied load (BTL) or
single-ended (SE) audio power amplifier developed especially for low-voltage applicationswhere internal speakers and external earphone operation are
required. Operating with a 3.3-V supply , the TPA711 can deliver 250-mW of continuous power into a BTL 8-Ω
load at less than 0.6% THD+N throughout voice band frequencies. Although this device is characterized out
to 20 kHz, its operation was optimized for narrower band applications such as wireless communications. The
BTL configuration eliminates the need for external coupling capacitors on the output in most applications, which
is particularly important for small battery-powered equipment. A unique feature of the TP A711 is that it allows
the amplifier to switch from BTL to SE
on the fly
when an earphone drive is required. This eliminates complicated
mechanical switching or auxiliary devices just to drive the external load. This device features a shutdown mode
for power-sensitive applications with special depop circuitry to eliminate speaker noise when exiting shutdown
mode. The TPA711 is available in an 8-pin SOIC and the surface-mount PowerPAD MSOP package, which
reduces board space by 50% and height by 40%.
Audio
Input
Bias
Control
V
DD
700 mW
6
5
7
VO+
V
DD
3
1
24BYPASS
IN
SE/BTL
VDD/2
C
I
R
I
C
S
C
B
R
F
SHUTDOWN
From HP Jack
VO–8
GND
From System Control
–
+
–
+
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
8
7
6
5
SHUTDOWN
BYPASS
SE/BTL
IN
V
O
–
GND
V
DD
VO+
D OR DGN PACKAGE
(TOP VIEW)
PowerPAD is a trademark of Texas Instruments.
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
SMALL OUTLINE
†
(D)
MSOP
‡
(DGN)
MSOP
SYMBOLIZATION
–40°C to 85°C TPA711D TPA711DGN ABB
†
In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW
peaks can be driven, as long as the RMS value is less than 350 mW.
‡
The D and DGN packages are available taped and reeled. T o order a taped and reeled part, add
the suffix R to the part number (e.g., TP A311DR).
Terminal Functions
TERMINAL
NAME NO.
I/O
DESCRIPTION
BYPASS 2 I
BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to
a 0.1-µF to 2.2-µF capacitor when used as an audio amplifier.
GND 7 GND is the ground connection.
IN 4 I IN is the audio input terminal.
SE/BTL 3 I When SE/BTL is held low, the TP A71 1 is in BTL mode. When SE/BTL is held high, the TP A711 is in SE mode.
SHUTDOWN 1 I SHUTDOWN places the entire device in shutdown mode when held high (IDD = 7 µA).
V
DD
6 VDD is the supply voltage terminal.
VO+ 5 O VO+ is the positive output for BTL and SE modes.
VO– 8 O VO– is the negative output in BTL mode and a high-impedance output in SE mode.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
§
Supply voltage, VDD 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, VI –0.3 V to VDD +0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation internally limited (see Dissipation Rating Table). . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
(see Table 3) –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating junction temperature range, TJ –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
§
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C DERA TING FACTOR TA = 70°C TA = 85°C
D 725 mW 5.8 mW/°C 464 mW 377 mW
DGN 2.14 W
¶
17.1 mW/°C 1.37 W 1.11 W
¶
Please see the Texas Instruments document,
PowerPAD Thermally Enhanced Package Application Report
(literature number SLMA002), for more information on the PowerPAD package. The thermal data was
measured on a PCB layout based on the information in the section entitled
T exas Instruments Recommended
Board for PowerPAD
on page 33 of the before mentioned document.
recommended operating conditions
MIN MAX UNIT
Supply voltage, V
DD
2.5
5.5
V
Operating free-air temperature, TA (see Table 3)
–40
85
°C
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3.3 V , TA = 25°C (unless otherwise
noted)
PARAMETER TEST CONDITIONS
MIN TYP MAX UNIT
V
OO
ББББББББББББББ
Output offset voltage (measured differentially)
See Note 1
20
mV
ББББББББББББББ
pp
BTL mode
85
PSRR
ББББББББББББББ
Power supply rejection ratio
V
DD
= 3.2 V to 3.4
V
SE mode
83
dB
ББББББББББББББ
pp
BTL mode
1.25
2.5
I
DD
ББББББББББББББ
Supply current (see Figure 6)
SE mode
0.65
1.25
mA
I
DD(SD)
Supply current, shutdown mode (see Figure 7)
7
50
µA
NOTE 1: At 3 V < VDD < 5 V the dc output voltage is approximately VDD/2.
operating characteristics, VDD = 3.3 V, T
A
= 25°C, RL = 8 Ω
PARAMETER TEST CONDITIONS
MIN TYP MAX UNIT
БББББББББ
THD = 0.2%,
BTL mode,
See Figure 14
250
P
O
БББББББББ
Output power, see Note 2
THD = 0.1%,
See Figure 22
SE mode,
RL = 32 Ω,
37
mW
THD + N
БББББББББ
Total harmonic distortion plus noise
PO = 250 mW,
f = 200 Hz to 4 kHz,
See Figure 12
0.55%
B
OM
БББББББББ
Maximum output power bandwidth
Gain = 2,
THD = 2%,
See Figure 12
20
kHz
B
1
БББББББББ
Unity-gain bandwidth
Open Loop,
See Figure 36
1.4
MHz
ÁÁ
Á
БББББББББ
ББББББББ
Á
pp
pp
ÁÁÁ
Á
f = 1 kHz,
See Figure 5
ÁÁÁÁ
Á
CB = 1 µF,
ÁÁÁ
Á
BTL mode,
ÁÁÁ
Á
79
ÁÁÁ
Á
Supply ripple rejection ratio
f = 1 kHz,
See Figure 3
CB = 1 µF,
SE mode,
70
dB
V
n
Noise output voltage
Gain = 1,
CB = 0.1 µF,
See Figure 42
17
µV(rms)
NOTE 2: Output power is measured at the output terminals of the device at f = 1 kHz.
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V , TA = 25°C (unless otherwise
noted)
PARAMETER TEST CONDITIONS
MIN TYP MAX UNIT
V
OO
Output offset voltage (measured differentially)
20
mV
pp
BTL mode
78
PSRR
Power supply rejection ratio
V
DD
= 4.9 V to 5.1
V
SE mode
76
dB
pp
BTL mode
1.25
2.5
IDDSupply current (see Figure 6)
SE mode
0.65
1.25
mA
I
DD(SD)
Supply current, shutdown mode (see Figure 7)
50
100
µA
operating characteristics, VDD = 5 V, T
A
= 25°C, RL = 8 Ω
PARAMETER TEST CONDITIONS
MIN TYP MAX UNIT
THD = 0.3%,
BTL mode,
See Figure 18
700
†
ÁÁ
Á
P
O
ББББББББ
Á
Output power, see Note 2
ÁÁÁ
Á
THD = 0.1%,
See Figure 26
ÁÁÁÁ
Á
SE mode,
ÁÁÁ
Á
RL = 32 Ω,
ÁÁÁ
Á
85
ÁÁÁ
Á
mW
THD + N
Total harmonic distortion plus
noise
PO = 700 mW,
f = 200 Hz to 4 kHz,
See Figure 16
0.5%
B
OM
Maximum output power bandwidth
Gain = 2,
THD = 2%,
See Figure 16
20
kHz
B
1
Unity-gain bandwidth
Open Loop,
See Figure 37
1.4
MHz
ÁÁÁББББББББ
Á
pp
pp
ÁÁÁ
Á
f = 1 kHz,
See Figure 5
ÁÁÁÁ
Á
CB = 1 µF,
ÁÁÁ
Á
BTL mode,
ÁÁÁ
Á
80
ÁÁÁ
Á
Supply ripple rejection ratio
f = 1 kHz,
See Figure 4
CB = 1 µF,
SE mode,
73
dB
V
n
Noise output voltage
Gain = 1,
CB = 0.1 µF,
See Figure 43
17
µV(rms)
†
The DGN package, properly mounted, can conduct 700 mW RMS power continuously. The D package, can only conduct 350 mW RMS power
continuously , with peaks to 700 mW.
NOTE 2: Output power is measured at the output terminals of the device at f = 1 kHz.
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
Audio
Input
Bias
Control
V
DD
6
5
7
VO+
V
DD
3
1
24BYPASS
IN
SE/BTL
VDD/2
C
I
R
I
C
S
C
B
R
F
SHUTDOWN
VO–8
RL = 8
Ω
GND
–
+
–
+
Figure 1. BTL Mode Test Circuit
Audio
Input
Bias
Control
V
DD
6
5
7
VO+
V
DD
3
1
24BYPASS
IN
SE/BTL
VDD/2
C
I
R
I
C
S
C
B
R
F
SHUTDOWN
VO–8
RL = 32
Ω
GND
C
O
V
DD
–
+
–
+
Figure 2. SE Mode Test Circuit
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
Supply ripple rejection ratio vs Frequency 3, 4, 5
I
DD
Supply current vs Supply voltage 6, 7
p
p
vs Supply voltage 8, 9
POOutput power
vs Load resistance 10, 11
p
vs Frequency
12, 13, 16, 17, 20, 21,
24, 25, 28, 29, 32, 33
THD+N
Total harmonic distortion plus noise
vs Output power
14, 15, 18, 19, 22, 23,
26, 27, 30, 31, 34, 35
Open loop gain and phase vs Frequency 36, 37
Closed loop gain and phase vs Frequency 38, 39, 40, 41
V
n
Output noise voltage vs Frequency 42, 43
P
D
Power dissipation vs Output power 44, 45, 46, 47
Figure 3
–50
–60
–80
–100
20 100 1k
–30
–20
f – Frequency – Hz
SUPPLY RIPPLE REJECTION RATIO
vs
FREQUENCY
0
10k 20k
–10
–40
–70
–90
BYPASS = 1/2 V
DD
CB = 0.1 µF
VDD = 3.3 V
RL = 8 Ω
SE
CB = 1 µF
Supply Ripple Rejection Ratio – dB
Figure 4
–50
–60
–80
–100
20 100 1k
–30
–20
f – Frequency – Hz
SUPPLY RIPPLE REJECTION RATIO
vs
FREQUENCY
0
10k 20k
–10
–40
–70
–90
BYPASS = 1/2 V
DD
CB = 0.1 µF
VDD = 5 V
RL = 8 Ω
SE
CB = 1 µF
Supply Ripple Rejection Ratio – dB
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 5
–50
–60
–80
–100
20 100 1k
–30
–20
f – Frequency – Hz
SUPPLY RIPPLE REJECTION RATIO
vs
FREQUENCY
0
10k 20k
–10
–40
–70
–90
VDD = 5 V
VDD = 3.3 V
RL = 8 Ω
CB = 1 µF
BTL
Supply Ripple Rejection Ratio – dB
Figure 6
VDD – Supply Voltage – V
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
1.8
1.4
0.4
0
1.6
1.2
0.2
3 3.5 5.5
4.5
I
DD
– Supply Current – mA
42.5 5
0.8
0.6
1
SE
BTL
2.5
VDD – Supply Voltage – V
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
20
10
0
343.5 4.5
60
5
30
SHUTDOWN = High
40
50
5.5
I
DD
– Supply Current – Aµ
70
80
90
Figure 7
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 8
VDD – Supply Voltage – V
OUTPUT POWER
vs
SUPPLY VOLTAGE
600
400
200
0
2.5 3.53 4 5.5
1000
P
4.5 5
O
– Output Power – mW
800
THD+N 1%
f = 1 kHz
BTL
RL = 32 Ω
RL = 8 Ω
Figure 9
VDD – Supply Voltage – V
OUTPUT POWER
vs
SUPPLY VOLTAGE
150
100
50
0
343.5 4.5
350
P
5
O
– Output Power – mW
200
THD+N = 1%
f = 1 kHz
SE
RL = 32 Ω
RL = 8 Ω
250
300
5.52.5
Figure 10
RL – Load Resistance – Ω
OUTPUT POWER
vs
LOAD RESISTANCE
300
200
100
0
16 3224 40 64
800
8
P
48 56
O
– Output Power – mW
400
THD+N = 1%
f = 1 kHz
BTL
VDD = 5 V
500
600
VDD = 3.3 V
700
Figure 11
RL – Load Resistance – Ω
OUTPUT POWER
vs
LOAD RESISTANCE
14 2620 32 5083844
THD+N = 1%
f = 1 kHz
SE
VDD = 5 V
VDD = 3.3 V
56 62
150
100
50
0
350
P
O
– Output Power – mW
200
250
300
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 12
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
AV = –2 V/V
VDD = 3.3 V
PO = 250 mW
RL = 8 Ω
BTL
20 1k 10k
1
0.01
10
0.1
20k100
AV =– 20 V/V
AV = –10 V/V
Figure 13
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
PO = 125 mW
VDD = 3.3 V
RL = 8 Ω
AV = –2 V/V
BTL
20 1k 10k
1
0.01
10
0.1
20k100
PO = 50 mW
PO = 250 mW
Figure 14
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
0 0.15 0.4
1
0.01
10
0.1
0.2 0.25 0.3 0.35
VDD = 3.3 V
f = 1 kHz
AV = –2 V/V
BTL
0.05 0.1
RL = 8 Ω
Figure 15
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 kHz
VDD = 3.3 V
RL = 8 Ω
CB = 1 µF
AV = –2 V/V
BTL
0.01 0.1 1
1
0.01
10
0.1
f = 1 kHz
f = 10 kHz
f = 20 Hz
TPA711
700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER
SLOS230B – NOVEMBER 1998 – REVISED MARCH 2000
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 16
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
AV = –2 V/V
VDD = 5 V
PO = 700 mW
RL = 8 Ω
BTL
20 1k 10k
1
0.01
10
0.1
20k100
AV = –20 V/V
AV = –10 V/V
Figure 17
f – Frequency – Hz
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
PO = 700 mW
VDD = 5 V
RL = 8 Ω
AV = –2 V/V
BTL
20 1k 10k
1
0.01
10
0.1
20k100
PO = 50 mW
PO = 350 mW
Figure 18
PO – Output Power – W
0.1 0.2 10.4 0.5 0.7 0.8
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
RL = 8 Ω
VDD = 5 V
f = 1 kHz
AV = –2 V/V
BTL
1
0.01
10
0.1
0.3 0.6 0.9
Figure 19
PO – Output Power – W
THD+N –Total Harmonic Distortion + Noise – %
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
f = 20 Hz
VDD = 5 V
RL = 8 Ω
CB = 1 µF
AV = –2 V/V
BTL
0.01 0.1 1
1
0.01
10
0.1
f = 1 kHz
f = 10 kHz
f = 20 kHz
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