TEXAS INSTRUMENTS TPA6203A1 Technical data

GQV, ZQV

DRB

DGN

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APPLICATION CIRCUIT

Actual Solution Siz e

6,9 mm

5,25 mm

(1)

O+

O-

GND

To Battery

Bias

Circuitry

IN-

IN+

In From

DAC

SHUTDOWN

Applies to the GQV/ZQV Packages Only

( )

BYPASS

(Optional)

1.25-W MONO FULLY DIFFERENTIAL AUDIO POWER AMPLIFIER

FEATURES APPLICATIONS

• 1.25 W Into 8 Ω From a 5-V Supply at

THD = 1% (Typical)

• Low Supply Current: 1.7 mA Typical

• Shutdown Control < 10 µ A

• Only Five External Components

– Improved PSRR (90 dB) and Wide Supply

Voltage (2.5 V to 5.5 V) for Direct Battery Operation

– Fully Differential Design Reduces RF

Rectification

– Improved CMRR Eliminates Two Input

Coupling Capacitors

– C

(BYPASS)

Design and High PSRR

• Avaliable in a 2 mm x 2 mm MicroStar

Junior ™ BGA Package (GQV, ZQV)

• Available in 3 mm x 3 mm QFN Package

(DRB)

• Available in an 8-Pin PowerPAD™ MSOP

(DGN)

Is Optional Due to Fully Differential

TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

• Designed for Wireless or Cellular Handsets

and PDAs

DESCRIPTION

The TPA6203A1 is a 1.25-W mono fully differential amplifier designed to drive a speaker with at least 8- Ω impedance while consuming less than 37 mm (ZQV package option) total printed-circuit board (PCB) area in most applications. This device operates from 2.5 V to 5.5 V, drawing only 1.7 mA of quiescent supply current. The TPA6203A1 is available in the space-saving 2 mm x 2 mm MicroStar Junior™ BGA package, and the space saving 3 mm x 3 mm QFN (DRB) package.

Features like 85-dB PSRR from 90 Hz to 5 kHz, improved RF-rectification immunity, and small PCB area makes the TPA6203A1 ideal for wireless handsets. A fast start-up time of 4 µ s with minimal pop makes the TPA6203A1 ideal for PDA applications.

Junior, PowerPAD, MicroStar Junior are trademarks of Texas Instruments.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

PACKAGED DEVICES

MicroStar Junior™ MicroStar Junior™ QFN MSOP

(GQV) (ZQV) (DRB) (DGN)

Device TPA6203A1GQVR TPA6203A1ZQVR TPA6203A1DRB TPA6203A1DGN

Symbolization AADI AAEI AAJI AAII

(1) The GQV is the standard MicroStar Junior package. The ZQV is a lead-free option and is qualified for 260 ° lead-free assembly. (2) The GQV and ZQV packages are only available taped and reeled. The suffix R designates taped and reeled parts. (3) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

website at www.ti.com .

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted

Supply voltage, V Input voltage, V Continuous total power dissipation See Dissipation Rating Table Operating free-air temperature, T Junction temperature, T Storage temperature, T

Lead temperature 1,6 mm (1/16 Inch) from case for 10 seconds

(1) Stresses beyond those listed under "absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

stg

INx and SHUTDOWN pins -0.3 V to V

(1)

ZQV, DRB, DGN 260 ° C GQV 235 ° C

(1) (2) (3)

UNIT

-0.3 V to 6 V

-40 ° C to 85 ° C

-40 ° C to 125 ° C

-65 ° C to 85 ° C

+ 0.3 V

RECOMMENDED OPERATING CONDITIONS

Supply voltage, V High-level input voltage, V Low-level input voltage, V Common-mode input voltage, V Operating free-air temperature, T Load impedance, Z

DISSIPATION RATINGS

PACKAGE DERATING FACTOR

GQV, ZQV 885 mW 8.8 mW/ ° C 486 mW 354 mW

DRB 2.7 W 21.8 mW/ ° C 1.7 W 1.4 W

MIN TYP MAX UNIT

2.5 5.5 V SHUTDOWN 2 V SHUTDOWN 0.8 V V

= 2.5 V, 5.5 V, CMRR ≤ -60 dB 0.5 VDD-0.8 V

-40 85 ° C

6.4 8 Ω

TA≤ 25 ° C TA= 70 ° C TA= 85 ° C

POWER RATING POWER RATING POWER RATING

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TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

ELECTRICAL CHARACTERISTICS

TA= 25 ° C, Gain = 1 V/V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

|V PSRR Power supply rejection ratio V

CMRR Common-mode rejection ratio dB

|IIH| High-level input current V |IIL| Low-level input current V I

DD(SD)

Output offset voltage (measured

| VI= 0 V, V

differentially)

= 2.5 V to 5.5 V -90 -70 dB

= 3.6 V to 5.5 V, VIC= 0.5 V to VDD-0.8 -70 -65

= 2.5 V, VIC= 0.5 V to 1.7 V -62 -55

Low-level output voltage V

High-level output voltage V

Supply current V

RL= 8 Ω , V V

= 0 V or V

IN-

RL= 8 Ω , V V

= 0 V or V

IN-

= 5.5 V, VI= 5.8 V 1.2 µ A

= 5.5 V, VI= -0.3 V 1.2 µ A

= 2.5 V to 5.5 V, No load, SHUTDOWN = 2 V 1.7 2 mA

= 2.5 V to 5.5 V 9 mV

= VDD,

IN+

= 0 V, V

IN+

= VDD,

IN+

= 0 V, V

IN+

Supply current in shutdown mode SHUTDOWN = 0.8 V, V

= 5.5 V 0.30 0.46

= 3.6 V 0.22 V

= V

IN-

= V

IN-

= 2.5 V to 5.5 V, No load 0.01 0.9 µ A

= 2.5 V 0.19 0.26

= 5.5 V 4.8 5.12

= 3.6 V 3.28 V

= 2.5 V 2.1 2.24

OPERATING CHARACTERISTICS

TA= 25 ° C, Gain = 1 V/V, RL= 8 Ω

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

= 5 V 1.25

THD+N V

SVR

SNR Signal-to-noise ratio V

CMRR resistor tolerance = 0.1%, dB

Output power THD + N = 1%, f = 1 kHz V

= 5 V, PO= 1 W, f = 1 kHz 0.06% Total harmonic distortion plus noise

Supply ripple rejection ratio V

Output voltage noise f = 20 Hz to 20 kHz µ V

Common-mode rejection ratio

= 3.6 V, PO= 0.5 W, f = 1 kHz 0.07%

= 2.5 V, PO= 200 mW, f = 1 kHz 0.08%

(BYPASS)

Inputs ac-grounded with CI= 2 µ F C

(BYPASS) DD

Inputs ac-grounded with CI= 2 µ F C

(BYPASS)

Inputs ac-grounded with CI= 2 µ F

gain = 4V/V, V

= 0.47 ° F,

= 3.6 V to 5.5 V, -87

= 0.47 µ F,

= 2.5 V to 3.6 V, -82 dB

= 0.47 µ F,

= 2.5 V to 5.5 V, ≤ -74

= 5 V, PO= 1 W 104 dB

= 2.5 V to 5.5 V, f = 20 Hz to 1 kHz ≤ -85

= 200 mV

ICM

= 3.6 V 0.63 W

= 2.5 V 0.3

f = 217 Hz to 2 kHz, V

= 200 mV

RIPPLE

f = 217 Hz to 2 kHz, V

= 200 mV

RIPPLE

f = 40 Hz to 20 kHz, V

= 200 mV

RIPPLE

No weighting 17 A weighting 13

f = 20 Hz to 20 kHz ≤ -74

Input impedance 2 M Ω Output impedance Shutdown mode >10k Shutdown attenuation f = 20 Hz to 20 kHz, RF= RI= 20 k Ω -80 dB

RMS

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(SIDE VIEW)

SHUTDOWN

IN+

O+

GND

O-

IN-

1 2 3

BYPASS

SHUTDOWN

BYPASS

IN+

IN-

O-

GND

O+

SHUTDOWN

BYPASS

IN+

IN-

O-

GND

O+

TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

MicroStar Junior™ (GQV or ZQV) PACKAGE

(TOP VIEW)

8-PIN QFN (DRB) PACKAGE

(TOP VIEW)

8-PIN MSOP (DGN) PACKAGE

(TOP VIEW)

Terminal Functions

TERMINAL

NAME GQV

DRB,

DGN

BYPASS C1 2 I Mid-supply voltage. Adding a bypass capacitor improves PSRR. GND B2 7 I High-current ground IN- C3 4 I Negative differential input IN+ C2 3 I Positive differential input SHUTDOWN B1 1 I Shutdown terminal (active low logic) V

O+

O-

A3 6 I Supply voltage terminal B3 5 O Positive BTL output A1 8 O Negative BTL output

Thermal Pad

I/O DESCRIPTION

Connect to ground. Thermal pad must be soldered down in all applications to properly secure device on the PCB.

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Table of Graphs

CMRR Common-mode rejection ratio

Output power

Power dissipation vs Output power 4, 5

Maximum ambient temperature vs Power dissipation 6

Total harmonic distortion + noise vs Frequency 9, 10, 11, 12

Supply voltage rejection ratio vs Frequency 14, 15, 16, 17 Supply voltage rejection ratio vs Common-mode input voltage 18 GSM Power supply rejection vs Time 19 GSM Power supply rejection vs Frequency 20

Closed loop gain/phase vs Frequency 23 Open loop gain/phase vs Frequency 24

Supply current

Start-up time vs Bypass capacitor 27

TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

TYPICAL CHARACTERISTICS

FIGURE

vs Supply voltage 1 vs Load resistance 2, 3

vs Output power 7, 8

vs Common-mode input voltage 13

vs Frequency 21 vs Common-mode input voltage 22

vs Supply voltage 25 vs Shutdown voltage 26

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0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

8 13 18 23 28

VDD = 5 V

VDD = 3.6 V

VDD = 2.5 V

- Load Resistance - Ω

- Output Power - WP O

f = 1 kHz THD+N = 10% Gain = 1 V/V

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.5 3 3.5 4 4.5 5

- Supply Voltage - V

- Output Power - WP O

RL = 8 Ω f = 1 kHz Gain = 1 V/V

THD+N = 1%

THD+N = 10%

0.2

0.4

0.6

0.8

1.2

1.4

8 13 18 23 28

VDD = 5 V

VDD = 3.6 V

VDD = 2.5 V

- Load Resistance - Ω

- Output Power - WP O

f = 1 kHz THD+N = 1% Gain = 1 V/V

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

PD- Power Dissipation - W

Maximum Ambient Temperature - C

ZQV Package Only

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0 0.2 0.4 0.6 0.8

8 Ω

16 Ω

- Output Power - W

- Power Dissipation - WP D

VDD = 3.6 V

0 0.2 0.4 0.6 0.8 1 1.2 1.4

8 Ω

16 Ω

- Output Power - W

- Power Dissipation - WP D

VDD = 5 V

0.1

0.2

0.3

0.4

0.5

0.6

0.7

VDD = 5 V CI = 2 µF RL = 8 Ω C

(Bypass)

= 0 to 1 µF

Gain = 1 V/V

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

20 20 k100 200 1 k 2 k 10 k

f - Frequency - Hz

THD+N - Total Harmonic Distortion + Noise - %

50 mW

250 mW

1 W

0.01

0.02

0.05

0.1

0.2

0.5

10 m 3100 m 1 2

PO - Output Power - W

THD+N - Total Harmonic Distortion + Noise - %

2.5 V

3.6 V

5 V

RL = 8 Ω, f = 1 kHz C

(Bypass)

= 0 to 1 µF

Gain = 1 V/V

0.01

0.02

0.05

0.1

0.2

0.5

10 m 100 m 1 2

PO - Output Power - W

THD+N - Total Harmonic Distortion + Noise - %

2.5 V

5 V

3.6 V

RL = 16 Ω f = 1 kHz C

(Bypass)

= 0 to 1 µF

Gain = 1 V/V

TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

OUTPUT POWER OUTPUT POWER OUTPUT POWER

vs vs vs

SUPPLY VOLTAGE LOAD RESISTANCE LOAD RESISTANCE

Figure 1. Figure 2. Figure 3.

TYPICAL CHARACTERISTICS

POWER DISSIPATION POWER DISSIPATION MAXIMUM AMBIENT

vs vs TEMPERATURE

OUTPUT POWER OUTPUT POWER vs

POWER DISSIPATION

Figure 4. Figure 5. Figure 6.

TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION +

NOISE NOISE NOISE

vs vs vs

OUTPUT POWER OUTPUT POWER FREQUENCY

Figure 7. Figure 8. Figure 9.

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0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

f - Frequency - Hz

THD+N - Total Harmonic Distortion + Noise - %

25 mW

125 mW

500 mW

VDD = 3.6 V CI = 2 µF RL = 8 Ω C

(Bypass)

= 0 to 1 µF

Gain = 1 V/V

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

f - Frequency - Hz

THD+N - Total Harmonic Distortion + Noise - %

15 mW

200 mW

75 mW

VDD = 2.5 V CI = 2 µF RL = 8 Ω C

(Bypass)

= 0 to 1 µF

Gain = 1 V/V

VDD = 3.6 V CI = 2 µF RL = 16 Ω C

(Bypass)

= 0 to 1 µF

Gain = 1 V/V

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

f - Frequency - Hz

THD+N - Total Harmonic Distortion + Noise - %

25 mW

250 mW

125 mW

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

VDD = 3.6 V

VDD = 5 V

VDD =2. 5 V

f - Frequency - Hz

- Supply Voltage Rejection Ratio - dBk SVR

CI = 2 µF RL = 8 Ω C

(Bypass)

= 0.47 µF

p-p

= 200 mV Inputs ac-Grounded Gain = 1 V/V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

f - Frequency - Hz

- Supply Voltage Rejection Ratio - dBk SVR

VDD = 3.6 V

VDD = 5 V

VDD =2. 5 V

Gain = 5 V/V CI = 2 µF RL = 8 Ω C

(Bypass)

= 0.47 µF

p-p

= 200 mV

Inputs ac-Grounded

0.01

0.10

0 0.5 1 1.5 2 2.5 3 3.5

VDD = 2.5 V

VDD = 3.6 V

f = 1 kHz PO = 200 mW

- Common Mode Input Voltage - V

THD+N - Total Harmonic Distortion + Noise - %

-90

-80

-70

-60

-50

-40

-30

-20

-10

0 1 2 3 4 5

- Common Mode Input Voltage - V

f = 217 Hz C

(Bypass)

= 0.47 µF

RL = 8 Ω Gain = 1 V/V

VDD = 2.5 V

VDD = 3.6 V

VDD = 5 V

- Supply Voltage Rejection Ratio - dBk SVR

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

f - Frequency - Hz

- Supply Voltage Rejection Ratio - dBk SVR

VDD =2. 5 V

VDD = 5 V

VDD = 3.6 V

CI = 2 µF RL = 8 Ω Inputs Floating Gain = 1 V/V

VDD = 3.6 V CI = 2 µF RL = 8 Ω Inputs ac-Grounded Gain = 1 V/V

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

f - Frequency - Hz

- Supply Voltage Rejection Ratio - dBk SVR

(Bypass)

= 0.1 µF

(Bypass)

= 0

(Bypass)

= 0.47 µF

(Bypass)

= 1 µF

TYPICAL CHARACTERISTICS (continued)

TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION +

NOISE NOISE NOISE

vs vs vs

FREQUENCY FREQUENCY FREQUENCY

Figure 10. Figure 11. Figure 12.

TOTAL HARMONIC DISTORTION + SUPPLY VOLTAGE REJECTION SUPPLY VOLTAGE REJECTION

NOISE RATIO RATIO

vs vs vs

COMMON MODE INPUT VOLTAGE FREQUENCY FREQUENCY

SUPPLY VOLTAGE REJECTION SUPPLY VOLTAGE REJECTION SUPPLY VOLTAGE REJECTION

Figure 13. Figure 14. Figure 15.

RATIO RATIO RATIO

vs vs vs

FREQUENCY FREQUENCY COMMON MODE INPUT VOLTAGE

Figure 16. Figure 17. Figure 18.

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f - Frequency - Hz

-50

-100

0 200 400 600 800 1k 1.2k

- Output Voltage - dBV

1.4k1.6k 1.8k 2k

-150

-100

-50

- Supply Voltage - dBVV DD

VDD Shown in Figure 19 CI = 2 µF, C

(Bypass)

= 0.47 µF, Inputs ac-Grounded Gain = 1V/V

C1 Frequency

217.41 Hz C1 - Duty

20 % C1 High

3.598 V

C1 Pk-Pk 504 mV

Voltage - V

Ch1 100 mV/div Ch4 10 mV/div

2 ms/div

t - Time - ms

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

20 20 k50 100 200 500 1 k 2 k 5 k 10 k

f - Frequency - Hz

CMRR - Common Mode Rejection Ratio - dB

VDD = 2.5 V to 5 V VIC = 200 mV

p-p

RL = 8 Ω Gain = 1 V/V

-70

-60

-50

-40

-30

-20

-10

10 100 10 k 100 k 1 M 10 M

-220

-180

-140

-100

-60

-20

100

140

180

220

1 k

f - Frequency - Hz

Gain - dB

Phase - Degrees

Gain

Phase

VDD = 3.6 V RL = 8 Ω Gain = 1 V/V

-200

-150

-100

-50

100

150

200

100 1 k 10 k 100 k 1 M

-200

-150

-100

-50

100

150

200

f - Frequency - Hz

Gain - dB

Phase - Degrees

Gain

Phase

VDD = 3.6 V RL = 8 Ω

10 M

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

RL = 8 Ω Gain = 1 V/V

- Common Mode Input Voltage - V

CMRR - Common Mode Rejection Ratio - dB

VDD = 3.6 V

VDD = 5 V

VDD = 2.5 V

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

- Supply Voltage - V

- Supply Current - mA I

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9

VDD = 2.5 V

VDD = 3.6 V

VDD = 5 V

Voltage on SHUTDOWN Terminal - V

- Supply Current - mA I

0.2

0 0.5 1 1.5 2

(Bypass)

- Bypass Capacitor - µF

Start-Up Time - ms

(1)

Start-Up time is the time it takes (from a low-to-high transition on SHUTDOWN) for the gain of the amplifier to reach -3 dB of the final gain.

TPA6203A1

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

GSM POWER SUPPLY GSM POWER SUPPLY COMMON MODE REJECTION RATIO

REJECTION REJECTION vs

vs vs FREQUENCY

TIME FREQUENCY

Figure 19. Figure 20. Figure 21.

TYPICAL CHARACTERISTICS (continued)

COMMON MODE REJECTION RATIO CLOSED LOOP GAIN/PHASE OPEN LOOP GAIN/PHASE

vs vs vs

COMMON MODE INPUT VOLTAGE FREQUENCY FREQUENCY

Figure 22. Figure 23. Figure 24.

SUPPLY CURRENT SUPPLY CURRENT

vs vs

SUPPLY VOLTAGE SHUTDOWN VOLTAGE

START-UP TIME

BYPASS CAPACITOR

(1)

Figure 25. Figure 26. Figure 27.

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APPLICATION INFORMATION

O+

O-

GND

To Battery

Bias

Circuitry

IN-

IN+

In From

DAC

SHUTDOWN

( )

BYPASS

(Optional)

FULLY DIFFERENTIAL AMPLIFIER

The TPA6203A1 is a fully differential amplifier with differential inputs and outputs. The fully differential amplifier consists of a differential amplifier and a common- mode amplifier. The differential amplifier ensures that the amplifier outputs a differential voltage that is equal to the differential input times the gain. The common-mode feedback ensures that the common-mode voltage at the output is biased around V

/2 regardless of the common- mode voltage at the

input.

Advantages of Fully Differential Amplifiers

• Input coupling capacitors not required: A fully differential amplifier with good CMRR, like the TPA6203A1, allows the inputs to be biased at voltage other than mid-supply. For example, if a DAC has mid-supply lower than the mid-supply of the TPA6203A1, the common-mode feedback circuit adjusts for that, and the TPA6203A1 outputs are still biased at mid-supply of the TPA6203A1. The inputs of the TPA6203A1 can be biased from 0.5 V to V are biased outside of that range, input coupling capacitors are required.

- 0.8 V. If the inputs

SLOS364E – MARCH 2002 – REVISED DECEMBER 2005

• Mid-supply bypass capacitor, C

(BYPASS)

required: The fully differential amplifier does not require a bypass capacitor. This is because any shift in the mid-supply affects both positive and negative channels equally and cancels at the differential output. However, removing the bypass capacitor slightly worsens power supply rejection ratio (k

), but a slight decrease of k

SVR

acceptable when an additional component can be eliminated (see Figure 17 ).

• Better RF-immunity: GSM handsets save power by turning on and shutting off the RF transmitter at a rate of 217 Hz. The transmitted signal is picked-up on input and output traces. The fully differential amplifier cancels the signal much better than the typical audio amplifier.

APPLICATION SCHEMATICS

Figure 28 through Figure 30 show application schematics for differential and single-ended inputs. Typical values are shown in Table 1 .

Table 1. Typical Component Values

COMPONENT VALUE

C C C (1) C

(1)

(BYPASS) S I

(BYPASS)

is optional

10 k Ω 10 k Ω

0.22 µ F 1 µ F

0.22 µ F

TPA6203A1

, not

may be

SVR

Figure 28. Typical Differential Input Application Schematic

+ 20 hidden pages

TEXAS INSTRUMENTS TPA6203A1 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES APPLICATIONS

DESCRIPTION

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING CONDITIONS

DISSIPATION RATINGS

ELECTRICAL CHARACTERISTICS

OPERATING CHARACTERISTICS

Table of Graphs

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

APPLICATION INFORMATION

Advantages of Fully Differential Amplifiers

APPLICATION SCHEMATICS