TEXAS INSTRUMENTS TPA6111A2 Technical data
www.ti.com
1
2
3
4
8
7
6
5
V
O1
IN1−
BYPASS
GND
V
DD
V
O2
IN2−
SHUTDOWN
D OR DGN PACKAGE
(TOP VIEW)
Audio
Input
Bias
Control
8
1
7
4
V
O1
V
O2
V
DD
5
2
3
6
IN1−
BYPASS
SHUTDOWN
VDD/2
C
I
R
I
R
F
C
(BYP)
C
(S)
Audio
Input
C
I
R
I
IN2−
R
F
V
DD
From Shutdown
Control Circuit
−
+
−
+
C
(C)
C
(C)
150-mW STEREO AUDIO POWER AMPLIFIER
FEATURES DESCRIPTION
• 150-mW Stereo Output
• PC Power Supply Compatible
– Fully Specified for 3.3-V and
5-V Operation
– Operation to 2.5 V
• Pop Reduction Circuitry
• Internal Midrail Generation
• Thermal and Short-Circuit Protection
• Surface-Mount Packaging
– PowerPAD™ MSOP
– SOIC
• Pin Compatible With TPA122, LM4880, and
LM4881 (SOIC)
TPA6111A2
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
The TPA6111A2 is a stereo audio power amplifier
packaged in either an 8-pin SOIC or an 8-pin
PowerPAD™ MSOP package capable of delivering
150 mW of continuous RMS power per channel into
16-Ω loads. Amplifier gain is externally configured by
means of two resistors per input channel and does
not require external compensation for settings of 0 to
20 dB.
THD+N, when driving a 16-Ω load from 5 V, is 0.03%
at 1 kHz, and less than 1% across the audio band of
20 Hz to 20 kHz. For 32-Ω loads, the THD+N is
reduced to less than 0.02% at 1 kHz, and is less than
1% across the audio band of 20 Hz to 20 kHz. For
10-kΩ loads, the THD+N performance is 0.005% at 1
kHz, and less than 0.5% across the audio band of 20
Hz to 20 kHz.
TYPICAL APPLICATION CIRCUIT
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 2000–2004, Texas Instruments Incorporated
www.ti.com
TPA6111A2
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
SMALL OUTLINE
(1)
(1)
MSOP
(D) (DGN)
–40°C to 85°C TPA6111A2D TPA6111A2DGN TI AJA
(1) The D and DGN package is available in left-ended tape and reel only (e.g., TPA6111A2DR,
TPA6111A2DGNR).
Terminal Functions
TERMINAL
NAME NO.
BYPASS 3 I Tap to voltage divider for internal mid-supply bias supply. Connect to a 0.1-µF to 1-µF low ESR capacitor
GND 4 I GND is the ground connection.
IN1– 2 I IN1– is the inverting input for channel 1.
IN2– 6 I IN2– is the inverting input for channel 2.
SHUTDOWN 5 I Puts the device in a low quiescent current mode when held high
V
DD
V
O1
V
O2
I/O DESCRIPTION
for best performance.
8 I V
1 O V
7 O V
is the supply voltage terminal.
DD
is the audio output for channel 1.
O1
is the audio output for channel 2.
O2
MSOP
SYMBOLIZATION
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
V
V
T
T
(1) Stresses beyond those listed under "absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
Supply voltage 6 V
DD
Input voltage –0.3 V to V
I
Continuous total power dissipation internally limited
Operating junction temperature range –40°C to 150°C
J
Storage temperature range –65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
UNIT
DD
DISSIPATION RATING TABLE
PACKAGE
D 725 mW 5.8 mW/°C 464 mW 377 mW
DGN 2.14 W
(1) See the Texas Instruments document, PowerPAD Thermally Enhanced Package Application Report
(literature number SLMA002), for more information on the PowerPAD package. The thermal data was
measured on a PCB layout based on the information in the section entitled Texas Instruments
Recommended Board for PowerPAD on page 33 of the before-mentioned document.
TA≤ 25°C DERATING FACTOR TA= 70°C TA= 85°C
POWER RATING ABOVE TA= 25°C POWER RATING POWER RATING
(1)
17.1 mW/°C 1.37 W 1.11 W
+ 0.3 V
2
www.ti.com
TPA6111A2
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
RECOMMENDED OPERATING CONDITIONS
MIN MAX UNIT
V
T
V
V
DC ELECTRICAL CHARACTERISTICS
at V
V
PSRR Power supply rejection ratio V
I
I
Z
AC OPERATING CHARACTERISTICS
V
P
THD+N Total harmonic distortion + noise PO= 40 mW, 20 Hz – 20 kHz 0.4%
B
SNR Signal-to-noise ratio PO= 50 mW, AV= 1 100 dB
V
Supply voltage 2.5 5.5 V
DD
Operating free-air temperature –40 85 °C
A
High-level input voltage (SHUTDOWN) 60% x V
IH
Low-level input voltage (SHUTDOWN) 25% x V
IL
= 3.3 V, TA= 25°C (unless otherwise noted)
DD
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output offset voltage 10 mV
OO
= 3.2 V to 3.4 V 70 dB
DD
DD
DD(SD)
i
DD
Supply current SHUTDOWN (pin 5) = 0 V 1.5 3 mA
Supply current in shutdown mode SHUTDOWN (pin 5) = V
DD
Input impedance > 1 MΩ
= 3.3 V, TA= 25°C, RL= 16 Ω
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
O
OM
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 60 mW
Maximum output power BW G = 20 dB, THD < 5% > 20 kHz
Phase margin Open loop 96°
Supply ripple rejection f = 1 kHz, C
= 0.47 µF 71 dB
(BYP)
Channel/channel output separation f = 1 kHz, PO= 40 mW 89 dB
n
Noise output voltage AV= 1 11 µV(rms)
1 10 µA
V
V
DD
DC ELECTRICAL CHARACTERISTICS
at V
= 5.5 V, TA= 25°C
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
PSRR Power supply rejection ratio V
I
DD
I
DD(SD)
|IIH| High-level input current (SHUTDOWN) V
|IIL| Low-level input current (SHUTDOWN) V
Z
i
Output offset voltage 10 mV
OO
Supply current SHUTDOWN (pin 5) = 0 V 1.6 3.2 mA
Supply current in shutdown mode SHUTDOWN (pin 5) = V
Input impedance > 1 MΩ
= 4.9 V to 5.1 V 70 dB
DD
DD
= 5.5 V, VI= V
DD
= 5.5 V, VI= 0 V 1 µA
DD
DD
1 10 µA
1 µA
3
www.ti.com
TPA6111A2
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
AC OPERATING CHARACTERISTICS
V
= 5 V, TA= 25°C, RL= 6 Ω
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
P
O
THD+N Total harmonic distortion + noise PO= 100 mW, 20 Hz – 20 kHz 0.6%
B
OM
SNR Signal-to-noise ratio PO= 100 mW, AV= 1 100 dB
V
n
AC OPERATING CHARACTERISTICS
V
DD
P
O
THD+N Total harmonic distortion + noise PO= 40 mW, 20 Hz – 20 kHz 0.4%
B
OM
SNR Signal-to-noise ratio PO= 90 mW, AV= 1 100 dB
V
n
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 150 mW
Maximum output power BW G = 20 dB, THD < 5% > 20 kHz
Phase margin Open loop 96°
Supply ripple rejection ratio f = 1 kHz, C
= 0.47 µF 61 dB
(BYP)
Channel/channel output separation f = 1 kHz, PO= 100 mW 90 dB
Noise output voltage AV= 1 11.7 µV(rms)
= 3.3 V, TA= 25°C, RL= 32 Ω
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 35 mW
Maximum output power BW G = 20 dB, THD < 2% > 20 kHz
Phase margin Open loop 96°
Supply ripple rejection f = 1 kHz, C
Channel/channel output separation f = 1 kHz, PO= 25 mW 75 dB
Noise output voltage AV= 1 11 µV(rms)
= 0.47 µF 71 dB
(BYP)
AC OPERATING CHARACTERISTICS
V
= 5 V, TA= 25°C, RL= 32 Ω
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
P
O
THD+N Total harmonic distortion + noise PO= 20 mW, 20 Hz – 20 kHz 2%
B
OM
SNR Signal-to-noise ratio PO= 90 mW, AV= 1 104 dB
V
n
Output power (each channel) THD ≤ 0.1%, f = 1 kHz 90 mW
Maximum output power BW G = 20 dB, THD < 2% > 20 kHz
Phase margin Open loop 97°
Supply ripple rejection f = 1 kHz, C
= 0.47 µF 61 dB
(BYP)
Channel/channel output separation f = 1 kHz, PO= 65 mW 98 dB
Noise output voltage AV= 1 11.7 µV(rms)
4
www.ti.com
0.001
10
0.01
0.1
1
20 20k100 1k 10k
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 3.3 V ,
PO = 25 mW,
CB = 1 µF,
RL = 32 Ω,
AV = −1 V/V
10 100
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.3 V ,
RL = 32 Ω,
AV = −1 V/V ,
CB = 1 µF
50
PO − Output Power − mW
20 Hz
1 kHz
20 kHz
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
TYPICAL CHARACTERISTICS
Table of Graphs
THD+N Total harmonic distortion plus noise
Supply ripple rejection ratio vs Frequency 15, 16
V
I
DD
SNR Signal-to-noise ratio vs Voltage gain 32
Output noise voltage vs Frequency 17, 18
n
Crosstalk vs Frequency 19–24
Shutdown attenuation vs Frequency 25, 26
Open-loop gain and phase margin vs Frequency 27, 28
Output power vs Load resistance 29, 30
Supply current vs Supply voltage 31
Power dissipation/amplifier vs Load power 33, 34
vs Frequency 1, 3, 5, 6, 7, 9, 11, 13,
vs Output power 2, 4, 8, 10, 12, 14
TPA6111A2
FIGURE
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 1. Figure 2.
5
www.ti.com
20 20k100 1k 10k
0.001
10
0.01
0.05
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 5 V ,
PO = 60 mW,
CB = 1 µF,
RL = 32 Ω,
AV = −1 V/V
AV = −5 V/V
AV = −10 V/V
10 500
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
VDD = 5 V ,
RL = 32 Ω,
AV = −1 V/V ,
CB = 1 µF
100
PO − Output Power − mW
1 kHz
20 Hz
20 kHz
20 20k100 1k 10k
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 3.3 V ,
PO = 100 mW,
CB = 1 µF,
RL = 10 kΩ,
AV = −1 V/V
AV = −10 V/V
AV = −1 V/V
AV = −5 V/V
20 20k100 1k 10k
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 5 V ,
PO = 100 mW,
CB = 1 µF,
RL = 10 kΩ
TPA6111A2
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 3. Figure 4.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
6
Figure 5. Figure 6.
www.ti.com
20 20k100 1k 10k
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 3.3 V ,
PO = 60 mW,
CB = 1 µF,
RL = 8 Ω,
AV = −1 V/V
10 500
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.3 V ,
RL = 8 Ω,
AV = −1 V/V ,
CB = 1 µF
100
PO − Output Power − mW
1 kHz
20 Hz
20 kHz
20 20k100 1k 10k
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 5 V ,
PO = 150 mW,
CB = 1 µF,
RL = 8 kΩ
AV = −10 V/V
AV = −1 V/V
AV = −5 V/V
10 500
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
VDD = 5 V ,
RL = 8 Ω,
AV = −1 V/V ,
CB = 1 µF
PO − Output Power − mW
1 kHz
20 kHz
100
20 Hz
TPA6111A2
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 7. Figure 8.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 9. Figure 10.
7
www.ti.com
20 20k100 1k 10k
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 3.3 V ,
PO = 40 mW,
CB = 1 µF,
RL = 16 Ω,
AV = −1 V/V
10 500
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.3 V ,
RL =16 Ω,
AV = −1 V/V ,
CB = 1 µF
PO − Output Power − mW
1 kHz
20 kHz
100
20 Hz
20 20k100 1k 10k
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VDD = 5 V ,
PO = 100 mW,
CB = 1 µF,
RL = 16 Ω
AV = −10 V/V
AV = −1 V/V
AV = −5 V/V
10 500
0.001
10
0.01
0.1
1
THD+N − Total Harmonic Distortion + Noise − %
VDD = 5 V ,
RL = 16 Ω,
AV = −1 V/V ,
CB = 1 µF
PO − Output Power − mW
1 kHz
20 Hz
20 kHz
100
TPA6111A2
SLOS313B – DECEMBER 2000 – REVISED JUNE 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
Figure 11. Figure 12.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY OUTPUT POWER
8
Figure 13. Figure 14.
Loading...