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2
1
TPA4411RTJ
INR
INL
PGND
OUTL PVSSSVSS
C1N
PVDDSGND
A1
B1
C1
D1
A2
A3 A4
SDL
SVDD
C1P
SDR
NC
NC
OUTR
TPA4411YZH
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TPA4411MRTJ
TPA4411
TPA4411M
www.ti.com
80-mW DIRECTPATH™ STEREO HEADPHONE DRIVER
1
FEATURES
2
• Space Saving Packages
– 20-Pin, 4 mm × 4 mm Thin QFN
– TPA4411 – Thermally Optimized
PowerPAD™ Package
– TPA4411M – Thermally Enhanced
PowerPAD™ Package
– 16-Ball, 2.18 mm × 2.18 mm WCSP
• Ground-Referenced Outputs Eliminate
DC-Bias Voltages on Headphone Ground Pin
– No Output DC-Blocking Capacitors
– Reduced Board Area
– Reduced Component Cost
– Improved THD+N Performance
– No Degradation of Low-Frequency
Response Due to Output Capacitors
• Wide Power Supply Range: 1.8 V to 4.5 V
• 80-mW/Ch Output Power into 16- Ω at 4.5 V
• Independent Right and Left Channel
Shutdown Control
• Short-Circuit and Thermal Protection
• Pop Reduction Circuitry
APPLICATIONS
• Notebook Computers
• CD / MP3 Players
• Smart Phones
• Cellular Phones
• PDAs
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
DESCRIPTION
The TPA4411 and TPA4411M are stereo headphone
drivers designed to allow the removal of the output
DC-blocking capacitors for reduced component count
and cost. The TPA4411 and TPA4411M are ideal for
small portable electronics where size and cost are
critical design parameters.
The TPA4411 and TPA4411M are capable of driving
80 mW into a 16- Ω load at 4.5 V. Both TPA4411 and
TPA4411M have a fixed gain of – 1.5 V/V and
headphone outputs that have ± 8-kV IEC ESD
protection. The TPA4411 and TPA4411M have
independent shutdown control for the right and left
audio channels.
The TPA4411 is available in a 2.18 mm × 2.18 mm
WCSP and 4 mm × 4 mm Thin QFN packages. The
TPA4411M is available in a 4 mm × 4 mm Thin QFN
package. The TPA4411RTJ package is a thermally
optimized PowerPAD™ package allowing the
maximum amount of thermal dissipation and the
TPA4411MRTJ is a thermally enhanced PowerPAD
package designed to match competitive package
footprints.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 PowerPAD, DirectPath are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004 – 2008, Texas Instruments Incorporated
20
19
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17
16
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14
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12
11
10
9
8
7
6
5
4
3
2
1
NC
PVDD
SDL
SGND
NC
C1P
PGND
C1N
NC
PVSS
INR
SDR
INL
NC
OUTR
NC
SVSS
NC
OUTL
SVDD
NC − No internal connection
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17
16
15
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10
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8
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6
5
4
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2
1
NC
PVDD
SDL
SGND
NC
C1P
PGND
C1N
NC
PVSS
INR
SDR
INL
NC
OUTR
NC
SVSS
NC
OUTL
SVDD
NC − No internal connection
TPA4411MRTJTPA4411RTJ
INR
INL
PGND
OUTL PVSSSVSS
C1N
PVDDSGND
A1
B1
C1
D1
A2 A3 A4
SDL
SVDD
C1P
SDR
NC-Nointernalconnection
NC
NC
OUTR
TPA4411YZH
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
RTJ (QFN) PACKAGE
(TOP VIEW)
YZH (WCSP) PACKAGE
(TOP VIEW)
2 Copyright © 2004 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA4411 TPA4411M
TERMINAL FUNCTIONS
TERMINAL
NAME QFN WCSP
C1P 1 A4 I/O Charge pump flying capacitor positive terminal
PGND 2 B4 I Power ground, connect to ground.
C1N 3 C4 I/O Charge pump flying capacitor negative terminal
4, 6, 8,
NC 12, 16, B3, C3 No connection
20
PVSS 5 D4 O Output from charge pump.
SVSS 7 D3 I Amplifier negative supply, connect to PVSS via star connection.
OUTL 9 D2 O Left audio channel output signal
SVDD 10 D1 I Amplifier positive supply, connect to PVDD via star connection.
OUTR 11 C2 O Right audio channel output signal
INL 13 C1 I Left audio channel input signal
SDR 14 B1 I Right channel shutdown, active low logic.
INR 15 A1 I Right audio channel input signal
SGND 17 A2 I Signal ground, connect to ground.
SDL 18 B2 I Left channel shutdown, active low logic.
PVDD 19 A3 I Supply voltage, connect to positive supply.
Exposed Pad -
I/O DESCRIPTION
Exposed pad must be soldered to a floating plane. Do NOT connect to power or ground.
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
ABSOLUTE MAXIMUM RATINGS
(1)
over operating free-air temperature range, TA= 25 ° C (unless otherwise noted)
VALUE / UNIT
Supply voltage, AVDD, PVDD – 0.3 V to 5.5 V
V
T
T
T
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
Input voltage – 0.3 V to V
I
Output Continuous total power dissipation See Dissipation Rating Table
Operating free-air temperature range – 40 ° C to 85 ° C
A
Operating junction temperature range – 40 ° C to 150 ° C
J
Storage temperature range – 65 ° C to 150 ° C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 ° C
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DD
+ 0.3 V
Copyright © 2004 – 2008, Texas Instruments Incorporated 3
Product Folder Link(s): TPA4411 TPA4411M
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
DISSIPATION RATINGS TABLE
PACKAGE DERATING FACTOR
RTJ
(TPA4411)
RTJ
(TPA4411M)
TA≤ 25 ° C TA= 70 ° C TA= 85 ° C
POWER RATING POWER RATING POWER RATING
5200 mW 41.6 mW/ ° C 3120 mW 2700 mW
3450 mW 34.5 mW/ ° C 1898 mW 1380 mW
YZH 1200 mW 9.21 mW/ ° C 690 mW 600 mW
(1) Derating factor measured with High K board.
AVAILABLE OPTIONS
T
A
PACKAGED DEVICES
20-pin, 4 mm × 4 mm QFN TPA4411RTJ
– 40 ° C to 85 ° C 20-pin, 4 mm × 4 mm QFN TPA4411MRTJ
16-ball, 2.18 mm × 2.18 mm WSCP TPA4411YZH AKT
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .
(2) The RTJ package is only available taped and reeled. To order, add the suffix “ R ” to the end of the part number for a reel of 3000, or add
the suffix “ T ” to the end of the part number for a reel of 250 (e.g., TPA4411RTJR).
(1)
(1)
PART NUMBER SYMBOL
(2)
(2)
AKQ
BPB
RECOMMENDED OPERATING CONDITIONS
Supply voltage, AVDD, PVDD 1.8 4.5
V
High-level input voltage SDL, SDR 1.5 V
IH
V
Low-level input voltage SDL, SDR 0.5 V
IL
T
Operating free-air temperature – 40 85 ° C
A
(1) Device can shut down for VDD > 4.5 V to prevent damage to the device.
ELECTRICAL CHARACTERISTICS
TA= 25 ° C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|VOS| Output offset voltage V
PSRR Power Supply Rejection Ratio V
V
V
High-level output voltage V
OH
Low-level output voltage V
OL
|IIH| High-level input current ( SDL, SDR) V
|IIL| Low-level input current ( SDL, SDR) V
I
Supply Current
DD
= 1.8 V to 4.5 V, Inputs grounded 8 mV
DD
= 1.8 V to 4.5 V – 69 – 80 dB
DD
= 3 V, RL= 16 Ω 2.2 V
DD
= 3 V, RL= 16 Ω – 1.1 V
DD
= 4.5 V, VI= V
DD
= 4.5 V, VI= 0 V 1 µA
DD
V
= 1.8 V, No load, SDL= SDR = V
DD
V
= 3 V, No load, SDL = SDR = V
DD
V
= 4.5 V, No load, SDL = SDR = V
DD
Shutdown mode, V
DD
DD
DD
DD
= 1.8 V to 4.5 V 1 µA
DD
MIN MAX UNIT
5.3 6.5
6.5 8.0 mA
8.0 10.0
(1)
1 µA
V
4 Copyright © 2004 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA4411 TPA4411M
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
OPERATING CHARACTERISTICS
V
= 3 V , TA= 25 ° C, RL= 16 Ω (unless otherwise noted)
DD
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
THD = 1%, V
P
O
Output power (Outputs In Phase) mW
THD = 1%, V
THD = 1%, V
Ω
THD+N Total harmonic distortion plus noise
PO= 25 mW, f = 1 kHz 0.054%
PO= 25 mW, f = 20 kHz 0.010%
Crosstallk PO= 20 mW, f = 1 kHz – 83 dB
200-mV
pp
k
SVR
A
v
Δ A
v
Supply ripple rejection ratio 200-mV
pp
200-mV
pp
Closed-loop voltage gain – 1.45 – 1.5 – 1.55 V/V
Gain matching 1%
Slew rate 2.2 V/µs
Maximum capacitive load 400 pF
V
n
Noise output voltage 10 µV
Electrostatic discharge, IEC OUTR, OUTL ± 8 kV
f
osc
Charge pump switching frequency 280 320 420 kHz
Start-up time from shutdown 450 µs
Input impedance 12 15 18 k Ω
SNR Signal-to-noise ratio Po= 40 mW (THD+N = 0.1%) 98 dB
Thermal shutdown
Threshold 150 170 ° C
Hysteresis 15 ° C
= 3 V, f = 1 kHz 50
DD
= 4.5 V, f = 1 kHz 100
DD
= 3 V, f = 1 kHz, RL= 32
DD
50
ripple, f = 217 Hz – 82.5
ripple, f = 1 kHz – 70.4 dB
ripple, f = 20 kHz – 45.1
RMS
Copyright © 2004 – 2008, Texas Instruments Incorporated 5
Product Folder Link(s): TPA4411 TPA4411M
_
+
_
+
SVDD
SVSS
SVDD
SVSS
Charge
Pump
Bias
Circuitry
TPA4411
SGND
Av = −1.5 V/V
Audio Out − R
Audio Out − L
C1P
C1N
PVSS
Audio In − R
Audio In − L
SDx
Short
Circuit
Protection
Shutdown
Control
SV
DD
PV
DD
C1P C1N
SV
SS
PV
SS
OUTR
OUTL
SDR
INL
INR
SDL
1.8 − 4.5 V
TPA4411
TPA2012D2
TLV320AIC26
or
TLV320AIC28
HPL
or
SPK1
HPR
or
SPK2
PGND
SGND
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
Functional Block Diagram
APPLICATION CIRCUIT
6 Copyright © 2004 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPA4411 TPA4411M
0.001
0.01
0.1
1
10
100
1 10
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
In Phase
180° Out of Phase
30
VDD = 1.8 V,
RL = 16 Ω,
fIN = 20 Hz
Single
Channel
0.01
0.1
1
10
100
1 10 30
In Phase
Single Channel
180° Out of Phase
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 1.8 V,
RL = 16 Ω,
fIN = 10 kHz
0.01
0.1
1
10
100
1 10 30
In Phase
Single Channel
180° Out of Phase
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 1.8 V,
RL = 16 Ω,
fIN = 1 kHz
0.01
0.1
1
10
100
1 10
30
In Phase
Single Channel
180° Out of Phase
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 1.8 V,
RL = 32 Ω,
fIN = 1 kHz
0.01
0.1
1
10
100
1 10
30
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 1.8 V,
RL = 32 Ω,
fIN = 10 kHz
0.001
0.01
0.1
1
10
100
1 10 30
In Phase
Single Channel
180° Out of Phase
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 1.8 V,
RL = 32 Ω,
fIN = 20 Hz
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
TYPICAL CHARACTERISTICS
C
= C
(PUMP)
(PVSS)
= 2.2 µF , C
= 1 µF (unless otherwise noted)
IN
Table of Graphs
Total harmonic distortion + noise vs Output power 1 – 24
Total harmonic distortion + noise vs Frequency 25 – 32
Supply voltage rejection ratio vs Frequency 33, 34
Power dissipation vs Output power 35 – 42
Crosstalk vs Frequency 43 – 46
Output power vs Supply voltage 47 – 50
Quiescent supply current vs Supply voltage 51
Output power vs Load resistance 5 – 60
Output spectrum 61
Gain and phase vs Frequency 62, 63
TPA4411
TPA4411M
FIGURE
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
Figure 1. Figure 2. Figure 3.
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
Copyright © 2004 – 2008, Texas Instruments Incorporated 7
Figure 4. Figure 5. Figure 6.
Product Folder Link(s): TPA4411 TPA4411M
0.01
0.1
1
10
100
1 10 100 300
In Phase
Single Channel
180° Out of Phase
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3 V,
RL = 16 Ω,
fIN = 10 kHz
0.001
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3 V,
RL = 16 Ω,
fIN = 20 Hz
0.01
0.1
1
10
100
1 10 100 300
In Phase
Single Channel
180° Out of Phase
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3 V,
RL = 16 Ω,
fIN = 1 kHz
0.001
0.01
0.1
1
10
100
1 10 100 300
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
In Phase
Single Channel
180° Out of Phase
VDD = 3 V,
RL = 32 Ω,
fIN = 20 Hz
0.01
0.1
1
10
100
1 10
100 300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3 V,
RL = 32 Ω,
fIN = 1 kHz
0.001
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3 V,
RL = 32 Ω,
fIN = 10 kHz
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.6 V,
RL = 16 Ω,
fIN = 1 kHz
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.6 V,
RL = 16 Ω,
fIN = 10 kHz
0.001
0.01
0.1
1
10
100
1 10 100
300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.6 V,
RL = 16 Ω,
fIN = 20 Hz
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
Figure 7. Figure 8. Figure 9.
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
8 Copyright © 2004 – 2008, Texas Instruments Incorporated
Figure 10. Figure 11. Figure 12.
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
Figure 13. Figure 14. Figure 15.
Product Folder Link(s): TPA4411 TPA4411M
0.001
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.6 V,
RL = 32 Ω,
fIN = 20 Hz
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
Single Channel
PO − Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
VDD = 3.6 V,
RL = 32 Ω,
fIN = 1 kHz
0.001
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
P
O
− Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
Single Channel
VDD = 3.6 V,
RL = 32 Ω,
fIN = 10 kHz
0.001
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
P
O
− Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
Single Channel
VDD = 4.5 V,
RL = 16 Ω,
fIN = 20 Hz
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
P
O
− Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
Single Channel
VDD = 4.5 V,
RL = 16 Ω,
fIN = 1 k Hz
0.01
0.1
1
10
100
1
100 300
In Phase
180° Out of Phase
Single Channel
P
O
− Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
10
VDD = 4.5 V,
RL = 16 Ω,
fIN = 10 k Hz
0.001
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
P
O
− Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
Single Channel
VDD = 4.5 V,
RL = 32 Ω,
fIN = 20 Hz
0.01
0.1
1
10
100
1 10
100
300
In Phase
180° Out of Phase
P
O
− Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
Single Channel
VDD = 4.5 V,
RL = 32 Ω,
fIN = 1 kHz
0.01
0.1
1
10
100
1 10 100 300
In Phase
180° Out of Phase
P
O
− Output Power − mW
THD+N − Total Harmonic Distortion + Noise − %
Single Channel
VDD = 4.5 V,
RL = 32 Ω,
fIN = 10 kHz
TPA4411
TPA4411M
SLOS430E – AUGUST 2004 – REVISED MARCH 2008
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
Figure 16. Figure 17. Figure 18.
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION
Copyright © 2004 – 2008, Texas Instruments Incorporated 9
Figure 19. Figure 20. Figure 21.
+ NOISE + NOISE + NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER OUTPUT POWER
Figure 22. Figure 23. Figure 24.
Product Folder Link(s): TPA4411 TPA4411M