Texas Instruments TLV2324IPWR, TLV2324IPWLE, TLV2324IPW, TLV2324IN, TLV2324IDR Datasheet

TLV2322, TLV2322Y, TLV2324, TLV2324Y

LinCMOS LOW-VOLTAGE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

Wide Range of Supply Voltages Over
Specified Temperature Range:

T

A

= –40°C to 85°C...2 V to 8 V

D

Fully Characterized at 3 V and 5 V

D

Single-Supply Operation

D

Common-Mode Input Voltage Range
Extends Below the Negative Rail and up to
V

DD

–1 V at TA = 25°C

D

Output Voltage Range Includes Negative
Rail

D

High Input Impedance...10

12

Ω Typical

D

ESD-Protection Circuitry

D

Designed-In Latch-Up Immunity

description

The TL V232x operational amplifiers are in a family
of devices that has been specifically designed for
use in low-voltage single-supply applications.
This amplifier is especially well suited to
ultra-low-power systems that require devices to
consume the absolute minimum of supply
currents. Each amplifier is fully functional down to
a minimum supply voltage of 2 V, is fully
characterized, tested, and specified at both 3-V
and 5-V power supplies. The common-mode input
voltage range includes the negative rail and
extends to within 1 V of the positive rail.

These amplifiers are specifically targeted for use
in very low-power, portable, battery-driven
applications with the maximum supply current per
operational amplifier specified at only 27 µA over
its full temperature range of –40°C to 85°C.

AVAILABLE OPTIONS

PACKAGED DEVICES

T

A

V

IO

max

AT

25°C

SMALL OUTLINE

†

(D)

PLASTIC DIP

(N)

PLASTIC DIP

(P)

TSSOP

‡

(PW)

CHIP FORM

§

(Y)

°

°

9 mV TLV2322ID — TLV2322IP TLV2322IPWLE TLV2322Y

–

40°C to 85°C

10 mV TLV2324ID TLV2324IN — TLV2324IPWLE TLV2324Y

†

The D package is available taped and reeled. Add R suffix to the device type (e.g., TL V2322IDR).

‡

The PW package is only available left-end taped and reeled (e.g., TLV2322IPWLE).

§

Chip forms are tested at 25°C only.

Copyright  1997, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

1
2
3
4

8
7
6
5

1OUT

1IN–
1IN+

V

DD–

/GND

V

DD

2OUT
2IN–
2IN+

1
2
3

4

8
7
6
5

1OUT

1IN–

1IN+

V

DD –

/GND

V

DD+

2OUT
2IN–
2IN+

1
2
3
4
5
6
7

14
13
12
11
10

9
8

1OUT

1IN –
1IN +

V

DD+

2IN +
2IN –

2OUT

4OUT
4IN –
4IN +
V

DD –

/GND
3IN +
3IN –
3OUT

1

14

8

7

4OUT
4IN –
4IN +
V

DD –

/GND
3IN +
3IN –
3OUT

1OUT

1IN –
1IN +
V

DD+

2IN +
2IN –

2OUT

TLV2322

D OR P PACKAGE

(TOP VIEW)

TLV2322

PW PACKAGE

(TOP VIEW)

TLV2324

D OR N PACKAGE

(TOP VIEW)

TLV2324

PW PACKAGE

(TOP VIEW)

TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS technology . The LinCMOS process also features extremely high input impedance and ultra-low bias
currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter
applications.

T o facilitate the design of small portable equipment, the TL V232x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only

1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The

TL V232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V
as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD can result in the degradation of the device parametric performance.

TLV2322Y chip information

This chip, when properly assembled, displays characteristics similar to the TL V2322I. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.

+

–

1OUT

1IN+

1IN–

V

DD

V

DD–

/GND

(8)

(3)

(2)

(4)

+

–

2OUT

2IN+

2IN–

(5)

(6)

59

72

(5)

(4)

(3)

(2)

(6)

(7)

(8)

(1)

TLV2322, TLV2322Y, TLV2324, TLV2324Y

LinCMOS LOW-VOLTAGE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2324Y chip information

This chip, when properly assembled, display characteristics similar to the TLV2324. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

+

–

1OUT

1IN+

1IN–

V

DD

(4)

(6)

(3)

(2)

(5)

(1)

2IN+

2IN–

2OUT

(11)

V

DD–

/GND

+

–

3OUT

3IN+

3IN–

(13)

(10)

(9)

(12)

(8)

–

+

(14)

4OUT

4IN+

4IN–

+

–

(7)

CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (12) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

68

108

(1)

(2)

(3) (4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)(12)

(13)

(14)

TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

equivalent schematic (each amplifier)

IN+

P1

P2

P3 P4

P5 P6

IN–

R1

R2

R3

R4

R5

R6

R7

N1 N2

N3

N4

N5

N6

N7

D1

D2

C1

OUT

V

DD

GND

ACTUAL DEVICE COMPONENT COUNT

†

COMPONENT TLV2342 TLV2344

Transistors 54 108
Resistors 14 28
Diodes 4 8
Capacitors 2 4

†

Includes both amplifiers and all ESD, bias, and trim
circuitry.

TLV2322, TLV2322Y, TLV2324, TLV2324Y

LinCMOS LOW-VOLTAGE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

5

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

†

Supply voltage, V

DD

(see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Differential input voltage, V

ID

(see Note 2) VDD±. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, V

I

(any input) –0.3 V to V

DD

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input current, I

I

±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output current, I

O

±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Duration of short-circuit current at (or below) T

A

= 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

A

–40°C to 85° C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2. Differential voltages are at the noninverting input with respect to the inverting input.

3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).

DISSIPATION RATING TABLE

TA ≤ 25°C DERATING FACTOR TA = 85°C

PACKAGE

POWER RATING ABOVE TA = 25°C POWER RATING

D–8 725 mW 5.8 mW/°C 377 mW

D–14 950 mW 7.6 mW/°C 494 mW

N 1575 mW 12.6 mW/°C 819 mW
P 1000 mW 8.0 mW/°C 520 mW

PW–8 525 mW 4.2 mW/°C 273 mW

PW–14 700 mW 5.6 mW/°C 364 mW

recommended operating conditions

MIN MAX UNIT

Supply voltage, V

DD

2 8 V

p

VDD = 3 V –0.2 1.8

Common-mode input voltage, V

IC

VDD = 5 V –0.2 3.8

V

Operating free-air temperature, T

A

–40 85 °C

TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

6

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2322 electrical characteristics at specified free-air temperature

TLV2322

PARAMETER TEST CONDITIONS

T

A

†

VDD = 3 V VDD = 5 V

UNIT

A

MIN TYP MAX MIN TYP MAX

p

VO = 1 V,
V

I

= 1 V,

25°C 1.1 9 1.1 9

VIOInput offset voltage

IC

,

RS = 50 Ω,
RL = 1 MΩ

Full range 11 11

mV

α

VIO

Average temperature coefficient
of input offset voltage

25°C to

85°C

1 1.1 µV/°C

p

V

= 1 V,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

O

,

VIC = 1 V

85°C 22 1000 24 1000

pA

p

V

= 1 V,

25°C 0.6 0.6

p

IIBInput bias current (see Note 4)

O

,

VIC = 1 V

85°C 175 2000 200 2000

pA

°

–0.2

–0.3

–0.2

–0.3

Common-mode input voltage

25°C

to2to

2.3

to4to

4.2

V

V

ICR

g

range (see Note 5)

–0.2

–0.2

Full range

to

1.8

to

3.8

V

p

VIC = 1 V,

25°C 1.75 1.9 3.2 3.8

VOHHigh-level output voltage

V

ID

=

100 mV

,

IOH = –1 mA

Full range 1.7 3

V

p

VIC = 1 V,

25°C 115 150 95 150

VOLLow-level output voltage

V

ID

= –

100 mV

,

IOL = 1 mA

Full range 190 190

mV

Large-signal differential voltage

VIC = 1 V,

25°C 50 400 50 520

A

VD

gg g

amplification

R

L

= 1 MΩ,

See Note 6

Full range 50 50

V/mV

VO = 1 V,

25°C 65 88 65 94

CMRR

Common-mode rejection ratio

V

IC

=

V

ICR

min

,

RS = 50 Ω

Full range 60 60

dB

Supply-voltage rejection ratio

VIC = 1 V,

25°C 70 86 70 86

k

SVR

ygj

(∆VDD/∆VIO)

V

O

= 1 V,

RS = 50 Ω

Full range 65 65

dB

pp

V

= 1 V, V

= 1 V,

25°C 12 34 20 34

IDDSupply current

O

,

IC

,

No load

Full range 54 54

µ

A

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, V

O(PP)

= 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5

TLV2322, TLV2322Y, TLV2324, TLV2324Y

LinCMOS LOW-VOLTAGE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

7

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2322 operating characteristics at specified free-air temperature, VDD = 3 V

TLV2322

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

VIC = 1 V,

V

I(PP)

= 1 V,

p

25°C 0.02

SR

Slew rate at unity gain

R

L

= 1 MΩ,

C

L

= 20 F,

°

V/µs

S

ee Figure 35

85°C

0.02

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 36

RS = 20 Ω,

25°C 68

nV/√Hz

p

V

= V

, C

= 20 pF,

25°C 2.5

BOMMaximum output-swing bandwidth

OOH

,

RL = 1 MΩ,

L

,

See Figure 35

85°C 2

kH

z

V

= 10 mV, C

= 20 pF,

25°C 27

B1Unity-gain bandwidth

I

,

RL = 1 MΩ,

L

,

See Figure 37

85°C

21

kH

z

V

= 10 mV

,

f= B

,

–40°C 39°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 1 MΩ,

25°C

34°

See Figure 37

85°C 28°

TLV2322 operating characteristics at specified free-air temperature, VDD = 5 V

TLV2322

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.03

V

IC

= 1 V,

RL = 1 MΩ,

V

I(PP)

= 1

V

85°C 0.03

SR

Slew rate at unity gain

L

,

CL = 20 pF,

25°C 0.03

V/µs

See Figure 35

V

I(PP)

= 2.5

V

85°C 0.02

V

n

Equivalent input noise voltage

f = 1 kHz,
See Figure 36

RS = 20 Ω,

25°C 68

nV/√Hz

p

V

= V

, C

= 20 pF,

25°C 5

BOMMaximum output-swing bandwidth

OOH

,

RL = 1 MΩ,

L

,

See Figure 35

85°C

4

kH

z

V

= 10 mV, C

= 20 pF,

25°C 85

B1Unity-gain bandwidth

I

,

RL = 1 MΩ,

L

,

See Figure 37

85°C

55

kH

z

V

= 10 mV

,

f = B

,

–40°C 38°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 1 MΩ,

25°C

34°

See Figure 37

85°C 28°

TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

8

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2324I electrical characteristics at specified free-air temperature

TLV2324I

PARAMETER TEST CONDITIONS

T

A

†

VDD = 3 V VDD = 5 V

UNIT

A

MIN TYP MAX MIN TYP MAX

V

= 1 V,

°

p

V

O

1 V,

V

I

= 1 V,

25°C

1.1101.1

10

VIOInput offset voltage

IC

,

RS = 50 Ω,

mV

S

RL = 1 MΩ,

Full range

12

12

Average temperature coefficient 25°C to

°

α

VIO

g

of input offset voltage 85°C

1

1.1µV/°C

p

V

= 1 V,

25°C 0.1 0.1

p

IIOInput offset current (see Note 4)

O

,

VIC = 1 V

85°C 22 1000 24 1000

pA

p

V

= 1 V,

25°C 0.6 0.6

p

IIBInput bias current (see Note 4)

O

,

VIC = 1 V

85°C 175 2000 200 2000

pA

–0.2 –0.3 –0.2 –0.3

25°C

to to to to

V

Common-mode input

2 2.3 4 4.2

V

ICR

voltage range (see Note 5)

–0.2 –0.2

Full range

to to

V

g

1.8 3.8

°

V

IC

= 1 V,

25°C

1.75

1.9

3.2

3.8

VOHHigh-l

evel output voltage

V

ID

=

100 mV

,

IOH = –1 mA

Full range 1.7 3

V

°

V

IC

= 1 V,

25°C

115

15095150

VOLL

ow-level output voltage

V

ID

= –

100 mV

,

IOL = 1 mA

Full range 190 190

m

V

°

Large-signal differential

V

IC

= 1 V,

25°C5040050520

A

VD

gg

voltage amplification

R

L

= 1 MΩ,

See Note 6

Full range 50 50

V/mV

°

V

O

= 1 V,

25°C65886594

CMRR

C

ommon-mode rejection ratio

V

IC

=

V

ICR

min,

RS = 50 Ω

Full range 60 60

dB

°

Supply-voltage rejection ratio VIC = 1 V, VO = 1 V,

25°C70867086

k

SVR

ygj

(∆VDD/∆VIO)

IC O

RS = 50 Ω

Full range 65 65

dB

°

pp

VO = 1 V, VIC = 1 V,

25°C24683968

IDDSu ly current

OIC

No load

Full range 108 108

µA

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, V

O(PP)

= 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

TLV2322, TLV2322Y, TLV2324, TLV2324Y

LinCMOS LOW-VOLTAGE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

9

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2324I operating characteristics at specified free-air temperature, VDD = 3 V

TLV2324I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

°

V

IC

= 1 V,

V

I(PP)

= 1 V,

p

25°C

0.02

SR

Slew rate at unity gain

R

L

= 1 MΩ,

C

L

= 20 pF,

°

V/µs

S

ee Figure 35

85°C

0.02

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 36

S

,

25°C

68

n

V√/H

z

p

V

= V

, C

= 20 pF,

25°C 2.5

BOMMaximum output-swing bandwidth

OOH

,

RL = 1 MΩ,

L

,

See Figure 35

85°C

2

kH

z

V

= 10 mV, C

= 20 pF,

25°C 27

B1Unity-gain bandwidth

I

,

RL = 1 MΩ,

L

,

See Figure 37

85°C

21

kH

z

V

= 10 mV

,

f = B

,

–40°C 39°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 1 MΩ,

25°C

34°

See Figure 37

85°C 28°

TLV2324I operating characteristics at specified free-air temperature, VDD = 5 V

TLV2324I

PARAMETER

TEST CONDITIONS

T

A

MIN TYP MAX

UNIT

25°C 0.03

V

IC

= 1 V,

RL = 1 MΩ,

V

I(PP)

= 1

V

85°C 0.03

SR

Slew rate at unity gain

L

,

CL = 20 pF,

25°C 0.03

V/µs

See Figure 35

V

I(PP)

=

2.5 V

85°C 0.02

p

f = 1 kHz, R

= 20 Ω,

°

VnEquivalent input noise voltage

,

See Figure 36

S

,

25°C

68

n

V/√H

z

p

V

= V

, C

= 20 pF,

25°C 5

BOMMaximum output-swing bandwidth

OOH

,

RL = 1 MΩ,

L

,

See Figure 35

85°C

4

kH

z

V

= 10 mV, C

= 20 pF,

25°C 85

B1Unity-gain bandwidth

I

,

RL = 1 MΩ,

L

,

See Figure 37

85°C

55

kH

z

V

= 10 mV

,

f = B

,

–40°C 38°

φ

m

Phase margin

V

I

10

mV,

CL = 20 pF,

f B1,

RL = 1 MΩ,

25°C

34°

See Figure 37

85°C 28°

TLV2322, TLV2322Y, TLV2324, TLV2324Y
LinCMOS LOW-VOLTAGE LOW-POWER
OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

10

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TLV2322Y electrical characteristics, T

A

= 25°C

TLV2322Y

PARAMETER TEST CONDITIONS

VDD = 3 V VDD = 5 V

UNIT

MIN TYP MAX MIN TYP MAX

V

IO

Input offset voltage

VO = 1 V,
RS = 50 Ω,

VIC = 1 V,
RL = 1 MΩ

1.1 1.1 mV

I

IO

Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA

I

IB

Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA

V

ICR

Common-mode input voltage
range (see Note 5)

–0.3

to

2.3

–0.3

to

4.2

V

V

OH

High-level output voltage

VIC = 1 V,
IOH = –1 mA

VID = –100 mV,

1.9 3.8 V

V

OL

Low-level output voltage

VIC = 1 V,
IOL = 1 mA

VID = 100 mV ,

115 95 mV

A

VD

Large-signal differential voltage
amplification

VIC = 1 V,
See Note 6

RL = 1 MΩ,

400 520 V/mV

CMRR Common-mode rejection ratio

VO = 1 V,
RS = 50 Ω

VIC = V

ICR

min,

88 94 dB

k

SVR

Supply-voltage rejection ratio
(∆VDD / ∆VID)

VO = 1 V,
RS = 50 Ω

VIC = 1 V,

86 86 dB

I

DD

Supply current

VO = 1 V,
No load

VIC = 1 V,

12 20 µA

NOTES: 4. The typical values of input bias current offset current below 5 pA are determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.