TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Output Swing Includes Both Supply Rails
D
Low Noise...15 nV/√Hz Typ at f = 1 kHz
D
Low Input Bias Current...1 pA Typ
D
Fully Specified for Single-Supply 3-V and
5-V Operation
D
Common-Mode Input Voltage Range
Includes Negative Rail
D
High Gain Bandwidth...2 MHz at
V
DD
= 5 V with 600 Ω Load
D
High Slew Rate...1.6 V/µs at VDD = 5 V
D
Wide Supply Voltage Range
2.7 V to 10 V
D
Macromodel Included
description
The TL V2231 is a single low-voltage operational amplifier available in the SOT-23 package. It offers 2 MHz of
bandwidth and 1.6 V/µs of slew rate for applications requiring good ac performance. The device exhibits
rail-to-rail output performance for increased dynamic range in single or split supply applications. The TL V2231
is fully characterized at 3 V and 5 V and is optimized for low-voltage applications.
The TLV2231, exhibiting high input impedance and low noise, is excellent for small-signal conditioning of
high-impedance sources, such as piezoelectric transducers. Because of the micropower dissipation levels
combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing
applications. In addition, the rail-to-rail output feature with single- or split-supplies makes this family a great
choice when interfacing with analog-to-digital converters (ADCs). The device can also drive 600-Ω loads for
telecom applications.
With a total area of 5.6mm
2
, the SOT-23 package only requires one-third the board space of the standard 8-pin
SOIC package. This ultra-small package allows designers to place single amplifiers very close to the signal
source, minimizing noise pick-up from long PCB traces. TI has also taken special care to provide a pinout that
is optimized for board layout (see Figure 1). Both inputs are separated by GND to prevent coupling or leakage
paths. The OUT and IN– terminals are on the same end of the board for providing negative feedback. Finally,
gain setting resistors and decoupling capacitor are easily placed around the package.
V
I
V
DD+
OUTIN–
VDD/GND
IN+
C
R
I
R
F
GND
V+
V
O
1
2
3
4
5
Figure 1. Typical Surface Mount Layout for a Fixed-Gain Noninverting Amplifier
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DBV PACKAGE
(TOP VIEW)
5
43
1
2
IN–
V
DD–
/GND
IN+ V
DD+
OUT
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1997, Texas Instruments Incorporated
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
°
PACKAGED DEVICES
CHIP
T
A
VIOmax AT 25°C
SOT-23 (DBV)
†
SYMBOL
FORM
‡
(Y)
0°C to 70°C 3 mV TLV2231CDBV VAEC
–40°C to 85°C 3 mV TLV2231IDBV VAEI
TLV2231Y
†
The DBV package available in tape and reel only.
‡
Chip forms are tested at TA = 25°C only.
TLV2231Y chip information
This chip, when properly assembled, displays characteristics similar to the TL V2231C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–
OUT
IN+
IN–
V
DD+
(5)
(1)
(3)
(4)
(2)
V
DD–
/GND
40
(3)
(2)
(1)
(5)
(4)
32
TLV2231, TLV2231Y
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
RAIL-TO-RAILAdvanced LinCMOS
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
• 6–3
equivalent schematic
Q3 Q6 Q9 Q12 Q14 Q16
Q2 Q5 Q7 Q8 Q10 Q11
D1
Q17Q15Q13
Q4Q1
R5
C1
V
DD+
IN+
IN–
R3
R7
R1
R2
OUT
V
DD–/ GND
COMPONENT COUNT
†
Transistors
Diodes
Resistors
Capacitors
23
5
11
2
†
Includes both amplifiers and all
ESD, bias, and trim circuitry
R6
C2
R4
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input, see Note 1) –0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
(each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into V
DD+
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of V
DD–
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current (at or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
: TLV2231C 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLV2231I –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150° C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package 260°C. . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
DD –
.
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought
below V
DD–
– 0.3 V.
3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
T
≤ 25°C DERATING FACTOR T
= 70°C T
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°CAPOWER RATINGAPOWER RATING
DBV 150 mW 1.2 mW/°C 96 mW 78 mW
recommended operating conditions
TLV2231C TLV2231I
MIN MAX MIN MAX
UNIT
Supply voltage, VDD(see Note 1)
2.7 10 2.7 10 V
Input voltage range, V
I
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Common-mode input voltage, V
IC
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Operating free-air temperature, T
A
0 70 –40 85 °C
NOTE 1: All voltage values, except differential voltages, are with respect to V
DD –
.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
TLV2231C TLV2231I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.75 3 0.75 3 mV
Temperature
p
Full range
°
α
VIO
coe
fficient of i
npu
t
offset voltage
0.5
0.5µV/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD±
= ±1.5 V,
VO = 0,
V
IC
= 0,
RS = 50 Ω
25°C
0.003 0.003 µV/mo
p
25°C 0.5 0.5
p
IIOInput offset current
Full range 150 150
pA
p
25°C 1 1
p
IIBInput bias current
Full range 150 150
pA
0 –0.3 0 –0.3
25°C
0to0.3to0to0.3
to
Common-mode input
2 2.2 2 2.2
V
ICR
voltage range
R
S
= 50 Ω,
|VIO| ≤5 mV
0 0
V
Full range
0to0
to
g
1.7 1.7
IOH = –1 mA 25°C 2.87 2.87
V
OH
High-level output
25°C 2.74 2.74
V
voltage
I
OH
= –2
mA
Full range 2 2
VIC = 1.5 V, IOL = 50 µA 25°C 10 10
V
OL
Low-level output
25°C 100 100
mV
voltage
V
IC
=
1.5 V
,
I
OL
=
500 µA
Full range 300 300
-
25°C 1 1.6 1 1.6
A
VD
Large signal
differential voltage
VIC = 1.5 V,
R
L
=
600 Ω
‡
Full range 0.3 0.3
V/mV
VD
amplification
V
O
= 1 V to 2
V
RL = 1 MΩ
‡
25°C 250 250
r
id
Differential input
resistance
25°C 10
12
10
12
Ω
r
ic
Common-mode input
resistance
25°C 10
12
10
12
Ω
c
ic
Common-mode input
capacitance
f = 10 kHz 25°C 6 6 pF
z
o
Closed-loop output
impedance
f = 1 MHz, AV = 1 25°C 156 156
Ω
Common-mode V
= 0 to 1.7 V,
25°C 60 70 60 70
CMRR
rejection ratio
IC
,
VO = 1.5 V, RS = 50 Ω
Full range 55 55
dB
Supply voltage
V
= 2.7 V to 8 V,
25°C 70 96 70 96
k
SVR
rejection ratio
(∆VDD /∆VIO)
DD
,
VIC = VDD/2, No load
Full range 70 70
dB
pp
25°C 750 1200 750 1200
IDDSupply current
V
O
=
1.5 V
,
No load
Full range 1500 1500
µ
A
†
Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is – 40°C to 85°C.
‡
Referenced to 1.5 V
NOTE 4: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V
TLV2231C TLV2231I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
25°C
0.75 1.25 0.75 1.25
SR
Slew rate at unit
y
gain
VO = 1.1 V to 1.9 V,
CL = 100 pF
‡
RL = 600 Ω‡,
Full
range
0.5 0.5
V/µs
Equivalent input
f = 10 Hz 25°C 105 105
V
n
q
noise voltage
f = 1 kHz
25°C 16 16
n
V/√H
z
Peak-to-peak
p
f = 0.1 Hz to 1 Hz 25°C 1.4 1.4
V
N(PP)
equivalent inpu
t
noise voltage
f = 0.1 Hz to 10 Hz
25°C 1.5 1.5
µ
V
I
n
Equivalent input
noise current
25°C 0.6 0.6
fA/√Hz
VO = 1 V to 2 V,
AV = 1
°
0.285% 0.285%
Total harmonic
f
= 20 kHz,
RL = 600 Ω
‡
AV = 10
25°C
7.2% 7.2%
THD+N
distortion plus
=
AV = 1 0.014% 0.014%
noise
V
O
= 1 V to 2 V,
f = 20 kHz,
AV = 10
25°C
0.098% 0.098%
RL = 600 Ω
§
AV = 100 0.13% 0.13%
Gain-bandwidth
product
f = 10 kHz,
CL = 100 pF
‡
RL = 600 Ω‡,
25°C 1.9 1.9 MHz
B
OM
Maximum outputswing bandwidth
V
O(PP)
= 1 V,
RL = 600 Ω‡,
AV = 1,
CL = 100 pF
‡
25°C 60 60 kHz
AV = –1,
Step = 1 V to 2 V,
To 0.1%
°
0.9 0.9
tsSettling time
,
RL = 600 Ω‡,
CL = 100 pF
‡
To 0.01%
25°C
1.5 1.5
µ
s
φ
m
Phase margin at
unity gain
RL = 600 Ω‡, CL = 100 pF
‡
25°C 50° 50°
Gain margin
L,L
25°C 8 8 dB
†
Full range is –40°C to 85°C.
‡
Referenced to 1.5 V
§
Referenced to 0 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
TLV2231C TLV2231I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.71 3 0.71 3 mV
Temperature
p
Full range
°
α
VIO
coe
fficient of i
npu
t
offset voltage
0.5
0.5µV/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD±
= ±2.5 V,
VO = 0,
V
IC
= 0,
RS = 50 Ω
25°C
0.003 0.003 µV/mo
p
25°C 0.5 0.5
p
IIOInput offset current
Full range 150 150
pA
p
25°C 1 1
p
IIBInput bias current
Full range 150 150
pA
0 –0.3 0 –0.3
25°C
0to0.3to0to0.3
to
Common-mode input
4 4.2 4 4.2
V
ICR
voltage range
R
S
= 50 Ω,
|VIO| ≤5 mV
0 0
V
Full range
0to0
to
g
3.7 3.7
IOH = –1 mA 25°C 4.9 4.9
V
OH
High-level output
25°C 4.6 4.6
V
voltage
I
OH
= –4
mA
Full range 4 4
VIC = 2.5 V, IOL = 500 µA 25°C 80 80
V
OL
Low-level output
25°C 160 160
mV
voltage
V
IC
=
2.5 V
,
I
OL
=
1 mA
Full range 500 500
-
25°C 1 1.5 1 1.5
A
VD
Large signal
differential voltage
VIC = 2.5 V,
R
L
=
600 Ω
‡
Full range 0.3 0.3
V/mV
VD
amplification
V
O
= 1 V to 4
V
RL = 1 MΩ
‡
25°C 400 400
r
id
Differential input
resistance
25°C 10
12
10
12
Ω
r
ic
Common-mode input
resistance
25°C 10
12
10
12
Ω
c
ic
Common-mode input
capacitance
f = 10 kHz 25°C 6 6 pF
z
o
Closed-loop output
impedance
f = 1 MHz, AV = 1 25°C 138 138
Ω
Common-mode V
= 0 to 2.7 V,
25°C 60 70 60 70
CMRR
rejection ratio
IC
,
VO = 2.5 V, RS = 50 Ω
Full range 55 55
dB
Supply voltage
V
= 4.4 V to 8 V,
25°C 70 96 70 96
k
SVR
rejection ratio
(∆VDD /∆VIO)
DD
,
VIC = VDD/2, No load
Full range 70 70
dB
pp
25°C 850 1300 850 1300
IDDSupply current
V
O
=
2.5 V
,
No load
Full range 1600 1600
µ
A
†
Full range for the TLV2231C is 0°C to 70°C. Full range for the TLV2231I is – 40°C to 85°C.
‡
Referenced to 2.5 V
NOTE 5: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
TLV2231C TLV2231I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
25°C
1 1.6 1 1.6
SR
Slew rate at unit
y
gain
V
O
= 1.5 V to 3.5 V,
CL = 100 pF
‡
R
L
=
600 Ω
‡
,
Full
range
0.7 0.7
V/µs
Equivalent input
f = 10 Hz 25°C 100 100
V
n
q
noise voltage
f = 1 kHz
25°C 15 15
n
V/√H
z
Peak-to-peak
p
f = 0.1 Hz to 1 Hz 25°C 1.4 1.4
V
N(PP)
equivalent inpu
t
noise voltage
f = 0.1 Hz to 10 Hz
25°C 1.5 1.5
µ
V
I
n
Equivalent input
noise current
25°C 0.6 0.6
fA/√Hz
VO = 1.5 V to 3.5 V,
AV = 1
°
0.409% 0.409%
Total harmonic
f
= 20 kHz,
RL = 600 Ω
‡
AV = 10
25°C
3.68% 3.68%
THD+N
distortion plus
=
AV = 1 0.018% 0.018%
noise
V
O
= 1.5 V to 3.5 V,
f = 20 kHz,
AV = 10
25°C
0.045% 0.045%
RL = 600 Ω
§
AV = 100 0.1 16% 0.116%
Gain-bandwidth
product
f = 10 kHz,
CL = 100 pF
‡
RL = 600 Ω‡,
25°C 2 2 MHz
B
OM
Maximum
output-swing
bandwidth
V
O(PP)
= 1 V,
RL = 600 Ω‡,
AV = 1,
CL = 100 pF
‡
25°C 300 300 kHz
AV = –1,
Step = 1.5 V to 3.5 V ,
To 0.1%
°
0.95 0.95
tsSettling time
,
RL = 600 Ω‡,
CL = 100 pF
‡
To 0.01%
25°C
2.4 2.4
µ
s
φ
m
Phase margin at
unity gain
R
= 600 Ω‡, C
= 100 pF
‡
25°C 48° 48°
Gain margin
L,L
25°C 8 8 dB
†
Full range is –40°C to 85°C.
‡
Referenced to 2.5 V
§
Referenced to 0 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)
TLV2231Y
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
V
IO
Input offset voltage
750 µV
I
IO
Input offset current
VDD± = ±1.5 V,
VIC = 0, VO = 0,
0.5 pA
I
IB
Input bias current
R
S
= 50
Ω
1 pA
–0.3
V
ICR
Common-mode input voltage range |VIO| ≤5 mV, RS = 50 Ω
to
V
ICR
gg
IO
S
2.2
V
OH
High-level output voltage IOH = –1 mA 2.87 V
p
VIC = 1.5 V, IOL = 50 µA 10
VOLLow-level output voltage
VIC = 1.5 V, IOL = 500 µA 100
mV
Large-signal differential voltage
RL = 600 Ω
†
1.6
A
VD
gg g
amplification
V
O
= 1 V to 2
V
RL = 1 MΩ
†
250
V/mV
r
id
Differential input resistance 10
12
Ω
r
ic
Common-mode input resistance 10
12
Ω
c
ic
Common-mode input capacitance f = 10 kHz 6 pF
z
o
Closed-loop output impedance f = 1 MHz, AV = 1 156 Ω
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 Ω 60 70 dB
Supply voltage rejection ratio
k
SVR
ygj
(∆VDD/∆VIO)
V
DD
= 2.7 V to 8 V,
V
IC
= 0,
No load96dB
I
DD
Supply current VO = 0, No load 750 µA
†
Referenced to 1.5 V
electrical characteristics at VDD = 5 V, TA = 25°C (unless otherwise noted)
TLV2231Y
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
V
IO
Input offset voltage
710 µV
I
IO
Input offset current
VDD± = ±1.5 V,
VIC = 0, VO = 0,
0.5 pA
I
IB
Input bias current
R
S
= 50
Ω
1 pA
–0.3
V
ICR
Common-mode input voltage range |VIO| ≤5 mV, RS = 50 Ω
to
V
ICR
gg
IO
S
4.2
V
OH
High-level output voltage IOH = –1 mA 4.9 V
p
VIC = 2.5 V, IOL = 500 µA 80
VOLLow-level output voltage
VIC = 2.5 V, IOL = 1 mA 160
mV
Large-signal differential voltage
RL = 600 Ω
†
15
A
VD
gg g
amplification
V
O
=
1 V to 2 V
RL = 1 MΩ
†
400
V/mV
r
id
Differential input resistance 10
12
Ω
r
ic
Common-mode input resistance 10
12
Ω
c
ic
Common-mode input capacitance f = 10 kHz 6 pF
z
o
Closed-loop output impedance f = 1 MHz, AV = 1 138 Ω
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 0, RS = 50 Ω 60 70 dB
Supply voltage rejection ratio
k
SVR
ygj
(∆VDD/∆VIO)
V
DD
=
2.7 V to 8 V
,
V
IC
=
0
,
No load96dB
I
DD
Supply current VO = 0, No load 850 µA
†
Referenced to 2.5 V
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
p
Distribution 2, 3
VIOInput offset voltage
vs Common-mode input voltage
,
4, 5
α
VIO
Input offset voltage temperature coefficient Distribution 6, 7
IIB/I
IO
Input bias and input offset currents vs Free-air temperature 8
p
vs Supply voltage 9
VIInput voltage
yg
vs Free-air temperature 10
V
OH
High-level output voltage vs High-level output current 11, 14
V
OL
Low-level output voltage vs Low-level output current 12, 13, 15
V
O(PP)
Maximum peak-to-peak output voltage vs Frequency 16
p
vs Supply voltage 17
IOSShort-circuit output current
yg
vs Free-air temperature 18
V
O
Output voltage vs Differential input voltage 19, 20
A
VD
Differential voltage amplification vs Load resistance 21
p
vs Frequency 22, 23
AVDLarge-signal differential voltage amplification
qy
vs Free-air temperature
,
24, 25
z
o
Output impedance vs Frequency 26, 27
vs Frequency 28
CMRR
Common-mode rejection ratio
qy
vs Free-air temperature 29
pp
vs Frequency 30, 31
k
SVR
Suppl
y-v
oltage rejection ratio
qy
vs Free-air temperature
,
32
I
DD
Supply current vs Supply voltage 33
vs Load capacitance 34
SR
Slew rate
vs Free-air temperature 35
V
O
Inverting large-signal pulse response vs Time 36, 37
V
O
Voltage-follower large-signal pulse response vs Time 38, 39
V
O
Inverting small-signal pulse response vs Time 40, 41
V
O
Voltage-follower small-signal pulse response vs Time 42, 43
V
n
Equivalent input noise voltage vs Frequency 44, 45
Noise voltage (referred to input) Over a 10-second period 46
THD + N Total harmonic distortion plus noise vs Frequency 47
p
vs Free-air temperature 48
Gain-bandwidth product
vs Supply voltage 49
Gain margin vs Load capacitance 50, 51
vs Frequency 22, 23
φmPhase margin
qy
vs Load capacitance
,
52, 53
B
1
Unity-gain bandwidth vs Load capacitance 54, 55
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 2
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
10
6
2
0
12
16
20
18
14
8
4
–3 –2 –1 0 1 2 3
380 Amplifiers From 1 Wafer Lot
VDD = ±1.5 V
TA = 25°C
Figure 3
Precentage of Amplifiers – %
DISTRIBUTION OF TLV2231
INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
10
6
2
0
12
16
20
18
14
8
4
–3 –2 –1 0 1 2 3
380 Amplifiers From 1 Wafer Lot
VDD = ±2.5 V
TA = 25°C
Figure 4
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE
†
vs
COMMON-MODE INPUT VOLTAGE
V
IO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
–0.8
–1
–1 0 1 2
VDD = 3 V
RS = 50 Ω
TA = 25°C
3
Figure 5
– Input Offset Voltage – mV
INPUT OFFSET VOLTAGE
†
vs
COMMON-MODE INPUT VOLTAGE
V
IO
VIC – Common-Mode Input Voltage – V
1
0.8
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
–0.8
–1
–1012345
VDD = 5 V
RS = 50 Ω
TA = 25°C
†
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
†
Percentage of Amplifiers – %
α
VIO
– Input Offset Voltage
Temperature Coefficient – µV/°C
15
10
5
0
20
25
30
–4 –3 –2 –1 0 1 2 3 4
32 Amplifiers From
1 Wafer Lots
V
DD±
= ±1.5 V
P Package
TA = 25°C to 125°C
Figure 7
DISTRIBUTION OF TLV2231 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
†
Percentage of Amplifiers – %
α
VIO
– Input Offset Voltage
Temperature Coefficient – µV/°C
15
10
5
0
20
25
30
–4 –3 –2 –1 0 1 2 3 4
32 Amplifiers From
1 Wafer Lots
V
DD±
= ±2.5 V
P Package
TA = 25°C to 125°C
Figure 8
IIB and IIO – Input Bias and Input Offset Currents – pA
INPUT BIAS AND INPUT OFFSET CURRENTS
†
vs
FREE-AIR TEMPERATURE
I
IB
I
IO
TA – Free-Air Temperature – °C
100
90
80
70
60
50
40
30
20
10
0
25 45 65 85 105 125
V
DD±
= ±2.5 V
VIC = 0
VO = 0
RS = 50 Ω
I
IB
I
IO
Figure 9
0
4
1 1.5 2 2.5
– Input Voltage – V
2
1
3
INPUT VOLTAGE
vs
SUPPLY VOLTAGE
5
3 3.5 4
–1
–2
–3
–4
–5
RS = 50 Ω
TA = 25°C
|VIO| ≤5 mV
V
I
|V
DD±
| – Supply Voltage – V
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
– Input Voltage – V
INPUT VOLTAGE
†
vs
FREE-AIR TEMPERATURE
V
I
TA – Free-Air Temperature – °C
2
1
0
3
4
5
–1
–55 –35 –15 5 25 45 65 85
|VIO| ≤5 mV
VDD = 5 V
105 125
Figure 11
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
†‡
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
|IOH| – High-Level Output Current – mA
2
1.5
1
0
0
2.5
3
VDD = 3 V
TA = –40°C
TA = 25°C
TA = 85°C
0.5
TA = 125°C
51015
Figure 12
0.6
0.4
0.2
0
0123
– Low-Level Output Voltage – V
0.8
1
LOW-LEVEL OUTPUT VOLTAGE
‡
vs
LOW-LEVEL OUTPUT CURRENT
1.2
45
V
OL
IOL – Low-Level Output Current – mA
VDD = 3 V
TA = 25°C
VIC = 0
VIC = 0.75 V
VIC = 1.5 V
Figure 13
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
†‡
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
IOL – Low-Level Output Current – mA
0.4
0.2
1.2
0
0123
0.8
0.6
1
1.4
45
T
A
= 85°C
TA = 25°C
TA = 125°C
VDD = 3 V
VIC = 1.5 V
TA = – 40°C
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 14
– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
†‡
vs
HIGH-LEVEL OUTPUT CURRENT
V
OH
|IOH| – High-Level Output Current – mA
0
VDD = 5 V
TA = –40°C
TA = 25°C
TA = 85°C
TA = 125°C
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
51015202530
Figure 15
– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
†‡
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
IOL – Low-Level Output Current – mA
0.6
0.4
0.2
0
01 2 3
1
1.2
1.4
456
0.8
VDD = 5 V
VIC = 2.5 V
TA = –40°C
TA = 85°C
TA = 25°C
TA = 125°C
Figure 16
– Maximum Peak-to-Peak Output Voltage – V
f – Frequency – Hz
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
‡
vs
FREQUENCY
ÁÁ
ÁÁ
V
O(PP)
4
2
1
5
3
0
10
2
10
3
10
4
10
6
10
5
RI = 600 Ω
TA = 25°C
VDD = 5 V
VDD = 3 V
Figure 17
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
I
OS
VDD – Supply Voltage – V
30
25
20
15
10
5
0
–5
–10
–15
–20
–25
–30
2345678
VID = –100 mV
VID = 100 mV
VO = VDD/2
VIC = VDD/2
TA = 25°C
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 18
– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
†‡
vs
FREE-AIR TEMPERATURE
I
OS
TA – Free-Air Temperature – °C
–75
30
VDD = 5 V
VIC = 2.5 V
VO = 2.5 V
VID = –100 mV
VID = 100 mV
25
20
15
5
0
–5
–10
–15
–20
–25
10
–30
–50 –25 0 25 50 75 100 125
Figure 19
OUTPUT VOLTAGE
‡
vs
DIFFERENTIAL INPUT VOLTAGE
VID – Differential Input Voltage – mV
0
10
VDD = 3 V
VIC = 1.5 V
RI = 600 Ω
TA = 25°C
86420–2–4–6–8–10
0.5
1
1.5
2
2.5
3
– Output Voltage – V
V
O
Figure 20
OUTPUT VOLTAGE
‡
vs
DIFFERENTIAL INPUT VOLTAGE
VID – Differential Input Voltage – mV
– Output Voltage – V
V
O
0
10
86420–2–4–6–8–10
1
2
3
4
5
VDD = 5 V
VIC = 2.5 V
RL = 600 Ω
TA = 25°C
Figure 21
DIFFERENTIAL VOLTAGE AMPLIFICATION
‡
vs
LOAD RESISTANCE
RL – Load Resistance – kΩ
– Differential Voltage Amplification – V/mV
A
VD
V
O(PP)
= 2 V
TA = 25°C
VDD = 5 V
VDD = 3 V
0.1 10
1
10
2
10
3
10
2
10
1
1
10
3
10
4
1
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
om – Phase Margin
φ
m
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
†
vs
FREQUENCY
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
20
80
60
40
0
–20
–40
10
4
10
5
10
6
10
7
180°
135°
90°
45°
0°
–45°
–90°
Gain
VDD = 3 V
RL = 600 Ω
CL= 100 pF
TA = 25°C
Phase Margin
Figure 22
om – Phase Margin
φ
m
f – Frequency – Hz
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
†
vs
FREQUENCY
AVD – Large-Signal Differential
A
VD
Voltage Amplification – dB
20
80
60
40
0
–20
–40
10
4
10
5
10
6
10
7
180°
135°
90°
45°
0°
–45°
–90°
VDD = 5 V
RL= 600 Ω
CL= 100 pF
TA = 25°C
Phase Margin
Gain
Figure 23
†
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 24
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage
A
VD
Amplification – V/mV
–50 –25 0 25 50 75 100
RL = 600 Ω
10
3
10
2
0.1
VDD = 3 V
VIC = 1.5 V
VO = 0.5 V to 2.5 V
–75 125
10
1
1
RL = 1 MΩ
Figure 25
LARGE-SIGNAL DIFFERENTIAL
VOLTAGE AMPLIFICATION
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
– Large-Signal Differential Voltage A
VD
Amplification – V/mV
–50 –25 0 25 50 75 100 125
10
3
10
2
0.1
–75
VDD = 5 V
VIC = 2.5 V
VO = 1 V to 4 V
RL = 1 MΩ
RL = 600 Ω
10
1
1
Figure 26
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE
‡
vs
FREQUENCY
Ω
z
o
10
1
0.1
1000
100
10
2
10
3
10
4
10
5
10
6
AV = 100
AV = 10
AV = 1
VDD = 3 V
TA = 25°C
Figure 27
– Output Impedance –
f– Frequency – Hz
OUTPUT IMPEDANCE
‡
vs
FREQUENCY
Ω
z
o
10
1
0.1
1000
100
10
2
10
3
10
4
10
5
10
6
AV = 100
AV = 10
AV = 1
VDD = 5 V
TA = 25°C
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
18
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 28
CMRR – Common-Mode Rejection Ratio – dB
f – Frequency – Hz
COMMON-MODE REJECTION RATIO
†
vs
FREQUENCY
80
40
20
0
100
60
10
2
10
3
10
4
10
5
10
6
VDD = 3 V
VIC = 1.5 V
10
7
VDD = 5 V
VIC = 2.5 V
TA = 25°C
Figure 29
CMMR – Common-Mode Rejection Ratio – dB
COMMON-MODE REJECTION RATIO
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
76
72
70
82
74
80
78
84
– 50 – 25 0 25 50 75 100– 75 125
VDD = 5 V
VDD = 3 V
Figure 30
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO
†
vs
FREQUENCY
k
SVR
60
40
20
100
80
0
10
2
10
3
10
4
10
5
10
6
10
7
VDD = 3 V
TA = 25°C
k
SVR+
k
SVR–
Figure 31
– Supply-Voltage Rejection Ratio – dB
f – Frequency – Hz
SUPPLY-VOLTAGE REJECTION RATIO
†
vs
FREQUENCY
k
SVR
100
80
60
40
20
0
10
2
10
3
10
4
10
5
10
6
k
SVR–
10
7
VDD = 5 V
TA = 25°C
k
SVR+
‡
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
†
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 32
– Supply-Voltage Rejection Ratio – dB
SUPPLY-VOLTAGE REJECTION RATIO
†
vs
FREE-AIR TEMPERATURE
k
SVR
TA – Free-Air Temperature – °C
100
98
96
94
92
90
–50 –25 0 25 50 75 100 125–75
VDD = 2.7 V to 8 V
VIC = VO = VDD /2
Figure 33
– Supply Current –
Aµ
I
DD
VDD – Supply Voltage – V
SUPPLY CURRENT
†
vs
SUPPLY VOLTAGE
TA = 25°C
TA = 85°C
VO = 0
No Load
1000
750
500
250
0
012345678
T
A
= –40°C
Figure 34
SR – Slew Rate –
SLEW RATE
‡
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
sµ
V/
10
1
10
2
10
3
10
4
10
5
VDD = 5 V
AV = –1
TA = 25°C
SR–
SR+
3.5
3
2.5
2
1.5
1
0.5
0
Figure 35
SR – Slew Rate –
SLEW RATE
†‡
vs
FREE-AIR TEMPERATURE
sµ
V/
TA – Free-Air Temperature – °C
–50 –25 0 25 50 75 100–75 125
4
3
2
1
0
SR–
SR+
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = 1
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
20
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 36
– Output Voltage – V
INVERTING LARGE-SIGNAL PULSE
RESPONSE
†
V
O
t – Time – µs
1.5
1
0.5
0
0
2
2.5
3
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
AV = –1
TA = 25°C
VDD = 3 V
RL = 600 Ω
CL = 100 pF
Figure 37
INVERTING LARGE-SIGNAL PULSE
RESPONSE
†
t – Time – µs
– Output Voltage – V
V
O
5
0
4
3
2
1
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
AV = –1
TA = 25°C
VDD = 5 V
RL = 600 Ω
CL = 100 pF
Figure 38
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
†
– Output Voltage – V
V
O
t – Time – µs
1.5
1
0.5
0
0123456
2
2.5
3
78910
A
V
= 1
TA = 25°C
VDD = 3 V
RL = 600 Ω
CL = 100 pF
Figure 39
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
†
– Output Voltage – V
V
O
t – Time – µs
2
1
0
01 23456
3
4
5
78910
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = 1
TA = 25°C
†
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 40
INVERTING SMALL-SIGNAL
PULSE RESPONSE
†
– Output Voltage – V
V
O
t – Time – µs
0
1.56
1.54
1.52
1.5
1.48
1.46
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDD = 3 V
RL = 600 Ω
CL = 100 pF
AV = –1
TA = 25°C
Figure 41
VO – Output Voltage – V
INVERTING SMALL-SIGNAL
PULSE RESPONSE
†
V
O
t – Time – µs
2.5
2.48
2.46
0
2.52
2.54
2.56
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = –1
TA = 25°C
Figure 42
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
†
VO – Output Voltage – V
V
O
t – Time – µs
0
1.56
1.54
1.52
1.5
1.481.48
1.48
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.50
VDD = 3 V
RL = 600 Ω
CL = 100 pF
AV = 1
TA = 25°C
Figure 43
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
†
VO – Output Voltage – V
V
O
t – Time – µs
0
2.56
2.54
2.52
2.5
2.48
2.46
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5
VDD = 5 V
RL = 600 Ω
CL = 100 pF
AV = 1
TA = 25°C
†
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
22
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 44
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE
†
vs
FREQUENCY
V
n
nV/
Hz
80
60
40
0
120
100
20
10
1
10
2
10
3
10
4
VDD = 3 V
RS = 20 Ω
TA = 25°C
Figure 45
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE
†
vs
FREQUENCY
V
n
nV/ Hz
80
40
20
0
120
60
100
10
1
10
2
10
3
10
4
VDD = 5 V
RS = 20 Ω
TA = 25°C
Figure 46
Noise Voltage – nV
t – Time – s
INPUT NOISE VOLTAGE OVER
A 10-SECOND PERIOD
†
0246
0
750
1000
810
500
–250
–500
–750
–1000
250
VDD = 5 V
f = 0.1 Hz to 10 Hz
TA = 25°C
Figure 47
THD + N – Total Harmonic Distortion Plus Noise – %
f – Frequency – Hz
TOTAL HARMONIC DISTORTION PLUS NOISE
†
vs
FREQUENCY
0.1
10
0.01
10
1
10
2
10
3
10
4
10
5
1
AV = 100
AV = 10
AV = 1
AV = 100
AV = 10
AV = 1
VDD = 5 V
TA = 25°C
RL = 600 Ω to 2.5 V
RL = 600 Ω to 0 V
†
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
23
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 48
Gain-Bandwidth Product – kHz
GAIN-BANDWIDTH PRODUCT
†‡
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
4
–50 –25 0 25 50 10075 125–75
3.5
3
2.5
2
1.5
1
VDD = 5 V
f = 10 kHz
RL = 600 Ω
CL = 100 pF
Figure 49
Gain-Bandwidth Product – kHz
GAIN-BANDWIDTH PRODUCT
‡
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
0235
2.5
78146
2.25
2
1.75
1.5
RL = 600 Ω
CL = 100 pF
TA = 25°C
Figure 50
Gain Margin – dB
GAIN MARGIN
‡
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
20
10
5
0
15
10
1
10
2
10
3
10
5
10
4
R
null
= 0
R
null
= 50 Ω
R
null
= 100 Ω
R
null
= 500 Ω
R
null
= 1000 Ω
TA = 25°
RL =
∞
Figure 51
Gain Margin – dB
GAIN MARGIN
‡
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
20
10
1
10
2
10
3
10
5
10
4
R
null
= 50 Ω
R
null
= 100 Ω
TA = 25°
RL =
600 Ω
R
null
= 0
R
null
= 500 Ω
15
10
5
0
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
‡
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
24
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 52
om – Phase Margin
PHASE MARGIN
†
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
m
φ
10
1
10
2
10
3
10
5
75°
60°
45°
30°
15°
0°
R
null
= 50 Ω
R
null
= 100 Ω
R
null
= 500 Ω
R
null
= 1000 Ω
TA = 25°C
RL =
∞
10
4
R
null
= 0
Figure 53
R
null
= 50 Ω
R
null
= 100 Ω
R
null
= 0 Ω
R
null
= 500 Ω
TA = 25°C
RL = 600 Ω
PHASE MARGIN
†
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
10
1
10
2
10
3
10
4
10
5
75°
60°
45°
30°
15°
0°
om – Phase Margin
m
φ
Figure 54
TA = 25°C
RL =
∞
– Unity-Gain Bandwidth – kHz
UNITY-GAIN BANDWIDTH
†
vs
LOAD CAPACITANCE
B
1
10
10
5
10
3
10
4
CL – Load Capacitance – pF
1
0.1
10
2
Figure 55
TA = 25°C
RL = 600 Ω
– Unity-Gain Bandwidth – kHz
UNITY-GAIN BANDWIDTH
†
vs
LOAD CAPACITANCE
B
1
10
10
5
10
3
10
4
CL – Load Capacitance – pF
1
0.1
10
2
†
For all curves where VDD = 5 V, all loads are referenced to 2.5 V. For all curves where VDD = 3 V, all loads are referenced to 1.5 V.
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
25
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
driving large capacitive loads
The TLV2231 is designed to drive larger capacitive loads than most CMOS operational amplifiers. Figure 50
through Figure 55 illustrate its ability to drive loads greater than 100 pF while maintaining good gain and phase
margins (R
null
= 0).
A small series resistor (R
null
) at the output of the device (see Figure 56) improves the gain and phase margins
when driving large capacitive loads. Figure 50 through Figure 53 show the effects of adding series resistances
of 50 Ω, 100 Ω, 500 Ω, and 1000 Ω. The addition of this series resistor has two effects: the first effect is that
it adds a zero to the transfer function and the second effect is that it reduces the frequency of the pole associated
with the output load in the transfer function.
The zero introduced to the transfer function is equal to the series resistance times the load capacitance. To
calculate the approximate improvement in phase margin, equation 1 can be used.
∆φ
m1
+
tan
–1
ǒ
2 × π × UGBW × R
null
× C
L
Ǔ
∆φm1+
improvement in phase margin
UGBW
+
unity-gain bandwidth frequency
R
null
+
output series resistance
C
L
+
load capacitance
(1)
where :
The unity-gain bandwidth (UGBW) frequency decreases as the capacitive load increases (see Figure 54 and
Figure 55). To use equation 1, UGBW must be approximated from Figure 54 and Figure 55.
V
DD–
/GND
V
DD+
R
null
C
L
V
I
+
–
R
L
Figure 56. Series-Resistance Circuit
TLV2231, TLV2231Y
Advanced LinCMOS RAIL-TO-RAIL
LOW-POWER SINGLE OPERATIONAL AMPLIFIERS
SLOS158C – JUNE 1996 – REVISED SEPTEMBER 1997
26
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
macromodel information
Macromodel information provided was derived using Microsim
Parts
, the model generation software used
with Microsim
PSpice
. The Boyle macromodel (see Note 6) and subcircuit in Figure 57 are generated using
the TLV2231 typical electrical and operating characteristics at T
A
= 25°C. Using this information, output
simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D
Maximum positive output voltage swing
D
Maximum negative output voltage swing
D
Slew rate
D
Quiescent power dissipation
D
Input bias current
D
Open-loop voltage amplification
D
Unity-gain frequency
D
Common-mode rejection ratio
D
Phase margin
D
DC output resistance
D
AC output resistance
D
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers,”
IEEE Journal
of Solid-State Circuits,
SC-9, 353 (1974).
OUT
+
–
+
–
+
–
+
–
+
–
+
–
+
–
+
–
+–
.SUBCKT TLV2231 1 2 3 4 5
C1 11 12 13.51E–12
C2 6 7 50.00E–12
DC 5 53 DX
DE 54 5 DX
DLP 90 91 DX
DLN 92 90 DX
DP 43DX
EGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5
FB 7 99 POLY (5) VB VC VE VLP
+ VLN 0 90.83E3 –10E3 10E3 10E3 –10E3
GA 6 0 11 12 314.2E–6
GCM 0 6 10 99 242.35E–9
ISS 3 10 DC 87.00E–6
HLIM 90 0 VLIM 1K
J1 11 2 10 JX
J2 12 1 10 JX
R2 6 9 100.0E3
RD1 60 11 3.183E3
RD2 60 12 3.183E3
R01 8 5 25
R02 7 99 25
RP 3 4 6.553E3
RSS 10 99 2.500E6
VAD 60 4 –.5
VB 9 0 DC 0
VC 3 53 DC .795
VE 54 4 DC .795
VLIM 7 8 DC 0
VLP 91 0 DC 12.4
VLN 0 92 DC 17.4
.MODEL DX D (IS=800.0E–18)
.MODEL JX PJF (IS=500.0E–15 BETA=2.939E–3
+ VTO=–.065)
.ENDS
V
DD+
RP
IN –
2
IN+
1
V
DD–
VAD
RD1
11
J1 J2
10
RSS ISS
3
12
RD2
60
VE
54
DE
DP
VC
DC
4
C1
53
R2
6
9
EGND
VB
FB
C2
GCM
GA
VLIM
8
5
RO1
RO2
HLIM
90
DLP
91
DLN
92
VLNVLP
99
7
Figure 57. Boyle Macromodel and Subcircuit
PSpice
and
Parts
are trademark of MicroSim Corporation.
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
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BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
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Copyright 1998, Texas Instruments Incorporated
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