Texas Instruments TLV2211IDBVR, TLV2211IDBVT, TLV2211CDBVT, TLV2211CDBVR Datasheet
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Output Swing Includes Both Supply Rails
D
Low Noise...21 nV/√Hz Typ at f = 1 kHz
D
Low Input Bias Current...1 pA Typ
D
Very Low Power...13 µA Per Channel Typ
D
Common-Mode Input Voltage Range
Includes Negative Rail
D
Wide Supply Voltage Range
2.7 V to 10 V
D
Available in the SOT-23 Package
D
Macromodel Included
description
The TL V2211 is a single operational amplifier manufactured using the T exas Instruments Advanced LinCMOS
process. These devices are optimized and fully specified for single-supply 3-V and 5-V operation. For this
low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has
been dramatically improved using optimized design techniques for CMOS-type amplifiers. Another added
benefit is that these amplifiers exhibit rail-to-rail output swing. The output dynamic range can be extended using
the TL V221 1 with loads referenced midway between the rails. The common-mode input voltage range is wider
than typical standard CMOS-type amplifiers. To take advantage of this improvement in performance and to
make this device available for a wider range of applications, V
ICR
is specified with a larger maximum input offset
voltage test limit of ± 5 mV , allowing a minimum of 0 to 2-V common-mode input voltage range for a 3-V power
supply .
AVAILABLE OPTIONS
°
PACKAGED DEVICES
CHIP FORM
T
A
VIOmax AT 25°C
SOT-23 (DBV)
†
SYMBOL
(Y)
0°C to 70°C 3 mV TLV2211CDBV VACC
–40°C to 85°C 3 mV TLV2211IDBV VACI
TLV2211Y
†
The DBV package available in tape and reel only.
The Advanced LinCMOS process uses a silicon-gate technology to obtain input offset voltage stability with
temperature and time that far exceeds that obtainable using metal-gate technology . This technology also makes
possible input-impedance levels that meet or exceed levels offered by top-gate JFET and expensive
dielectric-isolated devices.
The TLV2211, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for
high-impedance sources such as piezoelectric transducers. Because of the low power dissipation levels
combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing
applications. In addition, the rail-to-rail output feature with single or split supplies makes these devices excellent
choices when interfacing directly to analog-to-digital converters (ADCs). All of these features combined with its
temperature performance make the TLV2211 ideal for remote pressure sensors, temperature control, active
voltage-resistive (VR) sensors, accelerometers, hand-held metering, and many other applications.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DBV PACKAGE
(TOP VIEW)
5
43
1
2
IN–
V
DD–
/GND
IN+ V
DD+
OUT
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1997, Texas Instruments Incorporated
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued)
The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under
MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may
result in degradation of the device parametric performance. Additional care should be exercised to prevent
V
DD +
supply-line transients under powered conditions. Transients of greater than 20 V can trigger the
ESD-protection structure, inducing a low-impedance path to V
DD –
/GND. Should this condition occur, the
sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a
latched condition and device failure.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2211Y chip information
This chip, when properly assembled, displays characteristics similar to the TLV2211C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–
OUT
IN+
IN–
V
DD+
(5)
(1)
(3)
(4)
(2)
V
DD–
/GND
40
(3)
(2)
(1)
(5)
(4)
32
TLV2211, TLV2211Y
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
Template Release Date: 7–11–94
Advanced LinCMOSRAIL-TO-RAIL
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
•
equivalent schematic
Q3 Q6 Q9 Q12 Q14 Q16
Q2 Q5 Q7 Q8 Q10 Q11
D1
Q17Q15Q13
Q4Q1
R5
C1
V
DD+
IN+
IN–
R3
R7
R1
R2
OUT
V
DD–/ GND
COMPONENT COUNT
†
Transistors
Diodes
Resistors
Capacitors
23
6
11
2
†
Includes both amplifiers and all
ESD, bias, and trim circuitry
R6
C2
D2
R4
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input, see Note 1) –0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
(each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into V
DD+
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of V
DD–
±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current (at or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
: TLV2211C 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TLV2211I –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150° C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package 260°C. . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to V
DD –
.
2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought
below V
DD–
– 0.3 V.
3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
T
≤ 25°C DERATING FACTOR T
= 70°C T
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°CAPOWER RATINGAPOWER RATING
DBV 150 mW 1.2 mW/°C 96 mW 78 mW
recommended operating conditions
TLV2211C TLV2211I
MIN MAX MIN MAX
UNIT
Supply voltage, VDD(see Note 1)
2.7 10 2.7 10 V
Input voltage range, V
I
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Common-mode input voltage, V
IC
V
DD–VDD+
–1.3 V
DD–VDD+
–1.3 V
Operating free-air temperature, T
A
0 70 –40 85 °C
NOTE 1: All voltage values, except differential voltages, are with respect to V
DD –
.
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.47 3 0.47 3000 mV
Temperature
p
Full range
°
α
VIO
coe
fficient of i
npu
t
offset voltage
1
1µV/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD±
= ±1.5 V,
VO = 0,
V
IC
= 0,
RS = 50 Ω
25°C 0.003 0.003 µV/mo
I
IO
Input offset current Full range 0.5 150 0.5 150 pA
I
IB
Input bias current Full range 1 150 1 150 pA
0 –0.3 0 –0.3
25°C
0to0.3to0to0.3
to
Common-mode input
2 2.2 2 2.2
V
ICR
voltage range
|V
IO
| ≤5 mV,
R
S
= 50
Ω
0 0
V
Full range
0to0
to
g
1.7 1.7
IOH = –100 µA 25°C 2.94 2.94
V
OH
High-level output
25°C 2.85 2.85
V
voltage
I
OH
= –
250 µA
Full range 2.5 2.5
VIC = 1.5 V, IOL = 50 µA 25°C 15 15
V
OL
Low-level output
25°C 150 150
mV
voltage
V
IC
= 1.5 V,
I
OL
=
500 µA
Full range 500 500
-
25°C 3 7 3 7
A
VD
Large signal
differential voltage
VIC = 1.5 V,
R
L
= 10
kΩ
‡
Full range 1 1
V/mV
VD
amplification
V
O
= 1 V to 2
V
RL = 1 MΩ
‡
25°C 600 600
r
i(d)
Differential input
resistance
25°C 10
12
10
12
Ω
r
i(c)
Common-mode
input resistance
25°C 10
12
10
12
Ω
c
i(c)
Common-mode
input capacitance
f = 10 kHz, 25°C 5 5 pF
z
o
Closed-loop
output impedance
f = 7 kHz, AV = 1 25°C 200 200
Ω
Common-mode V
= 0 to 1.7 V,
V
= 1.5 V,
25°C 65 83 65 83
CMRR
rejection ratio
IC
,
RS = 50 Ω
O
,
Full range 60 60
dB
Supply voltage
V
= 2.7 V to 8 V, V
= V
/2
25°C 80 95 80 95
k
SVR
rejection ratio
(∆VDD /∆VIO)
DD
,
No load
IC DD
,
Full range
80 80
dB
pp
25°C 11 25 11 25
IDDSupply current
V
O
= 1.5 V,
No load
Full range 30 30
µ
A
†
Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV221 1I is – 40 °C to 85°C.
‡
Referenced to 1.5 V
NOTE 4: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
25°C
0.01
0.025
0.01
0.025
SR Slew rate at unity gain
V
O
=
1.1 V to 1.9 V
,
=
p
‡
R
L
=
10 kΩ
‡
,
Full
V/µs
C
L
=
100 F
‡
range
0.005
0.005
Equivalent input noise
f = 10 Hz 25°C 80 80
V
n
q
voltage
f = 1 kHz
25°C 22 22
n
V/√H
z
Peak-to-peak equivalent
f = 0.1 Hz to 1 Hz 25°C 660 660
V
N(PP)
q
input noise voltage
f = 0.1 Hz to 10 Hz
25°C 880 880
µ
V
I
n
Equivalent input noise
current
25°C 0.6 0.6
fA/√Hz
p
f = 10 kHz, R
= 10 kΩ
‡
,
°
Gain-bandwidth product
f 10 kHz,
CL = 100 pF
‡
R
L
10
kΩ,
25°C5656
kH
z
Maximum output-swing V
= 1 V, A
= 1,
°
B
OM
g
bandwidth
O(PP)
,
RL = 10 kه,
V
,
CL = 100 pF
‡
25°C77
kH
z
φ
m
Phase margin at
unity gain
R
= 10 kه, C
= 100 pF
‡
25°C 56° 56°
Gain margin
L,L
25°C 20 20 dB
†
Full range is –40°C to 85°C.
‡
Referenced to 1.5 V
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.45 3 0.45 3 mV
Temperature
p
Full range
°
α
VIO
coefficient of in ut
offset voltage
0.5
0.5µV/°C
Input offset voltage
long-term drift
(see Note 4)
V
DD±
= ±2.5 V,
VO = 0,
V
IC
= 0,
RS = 50 Ω
25°C
0.003 0.003 µV/mo
p
25°C 0.5 0.5
p
IIOInput offset current
Full range 150 150
pA
p
25°C 1 1
p
IIBInput bias current
Full range 150 150
pA
0 –0.3 0 –0.3
25°C
to to to to
Common-mode input
4 4.2 4 4.2
V
ICR
voltage range
|V
IO
| ≤5
mV
R
S
= 50
Ω
0 0
V
Full range
to to
g
3.5 3.5
IOH = –100 µA 25°C 4.95 4.95
V
OH
High-l
evel outpu
t
25°C 4.875 4.875
V
voltage
I
OH
= –
250 µA
Full range 4.5 4.5
VIC = 2.5 V, IOL = 50 µA 25°C 12 12
V
OL
L
ow-level outpu
t
25°C 120 120
mV
voltage
V
IC
=
2.5 V
,
I
OL
=
500 µA
Full range 500 500
-
25°C 6 12 6 12
A
VD
Large signal
differential
VIC = 2.5 V,
R
L
= 10
kΩ
‡
Full range 3 3
V/mV
voltage amplification
V
O
= 1 V to 4
V
RL = 1 MΩ
‡
25°C 800 800
r
i(d)
Differential input
resistance
25°C 10
12
10
12
Ω
r
i(c)
Common-mode
input resistance
25°C 10
12
10
12
Ω
c
i(c)
Common-mode
input capacitance
f = 10 kHz, 25°C 5 5 pF
z
o
Closed-loop
output impedance
f = 7 kHz, AV = 1 25°C 200 200
Ω
Common-mode VIC = 0 to 2.7 V,
V
O
= 2.5 V,
25°C 70 83 70 83
CMRR
rejection ratio
IC
RS = 50 Ω
O
Full range 70 70
dB
Supply voltage
VDD = 4.4 V to 8 V, VIC = VDD/2,
25°C 80 95 80 95
k
SVR
rejection ratio
(∆VDD /∆VIO)
DD
No load
IC DD
Full range 80 80
dB
pp
25°C 13 25 13 25
IDDSupply current
V
O
= 2.5 V,
No load
Full range 30 30
µ
A
†
Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV221 1I is – 40 °C to 85°C.
‡
Referenced to 1.5 V
NOTE 5: T ypical values are based on the input offset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV .
TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUAR Y 1997
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
TLV2211C TLV2211I
PARAMETER
TEST CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
25°C
0.01
0.025
0.01
0.025
SR Slew rate at unity gain
V
O
=
1.5 V to 3.5 V
,
=
p
‡
R
L
=
10 kΩ
‡
,
Full
V/µs
C
L
=
100 F
‡
range
0.005
0.005
Equivalent input noise
f = 10 Hz 25°C 72 72
V
n
q
voltage
f = 1 kHz
25°C 21 21
n
V/√H
z
Peak-to-peak equivalent
f = 0.1 Hz to 1 Hz 25°C 600 600
V
N(PP)
q
input noise voltage
f = 0.1 Hz to 10 Hz
25°C 800 800
µ
V
I
n
Equivalent input noise
current
25°C 0.6 0.6
fA/√Hz
p
f = 10 kHz, R
= 10 kΩ
‡
,
°
Gain-bandwidth product
f 10 kHz,
CL = 100 pF
‡
R
L
10
kΩ,
25°C6565
kH
z
Maximum output-swing V
= 2 V, A
= 1,
°
B
OM
g
bandwidth
O(PP)
,
RL = 10 kه,
V
,
CL = 100 pF
‡
25°C77
kH
z
φ
m
Phase margin at
unity gain
R
= 10 kه, C
= 100 pF
‡
25°C 56° 56°
Gain margin
L,L
25°C 22 22 dB
†
Full range is –40°C to 85°C.
‡
Referenced to 1.5 V
electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)
TLV2211Y
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT
V
IO
Input offset voltage
0.47 mV
I
IO
Input offset current
V
DD±
= ±1.5 V ,
VO = 0, VIC = 0,
0.5 pA
I
IB
Input bias current
R
S
= 50
Ω
1 pA
–0.3
V
ICR
Common-mode input voltage range | VIO | ≤5 mV , RS = 50 Ω
to
V
ICR
gg
IO
S
2.2
p
IOH = –100 µA 2.94
VOHHigh-level output voltage
IOH = –200 µA 2.85
V
p
VIC = 0, IOL = 50 µA 15
VOLLow-level output voltage
VIC = 0, IOL = 500 µA 150
mV
Large-signal differential
RL = 10 kΩ
†
7
A
VD
gg
voltage amplification
V
IC
= 1.5 V,
V
O
= 1 V to 2
V
RL = 1 MΩ
†
600
V/mV
r
i(d)
Differential input resistance 10
12
Ω
r
i(c)
Common-mode input resistance 10
12
Ω
c
i(c)
Common-mode input capacitance f = 10 kHz 5 pF
z
o
Closed-loop output impedance f = 7 kHz, AV = 1 200 Ω
CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 1.5 V, RS = 50 Ω 83 dB
Supply voltage rejection ratio
k
SVR
ygj
(∆VDD/∆VIO)
V
DD
= 2.7 V to 8 V,
V
IC
=
VDD/2
,
No load95dB
I
DD
Supply current VO = 1.5 V, No load 11 µA
†
Referenced to 1.5 V
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