TEXAS INSTRUMENTS TLV2211, TLV2211Y Technical data

T

VIOmax AT 25°C

SYMBOL

TLV2211Y

TLV2211, TLV2211Y

Advanced LinCMOS RAIL-TO-RAIL

MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

D

Output Swing Includes Both Supply Rails

D

Low Noise...21 nV/√Hz Typ at f = 1 kHz

D

Low Input Bias Current...1 pA Typ

D

Very Low Power...13 µA Per Channel Typ

D

Common-Mode Input Voltage Range

V

DD–

DBV PACKAGE

(TOP VIEW)

IN+ V

/GND

1

5

2

DD+

Includes Negative Rail

D

Wide Supply Voltage Range

IN–

OUT

43

2.7 V to 10 V

D

Available in the SOT-23 Package

D

Macromodel Included

description

The TL V2211 is a single operational amplifier manufactured using the T exas Instruments Advanced LinCMOS
process. These devices are optimized and fully specified for single-supply 3-V and 5-V operation. For this
low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has
been dramatically improved using optimized design techniques for CMOS-type amplifiers. Another added
benefit is that these amplifiers exhibit rail-to-rail output swing. The output dynamic range can be extended using
the TL V221 1 with loads referenced midway between the rails. The common-mode input voltage range is wider
than typical standard CMOS-type amplifiers. To take advantage of this improvement in performance and to
make this device available for a wider range of applications, V
voltage test limit of ± 5 mV , allowing a minimum of 0 to 2-V common-mode input voltage range for a 3-V power
supply .

is specified with a larger maximum input offset

ICR

AVAILABLE OPTIONS

PACKAGED DEVICES

A

0°C to 70°C 3 mV TLV2211CDBV VACC

–40°C to 85°C 3 mV TLV2211IDBV VACI

†

The DBV package available in tape and reel only.

°

SOT-23 (DBV)

†

CHIP FORM

(Y)

The Advanced LinCMOS process uses a silicon-gate technology to obtain input offset voltage stability with
temperature and time that far exceeds that obtainable using metal-gate technology . This technology also makes
possible input-impedance levels that meet or exceed levels offered by top-gate JFET and expensive
dielectric-isolated devices.

The TLV2211, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for
high-impedance sources such as piezoelectric transducers. Because of the low power dissipation levels
combined with 3-V operation, these devices work well in hand-held monitoring and remote-sensing
applications. In addition, the rail-to-rail output feature with single or split supplies makes these devices excellent
choices when interfacing directly to analog-to-digital converters (ADCs). All of these features combined with its
temperature performance make the TLV2211 ideal for remote pressure sensors, temperature control, active
voltage-resistive (VR) sensors, accelerometers, hand-held metering, and many other applications.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Copyright  1997, Texas Instruments Incorporated

1

TLV2211, TLV2211Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

description (continued)

The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under
MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may
result in degradation of the device parametric performance. Additional care should be exercised to prevent
V

supply-line transients under powered conditions. Transients of greater than 20 V can trigger the

DD +

ESD-protection structure, inducing a low-impedance path to V
sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a
latched condition and device failure.

/GND. Should this condition occur, the

DD –

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2211, TLV2211Y

Advanced LinCMOS RAIL-TO-RAIL

MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

TLV2211Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2211C. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. This chip may be mounted with
conductive epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

40

(2)

(1)

(3)

(5)

(4)

V

DD+

V

+

–

DD–

(5)

(2)
/GND

(4)

OUT

(1)

IN+

(3)

IN–

CHIP THICKNESS: 10 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (2) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

32

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

3

T
l

R
l

D

7
11

94

4

POST OFFICE BOX 655303 DALLAS, TEXAS 75265

equivalent schematic

IN+

V

DD+

Q3 Q6 Q9 Q12 Q14 Q16

R7

C2

R6

C1

OUT

TLV2211, TLV2211Y

MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUARY 1997

Advanced LinCMOSRAIL-TO-RAIL

emp
ate

e
ease

ate:

–
–

IN–

Q4Q1

•

Q2 Q5 Q7 Q8 Q10 Q11

R3

R4

COMPONENT COUNT

Transistors
Diodes
Resistors
Capacitors

†

Includes both amplifiers and all
ESD, bias, and trim circuitry

23
6
11
2

†

R5

V

DD–/GND

R1

R2

Q17Q15Q13

D1

D2

PACKAGE

A

UNIT

TLV2211, TLV2211Y

Advanced LinCMOS RAIL-TO-RAIL

MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, V
Differential input voltage, V
Input voltage range, V
Input current, I
Output current, I
Total current into V
Total current out of V

Duration of short-circuit current (at or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T
Storage temperature range, T

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DBV package 260°C. . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to V

2. Differential voltages are at the noninverting input with respect to the inverting input. Excessive current flows when input is brought
below V

3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum

DD–

dissipation rating is not exceeded.

DBV 150 mW 1.2 mW/°C 96 mW 78 mW

(see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DD

I

(each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I

±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

O

DD+

DD–

(see Note 2) ±V

ID

(any input, see Note 1) –0.3 V to V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

: TLV2211C 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

TLV2211I –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

.

DD –

– 0.3 V.

DISSIPATION RATING T ABLE

T

≤ 25°C DERATING FACTOR T

POWER RATING ABOVE TA = 25°CAPOWER RATINGAPOWER RATING

= 70°C T

= 85°C

†

DD
DD

recommended operating conditions

Supply voltage, VDD(see Note 1)
Input voltage range, V
Common-mode input voltage, V
Operating free-air temperature, T

NOTE 1: All voltage values, except differential voltages, are with respect to V

I

IC

A

DD –

TLV2211C TLV2211I

MIN MAX MIN MAX

2.7 10 2.7 10 V

V

DD–VDD+

V

DD–VDD+

0 70 –40 85 °C

.

–1.3 V
–1.3 V

DD–VDD+
DD–VDD+

–1.3 V
–1.3 V

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

5

TLV2211, TLV2211Y

PARAMETER

TEST CONDITIONS

T

†

UNIT

fficient of i

t

1

1µV/°C

V

V

0to0.3to0to0.3

V

|V

R

Ω

V

0to0

g

voltage

I

250 µA

voltage

V

I

500 µA

Large signal

R

kΩ

‡

VD

V

O

V

V

CMRR

IC

,

O

,

dB

k

DD

,

IC DD

dB

IDDSupply current

V

No load

A

Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)

A

V

α

I
I

V

V

A

r

r

c

z

†
‡

NOTE 4: T ypical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated

Input offset voltage

IO

Temperature
coe

VIO

offset voltage
Input offset voltage

long-term drift
(see Note 4)

Input offset current Full range 0.5 150 0.5 150 pA

IO

Input bias current Full range 1 150 1 150 pA

IB

Common-mode input

ICR

voltage range

High-level output

OH

Low-level output

OL

-

differential voltage

VD

amplification
Differential input

i(d)

resistance
Common-mode

i(c)

input resistance
Common-mode

i(c)

input capacitance
Closed-loop

o

output impedance
Common-mode V

rejection ratio
Supply voltage

rejection ratio

SVR

(∆VDD /∆VIO)

pp

Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV221 1I is – 40 °C to 85° C.
Referenced to 1.5 V

to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

p

npu

= ±1.5 V,

DD±

VO = 0,

| ≤5 mV,

IO

IOH = –100 µA 25°C 2.94 2.94

= –

OH

VIC = 1.5 V, IOL = 50 µA 25°C 15 15

= 1.5 V,

IC

VIC = 1.5 V,

= 1 V to 2

f = 10 kHz, 25°C 5 5 pF

f = 7 kHz, AV = 1 25°C 200 200

= 0 to 1.7 V,

RS = 50 Ω

V

= 2.7 V to 8 V, V

No load

= 1.5 V,

O

= 0,

IC

RS = 50 Ω

= 50

S

=

OL

= 10

L

RL = 1 MΩ

= 1.5 V,

= V

,

Full range

25°C 0.003 0.003 µV/mo

25°C

Full range

25°C 2.85 2.85

Full range 2.5 2.5

25°C 150 150

Full range 500 500

25°C 3 7 3 7

Full range 1 1

‡

25°C 600 600
25°C 10

25°C 10

25°C 65 83 65 83

Full range 60 60

25°C 80 95 80 95

/2

Full range

25°C 11 25 11 25

Full range 30 30

TLV2211C TLV2211I

MIN TYP MAX MIN TYP MAX

0.47 3 0.47 3000 mV

0 –0.3 0 –0.3

2 2.2 2 2.2
0 0

1.7 1.7

12

12

80 80

to

to

12

10

12

10

°

V

mV

V/mV

Ω

Ω

Ω

µ

6

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER

TEST CONDITIONS

T

†

UNIT

25°C

0.01

0.025

0.01

0.025

V

1.1 V to 1.9 V

R

10 kΩ

‡

C

L

100 F

‡

0.005

0.005

V

q

V/√H

V

q

V

‡

,

Gain-bandwidth product

f 10 kHz,

R

L

kΩ,

25°C5656

kH

B

g

O(PP)

,

V

,

25°C77

kH

‡

L,L

TLV2211, TLV2211Y

Advanced LinCMOS RAIL-TO-RAIL

MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

operating characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)

A

TLV2211C TLV2211I

MIN TYP MAX MIN TYP MAX

SR Slew rate at unity gain

Equivalent input noise

n

voltage
Peak-to-peak equivalent

N(PP)

input noise voltage

I

n

φ

m

†

Full range is –40°C to 85°C.

‡

Referenced to 1.5 V

Equivalent input noise
current

Maximum output-swing V

OM

bandwidth
Phase margin at

unity gain
Gain margin

p

=

O

=

=

p

f = 10 Hz 25°C 80 80
f = 1 kHz
f = 0.1 Hz to 1 Hz 25°C 660 660
f = 0.1 Hz to 10 Hz

f = 10 kHz, R
CL = 100 pF

= 1 V, A

RL = 10 kه,

R

= 10 kه, C

,

=

‡

‡

L

= 10 kΩ

10

= 1,

CL = 100 pF

= 100 pF

,

Full

range

25°C 22 22

25°C 880 880
25°C 0.6 0.6

°

°

‡

25°C 56° 56°
25°C 20 20 dB

V/µs

n

µ

fA/√Hz

z

z

z

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

7

TLV2211, TLV2211Y

PARAMETER

TEST CONDITIONS

T

†

UNIT

coefficient of in ut

0.5

0.5µV/°C

V

V
IIOInput offset current

pA

IIBInput bias current

pA

V

|V

mV

R

Ω

V

g

High-l

t

voltage

I

250 µA

L

t

voltage

V

2.5 V

I

500 µA

Large signal

R

kΩ

‡

V

O

V

V

CMRR

IC

O

dB

k

rejection ratio

DD

IC DD

dB

IDDSupply current

V

No load

A

Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)

A

V

α

V

V

A

r

r

c

z

†
‡

NOTE 5: T ypical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated

Input offset voltage

IO

Temperature

VIO

offset voltage
Input offset voltage

long-term drift
(see Note 4)

p

p

Common-mode input

ICR

voltage range

OH

OL

VD

i(d)

i(c)

i(c)

o

SVR

Full range for the TLV2211C is 0°C to 70°C. Full range for the TLV221 1I is – 40 °C to 85° C.
Referenced to 1.5 V

evel outpu

ow-level outpu

­differential
voltage amplification

Differential input
resistance

Common-mode
input resistance

Common-mode
input capacitance

Closed-loop
output impedance

Common-mode VIC = 0 to 2.7 V,
rejection ratio

Supply voltage

(∆VDD /∆VIO)

pp

to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

p

= ±2.5 V,

DD±

VO = 0,

| ≤5

IO

IOH = –100 µA 25°C 4.95 4.95

= –

OH

VIC = 2.5 V, IOL = 50 µA 25°C 12 12

,

=

IC

VIC = 2.5 V,

= 1 V to 4

f = 10 kHz, 25°C 5 5 pF

f = 7 kHz, AV = 1 25°C 200 200

RS = 50 Ω

VDD = 4.4 V to 8 V, VIC = VDD/2,
No load

= 2.5 V,

O

= 0,

IC

RS = 50 Ω

= 50

S

=

OL

= 10

L

RL = 1 MΩ

= 2.5 V,

O

Full range

25°C

25°C 0.5 0.5

Full range 150 150

25°C 1 1

Full range 150 150

25°C

Full range

25°C 4.875 4.875

Full range 4.5 4.5

25°C 120 120

Full range 500 500

25°C 6 12 6 12

Full range 3 3

‡

25°C 800 800
25°C 10

25°C 10

25°C 70 83 70 83

Full range 70 70

25°C 80 95 80 95

Full range 80 80

25°C 13 25 13 25

Full range 30 30

TLV2211C TLV2211I

MIN TYP MAX MIN TYP MAX

0.45 3 0.45 3 mV

0.003 0.003 µV/mo

0 –0.3 0 –0.3

to to to to

4 4.2 4 4.2
0 0

to to

3.5 3.5

12

12

10

10

12

12

°

p

p

V

mV

V/mV

Ω

Ω

Ω

µ

8

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER

TEST CONDITIONS

T

†

UNIT

25°C

0.01

0.025

0.01

0.025

V

1.5 V to 3.5 V

R

10 kΩ

‡

C

L

100 F

‡

0.005

0.005

V

q

V/√H

V

q

V

‡

,

Gain-bandwidth product

f 10 kHz,

R

L

kΩ,

25°C6565

kH

B

g

O(PP)

,

V

,

25°C77

kH

‡

L,L

PARAMETER

TEST CONDITIONS

UNIT

R

S

Ω

ICR

gg

IO

S

VOHHigh-level output voltage

V

VOLLow-level output voltage

mV

A

gg

V

V

V

V/mV

k

ygj

V

V

VDD/2

No load95dB

TLV2211, TLV2211Y

Advanced LinCMOS RAIL-TO-RAIL

MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

SLOS156B – MAY 1996 – REVISED JANUAR Y 1997

operating characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)

A

TLV2211C TLV2211I

MIN TYP MAX MIN TYP MAX

SR Slew rate at unity gain

Equivalent input noise

n

voltage
Peak-to-peak equivalent

N(PP)

input noise voltage

I

n

φ

m

†

Full range is –40°C to 85°C.

‡

Referenced to 1.5 V

Equivalent input noise
current

Maximum output-swing V

OM

bandwidth
Phase margin at

unity gain
Gain margin

p

=

O

=

=

p

f = 10 Hz 25°C 72 72
f = 1 kHz
f = 0.1 Hz to 1 Hz 25°C 600 600
f = 0.1 Hz to 10 Hz

f = 10 kHz, R
CL = 100 pF

= 2 V, A

RL = 10 kه,

R

= 10 kه, C

,

=

‡

‡

L

= 10 kΩ

10

= 1,

CL = 100 pF

= 100 pF

,

Full

range

25°C 21 21

25°C 800 800
25°C 0.6 0.6

°

°

‡

25°C 56° 56°
25°C 22 22 dB

n

fA/√Hz

electrical characteristics at VDD = 3 V, TA = 25°C (unless otherwise noted)

TLV2211Y

MIN TYP MAX

V

IO

I

IO

I

IB

V

ICR

VD

r

i(d)

r

i(c)

c

i(c)

z

o

CMRR Common-mode rejection ratio VIC = 0 to 1.7 V, VO = 1.5 V, RS = 50 Ω 83 dB

SVR

I

DD

†

Referenced to 1.5 V

Input offset voltage
Input offset current
Input bias current

Common-mode input voltage range | VIO | ≤5 mV, RS = 50 Ω

p

p

Large-signal differential
voltage amplification

Differential input resistance 10
Common-mode input resistance 10
Common-mode input capacitance f = 10 kHz 5 pF
Closed-loop output impedance f = 7 kHz, AV = 1 200 Ω

Supply voltage rejection ratio
(∆VDD/∆VIO)

Supply current VO = 1.5 V, No load 11 µA

V

= ±1.5 V ,

DD±

= 50

IOH = –100 µA 2.94
IOH = –200 µA 2.85
VIC = 0, IOL = 50 µA 15
VIC = 0, IOL = 500 µA 150

= 1.5 V,

IC

= 2.7 V to 8 V,

DD

VO = 0, VIC = 0,

= 1 V to 2

O

=

IC

RL = 10 kΩ
RL = 1 MΩ

,

†

†

0.47 mV

0.5 pA
1 pA

–0.3

to

2.2

7

600

12
12

V/µs

z

µ

z

z

V

Ω
Ω

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

9