Wide Range of Supply Voltages Over
Specified Temperature Ranges:
0°C to 70°C...3 V to 16 V
–40 °C to 85°C...4 V to 16 V
–55 °C to 125°C...4 V to 16 V
D
Single-Supply Operation
D
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix,
I-Suffix Types)
D, JG, P OR PW PACKAGE
(TOP VIEW)
1OUT
1IN –
1IN +
GND
1
2
3
4
8
7
6
5
V
CC
2OUT
2IN –
2IN +
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
FK PACKAGE
(TOP VIEW)
1OUT
NCNCNC
NC
GND
DD
V
2IN +
NC
NC
1IN –
NC
1IN +
NC
3 2 1 20 19
4
5
6
7
8
910111213
NC
NC – No internal connection
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
D
Low Noise...Typically 32 nV/√Hz at
f = 1 kHz
D
Low Power...Typically 2.1 mW at 25°C,
V
= 5 V
DD
D
Output Voltage Range Includes Negative
Rail
D
High Input impedance...1012 Ω Typ
D
ESD-Protection Circuitry
D
Small-Outline Package Option Also
Available in Tape and Reel
D
Designed-In Latch-Up Immunity
DISTRIBUTION OF TLC27M7
INPUT OFFSET VOLTAGE
340 Units Tested From 2 Wafer Lots
VDD = 5 V
TA = 25°C
P Package
5
0
–4000400
VIO – Input Offset Voltage – µV
18
17
16
15
14
NC
2OUT
NC
2IN –
NC
30
25
20
15
10
Percentage of Units – %
–800
800
AVAILABLE OPTIONS
PACKAGE
T
A
°
°
°
–
°
–
The D and PW package is available taped and reeled. Add R suffix to the device type (e.g.,TLC27M7CDR).
LinCMOS is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
The TLC27M2 and TLC27M7 dual operational amplifiers combine a wide range of input offset voltage grades
with low offset voltage drift, high input impedance, low noise, and speeds approaching that of general-purpose
bipolar devices.These devices use T exas Instruments silicon-gate LinCMOStechnology , which provides offset
voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices
ideal for applications which have previously been reserved for general-purpose bipolar products,but with only
a fraction of the power consumption. Four offset voltage grades are available (C-suffix and I-suffix types),
ranging from the low-cost TLC27M2 (10 mV) to the high-precision TLC27M7 (500 µV). These advantages, in
combination with good common-mode rejection and supply voltage rejection, make these devices a good
choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOS operational
amplifiers, without the power penalties of bipolar technology. General applications such as transducer
interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the
TLC27M2 and TLC27M7. The devices also exhibit low voltage single-supply operation, making them ideally
suited for remote and inaccessible battery-powered applications. The common-mode input voltage range
includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC27M2 and TLC27M7 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in
handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of –55°C to 125°C.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
equivalent schematic (each amplifier)
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
V
DD
P4P3
R6
IN –
IN +
R1
P1
N1
R3D1R4D2
N2
P2
R5
N3
GND
N5R2
C1
N4
R7
N6
P6P5
OUT
N7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
UNIT
Common-mode input voltage, V
V
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
Because the TLC27M2 and TLC27M7 are optimized for single-supply operation, circuit configurations used for
the various tests often present some inconvenience since the input signal, in many cases, must be offset from
ground. This inconvenience can be avoided by testing the device with split supplies and the output load tied to
the negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either
circuit gives the same result.
1/2 V
DD
V
DD
–
V
V
I
+
C
L
(a) SINGLE SUPPLY(b) SPLIT SUPPLY
O
R
L
V
I
VDD+
–
+
VDD–
Figure 1. Unity-Gain Amplifier
2 kΩ
V
20 Ω
20 Ω
DD
–
V
+
O
20 Ω
(b) SPLIT SUPPLY(a) SINGLE SUPPLY
Figure 2. Noise-Test Circuit
2 kΩ
20 Ω
C
L
VDD+
–
+
VDD–
V
O
R
L
V
O
14
1/2 V
V
DD
10 kΩ
V
100 Ω
I
(a) SINGLE SUPPLY
DD
–
V
+
O
C
L
100 Ω
V
I
10 kΩ
VDD+
–
+
VDD–
(b) SPLIT SUPPLY
V
O
C
L
Figure 3. Gain-of-100 Inverting Amplifier
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
PARAMETER MEASUREMENT INFORMATION
input bias current
Because of the high input impedance of the TLC27M2 and TLC27M7 operational amplifiers, attempts to
measure the input bias current can result in erroneous readings. The bias current at normal room ambient
temperature is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two
suggestions are offered to avoid erroneous measurements:
1.Isolate the device from other potential leakage sources. Use a grounded shield around and between the
device inputs (see Figure 4). Leakages that would otherwise flow to the inputs are shunted away.
2.Compensate for the leakage of the test socket by actually performing an input bias current test (using
a picoammeter) with no device in the test socket. The actual input bias current can then be calculated
by subtracting the open-socket leakage readings from the readings obtained with a device in the test
socket.
One word of caution—many automatic testers as well as some bench-top operational amplifier testers
use the servo-loop technique with a resistor in series with the device input to measure the input bias
current (the voltage drop across the series resistor is measured and the bias current is calculated). This
method requires that a device be inserted into the test socket to obtain a correct reading; therefore, an
open-socket reading is not feasible using this method.
8
85
5
V = V
IC
41
Figure 4. Isolation Metal Around Device Inputs
(JG and P packages)
low-level output voltage
T o obtain low-supply-voltage operation, some compromise was necessary in the input stage. This compromise
results in the device low-level output being dependent on both the common-mode input voltage level as well
as the differential input voltage level. When attempting to correlate low-level output readings with those quoted
in the electrical specifications, these two conditions should be observed. If conditions other than these are to
be used, please refer to Figures 14 through 19 in the Typical Characteristics of this data sheet.
Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This
parameter is actually a calculation using input offset voltage measurements obtained at two different
temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device
and the test socket. This moisture results in leakage and contact resistance, which can cause erroneous input
offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage, since the
moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these
measurements be performed at temperatures above freezing to minimize error.
full-power response
Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage
swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is
generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal
input signal until the maximum frequency is found above which the output contains significant distortion. The
full-peak response is defined as the maximum output frequency , without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 1. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 5). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
(a) f = 1 kHz(b) BOM > f > 1 kHz(c) f = B
Figure 5. Full-Power-Response Output Signal
OM
(d) f > B
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.
OM
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
g
,
OH
gg
g
vsCommonmodeinutvoltage
14,15
VOLLow-level output voltage
g
yg
VD
g
IDDSupply current
yg
SR
Slew rate
yg
B
Unity-gain bandwidth
φ
yg
m
g
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
V
IO
α
VIO
V
OH
A
VD
IIB/I
V
IC
V
O(PP)
m
V
φPhase shiftvs Frequency32, 33
Input offset voltageDistribution6, 7
Temperature coefficientDistribution8, 9
vs High-level output current10, 11
High-level output voltage
p
Differential voltage amplification
Input bias and input offset currentvs Free-air temperature22
IO
Common-mode input voltagevs Supply voltage23
pp
Normalized slew ratevs Free-air temperature28
Maximum peak-to-peak output voltagevs Frequency29
1
Phase margin
Equivalent input noise voltagevs Frequency37
n
vs Supply voltage
vs Free-air temperature13
vs Common-mode input voltage14, 15
vs Differential input voltage
vs Free-air temperature17
vs Low-level output current18, 19
vs Supply voltage20
vs Free-air temperature21
vs Frequency32, 33
vs Supply voltage24
vs Free-air temperature25
vs Supply voltage26
vs Free-air temperature27
vs Free-air temperature30
vs Supply voltage31
vs Supply voltage34
vs Free-air temperature35
vs Capacitive loads36
While the TLC27M2 and TLC27M7 perform well using dual power supplies (also called balanced or split
supplies), the design is optimized for single-supply operation. This design includes an input common-mode
voltage range that encompasses ground as well as an output voltage range that pulls down to ground. The
supply voltage range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly
available for TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is
recommended.
Many single-supply applications require that a voltage be applied to one input to establish a reference level that
is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38).
The low input bias current of the TLC27M2 and TLC27M7 permits the use of very large resistive values to
implement the voltage divider, thus minimizing power consumption.
The TLC27M2 and TLC27M7 work well in conjunction with digital logic; however, when powering both linear
devices and digital logic from the same power supply, the following precautions are recommended:
1.Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear
device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital
logic.
2.Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, high-frequency applications may require RC decoupling.
V
DD
V
V
REF
R4
R1
I
R2
R3
C
0.01µF
–
V
+
O
V
+
REF
VO+ǒV
V
DD
REF
R3
R1)R3
R4
Ǔ
–V
I
R2
)
V
REF
Figure 38. Inverting Amplifier With Voltage Reference
The TLC27M2 and TLC27M7 are specified with a minimum and a maximum input voltage that, if exceeded at
either input, could cause the device to malfunction. Exceeding this specified range is a common problem,
especially in single-supply operation. Note that the lower range limit includes the negative rail, while the upper
range limit is specified at V
The use of the polysilicon-gate process and the careful input circuit design gives the TLC27M2 and TLC27M7
very good input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage
drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus
dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate)
alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude.
The offset voltage drift with time has been calculated to be typically 0.1µV/month, including the first month of
operation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC27M2 and
TLC27M7 are well suited for low-level signal processing; however, leakage currents on printed-circuit boards
and sockets can easily exceed bias current requirements and cause a degradation in device performance. It
is good practice to include guard rings around inputs (similar to those of Figure 4 in the Parameter Measurement
Information section). These guards should be driven from a low-impedance source at the same voltage level
as the common-mode input (see Figure 40).
–1 V at TA = 25°C and at VDD –1.5 V at all other temperatures.
DD
The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias current requirements of the TLC27M2 and TLC27M7 result in a very
low noise current, which is insignificant in most applications. This feature makes the devices especially
favorable over bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices
exhibit greater noise currents.
–
V
I
(a) NONINVERTING AMPLIFIER
+
V
V
O
I
(b) INVERTING AMPLIFIER
–
V
+
O
V
I
(c) UNITY-GAIN AMPLIFIER
–
+
Figure 40. Guard-Ring Schemes
output characteristics
The output stage of the TLC27M2 and TLC27M7 is designed to sink and source relatively high amounts of
current (see typical characteristics). If the output is subjected to a short-circuit condition, this high current
capability can cause device damage under certain conditions. Output current capability increases with supply
voltage.
V
O
All operating characteristics of the TLC27M2 and TLC27M7 were measured using a 20-pF load. The devices
drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole
occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 41). In many
cases, adding a small amount of resistance in series with the load capacitance alleviates the problem.
28
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
APPLICATION INFORMATION
(a) CL = 20 pF, RL = NO LOAD
(c) CL = 190 pF, RL = NO LOAD(d) TEST CIRCUIT
(b) CL = 170 pF, RL = NO LOAD
2.5 V
–
V
I
+
–2.5 V
C
V
L
O
TA = 25°C
f = 1 kHz
V
I(PP)
Figure 41. Effect of Capacitive Loads and Test Circuit
output characteristics (continued)
Although the TLC27M2 and TLC27M7 possess excellent high-level output voltage and current capability,
methods for boosting this capability are available, if needed. The simplest method involves the use of a pullup
resistor (R
to the use of this circuit. First, the NMOS pulldown transistor N4 (see equivalent schematic) must sink a
comparatively large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance
between approximately 60 Ω and 180 Ω, depending on how hard the op amp input is driven. With very low values
of R
P
the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the output
current.
) connected from the output to the positive supply rail (see Figure 42). There are two disadvantages
P
, a voltage offset from 0 V at the output occurs. Second, pullup resistor R
IP = Pullup current required by
the operational amplifier
(typically 500 µA)
R2
VDD*
IF)
V
IL)
I
L
O
Figure 42. Resistive Pullup to Increase V
V
O
C
R
L
–
V
I
P
OH
Figure 43. Compensation for Input Capacitance
+
O
feedback
Operational amplifier circuits nearly always employ feedback, and since feedback is the first prerequisite for
oscillation, some caution is appropriate. Most oscillation problems result from driving capacitive loads
(discussed previously) and ignoring stray input capacitance. A small-value capacitor connected in parallel with
the feedback resistor is an effective remedy (see Figure 43). The value of this capacitor is optimized empirically .
electrostatic-discharge protection
The TLC27M2 and TLC27M7 incorporate an internal electrostatic-discharge (ESD) protection circuit that
prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care
should be exercised, however, when handling these devices as exposure to ESD may result in the degradation
of the device parametric performance. The protection circuit also causes the input bias currents to be
temperature dependent and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC27M2 and
TLC27M7 inputs and outputs were designed to withstand –100-mA surge currents without sustaining latch-up;
however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection
diodes should not, by design, be forward biased. Applied input and output voltage should not exceed the supply
voltage by more than 300 mV . Care should be exercised when using capacitive coupling on pulse generators.
Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the
supply rails as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.
Figure 47. Photo-Diode Amplifier With Ambient Light Rejection
32
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
APPLICATION INFORMATION
1 MΩ
V
DD
100 kΩ
NOTES: VDD = 8 V to 16 V
1N4148
VO = 5 V, 10 mA
Figure 48. 5-V Low-Power Voltage Regulator
1 MΩ
V
0.1 µ F
I
+
–
–
+
5 V
TLC27M2
1/2
TLC27M2
100 kΩ
1/2
33 pF
0.22 µF
V
O
V
O
1 MΩ
100 kΩ
10 kΩ
0.1 µF
Figure 49. Single-Rail AC Amplifiers
100 kΩ
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
33
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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