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TLC27M2ACD
Datasheet
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Texas Instruments TLC27M7MUB, TLC27M7MJGB, TLC27M7MJG, TLC27M7MFKB, TLC27M7IP Datasheet

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TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Trimmed Offset Voltage:
DD
= 5 V
D
Input Offset Voltage Drift...Typically
0.1 µV/Month, Including the First 30 Days
D
Wide Range of Supply Voltages Over Specified Temperature Ranges:
0°C to 70°C...3 V to 16 V –40 °C to 85°C...4 V to 16 V –55 °C to 125°C...4 V to 16 V
D
Single-Supply Operation
D
Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix Types)
D
Low Noise...Typically 32 nV/√Hz at f = 1 kHz
D
Low Power...Typically 2.1 mW at 25°C, V
DD
= 5 V
D
Output Voltage Range Includes Negative Rail
D
High Input impedance...1012 Ω Typ
D
ESD-Protection Circuitry
D
Small-Outline Package Option Also Available in Tape and Reel
D
Designed-In Latch-Up Immunity
1 2 3 4
8 7 6 5
1OUT
1IN – 1IN +
GND
V
CC
2OUT 2IN – 2IN +
D, JG, P OR PW PACKAGE
(TOP VIEW)
3 2 1 20 19
910111213
4 5 6 7 8
18 17 16 15 14
NC 2OUT NC 2IN – NC
NC
1IN –
NC
1IN +
NC
FK PACKAGE
(TOP VIEW)
NC
1OUT
NCNCNC
NC
GND
NC
NC – No internal connection
DD
V
2IN +
–800
Percentage of Units – %
VIO – Input Offset Voltage – µV
30
800
0
–400 0 400
5
10
15
20
25
TA = 25°C
P Package
DISTRIBUTION OF TLC27M7
INPUT OFFSET VOLTAGE
340 Units Tested From 2 Wafer Lots VDD = 5 V
AVAILABLE OPTIONS
PACKAGE
T
A
VIOmax
AT 25°C
SMALL OUTLINE
(D)
CHIP CARRIER
(FK)
CERAMIC DIP
(JG)
PLASTIC DIP
(P)
TSSOP
(PW)
500 µV TLC27M7CD — — TLC27M7CP —
°
°
2 mV TLC27M2BCD — — TLC27M2BCP —
0°C to 70°C
5 mV TLC27M2ACD — — TLC27M2ACP —
10 mV TLC27M2CD — — TLC27M2CP TLC27M2CPW
500 µV TLC27M7ID — — TLC27M7IP —
°
°
2 mV TLC27M2BID — — TLC27M2BIP —
–
40°C to 85°C
5 mV TLC27M2AID — — TLC27M2AIP —
10 mV TLC27M2ID — — TLC27M2IP TLC27M2IPW
°
°
500 µV TLC27M7MD TLC27M7MFK TLC27M7MJG TLC27M7MP —
–
55°C to 125°C
10 mV TLC27M2MD TLC27M2MFK TLC27M2MJG TLC27M2MP —
The D and PW package is available taped and reeled. Add R suffix to the device type (e.g.,TLC27M7CDR).
Copyright 1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description
The TLC27M2 and TLC27M7 dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching that of general-purpose bipolar devices.These devices use T exas Instruments silicon-gate LinCMOStechnology , which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications which have previously been reserved for general-purpose bipolar products,but with only a fraction of the power consumption. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M2 (10 mV) to the high-precision TLC27M7 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC27M2 and TLC27M7. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. The TLC27M2 and TLC27M7 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
equivalent schematic (each amplifier)
V
DD
P4P3
R6
N5R2
P2
R1
P1
IN –
IN +
N1
R3 D1 R4 D2
N2
GND
N3
R5
C1
N4
R7
N6
N7
OUT
P6P5
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) ±V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input) – 0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
(each output) ±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into V
DD
45 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of GND 45 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25°C (see Note 3) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature, T
A
: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
TA = 125°C
POWER RATING
D 725 mW 5.8 mW/°C 464 mW 377 mW FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW
P 1000 mW 8.0 mW/°C 640 mW 520 mW
recommended operating conditions
C SUFFIX I SUFFIX M SUFFIX MIN MAX MIN MAX MIN MAX
UNIT
Supply voltage, V
DD
3 16 4 16 4 16 V
p
VDD = 5 V –0.2 3.5 –0.2 3.5 0 3.5
Common-mode input voltage, V
IC
VDD = 10 V –0.2 8.5 –0.2 8.5 0 8.5
V
Operating free-air temperature, T
A
0 70 –40 85 –55 125 °C
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
T
A
†
TLC27M2C TLC27M2AC TLC27M2BC TLC27M7C
UNIT
MIN TYP MAX
V
= 1.4 V, V
= 0,
25°C 1.1 10
TLC27M2C
O
,
RS = 50 Ω,
IC
,
RI = 100 kΩ
Full range
12
V
= 1.4 V, V
= 0,
25°C 0.9 5
mV
p
TLC27M2AC
O
,
RS = 50 Ω,
IC
,
RI = 100 kΩ
Full range
6.5
VIOInput offset voltage
V
= 1.4 V, V
= 0,
25°C 220 2000
TLC27M2BC
O
,
RS = 50 Ω,
IC
,
RI = 100 kΩ
Full range
3000
V
= 1.4 V, V
= 0,
25°C 185 500
µ
V
TLC27M7C
O
,
RS = 50 Ω,
IC
,
RI = 100 kΩ
Full range
1500
α
VIO
Average temperature coefficient of input
offset voltage
25°C to
70°C
1.7 µV/°C
p
25°C 0.1
p
IIOInput offset current (see Note 4)
V
O
= 2.5 V,
V
IC
= 2.5
V
70°C 7 300
pA
p
25°C 0.6
p
IIBInput bias current (see Note 4)
V
O
= 2.5 V,
V
IC
= 2.5
V
70°C 40 600
pA
Common-mode input voltage range
25°C
–0.2
to
4
–0.3
to
4.2
V
V
ICR
gg
(see Note 5)
Full range
–0.2
to
3.5
V
25°C 3.2 3.9
V
OH
High-level output voltage VID = 100 mV , RL = 100 kΩ
0°C
3 3.9
V 70°C 3 4 25°C 0 50
V
OL
Low-level output voltage VID = –100 mV, IOL = 0
0°C
0 50
mV 70°C 0 50 25°C 25 170
A
VD
Large-signal differential voltage
p
VO = 0.25 V to 2 V, RL = 100 kΩ
0°C 15 200
V/mV
am lification
70°C 15 140 25°C 65 91
CMRR Common-mode rejection ratio VIC = V
ICR
min
0°C 60 91
dB 70°C 60 92 25°C 70 93
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V, VO = 1.4 V
0°C 60 92
dB
(∆VDD/∆VIO)
70°C 60 94 25°C 210 560
I
DD
Supply current (two amplifiers)
V
O
= 2.5 V,
V
IC
= 2.5 V,
0°C
250 640
µA
No load
70°C 170 440
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
T
A
†
TLC27M2C TLC27M2AC TLC27M2BC TLC27M7C
UNIT
MIN TYP MAX
V
= 1.4 V, V
= 0,
25°C 1.1 10
TLC27M2C
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
12
V
= 1.4 V, V
= 0,
25°C 0.9 5
mV
p
TLC27M2AC
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
6.5
VIOInput offset voltage
V
= 1.4 V, V
= 0,
25°C 224 2000
TLC27M2BC
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
3000
V
= 1.4 V, V
= 0,
25°C 190 800
µ
V
TLC27M7C
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
1900
α
VIO
Average temperature coefficient of input offset voltage
25°C to
70°C
2.1 µV/°C
p
25°C 0.1
p
IIOInput offset current (see Note 4)
V
O
= 5 V,
V
IC
= 5
V
70°C 7 300
pA
p
25°C 0.7
p
IIBInput bias current (see Note 4)
V
O
= 5 V,
V
IC
= 5
V
70°C 50 600
pA
Common-mode input voltage range
25°C
–0.2
to
9
–0.3
to
9.2
V
V
ICR
gg
(see Note 5)
Full range
–0.2
to
8.5
V
25°C 8 8.7
V
OH
High-level output voltage VID = 100 mV , RL = 100 kΩ
0°C
7.8 8.7
V 70°C 7.8 8.7 25°C 0 50
V
OL
Low-level output voltage VID = –100 mV , IOL = 0
0°C
0 50
mV 70°C 0 50 25°C 25 275
A
VD
Large-signal differential voltage
p
VO = 1 V to 6 V, RL = 100 kΩ
0°C 15 320
V/mV
am lification
70°C 15 230 25°C 65 94
CMRR Common-mode rejection ratio VIC = V
ICR
min
0°C 60 94
dB 70°C 60 94 25°C 70 93
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V, VO = 1.4 V
0°C 60 92
dB
(∆VDD/∆VIO)
70°C 60 94 25°C 285 600
I
DD
Supply current (two amplifiers)
V
O
= 5 V,
V
IC
= 5 V,
0°C
345 800
µA
No load
70°C 220 560
†
Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .
5. This range also applies to each input individually.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
T
A
†
TLC27M2I TLC27M2AI TLC27M2BI TLC27M7I
UNIT
MIN TYP MAX
V
= 1.4 V, V
= 0,
25°C 1.1 10
TLC27M2I
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
13
V
= 1.4 V, V
= 0,
25°C 0.9 5
mV
p
TLC27M2AI
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
7
VIOInput offset voltage
V
= 1.4 V, V
= 0,
25°C 220 2000
TLC27M2BI
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
3500
V
= 1.4 V, V
= 0,
25°C 185 500
µ
V
TLC27M7I
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
2000
α
VIO
Average temperature coefficient of input offset voltage
25°C to
85°C
1.7 µV/°C
p
25°C 0.1
p
IIOInput offset current (see Note 4)
V
O
= 2.5 V,
V
IC
= 2.5
V
85°C 24 1000
pA
p
25°C 0.6
p
IIBInput bias current (see Note 4)
V
O
= 2.5 V,
V
IC
= 2.5
V
85°C 200 2000
pA
Common-mode input voltage range
25°C
–0.2
to
4
–0.3
to
4.2
V
V
ICR
gg
(see Note 5)
Full range
–0.2
to
3.5
V
25°C 3.2 3.9
V
OH
High-level output voltage VID = 100 mV , RL = 100 kΩ
–40°C
3 3.9
V 85°C 3 4 25°C 0 50
V
OL
Low-level output voltage VID = –100 mV , IOL = 0
–40°C
0 50
mV 85°C 0 50 25°C 25 170
A
VD
Large-signal differential voltage
p
VO = 0.25 V to 2 V, RL = 100 kΩ
–40°C 15 270
V/mV
am lification
85°C 15 130 25°C 65 91
CMRR Common-mode rejection ratio VIC = V
ICR
min
–40°C 60 90
dB 85°C 60 90 25°C 70 93
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V, VO = 1.4 V
–40°C 60 91
dB
(∆VDD/∆VIO)
85°C 60 94 25°C 210 560
I
DD
Supply current (two amplifiers)
V
O
= 2.5 V,
V
IC
= 2.5 V,
–40°C
315 800
µA
No load
85°C 160 400
†
Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .
5. This range also applies to each input individually.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, V
DD
= 10 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
T
A
†
TLC27M2I TLC27M2AI TLC27M2BI TLC27M7I
UNIT
MIN TYP MAX
V
= 1.4 V, V
= 0,
25°C 1.1 10
TLC27M2I
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
13
V
= 1.4 V, V
= 0,
25°C 0.9 5
mV
p
TLC27M2AI
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
7
VIOInput offset voltage
V
= 1.4 V, V
= 0,
25°C 224 2000
TLC27M2BI
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
3500
V
= 1.4 V, V
= 0,
25°C 190 800
µ
V
TLC27M7I
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
2900
α
VIO
Average temperature coefficient of input offset voltage
25°C to
85°C
2.1 µV/°C
p
25°C 0.1
p
IIOInput offset current (see Note 4)
V
O
= 5 V,
V
IC
= 5
V
85°C 26 1000
pA
25°C 0.7
I
IB
Input bias current (see Note 4) VO = 5 V, VIC = 5 V
85°C
220
200
0
pA
Common-mode input voltage range
25°C
–0.2
to
9
–0.3
to
9.2
V
V
ICR
gg
(see Note 5)
Full range
–0.2
to
8.5
V
25°C 8 8.7
V
OH
High-level output voltage VID = 100 mV , RL = 100 kΩ
–40°C
7.8 8.7
V 85°C 7.8 8.7 25°C 0 50
V
OL
Low-level output voltage VID = –100 mV, IOL = 0
–40°C
0 50
mV 85°C 0 50 25°C 25 275
A
VD
Large-signal differential voltage
p
VO = 1 V to 6 V, RL = 100 kΩ
–40°C
15 390
V/mV
am lification
85°C 15 220 25°C 65 94
CMRR Common-mode rejection ratio VIC = V
ICR
min
–40°C 60 93
dB 85°C 60 94 25°C 70 93
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V, VO = 1.4 V
–40°C
60 91
dB
(∆VDD/∆VIO)
85°C 60 94 25°C 285 600
I
DD
Supply current
V
O
= 5 V,
V
IC
= 5 V,
–40°C
450 900
µA
No load
85°C 205 520
†
Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .
5. This range also applies to each input individually.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
T
†
TLC27M2M TLC27M7M
UNIT
A
MIN TYP MAX
V
= 1.4 V, V
= 0,
25°C 1.1 10
p
TLC27M2M
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
12
VIOInput offset voltage
V
= 1.4 V, V
= 0,
25°C 185 500
mV
TLC27M7M
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
3750
α
VIO
Average temperature coefficient of input offset voltage
25°C to
125°C
1.7 µV/°C
p
25°C 0.1 pA
IIOInput offset current (see Note 4)
V
O
= 2.5 V,
V
IC
= 2.5
V
125°C 1.4 15 nA
p
25°C 0.6 pA
IIBInput bias current (see Note 4)
V
O
= 2.5 V,
V
IC
= 2.5
V
125°C 9 35 nA
Common-mode input voltage range
25°C
0
to
4
–0.3
to
4.2
V
V
ICR
gg
(see Note 5)
Full range
0
to
3.5
V
25°C 3.2 3.9
V
OH
High-level output voltage VID = 100 mV , RL = 100 kΩ
–55°C
3 3.9
V
125°C 3 4
25°C 0 50
V
OL
Low-level output voltage VID = –100 mV, IOL = 0
–55°C
0 50
mV
125°C 0 50
25°C 25 170
A
VD
Large-signal differential voltage
p
VO = 0.25 V to 2 V, RL = 100 kΩ
–55°C
15 290
V/mV
am lification
125°C 15 120
25°C 65 91
CMRR Common-mode rejection ratio VIC = V
ICR
min
–55°C 60 89
dB
125°C 60 91
25°C 70 93
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V, VO = 1.4 V
–55°C
60 91
dB
(∆VDD/∆VIO)
125°C 60 94
25°C 210 560
I
DD
Supply current (two amplifiers)
V
O
= 2.5 V,
V
IC
= 2.5 V,
–55°C
340 880
µA
No load
125°C 140 360
†
Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .
5. This range also applies to each input individually.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
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electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
T
†
TLC27M2M TLC27M7M
UNIT
A
MIN TYP MAX
V
= 1.4 V, V
= 0,
25°C 1.1 10
p
TLC27M2M
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
12
VIOInput offset voltage
V
= 1.4 V, V
= 0,
25°C 190 800
mV
TLC27M7M
O
,
RS = 50 Ω,
IC
,
RL = 100 kΩ
Full range
4300
α
VIO
Average temperature coefficient of input offset voltage
25°C to
125°C
2.1 µV/°C
p
25°C 0.1
p
IIOInput offset current (see Note 4)
V
O
=
5 V
,
V
IC
=
5 V
125°C 1.8 15
pA
p
25°C 0.7
p
IIBInput bias current (see Note 4)
V
O
= 5 V,
V
IC
= 5
V
125°C 10 35
pA
Common-mode input voltage range
25°C
0
to
9
–0.3
to
9.2
V
V
ICR
gg
(see Note 5)
Full range
0
to
8.5
V
25°C 8 8.7
V
OH
High-level output voltage VID = 100 mV , RL = 100 kΩ
–55°C
7.8 8.6
V
125°C 7.8 8.8
25°C 0 50
V
OL
Low-level output voltage VID = –100 mV, IOL = 0
–55°C
0 50
mV
125°C 0 50
25°C 25 275
A
VD
Large-signal differential voltage
p
VO = 1 V to 6 V, RL = 100 kΩ
–55°C
15 420
V/mV
am lification
125°C 15 190
25°C 65 94
CMRR Common-mode rejection ratio VIC = V
ICR
min
–55°C 60 93
dB
125°C 60 93
25°C 70 93
k
SVR
Supply-voltage rejection ratio
VDD = 5 V to 10 V, VO = 1.4 V
–55°C
60 91
dB
(∆VDD/∆VIO)
125°C 60 94
25°C 285 600
I
DD
Supply current (two amplifiers)
V
O
= 5 V,
V
IC
= 5 V,
–55°C
490 1000
µA
No load
125°C 180 480
†
Full range is –55°C to 125°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically .
5. This range also applies to each input individually.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, V
DD
= 5 V
PARAMETER TEST CONDITIONS T
A
TLC27M2C TLC27M2AC TLC27M2BC TLC27M7C
UNIT
MIN TYP MAX
25°C 0.43
V
I(PP)
= 1 V
0°C 0.46
RL = 100 kΩ,
p
()
70°C 0.36
SR
Slew rate at unity gain
C
L
=
20 pF
,
See
Figure 1
25°C 0.40
V/µs
See Figure 1
V
I(PP)
= 2.5 V
0°C 0.43
()
70°C 0.34
V
n
Equivalent input noise voltage
f = 1 kHz, See Figure 2
RS = 20 Ω,
25°C 32
nV/√Hz
25°C 55
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
0°C 60 kHz
R
L
=
100 kΩ
,
See Figure 1
70°C 50 25°C 525
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
0°C
600 kHz
See Figure 3
70°C 400 25°C 40°
φ
m
Phase margin
V
I
= 10 mV,
=
p
f
=
B
1
,
0°C 41°
C
L
= 20 F,
See Figure 3
70°C 39°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC27M2C TLC27M2AC TLC27M2BC TLC27M7C
UNIT
MIN TYP MAX
25°C 0.62
V
I(PP)
= 1 V
0°C 0.67
RL = 100 kΩ,
p
()
70°C 0.51
SR
Slew rate at unity gain
C
L
= 20 pF,
See
Figure 1
25°C 0.56
V/µs
See Figure 1
V
I(PP)
= 5.5 V
0°C 0.61
()
70°C 0.46
V
n
Equivalent input noise voltage
f = 1 kHz, See Figure 2
RS = 20 Ω,
25°C 32
nV/√Hz
25°C 35
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
0°C 40
kHz
R
L
=
100 kΩ
,
See Figure 1
70°C 30 25°C 635
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
0°C
710
kHz
See Figure 3
70°C 510 25°C 43°
φ
m
Phase margin
V
I
= 10 mV,
=
p
f
=
B
1
,
0°C 44°
C
L
= 20 F,
See Figure 3
70°C 42°
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS T
A
TLC27M2I TLC27M2AI TLC27M2BI TLC27M7I
UNIT
MIN TYP MAX
25°C 0.43
V
I(PP)
= 1 V
–40°C 0.51
RL = 100 kΩ,
p
()
85°C 0.35
SR
Slew rate at unity gain
C
L
=
20 pF
,
See
Figure 1
25°C 0.40
V/µs
See Figure 1
V
I(PP)
= 2.5 V
–40°C 0.48
()
85°C 0.32
V
n
Equivalent input noise voltage
f = 1 kHz, See Figure 2
RS = 20 Ω,
25°C 32
nV/√Hz
25°C 55
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–40°C 75
kHz
R
L
=
100 kΩ
,
See Figure 1
85°C 45 25°C 525
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
–40°C
770
MHz
See Figure 3
85°C 370 25°C 40°
φ
m
Phase margin
V
I
= 10 mV,
=
p
f
=
B
1
,
–40°C 43°
C
L
= 20 F,
See Figure 3
85°C 38°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC27M2I TLC27M2AI TLC27M2BI TLC27M7I
UNIT
MIN TYP MAX
25°C 0.62
V
I(PP)
= 1 V
–40°C 0.77
RL = 100 kΩ,
p
()
85°C 0.47
SR
Slew rate at unity gain
C
L
= 20 pF,
See
Figure 1
25°C 0.56
V/µs
See Figure 1
V
I(PP)
= 5.5 V
–40°C 0.70
()
85°C 0.44
V
n
Equivalent input noise voltage
f = 1 kHz, See Figure 2
RS = 20 Ω,
25°C 32
nV/√Hz
25°C 35
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–40°C 45
kHz
R
L
=
100 kΩ
,
See Figure 1
85°C 25 25°C 635
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
–40°C
880
MHz
See Figure 3
85°C 480 25°C 43°
φ
m
Phase margin
V
I
= 10 mV,
=
p
f
=
B
1
,
–40°C 46°
C
L
= 20 F,
See Figure 3
85°C 41°
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, V
DD
= 5 V
PARAMETER TEST CONDITIONS T
A
TLC27M2M TLC27M7M
UNIT
A
MIN TYP MAX
25°C 0.43
V
I(PP)
= 1 V
–55°C 0.54
RL = 100 kΩ,
p
()
125°C 0.29
SR
Slew rate at unity gain
C
L
=
20 pF
,
See
Figure 1
25°C 0.40
V/µs
See Figure 1
V
I(PP)
= 2.5 V
–55°C 0.49
()
125°C 0.28
V
n
Equivalent input noise voltage
f = 1 kHz, See Figure 2
RS = 20 Ω,
25°C 32
nV/√Hz
25°C 55
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–55°C 80
kHz
R
L
=
100 kΩ
,
See Figure 1
125°C 40
25°C 525
B
1
Unity-gain bandwidth
VI = 10 mV,
CL = 20 pF,
–55°C
850
kHz
See Figure 3
125°C 330
25°C 40°
φ
m
Phase margin
V
I
= 10 mV,
=
p
f
=
B
1
,
–55°C 44°
C
L
= 20 F,
See Figure 3
125°C 36°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC27M2M TLC27M7M
UNIT
A
MIN TYP MAX
25°C 0.62
V
I(PP)
= 1 V
–55°C 0.81
RL = 100 kΩ,
p
()
125°C 0.38
SR
Slew rate at unity gain
C
L
=
20 pF
,
See Fi
g
ure 1
25°C 0.56
V/µs
See Figure 1
V
I(PP)
= 5.5 V
–55°C 0.73
()
125°C 0.35
V
n
Equivalent input noise voltage
f = 1 kHz, See Figure 2
RS = 20 Ω,
25°C 32
nV/√Hz
25°C 35
B
OM
Maximum output-swing bandwidth
VO = VOH,
CL = 20 pF,
–55°C 50
kHz
R
L
=
100 kΩ
,
See Figure 1
125°C 20
25°C 635
B
1
Unity gain bandwidth
VI = 10 mV,
CL = 20 pF,
–55°C
960
kHz
See Figure 3
125°C 440
25°C 43°
φ
m
Phase margin
V
I
= 10 mV,
p
f
=
B
1
,
–55°C 47°
C
L
= 20 F,
See Figure 3
125°C 39°
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
single-supply versus split-supply test circuits
Because the TLC27M2 and TLC27M7 are optimized for single-supply operation, circuit configurations used for the various tests often present some inconvenience since the input signal, in many cases, must be offset from ground. This inconvenience can be avoided by testing the device with split supplies and the output load tied to the negative rail. A comparison of single-supply versus split-supply test circuits is shown below. The use of either circuit gives the same result.
–
+
V
DD
C
L
R
L
V
O
V
I
V
I
V
O
R
L
C
L
–
+
VDD+
VDD–
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
Figure 1. Unity-Gain Amplifier
1/2 V
DD
V
DD
–
+
VDD+
–
+
20 Ω
V
O
2 kΩ
20 Ω
VDD–
20 Ω
20 Ω
2 kΩ
V
O
(b) SPLIT SUPPL Y(a) SINGLE SUPPLY
Figure 2. Noise-Test Circuit
V
DD
–
+
10 kΩ
V
O
100 Ω
C
L
1/2 V
DD
V
I
V
I
C
L
100 Ω
V
O
10 kΩ
–
+
VDD+
VDD–
(a) SINGLE SUPPLY
(b) SPLIT SUPPL Y
Figure 3. Gain-of-100 Inverting Amplifier
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
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15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
input bias current
Because of the high input impedance of the TLC27M2 and TLC27M7 operational amplifiers, attempts to measure the input bias current can result in erroneous readings. The bias current at normal room ambient temperature is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket. Two suggestions are offered to avoid erroneous measurements:
1. Isolate the device from other potential leakage sources. Use a grounded shield around and between the device inputs (see Figure 4). Leakages that would otherwise flow to the inputs are shunted away.
2. Compensate for the leakage of the test socket by actually performing an input bias current test (using a picoammeter) with no device in the test socket. The actual input bias current can then be calculated by subtracting the open-socket leakage readings from the readings obtained with a device in the test socket.
One word of caution—many automatic testers as well as some bench-top operational amplifier testers use the servo-loop technique with a resistor in series with the device input to measure the input bias current (the voltage drop across the series resistor is measured and the bias current is calculated). This method requires that a device be inserted into the test socket to obtain a correct reading; therefore, an open-socket reading is not feasible using this method.
V = V
IC
41
5
8
85
Figure 4. Isolation Metal Around Device Inputs
(JG and P packages)
low-level output voltage
T o obtain low-supply-voltage operation, some compromise was necessary in the input stage. This compromise results in the device low-level output being dependent on both the common-mode input voltage level as well as the differential input voltage level. When attempting to correlate low-level output readings with those quoted in the electrical specifications, these two conditions should be observed. If conditions other than these are to be used, please refer to Figures 14 through 19 in the Typical Characteristics of this data sheet.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
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16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
input offset voltage temperature coefficient
Erroneous readings often result from attempts to measure temperature coefficient of input offset voltage. This parameter is actually a calculation using input offset voltage measurements obtained at two different temperatures. When one (or both) of the temperatures is below freezing, moisture can collect on both the device and the test socket. This moisture results in leakage and contact resistance, which can cause erroneous input offset voltage readings. The isolation techniques previously mentioned have no effect on the leakage, since the moisture also covers the isolation metal itself, thereby rendering it useless. It is suggested that these measurements be performed at temperatures above freezing to minimize error.
full-power response
Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal input signal until the maximum frequency is found above which the output contains significant distortion. The full-peak response is defined as the maximum output frequency , without regard to distortion, above which full peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified in this data sheet and is measured using the circuit of Figure 1. The initial setup involves the use of a sinusoidal input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained (Figure 5). A square wave is used to allow a more accurate determination of the point at which the maximum peak-to-peak output is reached.
(a) f = 1 kHz (b) BOM > f > 1 kHz (c) f = B
OM
(d) f > B
OM
Figure 5. Full-Power-Response Output Signal
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume, short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET devices and require longer test times than their bipolar and BiFET counterparts. The problem becomes more pronounced with reduced supply levels and lower temperatures.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
V
IO
Input offset voltage Distribution 6, 7
α
VIO
T emperature coef ficient Distribution 8, 9
vs High-level output current 10, 11
V
OH
High-level output voltage
g
vs Supply voltage
,
12
OH
gg
g
vs Free-air temperature 13 vs Common-mode input voltage 14, 15
p
vs Common mode in ut voltage
vs Differential input voltage
14, 15
16
VOLLow-level output voltage
g
vs Free-air temperature 17 vs Low-level output current 18, 19
vs Supply voltage 20
A
VD
Differential voltage amplification
yg
vs Free-air temperature 21
VD
g
vs Frequency 32, 33
IIB/I
IO
Input bias and input offset current vs Free-air temperature 22
V
IC
Common-mode input voltage vs Supply voltage 23
pp
vs Supply voltage 24
IDDSupply current
yg
vs Free-air temperature 25 vs Supply voltage 26
SR
Slew rate
yg
vs Free-air temperature 27
Normalized slew rate vs Free-air temperature 28
V
O(PP)
Maximum peak-to-peak output voltage vs Frequency 29
vs Free-air temperature 30
B1Unity-gain bandwidth
vs Supply voltage 31 vs Supply voltage 34
φ
m
Phase margin
yg
vs Free-air temperature 35
m
g
vs Capacitive loads 36
V
n
Equivalent input noise voltage vs Frequency 37
φ Phase shift vs Frequency 32, 33
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
–5
Percentage of Units – %
VIO – Input Offset Voltage – mV
60
5
0
–4 –3 –2 –1 0 1 2 3 4
10
20
30
40
50
DISTRIBUTION OF TLC27M2
INPUT OFFSET VOLTAGE
612 Amplifiers Tested From 4 Wafer Lots VDD = 5 V TA = 25°C
P Package
Figure 7
50
40
30
20
10
43210–1–2–3–4
0
5
60
VIO – Input Offset Voltage – mV
Percentage of Units – %
–5
DISTRIBUTION OF TLC27M2
INPUT OFFSET VOLTAGE
P Package
TA = 25°C
612 Amplifiers Tested From 4 Wafer Lots VDD = 10 V
Figure 8
–10
Percentage of Units – %
α
VIO
– Temperature Coefficient – µV/°C
60
10
0
–8 –6 –4 –2 0 2 4 6 8
10
20
30
40
50
DISTRIBUTION OF TLC27M2 AND TLC27M7
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
Outliers: (1) 33.0 µV/°C
TA = 25°C to 125°C P Package
224 Amplifiers Tested From 6 Wafer Lots VDD = 5 V
Figure 9
50
40
30
20
10
86420–2–4–6–8
0
10
60
α
VIO
– Temperature Coefficient – µV/°C
Percentage of Units – %
–10
DISTRIBUTION OF TLC27M2 AND TLC27M7
INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
Outliers: (1) 34.6 µV/°C
224 Amplifiers Tested From 6 Wafer Lots VDD = 10 V
TA = 25°C to 125°C P Package
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS051C – OCTOBER 1987 – REVISED MA Y 1999
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
†
Figure 10
0
0
VOH – High-Level Output Voltage – V
IOH – High-Level Output Current – mA
–10
5
–2 –4 –6 –8
1
2
3
4
TA = 25°C
VID = 100 mV
VDD = 3 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
V
OH
VDD = 5 V
VDD = 4 V
Figure 11
0
0
IOH – High-Level Output Current – mA
–40
16
–10 –20 –30
2
4
6
8
10
12
14
VDD = 16 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
VOH – High-Level Output Voltage – V
V
OH
VID= 100 mV TA = 25°C
VDD = 10 V
Figure 12
0
VDD – Supply Voltage – V
162 4 6 8 10 12 14
14
12
10
8
6
4
2
16
0
HIGH-LEVEL OUTPUT VOLTAGE
vs
SUPPLY VOLTAGE
VOH – High-Level Output Voltage – V
V
OH
ÁÁÁÁ
ÁÁÁÁ
VID = 100 mV RL = 100 kΩ TA = 25°C
Figure 13
VDD –1.7
VDD –1.8
VDD –1.9
VDD –2
VDD –2.1
VDD –2.2
VDD –2.3
1007550250–25–50
VDD –1.6
125
TA – Free-Air Temperature – °C
VDD –2.4
–75
IOH = –5 mA VID = 100 mA
VDD = 5 V
VDD = 10 V
HIGH-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
VOH – High-Level Output Voltage – V
V
OH
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
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TYPICAL CHARACTERISTICS
†
Figure 14
0
300
VOL – Low-Level Output V oltage – mV
VIC – Common-Mode Input Voltage – V
4
700
1 2 3
400
500
600
TA = 25°C
IOL = 5 mA
VDD = 5 V
VID = –100 mV
VID = –1 V
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
650
550
450
350
V
OL
Figure 15
250
0
VIC – Common-Mode Input Voltage – V
300
350
400
450
500
24 6810
V
DD
= 10 V IOL = 5 mA TA = 25°C
VID = –1 V VID = –2.5 V
VID = –100 mV
LOW-LEVEL OUTPUT VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
1357 7
VOL – Low-Level Output V oltage – mV
V
OL
Figure 16
0
VID – Differential Input Voltage – V
–10–2 –4 –6 –8
800
700
600
500
400
300
200
100
0
IOL = 5 mA VIC = |VID/2|
TA = 25°C
VDD = 5 V
LOW-LEVEL OUTPUT VOLTAGE
vs
DIFFERENTIAL INPUT VOLTAGE
–1 –3 –5 –7 –9
VOL – Low-Level Output V oltage – mV
V
OL
VDD = 10 V
Figure 17
LOW-LEVEL OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
–75
0
TA – Free-Air Temperature – °C
125
900
–50 –25 0 25 50 75 100
100
200
300
400
500
600
700
800
VIC = 0.5 V
VID = –1 V
IOL = 5 mA
VDD = 5 V
VDD = 10 V
VOL – Low-Level Output V oltage – mV
V
OL
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
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TYPICAL CHARACTERISTICS
†
Figure 18
0
VOL – Low-Level Output Voltage – V
IOL – Low-Level Output Current – mA
1
8
0
12
34567
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VDD = 3 V
VDD = 5 V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
V
OL
VDD = 4 V
VID = –1 V VIC = 0.5 V
TA = 25°C
Figure 19
0
IOL – Low-Level Output Current – mA
3
30
0
5 10 15 20 25
0.5
1
1.5
2
2.5 TA = 25°C
VIC = 0.5 V
VID = –1 V
VDD = 16 V
VDD = 10 V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
VOL – Low-Level Output Voltage – V
V
OL
Figure 20
0
500
16
0
2 4 6 8 10 12 14
50
100
150
200
250
300
350
400
450
RL = 100 kΩ
TA = –55°C
–40°C
0°C
25°C
70°C
85°C
125°C
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
VDD – Supply Voltage – V
AVD – Large-Signal Differential
A
VD
Voltage Amplification – V/mV
Figure 21
450
400
350
300
250
200
150
100
50
1007550250–25–50
0
125
500
TA – Free-Air Temperature – °C
–75
VDD = 10 V
RL = 100 kΩ
LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
VDD = 5 V
AVD – Large-Signal Differential
A
VD
Voltage Amplification – V/mV
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
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TYPICAL CHARACTERISTICS
†
Figure 22
0.1 125
10000
45 65 85 105
1
10
100
1000
25
IIB and IIO – input Bias and Offset Currents – pA
TA – Free-Air Temperature – °C
VDD = 10 V VIC = 5 V
See Note A
INPUT BIAS CURRENT AND INPUT OFFSET
CURRENT
vs
FREE-AIR TEMPERATURE
I
IO
I
IB
IB
I I
IO
NOTE A: The typical values of input bias current and input offset current below 5 pA were determined mathematically.
Figure 23
0
VIC – Common-Mode Input Voltage – V
VDD – Supply Voltage – V
16
16
0
246810 12 14
2
4
6
8
10
12
14
TA = 25°C
COMMON-MODE
INPUT VOLTAGE POSITIVE LIMIT
vs
SUPPLY VOLTAGE
V
IC
Figure 24
300
IDD – Supply Current – A
VDD – Supply Voltage – V
VO = VDD/2 No Load
TA = –55°C
0°C
25°C 70°C
125°C
0
800
16
0
2 4 6 8 10 12 14
100
200
400
500
600
700
–40°C
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
DD
I
Aµ
Figure 25
No Load
VO = VDD/2
–75
TA – Free-Air Temperature – °C
500
125
0
–50 –25 0 25 50 75 100
50
100
150
200
250
300
350
400
450
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
IDD – Supply Current – A
DD
I
Aµ
VDD = 10 V
VDD = 5 V
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
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TYPICAL CHARACTERISTICS
†
Figure 26
0
VDD – Supply Voltage – V
0.9
16
0.3 246810 12 14
0.4
0.5
0.6
0.7
0.8
CL = 20 pF
RL = 100 kΩ
V
IPP
= 1 V
AV = 1
See Figure 1
TA = 25°C
SLEW RATE
vs
SUPPLY VOLTAGE
sµ
SR – Slew Rate – V/
Figure 27
– 75
TA – Free-Air Temperature – °C
0.9
125
0.2 – 50 – 25 0 25 50 75 100
0.3
0.4
0.5
0.6
0.7
0.8
RL = 100 kΩ
AV = 1
See Figure 1
CL = 20 pF
SLEW RATE
vs
FREE-AIR TEMPERATURE
sµ
SR – Slew Rate – V/
V
I(PP)
= 5.5 V
VDD = 10 V
VDD = 10 V V
I(PP)
= 1 V
VDD = 5 V V
I(PP)
= 1 V
VDD = 5 V V
I(PP)
= 2.5 V
Figure 28
–75
Normalized Slew Rate
TA – Free-Air Temperature – °C
1.4
125
0.5 –50 –25 0 25 50 75 100
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
AV = 1 V
I(PP)
= 1 V
RL = 100 kΩ CL = 20 pF
VDD = 10 V
VDD = 5 V
NORMALIZED SLEW RATE
vs
FREE-AIR TEMPERATURE
Figure 29
1
f – Frequency – kHz
10
1000
0
1
2
3
4
5
6
7
8
9
10 100
TA = –55°C
TA = 25°C
TA = 125°C
See Figure 1
MAXIMUM PEAK-TO-PEAK OUTPUT
VOLTAGE
vs
FREQUENCY
RL = 100 kΩ
VDD = 5 V
VDD = 10 V
– Maximum Peak-to-Peak Output Voltage – VV
O(PP)
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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TYPICAL CHARACTERISTICS
†
Figure 30
–75
B1 – Unity-Gain Bandwidth – kHz
TA – Free-Air Temperature – C
900
125
300
–50 –25 0 25 50 75 100
400
500
600
700
800
UNITY-GAIN BANDWIDTH
vs
FREE-AIR TEMPERATURE
B
1
VDD = 5 V VI = 10 mV CL = 20 pF See Figure 3
Figure 31
0
VDD – Supply Voltage – V
800
16
400
2 4 6 8 10 12 14
450
500
550
600
650
700
750
UNITY-GAIN BANDWIDTH
vs
SUPPLY VOLTAGE
B1 – Unity-Gain Bandwidth – kHz
B
1
See Figure 3
TA = 25°C
CL = 20 pF
VI = 10 mV
LARGE-SCALE DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
0
f – Frequency – Hz
1 M
0.1 10 100 1 k 10 k 100 k
1
10
10
2
10
3
10
4
10
5
10
6
150°
120°
90°
60°
30°
0°
180°
Phase Shift
TA = 25°C
RL = 100 kΩ
VDD = 5 V
Phase Shift
10
7
A
VD
AVD – Large-Signal Differential
A
VD
Voltage Amplification
Figure 32
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TLC27M2, TLC27M2A, TLC27M2B, TLC27M7
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TYPICAL CHARACTERISTICS
†
100 k10 k1 k10010 1 M0
Phase Shift
VDD = 10 V RL = 100 kΩ TA = 25°C
Phase Shift
180°
0°
30°
60°
90°
120°
150°
10
6
10
5
10
4
10
3
10
2
10
1
0.1 f – Frequency – Hz
10
7
LARGE-SCALE DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
A
VD
AVD – Large-Signal Differential
A
VD
Voltage Amplification
Figure 33
Figure 34
0
38°
m – Phase Margin
VDD – Supply Voltage – V
16
50°
2 4 6 8 10 12 14
40°
42°
44°
46°
48°
See Figure 3
TA = 25°C
CL = 20 pF
VI = 10 mV
PHASE MARGIN
vs
SUPPLY VOLTAGE
m
φ
Figure 35
–75
35°
TA – Free-Air Temperature – C
125
45°
–50 –25 0 25 50 75 100
37°
39°
41°
43°
VDD = 5 V
VI = 10 mV CL = 20 pF
See Figure 3
PHASE MARGIN
vs
FREE-AIR TEMPERATURE
m – Phase Margin
m
φ
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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TYPICAL CHARACTERISTICS
Figure 36
0
28°
CL – Capacitive Load – pF
100
44°
20 40 60 80
30°
32°
34°
36°
38°
40°
42°
VDD = 5 V
VI = 10 mV TA = 25°C See Figure 3
PHASE MARGIN
vs
CAPACITIVE LOAD
9070503010
m – Phase Margin
m
φ
Figure 37
1
0
Vn – Equivalent Input Noise Voltage – nV/Hz
f –Frequency – Hz
1000
300
50
100
150
200
250
10 100
See Figure 2
TA = 25°C
RS = 20 Ω
VDD = 5 V
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
V
n
nV/ Hz
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APPLICATION INFORMATION
single-supply operation
While the TLC27M2 and TLC27M7 perform well using dual power supplies (also called balanced or split supplies), the design is optimized for single-supply operation. This design includes an input common-mode voltage range that encompasses ground as well as an output voltage range that pulls down to ground. The supply voltage range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly available for TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is recommended.
Many single-supply applications require that a voltage be applied to one input to establish a reference level that is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38). The low input bias current of the TLC27M2 and TLC27M7 permits the use of very large resistive values to implement the voltage divider, thus minimizing power consumption.
The TLC27M2 and TLC27M7 work well in conjunction with digital logic; however, when powering both linear devices and digital logic from the same power supply, the following precautions are recommended:
1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital logic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive decoupling is often adequate; however, high-frequency applications may require RC decoupling.
R4
V
O
V
DD
R2
R1
V
I
V
REF
R3
C
0.01µF
–
+
V
REF
+
V
DD
R3
R1)R3
VO+ǒV
REF
–V
I
Ǔ
R4 R2
)
V
REF
Figure 38. Inverting Amplifier With Voltage Reference
–
+
–
+
(a) COMMON SUPPLY RAILS
Logic
Power
Supply
Logic Logic
Logic Logic Logic
(b) SEPARATE BYPASSED SUPPLY RAILS (preferred)
Power
Supply
Output
Output
Figure 39. Common Versus Separate Supply Rails
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APPLICATION INFORMATION
input characteristics
The TLC27M2 and TLC27M7 are specified with a minimum and a maximum input voltage that, if exceeded at either input, could cause the device to malfunction. Exceeding this specified range is a common problem, especially in single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit is specified at V
DD
–1 V at TA = 25°C and at VDD –1.5 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLC27M2 and TLC27M7 very good input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset voltage drift with time has been calculated to be typically 0.1µV/month, including the first month of operation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC27M2 and TLC27M7 are well suited for low-level signal processing; however, leakage currents on printed-circuit boards and sockets can easily exceed bias current requirements and cause a degradation in device performance. It is good practice to include guard rings around inputs (similar to those of Figure 4 in the Parameter Measurement Information section). These guards should be driven from a low-impedance source at the same voltage level as the common-mode input (see Figure 40).
The inputs of any unused amplifiers should be tied to ground to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage differential amplifier. The low input bias current requirements of the TLC27M2 and TLC27M7 result in a very low noise current, which is insignificant in most applications. This feature makes the devices especially favorable over bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit greater noise currents.
V
I
(a) NONINVERTING AMPLIFIER
(c) UNITY-GAIN AMPLIFIER
– +
(b) INVERTING AMPLIFIER
V
I
– +
– +
V
I
V
O
V
O
V
O
Figure 40. Guard-Ring Schemes
output characteristics
The output stage of the TLC27M2 and TLC27M7 is designed to sink and source relatively high amounts of current (see typical characteristics). If the output is subjected to a short-circuit condition, this high current capability can cause device damage under certain conditions. Output current capability increases with supply voltage.
All operating characteristics of the TLC27M2 and TLC27M7 were measured using a 20-pF load. The devices drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 41). In many cases, adding a small amount of resistance in series with the load capacitance alleviates the problem.
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APPLICATION INFORMATION
–
+
2.5 V
V
O
C
L
–2.5 V
V
I
(a) CL = 20 pF, RL = NO LOAD
(b) CL = 170 pF, RL = NO LOAD
(c) CL = 190 pF, RL = NO LOAD (d) TEST CIRCUIT
TA = 25°C f = 1 kHz V
I(PP)
= 1 V
Figure 41. Effect of Capacitive Loads and Test Circuit
output characteristics (continued)
Although the TLC27M2 and TLC27M7 possess excellent high-level output voltage and current capability, methods for boosting this capability are available, if needed. The simplest method involves the use of a pullup resistor (R
P
) connected from the output to the positive supply rail (see Figure 42). There are two disadvantages to the use of this circuit. First, the NMOS pulldown transistor N4 (see equivalent schematic) must sink a comparatively large amount of current. In this circuit, N4 behaves like a linear resistor with an on-resistance between approximately 60 Ω and 180 Ω, depending on how hard the op amp input is driven. With very low values of R
P
, a voltage offset from 0 V at the output occurs. Second, pullup resistor R
P
acts as a drain load to N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the output current.
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APPLICATION INFORMATION
output characteristics (continued)
Figure 42. Resistive Pullup to Increase V
OH
–
+
V
I
V
DD
R
P
V
O
R2
R1
R
L
I
P
I
P
I
L
RP+
VDD*
V
O
IF)
IL)
I
P
IP = Pullup current required by the operational amplifier (typically 500 µA)
V
O
–
+
C
Figure 43. Compensation for Input Capacitance
feedback
Operational amplifier circuits nearly always employ feedback, and since feedback is the first prerequisite for oscillation, some caution is appropriate. Most oscillation problems result from driving capacitive loads (discussed previously) and ignoring stray input capacitance. A small-value capacitor connected in parallel with the feedback resistor is an effective remedy (see Figure 43). The value of this capacitor is optimized empirically .
electrostatic-discharge protection
The TLC27M2 and TLC27M7 incorporate an internal electrostatic-discharge (ESD) protection circuit that prevents functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2. Care should be exercised, however, when handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The protection circuit also causes the input bias currents to be temperature dependent and have the characteristics of a reverse-biased diode.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC27M2 and TLC27M7 inputs and outputs were designed to withstand –100-mA surge currents without sustaining latch-up; however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection diodes should not, by design, be forward biased. Applied input and output voltage should not exceed the supply voltage by more than 300 mV . Care should be exercised when using capacitive coupling on pulse generators. Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the supply rails as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and can be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of latch-up occurring increases with increasing temperature and supply voltages.
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APPLICATION INFORMATION
–
+
R2
68 kΩ
2.2 nF
C2
V
O
1N4148
470 kΩ
100 kΩ
C1
2.2 nF
68 kΩ
R1
47 kΩ
100 kΩ
1 µF
100 kΩ
5 V
1/2
TLC27M2
NOTES: V
O(PP)
≈ 2 V
fO+
1
2pR1R2C1C2
Ǹ
Figure 44. Wien Oscillator
V
I
R
5 V
I
S
2N3821
–
+
1/2
TLC27M7
NOTES: VI = 0 V to 3 V
IS+
V
I
R
Figure 45. Precision Low-Current Sink
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APPLICATION INFORMATION
(see Note A)
–
+
100 kΩ
+–
100 kΩ
100 kΩ
Gain Control
1 MΩ
1 kΩ
10 kΩ
5 V
1µ F
– +
– +
0.1 µF
1/2
TLC27M2
0.1 µF
NOTE A: Low to medium impedance dynamic mike
Figure 46. Microphone Preamplifier
–
+
10 MΩ
V
O
V
REF
150 pF
100 kΩ
15 nF
V
DD
–
+
1 kΩ
1/2
TLC27M2
TLC27M2
1/2
NOTES: VDD = 4 V to 15 V
V
ref
= 0 V to VDD – 2 V
Figure 47. Photo-Diode Amplifier With Ambient Light Rejection
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APPLICATION INFORMATION
–
+
V
DD
V
O
1/2
TLC27M2
1 MΩ
33 pF
100 kΩ
1N4148
100 kΩ
NOTES: VDD = 8 V to 16 V
VO = 5 V, 10 mA
Figure 48. 5-V Low-Power Voltage Regulator
–
+
10 kΩ
TLC27M2
1/2
V
O
100 kΩ
100 kΩ
0.1 µF
1 MΩ
0.22 µF
1 MΩ
V
I
0.1 µ F
5 V
Figure 49. Single-Rail AC Amplifiers
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICA TIONS IS UNDERST OOD TO BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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