TEXAS INSTRUMENTS TC245 Technical data

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TC245

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

• High-Resolution, Solid-State Image Sensor

for NTSC B/W TV Applications

• 8-mm Image-Area Diagonal, Compatible

With 1/2” Vidicon Optics

• 755 (H) x 242 (V) Active Elements in

Image-Sensing Area

• Advanced On-Chip Signal Processing

• Low Dark Current

• Electron-Hole Recombination Antiblooming

• Dynamic Range . . . More Than 70 dB

• High Sensitivity

SUB 1

IAG 2 ABG 3 ADB 4

OUT3 5 OUT2 6 OUT1 7

AMP GND 8

CDB 9 SUB 10

DUAL-IN-LINE PACKAGE

(TOP VIEW)

• High Photoresponse Uniformity

• High Blue Response

NC – No internal connection

• Single-Phase Clocking

• Solid-State Reliability With No Image

Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics

description

The TC245 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W NTSC TV applications. The device is intended to replace a 1/2-inch vidicon tube in applications requiring small size, high reliability, and low cost.

20 SUB 19 IAG 18 ABG 17 SAG 16 SRG3 15 SRG2 14 SRG1 13 NC 12 TRG 11 IDB

The image-sensing area of the TC245 is configured into 242 lines with 786 elements in each line. Twenty-nine elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element. The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements in alternate fields by one-half of a vertical line during the charge integration period, effectively increasing the vertical resolution and minimizing aliasing. The device can also be operated as a 755 (H) by 242 (V) noninterlaced sensor with significant reduction in the dark signal.

A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip converts charge to signal voltage. The signal is further processed by a low-noise, state-of-the-art correlated clamp-sample-and-hold circuit. A low-noise, two-stage, source-follower amplifier buffers the output and provides high output-drive capability . The image is read out through three outputs, each of which reads out every third image column.

The TC245 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark signal, good uniformity , and single-phase clocking. The TC245 is characterized for operation from –10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

Guidelines for Handling

available from Texas Instruments.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

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TC245 786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

functional block diagram

IAG

ADB

Amplifiers

ABG

Top Drain

Image Area With

Blooming Protection

Dark Reference Elements

Storage Area

IAG

ABG

SAG

OUT3

OUT2

OUT1

11 Dummy

Elements

IDB

AMP GND CDB

Multiplexer, Transfer

Gates, and Serial Registers

Clearing Drain

16 15 14

detailed description

The TC245 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area, (3) the multiplexer block with serial registers and transfer gates, and (4) the low-noise signal-processing amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional block diagram.

SRG3 SRG2 SRG1

TRG

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sensor topology diagram

I/O

DESCRIPTION

TC245

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

244 755 + 1/2 + 1/2

1/2

Reverse Transfer Reverse Transfer

11 11

11.5

Dummy Pixels OPB

Effective Imaging Area

2 Lines

252 252

251 + 1/2 + 1/2

Terminal Functions

NAME NO.

†

ABG

†

ABG

ADB 4 I Supply voltage for amplifier drain bias

AMP GND 8 Amplifier ground

CDB 9 I Supply voltage for clearing drain bias

†

IAG

†

IAG

IDB 11 I Supply voltage for input diode bias OUT1 7 O Output signal 1 OUT2 6 O Output signal 2 OUT3 5 O Output signal 3

SAG 17 I Storage-area gate SRG1 14 I Serial-register gate 1 SRG2 15 I Serial-register gate 2 SRG3 16 I Serial-register gate 3

†

SUB

†

SUB

†

SUB

TRG 12 I Transfer gate

†

All pins of the same name should be connected together externally.

3 I Antiblooming gate

18 I Antiblooming gate

2 I Image-area gate

19 I Image-area gate

1 Substrate and clock return 10 Substrate and clock return 20 Substrate and clock return

29 + 1/2

10 10

9.5

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TC245 786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

image-sensing and storage areas

Figure 1 and Figure 2 show cross sections with potential well diagrams and top views of image-sensing and storage-area elements. As light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. During this time, blooming protection is activated by applying a burst of pulses to the antiblooming gate inputs every horizontal blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. After integration is complete, the signal charge is transferred into the storage area.

There are 29 full columns and one half-column of elements at the right edge of the image-sensing area that are shielded from incident light; these elements provide the dark reference used in subsequent video processing circuits to restore the video black level. There are also one full column and one half-column of light-shielded elements at the left edge of the image-sensing area and two lines of light-shielded elements between the image-sensing and image-storage areas (the latter prevent charge leakage from the image-sensing area into the image-storage area).

multiplexer with transfer gates and serial registers

The multiplexer and transfer gates transfer charge line by line from the storage-area columns into the corresponding serial registers and prepare it for readout. Figure 3 illustrates the layout of the multiplexing gate that vertically separates the pixels for input into the serial registers. Figure 4 shows the layout of the interface region between the serial-register gates and the transfer gates. Multiplexing is activated during the horizontal blanking interval by applying appropriate pulses to the transfer gates and serial registers; the required pulse timing is shown in Figure 5. A drain is also included to provide the capability to clear the image-sensing and storage areas of unwanted charge. Such charge can accumulate in the imager during the start-up of operation or under special circumstances when nonstandard TV operation is desired.

correlated clamp-sample-and-hold amplifier with charge-detection nodes

Figure 6 illustrates the correlated clamp-sample-and-hold amplifier circuit. Charge is converted into a video signal by transferring the charge onto a floating diffusion structure in detection node1 that is connected to the gate of MOS transistor Q1. The proportional charge-induced signal is then processed by the circuit shown in Figure 6. This circuit consists of a low-pass filter formed by Q1 and C2, coupling capacitor C1, dummy detection node 2, which restores the dc bias on the gate of Q3, sampling transistor Q5, holding capacitor C3, and output buffer Q6. Transistors Q2, Q4, and Q7 are current sources for each corresponding stage of the amplifier. The parameters of this high-performance signal-processing amplifier have been optimized to minimize noise and maximize the video signal.

The signal processing begins with a reset of detection node 1 and restoration of the dc bias on the gate of Q3 through the clamping function of dummy detection node 2. After the clamping is completed, the new charge packet is transferred onto detection node 1. The resulting signal is sampled by the sampling transistor Q5 and is stored on the holding capacitor C3. This process is repeated periodically and is correlated to the charge transfer in the registers. The correlation is achieved automatically since the same clock lines used in registers φ-S2 and φ-S3 for charge transport serve for reset and sample. The multiple use of the clock lines significantly reduces the number of signals required to operate the sensor. The amplifier also contains an internal voltage reference generator that provides the reference bias for the reset and clamp transistors. The detection nodes and the corresponding amplifiers are located some distance away from the edge of the storage area. Therefore, eleven dummy elements are incorporated at the end of each serial register to span the distance. The location of the dummy elements, which are considered to be part of the amplifiers, is shown in the functional block diagram.

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TC245

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

19.75 µm(V)

8.5 µm(H)

Clocked Barrier

Virtual Barrier Antiblooming Gate

Virtual Well

Clocked Well

Antiblooming

Clocking Levels

Accumulated Charge

Figure 1. Charge-Accumulation Process

φ-PS

Clocked Phase

Virtual Phase

φ-IAG

Light

φ-ABG

Channel Stops

Figure 2. Charge-Transfer Process

Channel Stops

Virtual Well

Clocked Well

Channel Stop

Multiplexing Gate

Clocked

Wells

Serial-Register Gate

Transfer Gate

Figure 3. Multiplexing-Gate Layout Figure 4. Interface-Region Layout

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TC245 786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

Composite

Blanking

ABG

IAG

SAG

TRG

SRG 1

SRG2

SRG3

Blanking Interval

Expanded

Horizontal

Figure 5. Timing Diagram

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Reference Generator

Detection Node 1

CCD Register

Gate

Virtual

Gate

Clocked

TC245

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

ADB

Reset Gate

and

Output

Diode

Detection

Node 2

SRG1

SRG2 SRG3

Figure 6. Correlated Clamp-Sample-and-Hold Amplifier Circuit Diagram

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TC245 786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

spurious nonuniformity specification

The spurious nonuniformity specification of the TC245 CCD grades –10, –20, –30, and –40 is based on several sensor characteristics:

• Amplitude of the nonuniform pixel

• Polarity of the nonuniform pixel

– Black – White

• Location of the nonuniformity (see Figure 7)

– Area A

– Element columns near horizontal center of the area – Element rows near vertical center of the area

– Area B

– Up to the pixel or line border – Up to area A

– Other

– Edge of the imager – Up to area B

• Nonuniform pixel count

• Distance between nonuniform pixels

• Column amplitude

The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in Figure 8. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 9.

Lines

377

Pixels

233

Lines

20 Pixels

Figure 7. Sensor Area Map

18 Pixels

Lines

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DISTANCE

NUMBER

AMPLITUDE

AREA A

AREA B

COUNT‡

(mV)

TC245-30

10080A

TC245-40

PART

NUMBER

(mV)

AREAS

TC245

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

Amplitude

% of Total

Illumination

Figure 8. Pixel Nonuniformity, Figure 9. Pixel Nonuniformity,

Dark Condition Illuminated Condition

The grade specification for the TC245 is as follows (CCD video-output signal is 50 mV ±10 mV): Pixel nonuniformity:

DARK CONDITION ILLUMINATED CONDITION

PART

TC245-20 x > 3.5 0 0 0 0 0 0 x > 5 0 0 — — — —

†

White and black nonuniform pixel pair

‡

The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black pixels in the illuminated condition. The sum of all nonuniform combinations will not exceed the total count.

PIXEL

(mV)

2.5 < x ≤ 3.5 2 5 2 5 2 5 5.0 < x ≤ 7.5 2 5 x > 3.5 0 0 0 0 0 0 x > 7.5 0 0

3.5 < x ≤ 7 3 7 3 7 3 7 7.5 < x ≤ 15 3 7 x > 7 0 0 0 0 0 0 x > 15 0 0

NONUNIFORM PIXEL TYPE WHITE BLACK W/B

, x

AREA AREA AREA

A B A B A B

†

% OF TOTAL

ILLUMINATION

TOTAL

DISTANCE

SEPARATION

X Y AREA

— — —

Column nonuniformity:

PART

NUMBER

TC245-20 x > 0.3 0 0 TC245-30 x > 0.5 0 0 TC245-40 x > 0.7 0 0

COLUMN

AMPLITUDE, x

WHITE BLACK

AREAS AREAS

A AND B

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A AND B

2-9

TC245

SRG1, SRG2, SRG3

‡

SAG

TRG

clock

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage range for ADB, CDB, IDB (see Note 1) 0 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range for ABG, IAG, SAG, SRG, TRG –15 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

–30°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –30°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to the substrate terminal.

recommended operating conditions

MIN NOM MAX UNIT

Supply voltage, ADB 11 12 13 V Substrate bias voltage 0 V

High level 1.5 2 2.5

IAG

Input voltage, V

Clock frequency, f

Capacitive load OUT1, OUT2, OUT3 6 pF Operating free-air temperature, T

‡

The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels.

Adjustment is required for optimal performance.

clock

ABG

IAG, SAG 3.58 SRG1, SRG2, SRG3, TRG 4.77 ABG 2

Intermediate level Low level –11 –9 High level 1.5 2 2.5 Low level –11 –9 High level 2 4 6 Intermediate level Low level –7.5 –7 –6.5 High level 1.5 2 2.5 Low level –11 –9 High level 1.5 2 2.5 Low level –11 –9

–5.7

–2.3

MHz

–10 45 °C

†

2-10

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TC245

Noi

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

electrical characteristics over recommended operating range of supply voltage, TA = –10°C to 45°C

PARAMETER MIN TYP

Dynamic range (see Note 2) Antiblooming disabled (see Note 3) 60 70 dB Charge conversion factor 3.8 4 4.2 µV/e Charge transfer efficiency (see Note 4) 0.99990 0.99995 1 Signal response delay time, τ (see Note 5 and Figure 13) 18 20 22 ns Gamma (see Note 6) 0.97 0.98 0.99 Output resistance 700 800 Ω

se voltage

Noise equivalent signal 30 electrons

Rejection ratio at 4.77 MHz SRG1, SRG2, SRG3 (see Note 8) 40 dB

Supply current 5 mA

Input capacitance, C

†

All typical values are at TA = 25 °C

NOTES: 2. Dynamic range is –20 times the logarithm of the mean noise signal divided by the saturation output signal.

3. For this test, the antiblooming gate must be biased at the intermediate level.

4. Charge transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal.

5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state.

6. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this value represents points near saturation):

7. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.

8. SRGn rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn.

9. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.

1/f noise (5 kHz) 0.1 Random noise (f = 100 kHz) 0.08

ADB (see Note 7) 20

ABG (see Note 9) 20

IAG 6500 SRG1, SRG2, SRG3 68 ABG 2400 pF TRG 180 SAG 6800

Exposure (2)

Exposure (1)

Output signal (2)

Output signal (1)

†

MAX UNIT

µV/√Hz

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2-11

TC245

itivit

Measured at V

V/l

13)

Dark si

16)

45°C

Pixel

Output si

±10 mV

Col

Output si

±10 mV

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

optical characteristics, TA = 40°C, integration time = 16.67 ms (unless otherwise noted)

PARAMETER MIN TYP MAX UNIT

ens

Saturation signal, V Maximum usable signal, V

ooming overload ratio (see Note

Image-area well capacity 80 x 10 Smear (see Note 14) See Note 15 0.0004 Dark current Interlace off TA = 21°C 0.027 nA/cm

gnal (see Note

uniformity

umn uniformity

Shading Output signal = 100 mV 15%

NOTES: 10. Sensitivity is measured at an integration time of 16.67 ms with a source temperature of 2856 K. A CM-500 filter is used.

11. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.

12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.

13. Blooming overload ratio is the ratio of blooming exposure to saturation exposure.

14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the image- area vertical height with recommended clock frequencies.

15. Exposure time is 16.67 ms, the fast-dump clocking rate during vertical timing is 3.58 MHz, and the illuminated section is 1/10 of the height of the image section.

16. Dark-signal level is measured from the dummy pixels.

(see Note 12) Antiblooming disabled, interlace off 320 mV

sat

use

No IR Filter With IR Filter

Antiblooming enabled, interlace on 180 mV

gnal = 50 mV

Measured at V (see Notes 10 and 11)

Interlace on 100 Interlace off 200

TC245-30 5.5 TC245-40 6 TC245-30 3.5 TC245-40 5 TC245-30 0.5 TC245-40 0.7

197

electrons

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786- × 488-PIXEL CCD IMAGE SENSOR

PARAMETER MEASUREMENT INFORMATION

TC245

SOCS019A – DECEMBER 1991

sat (min)

use (max)

use (typ)

DR (dynamic range) Vn = noise floor voltage

sat (min)

use (max)

use (typ)

NOTES: A. V

= minimum saturation voltage

= maximum usable voltage

= typical user voltage (camera white clip)

use (typ)

B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the V

the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.

Blooming Point With Antiblooming

Blooming Point With Antiblooming Disabled

Level Dependent

Upon Antiblooming

Gate High Level

camera white clip voltage

is defined as the voltage determined to equal the camera white clip. This voltage must be less than V

Enabled

Dependent On

Well Capacity

Lux (light input)

use (max)

use (typ)

Figure 10. Typical V

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sat

, V

Relationship

use

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TC245 786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

PARAMETER MEASUREMENT INFORMATION

VIH min

Intermediate Level

VIL max

Slew rate between 10% and 90% = 70 to 120 V/µs, tr = 150 ns, tf = 90 ns.

100%

90%

10%

Figure 11. Typical Clock Waveform for IAG, ABG and SAG

VIH min

VIL max

100%

90%

10%

Slew rate between 10% and 90% = 300 V/µs, tr = tf = 15 ns.

Figure 12. Typical Clock Waveform for SRG and TRG

SRG

OUT

90%

100%

CCD Delay

Sample

and

Hold

– 9 V

Figure 13. SRG and CCD Output Waveforms

1.5 V to 2.5 V

– 9 V to –11 V

15 ns10 ns

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TYPICAL CHARACTERISTICS

CCD SPECTRAL RESPONSIVITY

TC245

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

100 60

50 40 30

0.1

0.01

Responsivity – A/W

0.001

= 12 V, TA = 25°C

ADB

No IR Filter Light Power = 1.5 µW/cm Light Box: Canon SA702

400 500 600 1000 1100

300

Incident Wavelength – nm

700 800 900

Figure 14

5 3

Quantum Efficiency – %

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TC245 786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

APPLICATION INFORMATION

IALVL

ABG+

TMS3473B

IALVL

I/N

3 4 5 6 7 8

1 2 3 4 5 6 7 8

IAIN ABIN MIDSEL

SAIN PD GND V V

SEL0OUT GND PD SRG3IN SRG2IN SRG1IN TRGIN NC SEL1OUT

ABG+

Parallel Driver

SN28846

SRG3OUT SRG2OUT

SRG1OUT

Serial Driver

ABSR

ABLVL

IAOUT ABOUT SAOUT

TRGOUT

IASR

ABG–

SEL0

SEL1V

22 kΩ

ABLVL

ABG –

20 pF

47 kΩ

TC245

SUB

IAG

ABG

SAG

SRG3

SRG2

SEG1

TRG

IDB

ABIN

MODE

GND

AMP GND

Image Sensor

VCC

HGATE

CLK2M

SH1

SUB

IAG ABG ADB

OUT3 OUT2 OUT1

CDB SUB

VGATE

NTSC Timer

GT3/SH2

18 17

16 15 14 13 12

19 18

16 15 14 13 12

1 2 3 4 5 6 7 8 9 10

VD2

WHTA

SN28835

GT2

GT1/SH3

VCR

ADB

VCCV

HCR

4.7 µF

VDS

4.7 µF

GPS

E/L

4.7 µF

SC(90)

CSYNC

1213141516171819202122

HIGH ABS1

ABS0

CBLK

CP1 CP2

BCP2 BCP1

4443424140393837363534

SC BF

100 Ω

ANLG V

AIN1

CIN1

AIN2

CIN2

AIN3

CIN3

ANLG GND

11 10

9 8 7 6 5 4 3 2 1

DC VOLTAGES

ADB V

V ABLVL IALVL V

ABG+

ABG–

TL1593

DIG V

DGTL GND

Sample-and-Hold

S/H1 S/H2 S/H

OUT1 OUT2

OUT3

12 V

5 V

–10 V

2 V

–2.5 V

–5 V

4 V

–6 V

16 15 14 13 12 OUT3 11 OUT2 10 OUT1

Oscillator

14.3-MHz

15 pF

SUPPORT CIRCUITS

DEVICE PACKAGE APPLICATION FUNCTION

SN28835FS 44 pin flatpack T iming generator NTSC timing generator (CCD, S/H, processing) SN28846DW 20 pin small outline Serial driver Driver for TRG, SRG1, SRG2, SRG3 TMS3473BDW 20 pin small outline Parallel driver Driver for IAG, SAG, ABG TL1593CNS 16 pin small outline (EIAJ) Sample and hold Three-channel sample-and-hold IC

Figure 15. Typical Application Circuit Diagram

2-16

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TC245

786- × 488-PIXEL CCD IMAGE SENSOR

SOCS019A – DECEMBER 1991

MECHANICAL DAT A

The package for the TC245 consists of a ceramic base, a glass window, and a 20-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and fit into mounting holes with 1,78 mm (0.070 in) center-to-center spacings.

TC245 (20 pin)

Index Mark

6,50 (0.256) 6,10 (0.240)

Optical

Center

Package

Center

Focus Plane

7,60 (0.299) 7,20 (0.283)

Rotation ±90°

15,14 (0.596)

14,84(0.584)

13,87 (0.546) 13,67 (0.538)

18,30 (0.720)

MAX

15,64 (0.616) 15,44 (0.608)

1,78 (0.070) 0,76 (0.030)

3,38(0.133)

2,72 (0.107)

4,01 (0.158) MAX

1,91 (0.075) 1,65 (0.065)

0,51 (0.020) 0,41 (0.016)

5,50 (0.217) 3,90 (0.154)

1,70 (0.067) 1,10 (0.043)

15,54 (0.612) 14,94 (0.588)

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

NOTES: A. The center of the package and the center of image area not coincident.

B. The distance from the top of the glass to the image sensor surface is typically 1 mm (0.04 inch). The glass is 0.95 ±0.08 mm thick

and has an index of refraction of 1.53. C. Each pin centerline is located within 0.18 mm of its true longitudinal position. D. Maximum rotation of the sensor within the package is 1.5°.

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0,33 (0.013) 0,17 (0.007)

7/94

2-17

SOCS019A – DECEMBER 1991

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IMPORTANT NOTICE

T exas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current.

TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.

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TEXAS INSTRUMENTS TC245 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual