Datasheet TC213-50, TC213-40, TC213-30 Datasheet (Texas Instruments)

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

Copyright  1991, Texas Instruments Incorporated

2-1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• High-Resolution, Solid-State

Frame-Transfer Image Sensor

• 13.5-mm Image-Area Diagonal

• 1000 (H) × 510 (V) Active Elements in

Image-Sensing Area

• Square Pixels

• Low Dark Current

• Electron-Hole Recombination Antiblooming

• Dynamic Range . . . More Than 60 dB

• High Sensitivity

• High Photoresponse Uniformity

• High Blue Response

• Single-Phase Clocking

• Solid-State Reliability With No Image

Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics

description

The TC213 is a frame-transfer charge-coupled device (CCD) image sensor that provides very high-resolution
image acquisition for image-processing applications such as robotic vision, medical X-ray analysis, and
metrology . The image format measures 12.00 mm horizontally by 6.12 mm vertically; the image-area diagonal
is 13.5 mm. The image-area pixels are 12-µm square. The image area contains 510 active lines with 1000 active
pixels per line. Two additional dark reference lines give a total of 512 lines in the image area, and 24 additional
dark-reference pixels per line give a total of 1024 pixels per horizontal line.

The storage section of the TC213 contains 512 lines with 1024 pixels per line. This area is protected from
exposure to light by an aluminum light shield. Photoelectric charge that is generated in the image area of the
TC213 can be transferred into the storage section in less than 500 µs. After image capture (integration time),
the readout is accomplished by transferring the charge, one line at a time, into two serial registers located below
the storage area, each of which contains 512 data elements and 12 dummy elements. One serial-register clocks
out charge that is generated in the odd-numbered columns of pixels in the imaging area; the other serial-register
processes charge from the even-numbered columns of the imaging area. The typical serial-register data rate
is 10 megapixels per second. Three transfer gates are used to isolate the serial registers. If the storage area
or storage and image areas need to be cleared of all charge, charge may be quickly transferred across the serial
registers and into the clearing drain, which is located below the serial-register section.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication

Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies

available from Texas Instruments.

TRG

SRG2

SRG1

CDB

RST1

RST2

SUB

ADB

OUT2

AMP GND

OUT1

SAG

ABGI

IAG

SUB

SUB

TDB

SUB

IAG

ABGI

SAG

ABGS

24
23
22
21
20
19
18
17
16
15

11

10

9

8

7

6

5

4

3

2

1

DUAL-IN-LINE PACKAGE

(TOP VIEW)

IDB ABGS

1312

14

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description (continued)

Gated floating-diffusion detection structures are used with each serial register to convert charge to signal
voltage. External resets allow the application of off-chip correlated clamp sample-and-hold amplifiers for
low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise,
two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per
second when combined off chip. An output of 30 frames per second with one field per frame is typical. At room
temperature, the readout noise is 55 elecrons and a minimum dynamic range of 60 dB is available.

The blooming protection incorporated into the sensor is based on recombining excess charge with charge of
opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the
antiblooming gate, which is an integral part of each image-sensing element. The storage area antiblooming gate
is clocked only for charge transfer in normal use.

The TC213 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark signal, good uniformity, and single-phase clocking.

The TC213 is characterized for operation from –10°C to 40°C.

functional block diagram

24 Dark Reference Elements

Clearing Drain

Amplifiers

OUT1

OUT2

RST2

IAG

TDB

19

21

6

3

1

2

AMP GND

CDB

8

SRG2
SRG1

TRG

IDB

11

9

10

ABGS

13

SAG

ABGI

14

15

Blooming Protection

Image Area With

Top Drain

12 Dummy
Elements

Multiplexer, Transfer Gates,

and Serial Registers

12

IAG

16

ADB

4

ABGI

22

RST1

7

SAG

23

ABGS

24

Storage Area

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

sensor topology diagram

22 Pixels

1000 Pixels

2 Lines

12

Dummy Pixels

511

12 511

512 Lines

1 Pixel

1 Pixel

510 Lines

Terminal Functions

TERMINAL

NAME NO.

I/O

DESCRIPTION

ABGI

†

15 I Antiblooming gate for image area

ABGI

†

22 I Antiblooming gate for image area

ABGS

†

13 I Antiblooming gate for storage area

ABGS

†

24 I Antiblooming gate for storage area

ADB 4 I Supply voltage for amplifier drain bias

AMP GND 2 Amplifier ground

CDB 8 I Supply voltage for clearing drain bias

IAG

†

16 I Image-area gate

IAG

†

21 I Image-area gate

IDB 12 I Supply voltage for input diode bias
OUT1 1 O Output signal 1
OUT2 3 O Output signal 2
RST1 7 I Reset gate 1
RST2 6 I Reset gate 2
SAG

†

14 I Storage-area gate

SAG

†

23 I Storage-area gate
SRG1 9 I Serial-register gate 1
SRG2 10 I Serial-register gate 2
SUB

†

5 Substrate and clock return

SUB

†

17 Substrate and clock return
SUB

†

18 Substrate and clock return
SUB

†

20 Substrate and clock return

TDB 19 I Supply voltage for top drain bias

TRG 11 I Transfer gate

†

All pins of the same name should be connected together externally (i.e., pin 15 to pin 22,
pin 13 to pin 24, etc.).

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

detailed description

The TC213 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer block with serial registers and transfer gates, and (4) the low-noise signal-processing
amplifier block with charge-detection nodes. The location of each of these blocks is identified in the functional
block diagram.

image-sensing and image-storage areas

Figures 1 and 2 show cross sections with potential well diagrams and top views of image-sensing elements. As
light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential
wells of the sensing elements. During this time, blooming protection is activated by applying a burst of pulses
to the antiblooming gate inputs every horizontal blanking interval. This prevents blooming caused by the spilling
of charge from overexposed elements into neighboring elements. After integration is complete, the signal
charge is transferred into the storage area (see Figure 5).

There are 24 full columns of elements at the left edge of the image-sensing area that are shielded from incident
light; these elements provide the dark reference used in subsequent video-processing circuits to restore the
video black level. There are also two dark lines at the bottom of the image-sensing area that prevent charge
leakage from the image-sensing area into the image-storage area.

multiplexer with transfer gates and serial registers

The multiplexer and transfer gates transfer charge line by line from the image-storage area columns into the
corresponding serial registers and prepare it for readout. Figure 3 illustrates the layout of the multiplexing gate
that vertically separates the pixels for input into the serial registers. Figure 4 shows the layout of the interface
region between the serial-register gates and the transfer gates. Multiplexing is activated during the horizontal
blanking interval by applying appropriate pulses to the transfer gates and serial registers; the required pulse
timing is shown in Figure 6. A drain is also included to provide the capability to clear the image-sensing area
of unwanted charge. Such charge can accumulate in the imager during the start-up of operation or under special
circumstances when nonstandard timing is desired. The clear timing is given as part of the parallel-transfer
timing in Figure 5.

serial-register readout and video processing

After transfer into the serial registers, the pixels are normally read out 180° out of phase (see Figure 7). Each
serial register must be reset to the reference level before the next pixel is read out. The timing for the resets and
their relationships to the serial-register pulses is shown in Figure 8. Figure 8 also shows the timing for the pixel
clamp and sample and hold needed for an off-chip double-correlated sampling circuit. These two output signals
can provide a data rate of 20 million pixels per second when combined off chip. After the charge is placed on
the detection node, it is buffered and amplified by a low-noise, dual-stage source follower . Each serial register
contains 12 dummy elements that are used to span the distance between the serial register and the output
amplifier. A schematic is shown in Figure 9. The location of the dummy elements, which are considered to be
part of the amplifiers, is shown in the functional block diagram. Figure 10 gives the timing for a single frame of
video. An output of 30 frames per second with one field per frame is typical.

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-5

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

φ-ABG

φ-IAG

12 µm(H)

Clocked Barrier

Virtual Barrier
Antiblooming Gate

Virtual Well

Clocked Well

Light

Antiblooming

Clocking Levels

Accumulated Charge

12 µm(V)

Figure 1. Charge-Accumulation Process

φ-PS

Channel Stops

Virtual Phase

Clocked Phase

Figure 2. Charge-Transfer Process

Gate

Transfer

Gate

Register

Serial-

Wells

Clocked

Channel Stops

Channel
Stop

Virtual
Well

Clocked
Well

Multiplexing
Gate

Figure 3. Multiplexing-Gate Layout Figure 4. Interface-Region Layout

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

High

High

RST2

RST1

SRG2

†

SRG1

†

TRG

ABGI

SAG

IAG

Line 512

Line 511Line 2Line 1

1 µs

ABGS

Intermediate

Intermediate

Low

High

†

SRG1 and SRG2 pulses are extended to equal TRG and SAG pulse widths during parallel transfers from the storage area to the
clearing drain.

Figure 5. Parallel-Transfer Timing

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

CPOB2

CPOB1

ABGS

SAG

Low

Low

Low

SH2

SH1

CL2

Low

High

High

CL1

RST2

RST1

SRG2

†

SRG1

†

TRG

CBLNK

CSYNC

Intermediate

ABGI

Low

IAG

†

SRG1 and SRG2 pulses are extended to equal TRG and SAG pulse widths during horizontal line transfer operation for readout.

Figure 6. Horizontal Timing

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

SRG1

SRG2

ImageBlack ReferenceDummy

12 1 2 312 1 212 3

3211211211211321

NOTE A: A minimum of 524 clock pulses is required to transfer out all elements of a serial register. Overclocking is recommended.

Figure 7. Start of Serial-Transfer Timing

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-9

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

SH2

CL2

OUT2

RST2

SRG2

SH1

CL1

OUT1

RST1

SRG1

OUT

SHCLRSTSRG

Clamp

Pixel

BufferCCD

Amplifier

and-Hold

Sample-

NOTE A: The video-processing (off-chip) pulses are defined as follows:

CL1 = Clamp pulse for video from OUT1
CL2 = Clamp pulse for video from OUT2
SH1 = Sample pulse for the sample-and-hold amplifier for video 1
SH2 = Sample pulse for the sample-and-hold amplifier for video 2
CSYNC = Composite video-sync pulse
CBLNK = Composite video-blanking pulse
CPOB1 = Dark-reference clamp pulse for video from OUT1
CPOB2 = Dark-reference clamp pulse for video from OUT2

Figure 8. Video-Process Timing

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-10

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

OUTn

ADB

SRGn

Two-Stage
Source­Follower
Amplifier

Reset Gate
and
Output Diode

Detection Node

CCD Register

Virtual
Gate

Clocked
Gate

Reference Generator

RSTn

Figure 9. Buffer Amplifier and Charge-Detection Node

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-11

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

CBLNK

RST2

RST1

ABGS

ABGI

SRG2

SRG1

TRG

SAG

IAG

512 Pulses541 Pulses

Timing

Vertical

Timing

Horizontal

Figure 10. Clock Timing Requirements – Continuous Mode

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-12

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

spurious nonuniformity specification

The spurious nonuniformity specification of the TC213 CCD grades –30 and –40 is based on several sensor
characteristics:

• Amplitude of the nonuniform line or pixel

• Polarity of the nonuniform pixel

– Black
– White

• Nonuniform line or pixel count

The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 1 1. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 12.

The pixel nonuniformity specification for the TC213 is as follows (CCD video-output signal is 50 mV ±10 mV):

NONUNIFORMITY TYPE TC213-30 TC213-40

Maximum amplitude = 1.4 mV

Line

Number with amplitude greater than 1 mV is ≤ 6

White spot (40°C) Maximum amplitude = 25 mV

Maximum amplitude = 8 mV Maximum amplitude = 12 mV

White spot (25°C)

Number with amplitude greater
than 6 mV = B

Number with amplitude greater
than 10 mV = B

Maximum amplitude = 20% Maximum amplitude = 25%

Black spot (% of total illumination)

Number with amplitude greater
than 10% = C

Number with amplitude greater
than 15% = C

Total number of nonuniformities B+C < 11 B+C < 51

mV

Amplitude

t

Illumination

% of Total

t

Figure 11. Pixel Nonuniformity, Figure 12. Pixel Nonuniformity,

Dark Condition Illuminated Condition

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-13

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

†

Supply voltage range for ADB, CDB, IDB, TDB (see Note 1) 0 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range for ABGI, ABGS, IAG, RST1, RST2, SAG, SRG1, SRG2, TRG –15 V to 15 V. . . . . . . .

Operating free-air temperature range, T

A

–10°C to 40°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –30°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to the substrate terminal.

recommended operating conditions

MIN NOM MAX UNIT

Supply voltage for ADB, CDB, IDB, TDB 11 12 13 V
Substrate bias voltage 0 V

High level 1.5 2 2.5

IAG

Low level –11 –9
High level 1.5 2 2.5

SAG

Low level –11 –9
High level 1.5 2 2.5

SRG

Low level –11 –9

Input voltage, V

I

‡

High level 1.5 2 2.5

V

I

RST1, RST2

Low level –11 –9
High level (ABGI only) 5 5.5 6

ABGI, ABGS

Intermediate level

§

–1.5 –1.2 – 0.9
Low level –7.5 –7 –6.5
High level 1.5 2 2.5

TRG

Low level –11 –9

RST1, RST2, SRG1, SRG2, TRG 10

Clock frequency, f

clock

IAG, SAG 1 MHz

ABGI, ABGS 1
Capacitive load OUT1, OUT2 8 pF
Operating free-air temperature, T

A

–10 40 °C

‡

The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.

§

Adjustment is required for optimal performance.

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-14

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics over recommended operating ranges of supply voltage and free-air
temperature

PARAMETER MIN TYP

†

MAX UNIT

Dynamic range (see Note 2) 60 dB
Charge conversion factor 6 µV/e
Charge transfer efficiency (see Note 3) 0.99990
Signal response delay time, τ (see Note 4 and Figure 16) 18 20 22 ns
Gamma (see Note 5) 0.89 0.94 0.99
Output resistance 600 800 Ω

1/f noise (5 kHz) 0.1

Noise voltage

Random noise (f = 100 kHz) 0.08

µV/√Hz

Noise equivalent signal 60 electrons

ADB (see Note 6) 20

Rejection ratio at 10 MHz SRGn (see Note 7) 40 dB

ABGx (see Note 8) 30

Supply current 9 mA

IAG, SAG 15000

p

p

ABGI, ABGS 8000

p

Input capacitance, C

i

TRG 350

pF

SRG1, SRG2 200

†

All typical values are at TA = 25°C.

NOTES: 2. Dynamic range is –20 times the logarithm of the mean noise signal divided by the saturation output signal.

3. Charge transfer efficiency is one minus the charge loss per transfer in the output register (1046 transfers). The test is performed
in the dark using an electrical input signal.

4. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state.

5. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this
value represents points near saturation):

ǒ

Exposure (2)
Exposure (1)

Ǔ

g

+

ǒ

Output signal (2)
Output signal (1)

Ǔ

6. ADB rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ADB.

7. SRGn rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on SRGn.

8. ABGx rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ABGx.

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

optical characteristics, TA = 25°C, integration time = 33 ms (unless otherwise noted)

PARAMETER MIN TYP MAX UNIT

No IR filter

Measured at V

518

Sensitivity (see Note 9)

With IR filter

U

(see Note 10)

64

mV/l

x

Saturation signal, V

sat

(see Note 11) 320 mV

Maximum usable signal, V

use

200 mV
Blooming overload ratio (see Note 12) 100
Image-area well capacity 60 x 10

3

electrons

Smear (see Note 13) 0.0016
Dark current TA = 21°C 0.027 nA/cm

2

°

TC213-30 5

Dark signal (see Note 14)

T

A

=

40°C

TC213-40 5

mV

TC213-30 8

Pixel uniformit

y

TC213-40 12

mV

TC213-30 1.4

Column uniformit

y

TC213-40 1.4

mV

Shading VO = 1/2 VU (see Note 10) 15%

NOTES: 9. Sensitivity is measured at an integration time of 33 ms with a source temperature of 2859 K. A CM-500 filter is used. Sensitivity is

measured at any illumination level that gives an output voltage level less than VU.

10. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.

11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.

12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio
is the ratio of blooming exposure to saturation exposure.

13. Smear is the measure of error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image area vertical height with recommended clock frequencies. Exposure time is 33 ms, the fast dump clocking rate during vertical
timing is 1 MHz, and the illuminated section is 1/10 of the height of the image section.

14. Dark-signal level is measured from the dark dummy pixels.

timing requirements

MIN MAX UNIT

IAG 200
SRG 10
SAG 200

trRise time

TRG 200

ns

ABGI, ABGS 100
RST1, RST2 10
IAG 200
SRG 10
SAG 200

tfFall time

TRB 200

ns

ABGI, ABGS 100
RST1, RST2 10

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

DR (dynamic range)

+

camera white clip voltage

V

n

Vn = noise floor voltage
V

sat (min)

= minimum saturation voltage

V

use (max)

= maximum usable voltage

V

use (typ)

= typical user voltage (camera white clip)

(light input)

Lux

Enabled

With Antiblooming

Blooming Point

Well Capacity

Dependent On

Disabled

With Antiblooming

Blooming Point

Gate High Level

Upon Antiblooming

Level Dependent

DR

V

n

V

sat (min)

V

use (typ)

V

use (max)

V

O

NOTES: A. V

use (typ)

is defined as the voltage determined to equal the camera white clip. This voltage must be less than V

use (max)

.

B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the V

use (typ)

,

the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.

Figure 13. Typical V

sat

, V

use

Relationship

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

t

f

t

r

0%

VIL max

10%

Intermediate Level

VIH min

90%

100%

Figure 14. T ypical Clock Waveform for ABGI, ABGS, IAG, and SAG

t

f

t

r

0%

VIL max

10%

VIH min

90%

100%

Intermediate Level

Figure 15. T ypical Clock Waveform for RST1, RST2, SRG1, SRG2, and TRG

100%

90%

OUT

SRG

– 9 V

0%

– 9 V to –11 V

1.5 V to 2.5 V

CCD Delay

τ

15 ns10 ns

Sample

and

Hold

Figure 16. SRG and OUT Waveforms

TC213
1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

13

12 V

TC213

ABGS

SAG

ABGI

IAG

SUB

SUB

TDB

SUB

IAG

ABGI

SAG

ABGS

IDB

TRG

SRG2

SRG1

CDB

RST1

RST2

SUB

ADB

OUT2

AMP GND

OUT1

12 V

OUT 2

1 kΩ

100 Ω

OUT 1

12 V

13

14

15

16

17

18

19

20

21

22

23

24

12

11

10

9

8

7

6

5

4

3

2

1

Master Oscillator

GND

V

CC

GND

OUT V

CC

V

SS

User-Defined Timer

SRG2

SRG1

RST1

RST2

SAG

GT2

ABGS

GT1

ABGI

IAG

TRG

SH1

SH2

CSYNC

CL1

CL2

CBLNK

CLK

SH1

SH2

CL1

CL2

CBLNK

SEL0OUT
GND
PD
SRG3IN
SRG2IN
SRG1IN
TRGIN
NC
SEL1OUT

SEL0

NC

V

CC

SRG3OUT
SRG2OUT
SRG1OUT

TRGOUT

V

CC

SEL1

V

CC

V

CC

SEL1

V

CC

TRGOUT

SRG1OUT

SRG2OUT

SRG3OUT

V

CC

NC

SEL0

SEL1OUT

NC

TRGIN

SRG1IN

SRG2IN

SRG3IN

PD

GND

SEL0OUT

1
2
3
4
5
6
7
8
9

19
18
17
16
15
14
13
12
11

11

12

13

14

15

16

17

18

19

9

8

7

6

5

4

3

2

1

IALVL
I

/N
IAIN
ABIN
MIDSEL
SAIN
PD
GND
V

AGB+

IASR

ABSR

V

CC

ABLVL

IAOUT
ABOUT
SAOUT

V

CC

V

ABG–

1
2
3
4
5
6
7
8
9

19
18
17
16
15
14

12
11

ABLVL

V

ABG–

V

V

CC

V

ABG+

V

ABG+

V

CC

V

V

ABG–

ABLVL

11

12

13

14

15

16

17

18

19

9

8

7

6

5

4

3

2

1

V

ABG–

V

CC

SAOUT

ABOUT

IAOUT

ABLVL

V

CC

ABSR

IASR

V

AGB+

GND

PD

SAIN

MIDSEL

ABIN

IAIN

I

/N

IALVL

V

100

Ω

Parallel Driver

1 kΩ

ADB
V

CC

V

SS

V
ABLVL
V

ABG+

V

ABG–

12 V

5 V

–10 V

2 V

–2.5 V

4 V

–6 V

DC VOLTAGES

V

SS

10

20

V

SS

V

SS

10

V

SS

20

V

SS

10

V

SS

20

10

V

SS

V

SS

20

CSYNC

2N3904

2N3904

12 V

TMS3473B

Parallel Driver

TMS3473B

Serial Driver

SN28846

Serial Driver

SN28846

Image Sensor

SUPPORT CIRCUITS

DEVICE PACKAGE APPLICATION FUNCTION

SN28846DW 20 pin small outline Serial driver Driver for TRG, SRG1, SRG2, RST1, RST2
TMS3473BDW 20 pin small outline Parallel driver Driver for IAG, SAG, ABGI, ABGS

Figure 17. Typical Application Circuit Diagram

TC213

1024- × 512-PIXEL CCD IMAGE SENSOR

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-19

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

MECHANICAL DATA

The package for the TC213 consists of a ceramic base, a glass window, and a 24-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
fit into mounting holes with 2,54 mm (0.1 in) center-to-center spacings.

T.P.

30,91 (1.217)
30,05 (1.183)

2,54 (1.000)

2,67 (0.105) NOM

2,00 (0.079)

NOM DIA

12,50 (0.492) NOM

6,80 (0.268)
5,80 (0.228)

Optical
Center

22,83 (0.899)
22,38 (0.881)

+0.01

(+0.0004)

20,93 (0.824)
20,83 (0.820)

1,40 (0.055)
0,64 (0.025)

6,30 (0.248)
4,70 (0.185)

2,54 (0.100)

20,93 (0.824)
20,83 (0.820)

4,93 (0.194) MAX

3,81 (0.150) NOM

0,33 (0.013)
0,17 (0.007)

23,29 (0.917)
22,43 (0.883)

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

3,75 (0.148)
2,75 (0.108)

Package Center

(see Note C)

7/94

NOTES: A. Each pin centerline is located within 2,54 mm (0.1 inch) of its true longitudinal position.

B. The optical center line and the center line of the ceramic package are not coincident.
C. Maximum rotation is ±3.5°.

SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991

2-20

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

IMPORTANT NOTICE

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any product or service without notice, and advise customers to obtain the latest version of relevant information
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pertaining to warranty, patent infringement, and limitation of liability.

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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.

CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
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In order to minimize risks associated with the customer’s applications, adequate design and operating
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Copyright  1998, Texas Instruments Incorporated