0 30 2 4 6 8 10 12 14 16 18 20 22 24 26 28
8
Ω
6
Ω
4
Ω
T =75°C
THD+Nat10%
C
P Output Po
wer
W
O
– –
PVDD – SupplyVoltage – V
0
130
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
TAS5342
www.ti.com
1
FEATURES
23
• Total Power Output (Bridge Tied Load)
– 2 × 100 W at 10% THD+N Into 4 Ω
– 2 × 80 W at 10% THD+N Into 6 Ω
– 2 × 65 W at 10% THD+N Into 8 Ω
• Total Power Output (Single Ended)
– 4 × 40 W at 10% THD+N Into 3 Ω
– 4 × 30 W at 10% THD+N Into 4 Ω
• Total Power Output (Parallel Mode)
– 1 × 200 W at 10% THD+N Into 2 Ω
– 1 × 160 W at 10% THD+N Into 3 Ω
• >110 dB SNR (A-Weighted With TAS5518
Modulator)
• <0.1% THD+N (1 W, 1 kHz)
• Supports PWM Frame Rates of 192 kHz to
432 kHz
• Resistor-Programmable Current Limit
• Integrated Self-Protection Circuitry, Including:
– Under Voltage Protection
– Overtemperature Warning and Error
– Overload Protection
– Short-Circuit Protection
– PWM Activity Detector
• Standalone Protection Recovery
• Power-On Reset (POR) to Eliminate System
Power-Supply Sequencing
• High-Efficiency Power Stage (>90%) With
80-m Ω Output MOSFETs
• Thermally Enhanced Package 44-Pin HTSSOP
(DDV)
• Error Reporting, 3.3-V and 5.0-V Compliant
• EMI Compliant When Used With
Recommended System Design
APPLICATIONS
• Mini/Micro Audio System
• DVD Receiver
• Home Theater
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 PurePath Digital, PowerPad are trademarks of Texas Instruments.
3 All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
100 W STEREO DIGITAL AMPLIFIER POWER STAGE
DESCRIPTION
The TAS5342 is a high-performance, integrated
stereo digital amplifier power stage designed to drive
a 4- Ω bridge-tied load (BTL) at up to 100 W per
channel with low harmonic distortion, low integrated
noise, and low idle current.
The TAS5342 has a complete protection system
integrated on-chip, safeguarding the device against a
wide range of fault conditions that could damage the
system. These protection features are short-circuit
protection, over-current protection, under voltage
protection, over temperature protection, and a loss of
PWM signal (PWM activity detector).
A power-on-reset (POR) circuit is used to eliminate
power-supply sequencing that is required for most
power-stage designs.
PurePath Digital™
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
BTL OUTPUT POWER
vs
SUPPLY VOLTAGE
Copyright © 2007, Texas Instruments Incorporated
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
GVDD_B
OTW
NC
NC
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
NC
NC
VDD
GVDD_C
DDV PACKAGE
(TOP VIEW)
GVDD_A
BST_A
NC
PVDD_A
PVDD_A
OUT_A
GND_A
GND_B
OUT_B
PVDD_B
BST_B
BST_C
PVDD_C
OUT_C
GND_C
GND_D
OUT_D
PVDD_D
PVDD_D
NC
BST_D
GVDD_D
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
P0016-02
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
GENERAL INFORMATION
Terminal Assignment
The TAS5342 is available in a thermally enhanced package 44-pin HTSSOP PowerPad™ package (DDV)
This package contains a thermal pad that is located on the top side of the device for convenient thermal coupling
to the heatsink.
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Product Folder Link(s): TAS5342
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
Protection MODE Selection Pins
Protection modes are selected by shorting M1, M2, and M3 to VREG or GND.
MODE PINS
M3 M2 M1
Mode Name PWM Input
0 0 0 BTL mode 1 2N All protection systems enabled
0 0 1 BTL mode 2 2N Latching shudown on, PWM activity detector and OLP disabled
0 1 0 BTL mode 3 1N All protection systems enabled
0 1 1 PBTL mode 1N / 2N
1 0 0 SE mode 1 1N All protection systems enabled
1 0 1 SE mode 2 1N Latching shudown on, PWM activity detector and OLP disabled
1 1 0
1 1 1
(1) The 1N and 2N naming convention is used to indicate the number of PWM lines to the power stage per channel in a specific mode.
(2) PWM_D is used to select between the 1N and 2N interface in PBTL mode (Low = 1N; High = 2N). PWM_D is internally pulled low in
PBTL mode. PWM_A is used as the PWM input in 1N mode and PWM_A and PWM_B are used as inputs for the 2N mode.
(3) PPSC detection system disabled.
(1)
(2)
Description
All protection systems enabled
(3)
Reserved
(3)
Package Heat Dissipation Ratings
PARAMETER TAS5342DDV
R
( ° C/W) — 2 BTL or 4 SE channels 1.3
θ JC
R
( ° C/W) — 1 BTL or 2 SE channel(s) 2.6
θ JC
R
( ° C/W) — 1 SE channel 5.0
θ JC
Power Pad area
(1) JC is junction-to-case, CH is case-to-heatsink.
(2) R
is an important consideration. Assume a 2-mil thickness of high performance grease with a thermal conductivity at 2.5W/m-K
θ CH
between the pad area and the heat sink. The R
(1)
(2)
with this condition is 0.6 ° C/W for the DDV package.
θ CH
2
36 mm
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TAS5342
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
VDD to AGND – 0.3 V to 13.2 V
GVDD_X to AGND – 0.3 V to 13.2 V
PVDD_X to GND_X
OUT_X to GND_X
BST_X to GND_X
BST_X to GVDD_X
VREG to AGND – 0.3 V to 4.2 V
GND_X to GND – 0.3 V to 0.3 V
GND_X to AGND – 0.3 V to 0.3 V
GND to AGND – 0.3 V to 0.3 V
PWM_X, OC_ADJ, M1, M2, M3 to AGND – 0.3 V to 4.2 V
RESET_X, SD, OTW to AGND – 0.3 V to 7 V
Maximum continuous sink current ( SD, OTW) 9 mA
Maximum operating junction temperature range, T
Storage temperature – 40 ° C to 125 ° C
Lead temperature, 1,6 mm (1/16 inch) from case for 10 seconds 260 ° C
Minimum pulse duration, low 30 ns
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) These voltages represent the dc voltage + peak ac waveform measured at the terminal of the device in all conditions.
(2)
(2)
(2)
(2)
J
(1)
TAS5342
– 0.3 V to 53 V
– 0.3 V to 53 V
– 0.3 V to 66.2 V
– 0.3 V to 53 V
0 ° C to 125 ° C
ORDERING INFORMATION
T
A
PACKAGE
(1)
(1)
DESCRIPTION
0 ° C to 70 ° C TAS5342DDV 44-pin HTSSOP
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .
4 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
Terminal Functions
TERMINAL
NAME DDV NO.
AGND 11 P Analog ground
BST_A 43 P Bootstrap pin, A-Side
BST_B 34 P Bootstrap pin, B-Side
BST_C 33 P Bootstrap pin, C-Side
BST_D 24 P Bootstrap pin, D-Side
GND 10 P Ground
GND_A 38 P Power ground for half-bridge A
GND_B 37 P Power ground for half-bridge B
GND_C 30 P Power ground for half-bridge C
GND_D 29 P Power ground for half-bridge D
GVDD_A 44 P Gate-drive voltage supply; A-Side
GVDD_B 1 P Gate-drive voltage supply; B-Side
GVDD_C 22 P Gate-drive voltage supply; C-Side
GVDD_D 23 P Gate-drive voltage supply; D-Side
M1 15 I Mode selection pin (LSB)
M2 14 I Mode selection pin
M3 13 I Mode selection pin (MSB)
NC 3, 4, 19, 20, 25, 42 – No connect. Pins may be grounded.
OC_ADJ 9 O Analog overcurrent programming pin
OTW 2 O Overtemperature warning signal, open-drain, active-low
OUT_A 39 O Output, half-bridge A
OUT_B 36 O Output, half-bridge B
OUT_C 31 O Output, half-bridge C
OUT_D 28 O Output, half-bridge D
PVDD_A 40, 41 P Power supply input for half-bridge A
PVDD_B 35 P Power supply input for half-bridge B
PVDD_C 32 P Power supply input for half-bridge C
PVDD_D 26, 27 P Power supply input for half-bridge D
PWM_A 6 I PWM Input signal for half-bridge A
PWM_B 8 I PWM Input signal for half-bridge B
PWM_C 16 I PWM Input signal for half-bridge C
PWM_D 18 I PWM Input signal for half-bridge D
RESET_AB 7 I Reset signal for half-bridge A and half-bridge B, active-low
RESET_CD 17 I Reset signal for half-bridge C and half-bridge D, active-low
SD 5 O Shutdown signal, open-drain, active-low
VDD 21 P Input power supply
VREG 12 P Internal voltage regulator
(1) I = input, O = output, P = power
FUNCTION
(1)
DESCRIPTION
TAS5342
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): TAS5342
2nd-OrderL-C
OutputFilter
forEach
Half-Bridge
Bootstrap
Capacitors
2-Channel
H-Bridge
BTL Mode
System
Microcontroller
OUT_A
OUT_B
OUT_C
OUT_D
BST_A
BST_B
BST_C
BST_D
RESET_AB
RESET_CD
System
Power
Supply
Hardwire
Mode
Control
PVDD
GVDD(12V)/VDD(12V)
GND
Hardwire
OCLimit
M1
M3
PVDD
Power
Supply
Decoupling
31.5V
12V
GND
VAC
PWM_A
PWM_C
PWM_D
PWM_B
VALID
M2
Left-
Channel
Output
Right-
Channel
Output
Input
H-Bridge1
Input
H-Bridge2
GVDD
VDD
VREG
PowerSupply
Decoupling
4 4 4
Bootstrap
Capacitors
2nd-OrderL-C
OutputFilter
forEach
Half-Bridge
Output
H-Bridge2
Output
H-Bridge1
OTW
OTW
SD
SD
TAS5518
B0047-02
PVDD_A,B,C,D
GND_A,B,C,D
GVDD_A,B,C,D
GND
VDD
VREG
AGND
OC_ADJ
I2C
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
TYPICAL SYSTEM BLOCK DIAGRAM
6 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): TAS5342
FUNCTIONAL BLOCK DIAGRAM
Temp.
Sense
M1
M2
RESET_AB
SD
OTW
AGND
OC_ADJ
VREG VREG
VDD
M3
Power
On
Reset
Under-
voltage
Protection
GND
PWM_D OUT_D
GND_D
PVDD_D
BST_D
Timing
Gate
Drive
PWM
Rcv.
Overload
Protection
I
sens e
GVDD_D
RESET_CD
4
Protection
and
I/OLogic
PWM_C OUT_C
GND_C
PVDD_C
BST_C
Timing
Gate
Drive
Ctrl.
PWM
Rcv.
GVDD_C
PWM_B OUT_B
GND_B
PVDD_B
BST_B
Timing
Gate
Drive
Ctrl.
PWM
Rcv.
GVDD_B
PWM_A OUT_A
GND_A
PVDD_A
BST_A
Timing
Gate
Drive
Ctrl.
PWM
Rcv.
GVDD_A
Ctrl.
BTL/PBTL−Configuration
Pulldown Resistor
BTL/PBTL−Configuration
PulldownResistor
BTL/PBTL−Configuration
PulldownResistor
BTL/PBTL−Configuration
PulldownResistor
InternalPullup
ResistorstoVREG
B0034-03
4
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): TAS5342
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
RECOMMENDED OPERATING CONDITIONS
MIN TYP MAX UNIT
PVDD_X Half-bridge supply voltage 0 31.5 34 V
GVDD_X 10.8 12 13.2 V
VDD Digital regulator supply voltage 10.8 12 13.2 V
RL(BTL) 3 4
RL(SE) current control), recommended demodulation 2.25 3 Ω
RL(PBTL) 1.5 2
L
(BTL) 5 10
Output
L
(SE) Output-filter inductance 5 10 μ H
Output
L
(PBTL) 5 10
Output
f
S
t
LOW
C
PVDD
C
BST
R
OC
R
EXT-PULLUP
T
J
Supply voltage for logic regulators and
gate-drive circuitry
Resistive load impedance (no Cycle-by_Cycle
filter
Minimum output inductance under
short-circuit condition
PWM frame rate 192 384 432 kHz
Minimum low-state pulse duration per PWM
Frame, noise shaper enabled
30 nS
PVDD close decoupling capacitors 0.1 μ F
Bootstrap capacitor, selected value supports
PWM frame rates from 192 kHz to 432 kHz
33 nF
Over-current programming resistor Resistor tolerance = 5% 27 27 47 k Ω
External pull-up resistor to +3.3V to +5.0V for
SD or OTW
3.3 4.7 k Ω
Junction temperature 0 125 ° C
AUDIO SPECIFICATIONS (BTL)
Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and
a TAS5342 power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1 kHz, PVDD_x = 31.5 V, GVDD_x = 12 V, RL= 4 Ω , fS= 384 kHz, R
C
= 470 nF, unless otherwise noted.
DEM
PARAMETER TEST CONDITIONS UNIT
RL= 4 Ω , 10% THD+N, clipped input
signal
P
OMAX
P
O
Maximum Power Output 80
Unclipped Power Output 64
THD+N Total harmonic distortion + noise
V
n
SNR Signal-to-noise ratio
Output integrated noise A-weighted, AES17 filter, Auto mute μ V
(1)
DNR Dynamic range 110 dB
DC Offset Output offset voltage +/- 15 mV
P
idle
Power dissipation due to idle losses (IPVDD_X) PO= 0 W, all halfbridges switching
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
RL= 6 Ω , 10% THD+N, clipped input
signal
RL= 8 Ω , 10% THD+N, clipped input
signal
RL= 4 Ω , 0 dBFS, unclipped input
signal
RL= 6 Ω , 0 dBFS, unclipped input
signal
RL= 8 Ω , 0 dBFS, unclipped input
signal
0 dBFS; AES17 filter 0.2%
1 W; AES17 filter 0.09%
disabled
A-weighted, AES17 filter, Auto mute
disabled
A-weighted, input level = – 60 dBFS,
AES17 filter
= 27 k Ω , TC= 75 ° C, Output Filter: L
OC
MIN TYP MAX
(2)
DEM
TAS5342
100
65 W
80
50
45
110 dB
2 W
= 10 μ H,
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Product Folder Link(s): TAS5342
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
AUDIO SPECIFICATIONS (Single-Ended Output)
Audio performance is recorded as a chipset consisting of a TAS5086 pwm processor (modulation index limited to 97.7%) and
a TAS5342 power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1 kHz, PVDD_x = 31.5 V, GVDD_x = 12 V, RL= 4 Ω , fS= 384 kHz, R
C
= 1.0 μ F, unless otherwise noted.
DEM
PARAMETER TEST CONDITIONS UNIT
RL= 3 Ω , 10% THD+N, clipped input
P
OMAX
P
O
Maximum Power Output
Unclipped Power Output
THD+N Total harmonic distortion + noise
V
n
SNR A-weighted, AES17 filter, Auto mute 109 dB
Output integrated noise
Signal-to-noise ratio
(1)
DNR Dynamic range 109 dB
P
idle
Power dissipation due to idle losses (IPVDD_X)
(1) SNR is calculated relative to 0-dBFS input level.
(2) Actual system idle losses are affected by core losses of output inductors.
signal
RL= 4 Ω , 10% THD+N, clipped input
signal
RL= 3 Ω , 0 dBFS, unclipped input
signal
RL= 4 Ω , 0 dBFS, unclipped input
signal
0 dBFS; AES17 filter 0.2%
1 W; AES17 filter 0.09%
A-weighted, AES17 filter, Auto mute 35 μ V
disabled
disabled
A-weighted, input level = – 60 dBFS
AES17 filter
PO= 0 W, all half bridges 2 W
switching
= 27 k Ω , TC= 75 ° C, Output Filter: L
OC
(2)
TAS5342
MIN TYP MAX
= 20 μ H,
DEM
40
30
30
20
W
AUDIO SPECIFICATIONS (PBTL)
Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and
a TAS5342 power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1kHz, PVDD_x = 31.5 V, GVDD_x = 12 V, RL= 3 Ω , fS= 384 kHz, R
= 1.0 uF, unless otherwise noted.
PARAMETER TEST CONDITIONS UNIT
RL= 2 Ω , 10% THD+N, clipped input
P
OMAX
P
O
Maximum Power Output
Unclipped Power Output
THD+N Total harmonic distortion + noise
V
n
SNR A-weighted, AES17 filter, Auto mute 110 dB
Output integrated noise
Signal-to-noise ratio
(1)
DNR Dynamic range 110 dB
DC Offset Outuput offset voltage +/- 15 mV
signal
RL= 3 Ω , 10% THD+N, clipped input
signal
RL= 2 Ω , 0 dBFS, unclipped input
signal
RL= 3 Ω , 0 dBFS, unclipped input
signal
0 dBFS; AES17 filter 0.2%
1 W; AES17 filter 0.09%
A-weighted, AES17 filter, Auto mute 45 μ V
disabled
disabled
A-weighted, input level = – 60 dBFS
AES17 filter
= 27 k Ω , TC= 75 ° C, Output Filter: L
OC
TAS5342
MIN TYP MAX
200
160
150
120
DEM
= 10 μ H, C
DEM
W
(1) SNR is calculated relative to 0-dBFS input level.
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TAS5342
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
AUDIO SPECIFICATIONS (PBTL) (continued)
Audio performance is recorded as a chipset consisting of a TAS5518 pwm processor (modulation index limited to 97.7%) and
a TAS5342 power stage. PCB and system configuraton are in accordance with recommended guidelines. Audio frequency =
1kHz, PVDD_x = 31.5 V, GVDD_x = 12 V, RL= 3 Ω , fS= 384 kHz, R
= 1.0 uF, unless otherwise noted.
PARAMETER TEST CONDITIONS UNIT
P
idle
Power dissipation due to idle losses (IPVDD_X) 2 W
PO= 0 W, all half bridges
switching
(2) Actual system idle losses are affected by core losses of output inductors.
ELECTRICAL CHARACTERISTICS
PVDD_x = 31.5 V, GVDD_X = 12 V, VDD = 12 V, TC(Case temperature) = 25 ° C, fS= 384 kHz, unless otherwise specified.
PARAMETER TEST CONDITIONS UNIT
Internal Voltage Regulator and Current Consumption
VREG VDD = 12 V 3 3.3 3.6 V
IVDD VDD supply current mA
IGVDD_X Gate supply current per half-bridge mA
IPVDD_X Half-bridge idle current
Output Stage MOSFETs
R
DSon,LS
R
DSon,HS
I/O Protection
V
uvp,G
(1)
V
uvp,hyst
BST
uvpF
BST
uvpR
(1)
OTW
OTW
OTE
(1)
HYST
(1)
OTE- OTE - OTW differential, temperature
OTW
differential
OLPC Overload protection counter fS= 384 kHz 1.25 ms
I
OC
I
OCT
t
ACTIVITY
DETECTOR
Voltage regulator, only used as a
reference node
Operating, 50% duty cycle 7.2 17
Idle, reset mode 5.54 11
50% duty cycle 8 16
Reset mode 1 1.8
50% duty cycle, without output filter or load 16.6 25 mA
Reset mode, no switching 465 558 μ A
Drain-to-source resistance, Low
Side
Drain-to-source resistance, High
Side
TJ= 25 ° C, excludes metallization resistance, 80 89 m Ω
TJ= 25 ° C, excludes metallization resistance, 80 89 m Ω
Undervoltage protection limit,
GVDD_X
Undervoltage protection limit, 250 mV
GVDD_X
Puts device into RESET when BST 5.85 V
voltage falls below limit
Brings device out of RESET when 7 V
BST voltage rises above limit
Overtemperature warning 115 125 135 ° C
Temperature drop needed below
OTW temp. for OTW to be inactive 25 ° C
after the OTW event
Overtemperature error threshold 145 155 165 ° C
(1)
delta between OTW and OTE
Overcurrent limit protection 10.1 A
Resistor — programmable, high-end,
R
= 27 k Ω with 1 ms pulse
OC
Overcurrent response time 150 ns
Time for PWM activity detector to
activite when no PWM is present
Lack of transistion of any PWM input 13.2 μ S
= 27 k Ω , TC= 75 ° C, Output Filter: L
OC
(2)
TAS5342
MIN TYP MAX
TAS5342
MIN TYP MAX
= 10 μ H, C
DEM
9.5 V
30 ° C
DEM
(1) Specified by design
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Product Folder Link(s): TAS5342
8
Ω
6
Ω
4
Ω
T =75°C
THD+Nat10%
C
P
– OutputPower – W
O
PVDD – SupplyVoltage – V
0
130
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
0 30
2 4
6810
12 14
161820
22 24
26
28
0.005
10
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
P – OutputPower – W
O
THD+N – TotalHamonic Disto
rtion – %
8
Ω
4
Ω
6
Ω
200 20 50 100 200 500
1
100 50
2
10 20 5
T =75°C
THD+Nat10%
C
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS (continued)
PVDD_x = 31.5 V, GVDD_X = 12 V, VDD = 12 V, TC(Case temperature) = 25 ° C, fS= 384 kHz, unless otherwise specified.
PARAMETER TEST CONDITIONS UNIT
I
PD
Output pulldown current of each
half-bridge
Connected when RESET is active to provide
bootstrap capacitor charge. Not used in SE 3 mA
mode.
Static Digital Specifications
V
IH
V
IL
I
Leakage
High-level input voltage 2 V
Low-level input voltage 0.8 V
PWM_A, PWM_B, PWM_C, PWM_D, M1,
M2, M3, RESET_AB, RESET_CD
Input leakage current 100 μ A
OTW/SHUTDOWN (SD)
R
INT_PU
V
OH
V
OL
Internal pullup resistance, OTW to
VREG, SD to VREG
High-level output voltage V
Internal pullup resistor 3 3.3 3.6
External pullup of 4.7 k Ω to 5 V 4.5 5
Low-level output voltage IO= 4 mA 0.2 0.4 V
FANOUT Device fanout OTW, SD No external pullup 30 Devices
TAS5342
MIN TYP MAX
20 26 32 k Ω
TAS5342
TOTAL HARMONIC DISTORTION + NOISE OUTPUT POWER
OUTPUT POWER SUPPLY VOLTAGE
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 11
TYPICAL CHARACTERISTICS, BTL CONFIGURATION
vs vs
Figure 1. Figure 2.
Product Folder Link(s): TAS5342
T =25°C
THD+Nat10%
C
2ChannelsOutputPower – W
Efficiency
– %
0
100
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
0
280
20 40 60
80
100 120 140 160
180
200 220 240 260
4
Ω
8
Ω
6
Ω
0
100
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
0 30
2 4
6810
12 14
161820
22 24
26
28
P
Output Power W
O
– –
PVDD – SupplyVoltage – V PVDD – SupplyVoltage – V
T =75°C
C
8
Ω
4
Ω
6
Ω
0
150
10
20
30
40
50
60
70
80
90
100
110
120
130
140
10 120 20 30 40 50 60 70 80 90 100 110
T – CaseTemperature – °C
C
P Output Power W
O
– –
8
Ω
6
Ω
4
Ω
THD+Nat10%
2ChannelsOutputPower – W
PowerLoss – W
0
30
2
4
6
8
10
12
14
16
18
20
22
24
26
28
0 240 20 40 60
80
100 120 140 160
180
200 220
4
Ω
6
Ω
8
Ω
T =25°C
THD+Nat10%
C
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued)
UNCLIPPED OUTPUT POWER SYSTEM EFFICIENCY
vs vs
SUPPLY VOLTAGE OUTPUT POWER
Figure 3. Figure 4.
SYSTEM POWER LOSS SYSTEM OUTPUT POWER
vs vs
OUTPUT POWER CASE TEMPERATURE
12 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Figure 5. Figure 6.
Product Folder Link(s): TAS5342
–160
+0
–150
–140
–130
–120
–110
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0 22k 1k 2k 3k 4k 5k 6k 7k 8k 9k 10k 11k 12k 13k 14k 15k 16k 17k 18k 19k 20k 21k
f – Frequency – kHz
T =75°C
V =18.9V
SampleRate=48kHz
FFTSize=16384
C
REF
Noise Amplitude – V
P Output Power W
O
– –
PVDD – SupplyVoltage – V
4
Ω
3
Ω
0
50
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
0 30
2 4
6810
12 14
161820
22 24
26
28
T =75°C
THD+Nat10%
C
0.005
10
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
20m 50 50m 100m 200m 500m 1 2 5 10 20
4
Ω
3
Ω
T =75°C
THD+Nat10%
C
P – OutputPower – W
O
THD+N
Total Hamonic Distortion % – –
TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued)
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS, SE CONFIGURATION
NOISE AMPLITUDE
vs
FREQUENCY
Figure 7.
TOTAL HARMONIC DISTORTION + NOISE OUTPUT POWER
OUTPUT POWER SUPPLY VOLTAGE
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 13
vs vs
Figure 8. Figure 9.
Product Folder Link(s): TAS5342
T – CaseTemperature – °C
C
P
–
OutputPower – W
O
THD+Nat10%
4
Ω
3
Ω
0
50
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
10 120 20 30 40 50 60 70
80 90
100 110
T =75°C
THD+Nat10%
C
4 Ω 2
Ω
8 Ω 8
Ω
4 Ω 4
Ω
4 Ω 3
Ω
PVDD – SupplyVoltage – V
P – OutputPower
– W
O
0
250
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
0 30
2 4
6810
12 14
161820
22 24
26
28
0.005
10
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
20m 100m 500m
2
10 50 200
T =75°C
THD+Nat10%
C
4
Ω
8
Ω
2
Ω
3
Ω
THD+N – TotalHamonic Distortion – %
P – OutputPower – W
O
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
TYPICAL CHARACTERISTICS, SE CONFIGURATION (continued)
OUTPUT POWER
vs
CASE TEMPERATURE
TOTAL HARMONIC DISTORTION + NOISE OUTPUT POWER
OUTPUT POWER SUPPLY VOLTAGE
14 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Figure 10.
TYPICAL CHARACTERISTICS, PBTL CONFIGURATION
vs vs
Figure 11. Figure 12.
Product Folder Link(s): TAS5342
THD+Nat10%
8
Ω
4
Ω
8
Ω
4
Ω
8
Ω
4
Ω
8
Ω
3
Ω
P – OutputPower
– W
O
T – CaseTemperature – °C
C
8 Ω 8 Ω 8 Ω 4
Ω
8 Ω 8 Ω 8 Ω 2
Ω
0
260
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
10 120 20 30 40 50 60 70
80 90
100 110
TYPICAL CHARACTERISTICS, PBTL CONFIGURATION (continued)
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
SYSTEM OUTPUT POWER
CASE TEMPERATURE
vs
Figure 13.
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): TAS5342
GVDD(+12V)
VDD(+12V)
PVDD
PVDD
GVDD(+12V)
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
TAS5508/18
PWM1_P
PWM1_M
PWM2_P
PWM2_M
VALID
Microcontroller
I2C
10µH
100nF
50V
10µH
100nF
TAS5342DDV
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
GVDD_C
GVDD_D
BST_D
PVDD_D
OUT_D
GND_D
GND_C
OUT_C
PVDD_C
BST_C
BST_B
PVDD_B
OUT_B
GND_B
GND_A
VDD
GVDD_A
BST_A
PVDD_A
OUT_A
NC
NC
NC
NC
NC
PVDD_D
PVDD_A
NC
25V
33nF
100nF
50V
100nF
50V
100nF
470nF
100nF
50V
10µH
470µF
50V
470 Fµ
50V
33nF
25V
3.3 Ω
100nF
0 Ω
27k
100nF
33nF
25V
100nF
50V
10nF
50V
100nF
470nF
100nF
100nF
50V
33nF
25V
100nF
50V
100nF
10µH
3.3 Ω
10nF
50V
10nF
50V
3.3 Ω
1nF
50V
1nF
50V
1nF
50V
1nF
50V
3.3 Ω
10nF
50V
10nF
50V
3.3 Ω
3.3
Ω
10nF
50V
10 Ω
10 Ω
10 Ω
10 Ω
50V
GND
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
APPLICATION INFORMATION
PCB Material Recommendation
FR-4 Glass Epoxy material with 2 oz. (70 μ m) is recommended for use with the TAS5342. The use of this
material can provide for higher power output, improved thermal performance, and better EMI margin (due to
lower PCB trace inductance.
PVDD Capacitor Recommendation
The large capacitors used in conjunction with each full-birdge, are referred to as the PVDD Capacitors. These
capacitors should be selected for proper voltage margin and adequate capacitance to support the power
requirements. In practice, with a well designed system power supply, 1000 μ F, 50-V will support more
applications. The PVDD capacitors should be low ESR type because they are used in a circuit associtated with
high-speed switching.
Decoupling Capacitor Recommendations
In order to design an amplifier that has robust performance, passes regulatory requirements, and exhibits good
audio performance, good quality decoupling capacitors should be used. In practice, X7R should be used in this
application.
The voltage of the decoupling capactors should be selected in accordance with good design practices.
Temperature, ripple current, and voltage overshoot must be considered. This fact is particularly true in the
selection of the 0.1 μ F that is placed on the power supply to each half-bridge. It must withstand the voltage
overshoot of the PWM switching, the heat generated by the amplifier during high power output, and the ripple
current created by high power power output. A minimum voltage rating of 50-V is required for use with a 31.5-V
power supply.
System Design Recommendations
The following schematics and PCB layouts illustrate "best practices" in the use of the TAS5342.
Product Folder Link(s): TAS5342
Figure 14. Typical Differential (2N) BTL Application With AD Modulation Filters
16 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
GVDD(+12V)
VDD(+12V)
PVDD
PVDD
GVDD(+12V)
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
TAS5508/18
PWM1_P
PWM2_P
VALID
Microcontroller
I2C
10µH
100nF
50V
10µH
100nF
TAS5342DDV
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
GVDD_C
GVDD_D
BST_D
PVDD_D
OUT_D
GND_D
GND_C
OUT_C
PVDD_C
BST_C
BST_B
PVDD_B
OUT_B
GND_B
GND_A
VDD
GVDD_A
BST_A
PVDD_A
OUT_A
NC
NC
NC
NC
NC
PVDD_D
PVDD_A
NC
25V
33nF
100nF
50V
100nF
50V
100nF
470nF
100nF
50V
10µH
470µF
50V
470 Fµ
50V
33nF
25V
3.3 Ω
100nF
0 Ω
27k
100nF
33nF
25V
100nF
50V
10nF
50V
100nF
470nF
100nF
100nF
50V
33nF
25V
100nF
50V
100nF
10µH
3.3 Ω
10nF
50V
10nF
50V
3.3 Ω
1nF
50V
1nF
50V
1nF
50V
1nF
50V
3.3 Ω
10nF
50V
10nF
50V
3.3 Ω
3.3
Ω
10nF
50V
10 Ω
10 Ω
10 Ω
10 Ω
50V
GND
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
Figure 15. Typical Non-Differential (1N) BTL Application With AD Modulation Filters
Product Folder Link(s): TAS5342
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 17
PVDD
A
PVDD
B
PVDD
C
PVDD
D
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
100nF
50V
10nF
50V
10k
470µF
50V
10k
10k
10nF
50V
100nF
50V
470µF
50V
1µF
50V
10nF
10nF
50V
1µF
1µF
470µF
50V
100nF
50V
100nF
50V
3.3 Ω
3.3
Ω
3.3 Ω
100nF
50V
470µF
50V
10k
3.3 Ω
470µF
50V
100nF
50V
100nF
50V
10nF
50V
10nF
50V
470µF
50V
10nF
50V
470µF
50V
10nF
50V
100nF
50V
470µF
50V
1µF
3.3 Ω
3.3 Ω
3.3
3.3
Ω
GVDD(+12V)
VDD(+12V)
PVDD
PVDD
GVDD(+12V)
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
TAS5508/18
PWM1_P
PWM2_P
PWM3_P
PWM4_P
VALID
Microcontroller
I2C
20µH
20µH
100nF
TAS5342DDV
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
GVDD_C
GVDD_D
BST_D
PVDD_D
OUT_D
GND_D
GND_C
OUT_C
PVDD_C
BST_C
BST_B
PVDD_B
OUT_B
GND_B
GND_A
VDD
GVDD_A
BST_A
PVDD_A
OUT_A
NC
NC
NC
NC
NC
PVDD_D
PVDD_A
NC
25V
33nF
100nF
50V
100nF
20µH
470µF
50V
470 Fµ
50V
33nF
25V
3.3 Ω
100nF
0 Ω
27k
100nF
33nF
25V
100nF
50V
10nF
50V
100nF
100nF
33nF
25V
100nF
50V
100nF
20µH
3.3 Ω
10nF
50V
10 Ω
10 Ω
10 Ω
10 Ω
A
B
C
D
50V
Ω
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
18 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Figure 16. Typical SE Application
Product Folder Link(s): TAS5342
GVDD(+12V)
VDD(+12V)
PVDD
PVDD
GVDD(+12V)
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
TAS5508/18
PWM1_P
PWM1_M
VALID
Microcontroller
I2C
10µH
10µH
100nF
TAS5342DDV
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
GVDD_C
GVDD_D
BST_D
PVDD_D
OUT_D
GND_D
GND_C
OUT_C
PVDD_C
BST_C
BST_B
PVDD_B
OUT_B
GND_B
GND_A
VDD
GVDD_A
BST_A
PVDD_A
OUT_A
NC
NC
NC
NC
NC
PVDD_D
PVDD_A
NC
25V
33nF
100nF
50V
100nF
1µF
100nF
50V
10µH
470µF
50V
470 Fµ
50V
33nF
25V
3.3 Ω
100nF
0 Ω
27k
100nF
33nF
25V
100nF
50V
10nF
50V
100nF
100nF
100nF
50V
33nF
25V
100nF
50V
100nF
10µH
3.3 Ω
10nF
50V
10nF
50V
3.3 Ω
1nF
50V
1nF
50V
3.3
Ω
10nF
50V
10 Ω
10 Ω
10 Ω
10 Ω
1R
GVDD(+12V)
VDD(+12V)
PVDD
PVDD
GVDD(+12V)
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
TAS5508/18
PWM1_P
PWM1_M
VALID
Microcontroller
I2C
10µH
10µH
100nF
TAS5342DDV
GVDD_B
OTW
SD
PWM_A
RESET_AB
PWM_B
OC_ADJ
GND
AGND
VREG
M3
M2
M1
PWM_C
RESET_CD
PWM_D
GVDD_C
GVDD_D
BST_D
PVDD_D
OUT_D
GND_D
GND_C
OUT_C
PVDD_C
BST_C
BST_B
PVDD_B
OUT_B
GND_B
GND_A
VDD
GVDD_A
BST_A
PVDD_A
OUT_A
NC
NC
NC
NC
NC
PVDD_D
PVDD_A
NC
25V
33nF
100nF
50V
100nF
1µF
100nF
50V
10µH
470µF
50V
470 Fµ
50V
33nF
25V
3.3 Ω
100nF
0 Ω
27k
100nF
33nF
25V
100nF
50V
10nF
50V
100nF
100nF
100nF
50V
33nF
25V
100nF
50V
100nF
10µH
3.3 Ω
10nF
50V
10nF
50V
3.3 Ω
1nF
50V
1nF
50V
3.3
Ω
10nF
50V
10 Ω
10 Ω
10 Ω
10 Ω
1R
50V
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
Figure 17. Typical Differential (2N) PBTL Application With AD Modulation Filters
Product Folder Link(s): TAS5342
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 19
Figure 18. Typical Non-Differential (1N) PBTL Application
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
THEORY OF OPERATION
POWER SUPPLIES
To facilitate system design, the TAS5342 needs only
a 12-V supply in addition to the (typical) 31.5-V
power-stage supply. An internal voltage regulator
provides suitable voltage levels for the digital and
low-voltage analog circuitry. Additionally, all circuitry
requiring a floating voltage supply, e.g., the high-side
gate drive, is accommodated by built-in bootstrap
circuitry requiring only an external capacitor for each
half-bridge.
In order to provide outstanding electrical and
acoustical characteristics, the PWM signal path
including gate drive and output stage is designed as
identical, independent half-bridges. For this reason,
each half-bridge has separate gate drive supply
(GVDD_X), bootstrap pins (BST_X), and power-stage
supply pins (PVDD_X). Furthermore, an additional pin
(VDD) is provided as supply for all common circuits.
Although supplied from the same 12-V source, it is
highly recommended to separate GVDD_A,
GVDD_B, GVDD_C, GVDD_D, and VDD on the
printed-circuit board (PCB) by RC filters (see
application diagram for details). These RC filters
Special attention should be paid to the power-stage
power supply; this includes component selection,
PCB placement, and routing. As indicated, each
half-bridge has independent power-stage supply pins
(PVDD_X). For optimal electrical performance, EMI
compliance, and system reliability, it is important that
each PVDD_X pin is decoupled with a 100-nF
ceramic capacitor placed as close as possible to
each supply pin. It is recommended to follow the PCB
layout of the TAS5342 reference design. For
additional information on recommended power supply
and required components, see the application
diagrams given previously in this data sheet.
The 12-V supply should be from a low-noise,
low-output-impedance voltage regulator. Likewise, the
31.5-V power-stage supply is assumed to have low
output impedance and low noise. The power-supply
sequence is not critical as facilitated by the internal
power-on-reset circuit. Moreover, the TAS5342 is fully
protected against erroneous power-stage turnon due
to parasitic gate charging. Thus, voltage-supply ramp
rates (dV/dt) are non-critical within the specified
range (see the Recommended Operating Conditions
section of this data sheet).
provide the recommended high-frequency isolation.
Special attention should be paid to placing all
SYSTEM POWER-UP/POWER-DOWN
decoupling capacitors as close to their associated SEQUENCE
pins as possible. In general, inductance between the
power supply pins and decoupling capacitors must be
avoided. (See reference board documentation for
additional information.)
Powering Up
The TAS5342 does not require a power-up sequence.
The outputs of the H-bridges remain in a high-impedFor a properly functioning bootstrap circuit, a small ance state until the gate-drive supply voltage
ceramic capacitor must be connected from each (GVDD_X) and VDD voltage are above the
bootstrap pin (BST_X) to the power-stage output pin undervoltage protection (UVP) voltage threshold (see
(OUT_X). When the power-stage output is low, the the Electrical Characteristics section of this data
bootstrap capacitor is charged through an internal sheet). Although not specifically required, it is
diode connected between the gate-drive power-- recommended to hold RESET_AB and RESET_CD in
supply pin (GVDD_X) and the bootstrap pin. When a low state while powering up the device. This allows
the power-stage output is high, the bootstrap an internal circuit to charge the external bootstrap
capacitor potential is shifted above the output capacitors by enabling a weak pulldown of the
potential and thus provides a suitable voltage supply half-bridge output.
for the high-side gate driver. In an application with
PWM switching frequencies in the range from 352
kHz to 384 kHz, it is recommended to use 33-nF
ceramic capacitors, size 0603 or 0805, for the
bootstrap supply. These 33-nF capacitors ensure
sufficient energy storage, even during minimal PWM
duty cycles, to keep the high-side power stage FET
(LDMOS) fully turned on during the remaining part of
the PWM cycle. In an application running at a
reduced switching frequency, generally 192 kHz, the
bootstrap capacitor might need to be increased in
value.
When the TAS5342 is being used with TI PWM
modulators such as the TAS5518, no special
attention to the state of RESET_AB and RESET_CD
is required, provided that the chipset is configured as
recommended.
Powering Down
The TAS5342 does not require a power-down
sequence. The device remains fully operational as
long as the gate-drive supply (GVDD_X) voltage and
VDD voltage are above the undervoltage protection
(UVP) voltage threshold (see the Electrical
20 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): TAS5342
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
Characteristics section of this data sheet). Although signal using the system microcontroller and
not specifically required, it is a good practice to hold responding to an overtemperature warning signal by,
RESET_AB and RESET_CD low during power down, e.g., turning down the volume to prevent further
thus preventing audible artifacts including pops or heating of the device resulting in device shutdown
clicks. (OTE).
When the TAS5342 is being used with TI PWM To reduce external component count, an internal
modulators such as the TAS5518, no special pullup resistor to 3.3 V is provided on both SD and
attention to the state of RESET_AB and RESET_CD OTW outputs. Level compliance for 5-V logic can be
is required, provided that the chipset is configured as obtained by adding external pullup resistors to 5 V
recommended. (see the Electrical Characteristics section of this data
sheet for further specifications).
Mid Z Sequence Compatability
The TAS5342 is compatable with the Mid Z sequence
of the TAS5086 Modulator. The Mid Z Sequence is a The TAS5342 contains advanced protection circuitry
series of pulses that is generated by the modulator. carefully designed to facilitate system integration and
This sequence causes the power stage to slowly ease of use, as well as to safeguard the device from
enable its outputs as it begins to switch. permanent failure due to a wide range of fault
By slowly starting the PWM switching, the impulse
response created by the onset of switching is
reduced. This impulse response is the acoustic
artifact that is heard in the output transducers
(loudspeakers) and is commonly termed "click" or
"pop".
The low acoustic artifact noise of the TAS5342 will be
further decreased when used in conjunction with the
TAS5086 modulator with the Mid Z Sequence
enabled.
The Mid Z sequence is primarily used for the
single-ended output configuration. It facilitates a
"softer" PWM output start after the split cap output
configuration is charged.
ERROR REPORTING
The SD and OTW pins are both active-low,
open-drain outputs. Their function is for
protection-mode signaling to a PWM controller or
other system-control device.
Any fault resulting in device shutdown is signaled by
the SD pin going low. Likewise, OTW goes low when
the device junction temperature exceeds 125 ° C (see
the following table).
SD OTW DESCRIPTION
0 0
0 1 Overload (OLP) or undervoltage (UVP)
1 0
1 1
Note that asserting either RESET_AB or RESET_CD
low forces the SD signal high, independent of faults
being present. TI recommends monitoring the OTW
Overtemperature (OTE) or overload (OLP) or
undervoltage (UVP)
Junction temperature higher than 125 ° C
(overtemperature warning)
Junction temperature lower than 125 ° C and no
OLP or UVP faults (normal operation)
DEVICE PROTECTION SYSTEM
conditions such as short circuits, overload,
overtemperature, and undervoltage. The TAS5342
responds to a fault by immediately setting the power
stage in a high-impedance (Hi-Z) state and asserting
the SD pin low. In situations other than overload and
over-temperature error ( OTE), the device
automatically recovers when the fault condition has
been removed, i.e., the supply voltage has increased.
The device will function on errors, as shown in the
following table.
BTL MODE PBTL MODE SE MODE
Local Local Local
Error Turns Off Error Turns Off Error Turns Off
In In In
A A A
A + B A + B
B B B
C C C
C + D C + D
D D D
Bootstrap UVP does not shutdown according to the
table, it shutsdown the respective halfbridge.
Use of TAS5342 in High-Modulation-Index
Capable Systems
This device requires at least 30 ns of low time on the
output per 384-kHz PWM frame rate in order to keep
the bootstrap capacitors charged. As an example, if
the modulation index is set to 99.2% in the TAS5508,
this setting allows PWM pulse durations down to 10
ns. This signal, which does not meet the 30-ns
requirement, is sent to the PWM_X pin and this
low-state pulse time does not allow the bootstrap
capacitor to stay charged. The TAS5342 device
requires limiting the TAS5508 modulation index to
97.7% to keep the bootstrap capacitor charged under
all signals and loads.
The TAS5342 contains a bootstrap capacitor under
voltage protection circuit (BST_UVP) that monitors
the voltage on the bootstrap capacitors. When the
A + B + C
+ D
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 21
Product Folder Link(s): TAS5342
TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
voltage on the bootstrap capacitors is less than In general, it is recommended to follow closely the
required for proper control of the High-Side external component selection and PCB layout as
MOSFETs, the device will initiate bootstrap capacitor given in the Application section.
recharge sequences until the bootstrap capacitors are
properly charged for robust operation. This function
may be activated with PWM pulses less than 30 nS.
Therefore, TI strongly recommends using a TI PWM and AGND. (See the Electrical Characteristics section
processor, such as TAS5518, TAS5086 or TAS5508, of this data sheet for information on the correlation
with the modulation index set at 97.7% to interface between programming-resistor value and the OC
with TAS5342. threshold.) It should be noted that a properly
Overcurrent (OC) Protection With Current
Limiting and Overload Detection
The device has independent, fast-reacting current
detectors with programmable trip threshold (OC
threshold) on all high-side and low-side power-stage
FETs. See the following table for OC-adjust resistor
values. The detector outputs are closely monitored by
two protection systems. The first protection system
controls the power stage in order to prevent the
output current from further increasing, i.e., it performs
a current-limiting function rather than prematurely
shutting down during combinations of high-level
music transients and extreme speaker load
impedance drops. If the high-current situation
persists, i.e., the power stage is being overloaded, a
second protection system triggers a latching
shutdown, resulting in the power stage being set in
the high-impedance (Hi-Z) state. Current limiting and
overload protection are independent for half-bridges
A and B and, respectively, C and D. That is, if the
bridge-tied load between half-bridges A and B causes
an overload fault, only half-bridges A and B are shut
down.
• For the lowest-cost bill of materials in terms of
component selection, the OC threshold measure
should be limited, considering the power output
requirement and minimum load impedance.
Higher-impedance loads require a lower OC
threshold.
• The demodulation-filter inductor must retain at
least 5 μ H of inductance at twice the OC threshold
setting.
Unfortunately, most inductors have decreasing
inductance with increasing temperature and
increasing current (saturation). To some degree, an
increase in temperature naturally occurs when
operating at high output currents, due to core losses
and the dc resistance of the inductor's copper
winding. A thorough analysis of inductor saturation
and thermal properties is strongly recommended.
Setting the OC threshold too low might cause issues
such as lack of enough output power and/or
unexpected shutdowns due to too-sensitive overload
detection.
For added flexibility, the OC threshold is
programmable within a limited range using a single
external resistor connected between the OC_ADJ pin
functioning overcurrent detector assumes the
presence of a properly designed demodulation filter at
the power-stage output. Short-circuit protection is not
provided directly at the output pins of the power stage
but only on the speaker terminals (after the
demodulation filter). It is required to follow certain
guidelines when selecting the OC threshold and an
appropriate demodulation inductor:
OC-Adjust Resistor Values Max. Current Before OC Occurs
(k Ω ) (A), TC=75 ° C
27 10.1
33 9.1
47 7.1
The reported max peak current in the table above is
measured with continuous current in 1 Ω , one
channel active and the other one muted.
Pin-To-Pin Short Circuit Protection System
(PPSC)
The PPSC detection system protects the device from
permanent damage in the case that a power output
pin (OUT_X) is shorted to GND_X or PVDD_X. For
comparison the OC protection system detects an over
current after the demodulation filter where PPSC
detects shorts directly at the pin before the filter.
PPSC detection is performed at startup i.e. when
VDD is supplied, consequently a short to either
GND_X or PVDD_X after system startup will not
activate the PPSC detection system. When PPSC
detection is activated by a short on the output, all half
bridges are kept in a Hi-Z state until the short is
removed, the device then continues the startup
sequence and starts switching. The detection is
controlled globally by a two step sequence. The first
step ensures that there are no shorts from OUT_X to
GND_X, the second step tests that there are no
shorts from OUT_X to PVDD_X. The total duration of
this process is roughly proportional to the capacitance
of the output LC filter. The typical duration is < 15
ms/ μ F. While the PPSC detection is in progress, SD
is kept low, and the device will not react to changes
applied to the RESET pins. If no shorts are present
the PPSC detection passes, and SD is released. A
device reset will not start a new PPSC detection.
22 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s): TAS5342
SLAS557B – SEPTEMBER 2007 – REVISED OCTOBER 2007
PPSC detection is enabled in BTL and PBTL output VDD or GVDD_X pin results in all half-bridge outputs
configurations, the detection is not performed in SE immediately being set in the high-impedance (Hi-Z)
mode. To make sure not to trip the PPSC detection state and SD being asserted low. The device
system it is recommended not to insert resistive load automatically resumes operation when all supply
to GND_X or PVDD_X. voltages have increased above the UVP threshold.
TAS5342
Overtemperature Protection
The TAS5342 has a two-level temperature-protection
system that asserts an active-low warning signal
( OTW) when the device junction temperature
exceeds 125 ° C (nominal) and, if the device junction
temperature exceeds 155 ° C (nominal), the device is
put into thermal shutdown, resulting in all half-bridge
outputs being set in the high-impedance (Hi-Z) state
and SD being asserted low. OTE is latched in this
case. To clear the OTE latch, either RESET_AB or
RESET_CD must be asserted. Thereafter, the device
resumes normal operation.
Undervoltage Protection (UVP) and Power-On
Reset (POR)
The UVP and POR circuits of the TAS5342 fully
protect the device in any power-up/down and
brownout situation. While powering up, the POR
circuit resets the overload circuit (OLP) and ensures
that all circuits are fully operational when the
GVDD_X and VDD supply voltages reach stated in
the Electrical Characteristics Table. Although
GVDD_X and VDD are independently monitored, a
supply voltage drop below the UVP threshold on any
DEVICE RESET
Two reset pins are provided for independent control
of half-bridges A/B and C/D. When RESET_AB is
asserted low, all four power-stage FETs in half--
bridges A and B are forced into a high-impedance
(Hi-Z) state. Likewise, asserting RESET_CD low
forces all four power-stage FETs in half-bridges C
and D into a high-impedance state. Thus, both reset
pins are well suited for hard-muting the power stage if
needed.
In BTL modes, to accommodate bootstrap charging
prior to switching start, asserting the reset inputs low
enables weak pulldown of the half-bridge outputs. In
the SE mode, the weak pulldowns are not enabled,
and it is therefore recommended to ensure bootstrap
capacitor charging by providing a low pulse on the
PWM inputs when reset is asserted high.
Asserting either reset input low removes any fault
information to be signalled on the SD output, i.e., SD
is forced high.
A rising-edge transition on either reset input allows
the device to resume operation after an overload
fault. To ensure thermal reliability, the rising edge of
reset must occur no sooner than 4ms after the falling
edge of SD.
Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 23
Product Folder Link(s): TAS5342
PACKAGE OPTION ADDENDUM
www.ti.com
19-Nov-2007
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
TAS5342DDV ACTIVE HTSSOP DDV 44 35 Green (RoHS &
no Sb/Br)
TAS5342DDVG4 ACTIVE HTSSOP DDV 44 35 Green (RoHS &
no Sb/Br)
TAS5342DDVR ACTIVE HTSSOP DDV 44 2000 Green (RoHS &
no Sb/Br)
TAS5342DDVRG4 ACTIVE HTSSOP DDV 44 2000 Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
(3)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
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incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
TAPE AND REEL INFORMATION
19-Mar-2008
*All dimensions are nominal
Device Package
TAS5342DDVR HTSSOP DDV 44 2000 330.0 24.4 8.6 15.6 1.8 12.0 24.0 Q1
Type
Package
Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TAS5342DDVR HTSSOP DDV 44 2000 346.0 346.0 41.0
Pack Materials-Page 2
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