Texas Instruments TAS5261DKDRG4, TAS5261 Datasheet

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PVDD Supply Voltage − V
30
60
90
120
150
180
210
240
270
300
330
0 5 10 15 20 25 30 35 40 45 50
TC = 75°C THD+N at 10%
P
O
− Output Power − W
G001
8
6
4
315-W Mono BTL Digital Amplifier Power Stage

FEATURES

Total Output Power 125 W Into 8 at <0.09% THD+N – 220 W Into 6 at 10% THD+N – 315 W Into 4 at 10% THD+N
110-dB SNR (A-Weighted with TAS5518 modulator)
Supports Pulse-Width Modulation (PWM) Frame Rates of 192 kHz to 384 kHz
Resistor-Programmable Current Limit
Integrated Self-Protection Circuit Including:
Under Voltage Protection – Over Temperature Warning and Error – Over Load Protection – Short Circuit (OC) Protection – PWM Activity Dectector
Power-On Reset (POR) to Eliminate System Power-Supply Sequencing
Thermally-Enhanced Package DKD (36-pin PSOP3)
EMI Compliant When Used With Recommended System Design
Error Reporting 3.3-V and 5-V Compliant
TAS5261
SLES188 – AUGUST 2006
The TAS5261 has complete protection circuitry integrated on chip, safeguarding the device and speakers against fault conditions that could damage the system. These protection features are short-circuit protection, overcurrent protection, undervoltage protection, and a loss of pulse-width modulation (PWM) input signal (PWM Activity Detector).
A power-on reset (POR) circuit is used to eliminate power-supply sequencing that is normally required for most H-bridge designs.
OUTPUT POWER
vs
PVDD_x SUPPLY VOLTAGE

APPLICATIONS

AV Receivers
DVD Receivers
Mini/Micro Component Systems
Home Theater Systems

DESCRIPTION

The TAS5261 is a high-performance, integrated mono digital amplifier power stage designed to drive 4- to 8- speakers with low harmonic distortion. This system requires only a simple, passive demodulation filter to deliver high-quality, high-efficiency audio amplification.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2006, Texas Instruments Incorporated
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1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
36 35 34 33 32
31 30 29 28 27 26 25 24 23 22
21 20 19
BST_A
GVDD_A
OTW
SD
RESET
PWM_A
OC_ADJ
GND AGND VREG
M3 M2
M1
PWM_B
VDD
GND
GVDD_B
BST_B
PVDD_A PVDD_A PVDD_A PGND PGND PGND OUT_A OUT_A OUT_A OUT_B OUT_B OUT_B PGND PGND PGND PVDD_B PVDD_B PVDD_B
DKDPACKAGE
(TOP VIEW)
P0018-02
TAS5261
SLES188 – AUGUST 2006

DEVICE INFORMATION

The TAS5261 is available in a thermally-enhanced 36-pin PSOP3 PowerPAD™ package. The heat slug is located on the top side of the device for convenient thermal coupling to a heat sink.
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DISSIPATION RATINGS

PARAMETER CONDITION TYPICAL (DKD)
R
θ JC
R
θ JC
BTL channel (four transistors) 0.6 ° C/W
One transistor 2.38 ° C/W
Pad area 80 mm

Protection Mode

Protection modes are selected by shorting M1, M2, and M3 to VREG or GND.
Table 1. Protection Modes
MODE PINS
(1)
M3
M2 M1
0 0 0 Full protection (default) 0 0 1 Reserved 0 1 0 OC latching mode 0 1 1 Reserved
(1) M3 is reserved and always should be connected to board GND.
PROTECTION MODE
TAS5261
SLES188 – AUGUST 2006
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TAS5261
SLES188 – AUGUST 2006
TERMINAL FUNCTIONS
TERMINAL
NAME PIN NO.
AGND 9 I Analog ground BST_A 1 P Bootstrap, A side BST_B 18 I Bootstrap, B side GND 8, 16 I Power ground GVDD_A 2 P Gate-drive voltage supply, A side GVDD_B 17 I Gate-drive voltage supply, B side M1 13 I Mode-selection 1 (LSB) M2 12 I Mode-selection 2 (MSB) M3 11 I Reserved OC_ADJ 7 I Overcurrent threshold programming OTW 3 O Overtemperature warning. Open drain, active low. OUT_A 28, 29, 30 O Output, half-bridge A OUT_B 25, 26, 27 O Output, half-bridge B
PGND P Power ground PWM_A 6 I PWM for half-bridge A
PWM_B 14 I PWM Input for half-bridge B PVDD_A 34, 35, 36 P PVDD supply for half-bridge A PVDD_B 19, 20, 21 P PVDD supply for half-bridge B RESET 5 I Reset. Active low. SD 4 O Shutdown. Open drain, active low. VDD 15 I Input power supply VREG 10 O Internal voltage regulator
22, 23, 24, 31,
32, 33
I/O DESCRIPTION
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B0101-01
PVDD(0–50V)
Mono
BTL
H-Bridge
Hardwire
Mode
Control
Hardwire
Mode
Control
M1
M1
M2
M2
M3
M3
System
Microcontroller
RESET_H-Bridge
SD
OTW
OTW
SD
RESET
Hardwire
Over-
current
Limit
Hardwire
Over-
current
Limit
PVDD
Power-Supply
Decoupling
PVDD
Power-Supply
Decoupling
GVDD,VDD,
andVREG
Power-Supply
Decoupling
GVDD,VDD,
andVREG
Power-Supply
Decoupling
6
6
6
6
2
2
GVDD(12V)andVDD(12V)
GVDD(12V)andVDD(12V)
GND
GND
PVDD(0–50V)
System
Power
Supplies
50V
12V
GND
AC
Bootstrap
Capacitors
Bootstrap
Capacitors
BST_A
BST_A
BST_B
BST_B
R2
L2
PWM_B
RESET
Shutdown
Overtemp_warning
R1
L1
TAS55XX
Left
Output
Right
Output
PWM_A
H-Bridge
Output
H-Bridge
Output
PVDD_A,B
VDD
VREG
GND
GND
GVDD_A,B
GND_A,B
OC_ADJ
Mono
BTL
H-Bridge
PWM_B
RESET
Shutdown
Overtemp_warning
PWM_A
PVDD_A,B
VDD
VREG
GND
GND
GVDD_A,B
GND_A,B
OC_ADJ
2nd-Order
L-COutput
Filterfor
Each
H-Bridge
2nd-Order
L-COutput
Filterfor
Each
H-Bridge
OUT_A
OUT_A
OUT_B
OUT_B
4–8
(3 Min)
W
W
4–8
(3 Min)
W
W
TAS5261
SLES188 – AUGUST 2006
Figure 1. Typical System Block Diagram
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TEMP
SENSE
M1
M2
AGND
OC_
ADJ
VREG VREG
VDD
GVDD
_B
M3
P
OWER-UP
R
ESET
U
VP
GND
PWM
_B
OUT_B
(x3)
PGND
(x3)
PVDD_B
(x3)
BST_B
TIMING
CONTROL
GATE-DRIVECONTROL
PWM
RECEIVER
OVER-LOAD
PROT
.
GVDD
_A
PWM
ACTIVITY
DETECTOR
CB
3C
GVDD
_B
CURRENT
SENSE
GVDD
_A
PWM
_A
OUT_A(
x3)
PGND
(x3)
PVDD_A(
x3)
BST_A
TIMING
CONTROL
CONTROL GATE-DRIVE
PWM
RECEIVER
PROTECTION & I/O LOGIC
OTW
SD
RESET
TAS5261
SLES188 – AUGUST 2006
Figure 2. Functional Block Diagram
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ORDERING INFORMATION
T
A
0 ° C to 70 ° C TAS5261DKD 36-pin PSOP3
PACKAGE DESCRIPTION
TAS5261
SLES188 – AUGUST 2006

Absolute Maximum Ratings

(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VDD to AGND –0.3 13.2 V GVDD_x to AGND –0.3 13.2 V PVDD_x to PGND_x OUT_x to PGND_x BST_x to PGND_x BST_x to GVDD_x VREG to AGND –0.3 4.2 V PGND_x to GND –0.3 0.3 V PGND_x to AGND –0.3 0.3 V GND to AGND –0.3 0.3 V PWM_x, OC_ADJ, M1, M2, M3 to AGND –0.3 4.2 V RESET, SD, OTW to AGND –0.3 7 V Maximum continuous sink current ( SD, OTW) 9 mA Maximum operating junction temperature range, T Storage temperature range, T Lead temperature 1,6 mm (1/16 in) from case for 10 s 260 ° C Minimum pulse duration, low minimum pulse width must be ensured by the PWM processor 50 ns
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are only stress
ratings, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) These voltages represent the dc voltage + peak ac waveform measured at the terminal of the device in all conditions.
(2)
(2) (2) (2)
J
stg
–0.3 71 V –0.3 71 V –0.3 79.7 V –0.3 66.5 V
0 150 ° C
–65 150 ° C
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