Texas Instruments SN75374D, SN75374DR, SN75374N Datasheet

SN75374

QUADRUPLE MOSFET DRIVER

SLRS028 – SEPTEMBER 1988

• Quadruple Circuits Capable of Driving

High-Capacitance Loads at High Speeds

• Output Supply Voltage Range From 5 V

to 24 V

• Low Standby Power Dissipation

• V

description

logic symbol

Supply Maximizes Output Source

CC3

Voltage

The SN75374 is a quadruple NAND interface circuit designed to drive power MOSFETs from TTL inputs. It provides the high current and voltage necessary to drive large capacitive loads at high speeds.

The outputs can be switched very close to the V

supply rail when V

CC2

than V

CC2

. V

can also be tied directly to V

CC3

is about 3 V higher

CC3

when the source voltage requirements are lower. The SN75374 is characterized for operation from

0°C to 70°C.

†

CC2

D OR N PACKAGE

(TOP VIEW)

V

GND

CC2

1Y

1A 1E1 1E2

2A

2Y

1 2 3 4 5 6 7 8

schematic (each driver)

V

CC1

To Other

Drivers

Input A Enable

E1

Enable

E2

16 15 14 13 12 11 10

V

CC1

4Y 4A 2E2 2E1 3A 3Y

9

V

CC3

V

CC3

V

CC2

Output

Y

4

1E1

5

1E2

12

2E1

13

2E2

3

1A

6

2A

11

3A

14

4A

†

This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12

&

TTL/MOS

(7-48)

EN1

EN2

1

10

2

15

GND

To Other Drivers

logic diagram (positive logic)

2

1Y

7

2Y

3Y

4Y

1E1 1E2

2E1

2E2

1A

2A

3A

4A

4 5 12

13 3

6

11

14

2

7

10

15

1Y

2Y

3Y

4Y

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Copyright  1988, Texas Instruments Incorporated

3–1

SN75374

PACKAGE

A

QUADRUPLE MOSFET DRIVER

SLRS028 – SEPTEMBER 1988

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage range of V Supply voltage range of V Supply voltage range of V

(see Note 1) –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CC1

–0.5 V to 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CC2

–0.5 V to 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CC3

Input voltage, VI 5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak output current, II (tw < 10 ms, duty cycle < 50%) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, TA 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NOTE 1: Voltage values are with respect to network ground terminal.

DISSIPATION RATING T ABLE

T

≤ 25°C DERATING FACTOR T

POWER RATING ABOVE TA = 25°CAPOWER RATING

D 950 mW 7.6 mW/°C 608 mW N 1150 mW 9.2 mW/°C 736 mW

= 70° C

recommended operating conditions

MIN NOM MAX UNIT

Supply voltage, V Supply voltage, V Supply voltage, V Voltage dif ference between supply voltages: V High-level input voltage, V Low-level input voltage, V High-level output current, I High-level output current, I Operating free-air temperature, T

CC1 CC2 CC3

IH

IL

OH OL

A

CC3

– V

CC2

4.75 5 5.25 V

4.75 20 24 V

V

CC2

0 4 10 V 2 V

0 70 °C

24 28 V

0.8 V

–10 mA

40 mA

3–2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

SN75374

VOHHigh-level output voltage

V

VOLLow-level output voltage

V

I

mA

1.5

V

I

V

1

mA

I

g

V

A

I

V

mA

I

y

4

8

I

y

CC1

,

CC2

,

CC3

,

2

0.25

mA

I

y

2.2

3.5

I

y

31

47

I

y

CC1

,

CC2

,

CC3

,

2

mA

I

y

16

27

I

y

,

0.25

V

CC1

5.25 V,

V

CC2

V, V

CC3

V,

A

0.5

I

y

0.25

CC1

CC2 CC3

mA

I

y

0.5

R

g

See Figure 1

QUADRUPLE MOSFET DRIVER

SLRS028 – SEPTEMBER 1988

electrical characteristics over recommended ranges of V temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT

V

IK

F

I

IH

IL

CC1(H)

CC2(H)

CC3(H)

CC1(L)

CC2(L)

CC3(L)

CC2(H)

I

CC3(H)

CC2(S)

CC3(S)

†

All typical values are at V conditions.

Input clamp voltage II = –12 mA –1.5 V

V

p

Output clamp-diode forward voltage

Input current at maximum input voltage

CC1

Any A Any E Any A Any E

= 5 V , V

CC2

High-level input current

low-level input current

Supply current from V

, all outputs high

CC1

Supply current from V V

, all outputs high

CC2

Supply current from V

, all outputs high

CC3

Supply current from V

, all outputs low

CC1

Supply current from V V

, all outputs low

CC2

Supply current from V

, all outputs low

CC1

Supply current from V

, all outputs high

CC2

Supply current from V

, all outputs high

CC3

Supply current from V

, standby condition

CC2

Supply current from V

, standby condition

CC3

= V

CC3

V

= V

CC3

V

= V

CC3

V

= V

CC3

VIH = 2 V, IOL = 10 mA 0.15 0.3 V

= 15 V to 28 V, VIH = 2 V, IOL = 40 mA 0.25 0.5

CC2

= 0,

I

= 5.5

I

= 2.4

I

= 0.4

I

= 5.25 V, V

All inputs at 0 V,

= 5.25 V, V

All inputs at 5 V,

= 5.25 V

V All inputs at 0 V,

V

= 0,

CC1

All inputs at 0 V,

= 20 V , V

+ 3 V, VIL = 0.8 V, IOH = –100 µA V

CC2

+ 3 V, VIL = 0.8 V, IOH = –10 mA V

CC2

, VIL = 0.8 V, IOH = –50 µA V

CC2

, VIL = 0.8 V, IOH = –10 mA V

CC2

= 20

F

= 24 V, V

No load

= 24 V, V

No load

V

= 24 V,V

24

No load

V

= 24 V, V

CC2

No load

= 24 V , and TA = 25°C except for VOH for which V

CC3

CC1

= 28 V,

= 24 V

24

= 24 V,

, V

CC2

, V

CC2 CC2

CC2

, and operating free-air

CC3

–

–0.3 V –1.3 V

–1 V

–2.5 V

and V

CC2

0.1

CC2

–0.9

CC2

–0.7

CC2

–1.8

CC2

–1 –1.6 –2 –3.2

–2.

are as stated under test

CC3

40 80

µ

m

switching characteristics, V

t

DLH

t

DHL

t

PLH

t

PHL

t

TLH

t

THL

= 5 V, V

CC1

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Delay time, low-to-high-level output 20 30 ns Delay time, high-to-low-level output 10 20 ns Propagation delay time, low-to-high-level output Propagation delay time, high-to-low-level output Transition time, low-to-high-level output Transition time, high-to-low-level output 20 30 ns

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

CC2

= 20 V, V

= 24 V, TA = 25°C

CC3

CL = 200 pF

= 24 Ω,

D

See Fi

ure 1

10 40 60 ns 10 30 50 ns

20 30 ns

3–3

SN75374 QUADRUPLE MOSFET DRIVER

SLRS028 – SEPTEMBER 1988

PARAMETER MEASUREMENT INFORMATION

5 V

24 V

20 V

Input

Output

Input

Pulse

Generator

(see Note A)

2.4 V

≤ 10 ns ≤ 10 ns

90% 90%

1.5 V 1.5 V

10%

t

DHL

V

–2 V

CC2

V

TEST CIRCUIT

0.5 µs

t

PHL

t

THL

CC1

V

CC3

GND

t

V

PLH

DLH

CC2

R

D

10%

Output

CL = 200 pF (see Note B)

3 V

0 V

t

TLH

V

–2 V

CC2

V

OH

2 V

VOLTAGE WAVEFORMS

2 V

Figure 1. Test Circuit and Voltage Waveforms, Each Driver

NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, ZO ≈ 50 Ω.

B. CL includes probe and jig capacitance.

V

OL

3–4

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Texas Instruments SN75374D, SN75374DR, SN75374N Datasheet

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