Texas Instruments SN75372D, SN75372DR, SN75372P Datasheet

SN75372

DUAL MOSFET DRIVER

SLLS025A – JULY 1986

Copyright  1986, Texas Instruments Incorporated

Revision Information

3–1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• Dual Circuits Capable of Driving

High-Capacitance Loads at High Speeds

• Output Supply Voltage Range up to 24 V

• Low Standby Power Dissipation

description

The SN75372 is a dual NAND gate interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides high current and voltage
levels necessary to drive large capacitive loads at
high speeds. The device operates from a V

CC1

of

5 V and a V

CC2

of up to 24 V.

The SN75372 is characterized for operation from
0°C to 70°C.

schematic (each driver)

V

CC1

V

CC2

To Other

Driver

To Other
Driver

Output Y

GND

Input A

Enable E

1Y

7

2Y

6

E

2

EN

1A

1

2A

3

logic symbol

†

TTL/MOS

1
2
3
4

8
7
6
5

1A

E

2A

GND

V

CC1

1Y
2Y
V

CC2

D OR P PACKAGE

(TOP VIEW)

†

This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

SN75372
DUAL MOSFET DRIVER

SLLS025A – JULY 1986

3–2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

†

Supply voltage range, V

CC1

(see Note 1) –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Supply voltage range, V

CC2

–0.5 V to 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage, V

I

5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak output current, V

O

(tw < 10 ms, duty cycle < 50%) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

A

0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

stg

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: Voltage values are with respect to network GND.

DISSIPATION RATING TABLE

T

= 25°C DERATING FACTOR T

= 70°C

PACKAGE

A

POWER RATING ABOVE TA = 25°CAPOWER RATING

D 725 mW 5.8 mW/°C 464 mW
P 1000 mW 8.0 mW/°C 640 mW

recommended operating conditions

MIN NOM MAX UNIT

Supply voltage, V

CC1

4.75 5 5.25 V

Supply voltage, V

CC2

4.75 20 24 V

High-level input voltage, V

IH

2 V

Low-level input voltage, V

IL

0.8 V

High-level output current, I

OH

–10 mA

Low-level output current, I

OL

40 mA

Operating free-air temperature, T

A

0 70 °C

SN75372

DUAL MOSFET DRIVER

SLLS025A – JULY 1986

3–3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics over recommended ranges of V

CC1

, V

CC2

, and operating free-air

temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP

†

MAX UNIT

V

IK

Input clamp voltage II = –12 mA –1.5 V

p

VIL = 0.8 V, IOH = –50 µA V

CC2

–1.3 V

CC2

–0.8

VOHHigh-level output voltage

VIL = 0.8 V, IOH = –10 mA V

CC2

–2.5 V

CC2

–1.8

V

VIH = 2 V, IOL = 10 mA 0.15 0.3

V

OL

Low-level output voltage

V

CC2

= 15 V to 24 V,

IOL = 40 mA

VIH = 2 V,

0.25 0.5

V

p

p

VFOutput clamp-diode forward voltage

V

I

= 0,

I

F

= 20

mA

1.5

V

Input current at maximum input

I

I

voltage

V

I

= 5.5

V

1

mA

p

Any A

40

IIHHigh-level input current

Any E

V

I

= 2.4

V

80

µ

A

p

Any A

–1 –1.6

IILLow-level input current

Any E

V

I

= 0.4

V

–2 –3.2

mA

I

CC1(H)

Supply current from V

CC1

, both

outputs high

V

= 5.25 V , V

= 24 V,

2 4 mA

I

CC2(H)

Supply current from V

CC2

, both

outputs high

CC1

,

All inputs at 0 V ,

CC2

,

No load

0.5 mA

I

CC1(L)

Supply current from V

CC1

, both

outputs low

V

= 5.25 V , V

= 24 V,

16 24 mA

I

CC2(L)

Supply current from V

CC2

, both

outputs low

CC1

,

All inputs at 5 V ,

CC2

,

No load

7 13 mA

I

CC2(S)

Supply current from V

CC2

, standby

condition

V

CC1

= 0,

All inputs at 5 V ,

V

CC2

= 24 V,

No load

0.5 mA

†

All typical values are at V

CC1

= 5 V, V

CC2

= 20 V , and TA = 25°C.

switching characteristics, V

CC1

= 5 V, V

CC2

= 20 V, TA = 25°C

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

t

DLH

Delay time, low-to-high-level output 20 35 ns

t

DHL

Delay time, high-to-low-level output 10 20 ns

t

TLH

Transition time, low-to-high-level output

p

20 30 ns

t

THL

Transition time, high-to-low-level output

C

L

=

390 pF

,

R

D

= 10 Ω,

See Figure 1

20 30 ns

t

PLH

Propagation delay time, low-to-high-level output 10 40 65 ns

t

PHL

Propagation delay time, high-to-low-level output 10 30 50 ns

SN75372
DUAL MOSFET DRIVER

SLLS025A – JULY 1986

3–4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

10%

5 V

2.4 V

V

CC1

TEST CIRCUIT

Input

GND

V

CC2

Pulse

Generator

(see Note A)

Output

CL = 390 pF

(see Note B)

20 V

R

D

Input

Output

VOLTAGE WAVEFORMS

≤ 10 ns

90%

1.5 V

0.5 µs

t

DHL

t

TLH

V

CC2

–3 V

2 V

0 V

V

OH

≤ 10 ns

90%

1.5 V

10%

t

PHL

t

PHL

t

DLH

t

THL

V

CC2

–3 V

2 V

V

OL

3 V

NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, ZO ≈ 50 Ω.

B. CL includes probe and jig capacitance.

Figure 1. Test Circuit and Voltage Waveforms, Each Driver

TYPICAL CHARACTERISTICS

–1

HIGH-LEVEL OUTPUT VOLTAGE

vs

HIGH-LEVEL OUTPUT CURRENT

–10 –100

0.3

0.2

0.1

0

0204060

0.4

LOW-LEVEL OUTPUT VOLTAGE

vs

LOW-LEVEL OUTPUT CURRENT

0.5

80 100

V

CC2

–0.5

V

CC2

–1

V

CC2

–1.5

V

CC2

–2

V

CC2

–2.5

V

CC2

–3

V

CC1

= 5 V

V

CC2

= 20 V

VI = 0.8 V

TA = 25°C

TA = 70°C

TA = 0°C

V0H – High-Level Output Voltage – V

V

OH

IOL – Low-Level Output Current – mA

V

CC1

= 5 V

V

CC2

= 20 V

VI = 2 V

TA = 70°C

TA = 0°C

VOL – Low-Level Output Voltage – V

V

OL

IOH – High-Level Output Current – mA

V

CC2

– 0.01 – 0.1

Figure 2 Figure 3