SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
Copyright 1986, Texas Instruments Incorporated
Revision Information
3–1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
• Dual Circuits Capable of Driving
High-Capacitance Loads at High Speeds
• Output Supply Voltage Range up to 24 V
• Low Standby Power Dissipation
description
The SN75372 is a dual NAND gate interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides high current and voltage
levels necessary to drive large capacitive loads at
high speeds. The device operates from a V
CC1
of
5 V and a V
CC2
of up to 24 V.
The SN75372 is characterized for operation from
0°C to 70°C.
schematic (each driver)
V
CC1
V
CC2
To Other
Driver
To Other
Driver
Output Y
GND
Input A
Enable E
1Y
7
2Y
6
E
2
EN
1A
1
2A
3
logic symbol
†
TTL/MOS
1
2
3
4
8
7
6
5
1A
E
2A
GND
V
CC1
1Y
2Y
V
CC2
D OR P PACKAGE
(TOP VIEW)
†
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Supply voltage range, V
CC1
(see Note 1) –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage range, V
CC2
–0.5 V to 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, V
I
5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak output current, V
O
(tw < 10 ms, duty cycle < 50%) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Voltage values are with respect to network GND.
DISSIPATION RATING TABLE
T
= 25°C DERATING FACTOR T
= 70°C
PACKAGE
A
POWER RATING ABOVE TA = 25°CAPOWER RATING
D 725 mW 5.8 mW/°C 464 mW
P 1000 mW 8.0 mW/°C 640 mW
recommended operating conditions
MIN NOM MAX UNIT
Supply voltage, V
CC1
4.75 5 5.25 V
Supply voltage, V
CC2
4.75 20 24 V
High-level input voltage, V
IH
2 V
Low-level input voltage, V
IL
0.8 V
High-level output current, I
OH
–10 mA
Low-level output current, I
OL
40 mA
Operating free-air temperature, T
A
0 70 °C
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of V
CC1
, V
CC2
, and operating free-air
temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP
†
MAX UNIT
V
IK
Input clamp voltage II = –12 mA –1.5 V
p
VIL = 0.8 V, IOH = –50 µA V
CC2
–1.3 V
CC2
–0.8
VOHHigh-level output voltage
VIL = 0.8 V, IOH = –10 mA V
CC2
–2.5 V
CC2
–1.8
V
VIH = 2 V, IOL = 10 mA 0.15 0.3
V
OL
Low-level output voltage
V
CC2
= 15 V to 24 V,
IOL = 40 mA
VIH = 2 V,
0.25 0.5
V
p
p
VFOutput clamp-diode forward voltage
V
I
= 0,
I
F
= 20
mA
1.5
V
Input current at maximum input
I
I
voltage
V
I
= 5.5
V
1
mA
p
Any A
40
IIHHigh-level input current
Any E
V
I
= 2.4
V
80
µ
A
p
Any A
–1 –1.6
IILLow-level input current
Any E
V
I
= 0.4
V
–2 –3.2
mA
I
CC1(H)
Supply current from V
CC1
, both
outputs high
V
= 5.25 V , V
= 24 V,
2 4 mA
I
CC2(H)
Supply current from V
CC2
, both
outputs high
CC1
,
All inputs at 0 V ,
CC2
,
No load
0.5 mA
I
CC1(L)
Supply current from V
CC1
, both
outputs low
V
= 5.25 V , V
= 24 V,
16 24 mA
I
CC2(L)
Supply current from V
CC2
, both
outputs low
CC1
,
All inputs at 5 V ,
CC2
,
No load
7 13 mA
I
CC2(S)
Supply current from V
CC2
, standby
condition
V
CC1
= 0,
All inputs at 5 V ,
V
CC2
= 24 V,
No load
0.5 mA
†
All typical values are at V
CC1
= 5 V, V
CC2
= 20 V , and TA = 25°C.
switching characteristics, V
CC1
= 5 V, V
CC2
= 20 V, TA = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
DLH
Delay time, low-to-high-level output 20 35 ns
t
DHL
Delay time, high-to-low-level output 10 20 ns
t
TLH
Transition time, low-to-high-level output
p
20 30 ns
t
THL
Transition time, high-to-low-level output
C
L
=
390 pF
,
R
D
= 10 Ω,
See Figure 1
20 30 ns
t
PLH
Propagation delay time, low-to-high-level output 10 40 65 ns
t
PHL
Propagation delay time, high-to-low-level output 10 30 50 ns
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
10%
5 V
2.4 V
V
CC1
TEST CIRCUIT
Input
GND
V
CC2
Pulse
Generator
(see Note A)
Output
CL = 390 pF
(see Note B)
20 V
R
D
Input
Output
VOLTAGE WAVEFORMS
≤ 10 ns
90%
1.5 V
0.5 µs
t
DHL
t
TLH
V
CC2
–3 V
2 V
0 V
V
OH
≤ 10 ns
90%
1.5 V
10%
t
PHL
t
PHL
t
DLH
t
THL
V
CC2
–3 V
2 V
V
OL
3 V
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, ZO ≈ 50 Ω.
B. CL includes probe and jig capacitance.
Figure 1. Test Circuit and Voltage Waveforms, Each Driver
TYPICAL CHARACTERISTICS
–1
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
–10 –100
0.3
0.2
0.1
0
0204060
0.4
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0.5
80 100
V
CC2
–0.5
V
CC2
–1
V
CC2
–1.5
V
CC2
–2
V
CC2
–2.5
V
CC2
–3
V
CC1
= 5 V
V
CC2
= 20 V
VI = 0.8 V
TA = 25°C
TA = 70°C
TA = 0°C
V0H – High-Level Output Voltage – V
V
OH
IOL – Low-Level Output Current – mA
V
CC1
= 5 V
V
CC2
= 20 V
VI = 2 V
TA = 70°C
TA = 0°C
VOL – Low-Level Output Voltage – V
V
OL
IOH – High-Level Output Current – mA
V
CC2
– 0.01 – 0.1
Figure 2 Figure 3
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
10 20 40 100 400 1000
f – Frequency – kHz
POWER DISSIPATION (BOTH DRIVERS)
vs
FREQUENCY
200
400
200
0
800
1000
1200
600
12
8
4
0
0 0.5 1 1.5
16
20
VOLTAGE TRANSFER CHARACTERISTICS
24
2 2.5
VI – Input Voltage – V
V) – Output Voltage – V
V
O
V
CC1
= 5 V
V
CC2
= 20 V
No Load
TA = 25°C
V
CC1
= 5 V
V
CC2
= 20 V
Input: 3-V Square Wave
50% Duty Cycle
TA = 25°C
CL = 600 pF
CL = 1000 pF
CL = 2000 pF
CL = 4000 pF
CL = 400 pF
PT – Power Dissipation – mWP
D
Allowable in P Package Only
Figure 4 Figure 5
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
100
80
20
0
0 102030405060
High-to-Low-Level Output – ns
140
180
200
70 80
60
160
120
40
TA – Free-Air Temperature – °C
kSVR – Propagation Delay Time,
t
PLH
Low-to-High-Level Output – ns
kSVR – Propagation Delay Time,
t
PHL
TA – Free-Air Temperature – °C
100
80
20
0
140
180
200
60
160
120
40
0 1020304050607080
CL = 50 pF
CL = 200 pF
CL = 1000 pF
CL = 2000 pF
CL = 4000 pF
V
CC1
= 5 V
V
CC2
= 20 V
RD = 10 Ω
See Figure 1
CL = 4000 pF
CL = 2000 pF
CL = 1000 pF
V
CC1
= 5 V
V
CC2
= 20 V
RD = 10 Ω
See Figure 1
CL = 200 pF
CL = 390 pF
CL = 50 pF
CL = 390 pF
Figure 6 Figure 7
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0 5 10 15
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
V
CC2
SUPPLY VOLTAGE
20 25
100
80
20
0
140
180
200
60
160
120
40
Low-to-High-Level Output – ns
V
CC2
– Supply Voltage – V
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
V
CC2
SUPPLY VOLTAGE
100
80
20
0
140
180
200
60
160
120
40
0 5 10 15 20 25
V
CC2
– Supply Voltage – V
– Propagation Delay Time,
t
PLH
V
CC1
= 5 V
RD = 10 Ω
TA = 25°C
See Figure 1
CL = 2000 pF
CL = 1000 pF
CL = 200 pF CL = 390 pF
CL = 50 pF
V
CC1
= 5 V
RD = 10 Ω
TA = 25°C
See Figure 1
CL = 4000 pF
CL = 2000 pF
CL = 1000 pF
CL = 390 pF
CL = 200 pF
CL = 50 pF
CL = 4000 pF
High-to-Low-Level Output – ns
– Propagation Delay Time,
t
PLH
Figure 8 Figure 9
0 1000 2000 3000 4000
V
CC1
= 5 V
V
CC2
= 20 V
TA = 25°C
See Figure 1
Low-to-High-Level Output – ns
100
80
20
0
140
180
200
60
160
120
40
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
LOAD CAPACITANCE
CL – Load Capacitance – pF
RD = 10 Ω
RD = 0
RD = 24 Ω
100
80
20
0
140
180
200
60
160
120
40
0 1000 2000 3000 4000
CL – Load Capacitance – pF
V
CC1
= 5 V
V
CC2
= 20 V
TA = 25°C
See Figure 1
RD = 24 Ω
RD = 10 Ω
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
LOAD CAPACITANCE
RD = 0
kSVR – Propagation Delay Time,
t
PLH
High-to-Low-Level Output – ns
kSVR – Propagation Delay Time,
t
PLH
Figure 10 Figure 11
NOTE: For RD = 0, operation with CL > 2000 pF violates absolute maximum current rating.
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
THERMAL INFORMATION
power dissipation precautions
Significant power may be dissipated in the SN75372 driver when charging and discharging high-capacitance
loads over a wide voltage range at high frequencies. Figure 5 shows the power dissipated in a typical SN75372
as a function of load capacitance and frequency. Average power dissipated by this driver is derived from the
equation
P
T(AV)
= P
DC(AV)
+ P
C(AV)
= P
S(AV)
where P
DC(A V)
is the steady-state power dissipation with the output high or low, P
C(A V)
is the power level during
charging or discharging of the load capacitance, and P
S(AV)
is the power dissipation during switching between
the low and high levels. None of these include energy transferred to the load, and all are averaged over a full
cycle.
The power components per driver channel are
P
C(AV)
[
CV
2
C
f
t
HL
t
LH
t
H
t
L
T = 1/f
Figure 12. Output Voltage Waveformwhere the times are as defined in Figure 14.
P
DC(AV)
=
PHtH + PLt
L
T
P
S(AV)
=
PLHtLH + PHLt
HL
T
PL, PH, PLH, and PHL are the respective instantaneous levels of power dissipation, C is the load capacitance.
V
C
is the voltage across the load capacitance during the charge cycle shown by the equation
V
C
= VOH – V
OL
P
S(AV)
may be ignored for power calculations at low frequencies.
In the following power calculation, both channels are operating under identical conditions:
V
OH
=19.2 V and VOL = 0.15 V with V
CC1
= 5 V, V
CC2
= 20 V, VC = 19.05 V, C = 1000 pF, and the
duty cycle = 60%. At 0.5 MHz, P
S(AV)
is negligible and can be ignored. When the output voltage is high, I
CC2
is negligible and can be ignored.
On a per-channel basis using data sheet values,
P
DC(AV)
+ƪ(5 V)
ǒ
2mA
2
Ǔ
)
(20 V)
ǒ
0mA
2
Ǔ
ƫ
(0.6)
)ƪ(5 V)
ǒ
16 mA
2
Ǔ
)
(20 V)
ǒ
7mA
2
Ǔ
ƫ
(0.4)
P
DC(AV)
= 47 mW per channel
Power during the charging time of the load capacitance is
P
C(A V )
= (1000 pF) (19.05 V)2 (0.5 MHz) = 182 mW per channel
Total power for each driver is
P
T(AV)
= 47 mW + 182 mW = 229 mW
and total package power is
P
T(AV)
= (229) (2) = 458 mW.
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The
input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance
in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup
resistor is not satisfactory for high-speed applications. In Figure 12(a), an IRF151 power MOSFET switching
an inductive load is driven by an open-collector transistor driver with a 470-Ω pullup resistor. The input
capacitance (C
iss
) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the
combination of C
iss
and the pullup resistor is shown in Figure 12(b).
5 V
7
4
8
3
5
1
2
6
V0H – VOL – Gate Voltage – V
V
OH
TLC555P
1/2 SN75447
470 Ω
48 V
M
V
OL
t – Time – µs
(b)
(a)
IRF151
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3
Figure 13. Power MOSFET Drive Using SN75447
SN75372
DUAL MOSFET DRIVER
SLLS025A – JULY 1986
3–9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
A faster, more efficient drive circuit uses an active pullup as well as an active pulldown output configuration,
referred to as a totem-pole output. The SN75372 driver provides the high speed, totem-pole drive desired in
an application of this type, see Figure 13(a). The resulting faster switching speeds are shown in Figure 13(b).
5 V
TLC555P
1/2 SN75372
M
t – Time – µs
(b)
(a)
IRF151
48 V
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3
V0H – VOL – Gate Voltage – V
V
OH
V
OL
7
48
3
5
12
6
Figure 14. Power MOSFET Drive Using SN75372
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation
Ipk+
VC
t
r
where C is the capacitive load, and t
r
is the desired drive time. V is the voltage that the capacitance is charged
to. In the circuit shown in Figure 13(a), V is found by the equation
V = V
OH
– V
OL
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 13(a) is
IPK+
(3*0)4(10
*
9
)
100(10
*
9
)
+
120 mA
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a V
CC
of 5 V, and assuming worst-cast conditions, the gate drive voltage is 3 V.
For applications in which the full voltage of V
CC2
must be supplied to the MOSFET gate, the SN75374 quad
MOSFET driver should be used.
3–10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
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product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current and complete.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
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TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
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Copyright 1998, Texas Instruments Incorporated
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