Texas Instruments SN74S1053DBR, SN74S1053DW, SN74S1053DWR, SN74S1053N Datasheet
SN74S1053
16-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Designed to Reduce Reflection Noise
D
Repetitive Peak Forward Current to 200 mA
D
16-Bit Array Structure Suited for
Bus-Oriented Systems
D
Package Options Include Plastic
Small-Outline Packages and Standard
Plastic 300-mil DIPs
description
This Schottky barrier diode bus-termination array
is designed to reduce reflection noise on memory
bus lines. This device consists of a 16-bit
high-speed Schottky diode array suitable for
clamping to V
CC
and/or GND.
The SN74S1053 is characterized for operation
from 0°C to 70°C.
schematic diagrams
D012D023D034D045D056D067D078D089D0912D1013D1114D1215D1316D1417D1518D16
19
10
GND11GND
V
CC
1
V
CC
20
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
V
CC
D01
D02
D03
D04
D05
D06
D07
D08
GND
V
CC
D16
D15
D14
D13
D12
D11
D10
D09
GND
DW OR N PACKAGE
(TOP VIEW)
SN74S1053
16-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Steady-state reverse voltage, V
R
7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous forward current, IF: Any D terminal from GND or to VCC 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . .
Total through all GND or VCC terminals 170 mA. . . . . . . . . . . . . . . . . . . . . . .
Repetitive peak forward current‡, I
FRM
: Any D terminal from GND or VCC 200 mA. . . . . . . . . . . . . . . . . . . . .
Total through all GND or V
CC
terminals 1.2 A. . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25°C free-air temperature (see Note 1) 625 mW. . . . . . . . . .
Operating free-air temperature range 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡
These values apply for tw ≤ 100 µs, duty cycle ≤ 20%.
NOTE 1: For operation above 25°C free-air temperature, derate linearly at the rate of 5 m/W/°C.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 2)
PARAMETER TEST CONDITIONS MIN TYP§MAX UNIT
IF = 18 mA 0.85 1.05
To V
CC
IF = 50 mA 1.05 1.3
VFStatic forward voltage
IF = 18 mA 0.75 0.95
V
From GND
IF = 50 mA 0.95 1.2
V
FM
Peak forward voltage IF = 200 mA 1.45 V
To V
CC
5
IRStatic reverse current
From GND
V
R
= 7
V
5
µ
A
p
VR = 0 V, f = 1 MHz 8 16
p
CtTotal capacitance
VR = 2 V, f = 1 MHz 4 8
pF
§
All typical values are at VCC = 5 V, TA = 25°C.
NOTE 2: T est conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER TEST CONDITIONS MIN TYP‡MAX UNIT
Total IF current = 1 A, See Note 3 0.8 2
IxInternal crosstalk current
Total IF current = 198 mA, See Note 3 0.02 0.2
mA
§
All typical values are at VCC = 5 V, TA = 25°C.
NOTE 3: Ix is measured under the following conditions with one diode static, and all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%
Static diode: VR = 5 V
The static diode input current is the internal crosstalk current Ix.
switching characteristics, TA = 25°C (see Figures 1 and 2)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
rr
Reverse recovery time IF = 10 mA, I
RM(REC)
= 10 mA, I
R(REC)
= 1 mA, RL = 100 Ω 8 16 ns
SN74S1053
16-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
90%
10%
DUT
t
r
V
FM
(See Note A) (See Note B)
50 Ω
450 Ω
Pulse
Generator
V
F
Sampling
Oscilloscope
Input Pulse
(See Note A)
Output
Waveform
(See Note B)
NOTES: A. The input pulse is supplied by a pulse generator having the following characteristics: tr = 20 ns, ZO = 50 Ω, freq = 500 Hz,
duty cycle = 1%.
B. The output waveform is monitored by an oscilloscope having the following characteristics: tr ≤ 350 ps, Ri = 50 Ω, Ci ≤ 5 pF.
Figure 1. Forward Recovery Voltage
I
F
DUT
90%
10%
t
f
I
f
Pulse
Generator
(See Note A)
(See Note B)
I
R(REC)
t
rr
I
RM(REC)
Sampling
Oscilloscope
Input Pulse
(See Note A)
Output
Waveform
(See Note B)
0
NOTES: A. The input pulse is supplied by a pulse generator having the following characteristics: tf = 0.5 ns, ZO = 50 Ω, tw ≥ 50 ns,
duty cycle = 1%.
B. The output waveform is monitored by an oscilloscope having the following characteristics: tr ≤ 350 ps, Ri = 50 Ω, Ci ≤ 5 pF.
Figure 2. Reverse Recovery Time
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