Texas Instruments SN74LVC2G241 User Manual

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1Y

1OE

1A

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2Y

2OE

2A

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SCES210O –APRIL 1999–REVISED DECEMBER 2015

SN74LVC2G241 Dual Buffer and Driver With 3-State Outputs

1 Features 3 Description

1

• Available in the Texas Instruments
NanoFree™ Package

• Supports 5-V VCCOperation

• Inputs Accept Voltages to 5.5 V

• Max tpdof 4.1 ns at 3.3 V

• Low Power Consumption, 10-µA Maximum I

CC

• ±24-mA Output Drive at 3.3 V

• Typical V

(Output Ground Bounce)

OLP

<0.8 V at VCC= 3.3 V, TA= 25°C

• Typical V

(Output VOHUndershoot)

OHV

>2 V at VCC= 3.3 V, TA= 25°C

• I

Supports Live Insertion, Partial-Power-Down

off

Mode, and Back-Drive Protection

• Can Be Used as a Down Translator to Translate
Inputs From a Max of 5.5 V Down
to the VCCLevel

• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II

• ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101)

2 Applications

• AV Receivers

• Blu-ray Players and Home Theaters

• DVD Recorders and Players

• Desktop or Notebook PCs

• Digital Radio or Internet Radio Players

• Digital Video Cameras (DVC)

• Embedded PCs

• GPS: Personal Navigation Devices

• Mobile Internet Devices

• Network Projector Front-Ends

• Portable Media Players

• Pro Audio Mixers

This dual buffer and line driver is designed for 1.65-V
to 5.5-V VCCoperation.

The SN74LVC2G241 device is designed specifically
to improve both the performance and density of 3­state memory-address drivers, clock drivers, and bus­oriented receivers and transmitters.

NanoFree package technology is a major
breakthrough in IC packaging concepts, using the die
as the package.

The SN74LVC2G241 device is organized as two 1-bit
line drivers with separate output-enable (1OE, 2OE)
inputs. When 1OE is low and 2OE is high, the device
passes data from the A inputs to the Y outputs. When
1OE is high and 2OE is low, the outputs are in the
high-impedance state.

To ensure the high-impedance state during power up
or power down, OE should be tied to VCCthrough a
pullup resistor, and OE should be tied to GND
through a pulldown resistor; the minimum value of the
resistor is determined by the current-sinking or the
current-sourcing capability of the driver.

This device is fully specified for partial-power-down
applications using I
outputs, preventing damaging current backflow
through the device when it is powered down.

Device Information

PART NUMBER PACKAGE BODY SIZE (NOM)

SN74LVC2G241DCT SM8 (8) 2.95 mm × 2.80 mm
SN74LVC2G241DCU VSOOP (8) 2.30 mm × 2.00 mm
SN74LVC2G241YZP DSBGA (8) 1.91 mm × 0.91 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Logic Diagram (Positive Logic)

. The I

off

SN74LVC2G241

circuitry disables the

off

(1)

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

www.ti.com

Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description ............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ..................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions ...................... 4

6.4 Thermal Information.................................................. 5

6.5 Electrical Characteristics........................................... 5

6.6 Switching Characteristics, TA= –40°C to 85°C ........ 6

6.7 Switching Characteristics, TA= –40°C to 125°C ...... 6

6.8 Operating Characteristics.......................................... 7

6.9 Typical Characteristic................................................ 7

7 Parameter Measurement Information .................. 8

8 Detailed Description .............................................. 9

8.1 Overview ................................................................... 9

8.2 Functional Block Diagram......................................... 9

8.3 Feature Description................................................... 9

8.4 Device Functional Modes.......................................... 9

9 Application and Implementation ........................ 10

9.1 Application Information............................................ 10

9.2 Typical Application ................................................. 10

10 Power Supply Recommendations ..................... 11

11 Layout................................................................... 11

11.1 Layout Guidelines ................................................. 11

11.2 Layout Example .................................................... 11

12 Device and Documentation Support ................. 12

12.1 Documentation Support ........................................ 12

12.2 Community Resources.......................................... 12

12.3 Trademarks........................................................... 12

12.4 Electrostatic Discharge Caution............................ 12

12.5 Glossary................................................................ 12

13 Mechanical, Packaging, and Orderable

Information........................................................... 12

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision N (November 2013) to Revision O Page

• Added Applications section, Device Information table, ESD Ratings table, Thermal Information table, Typical
Characteristics, Feature Description section, Device Functional Modes, Application and Implementation section,
Power Supply Recommendations section, Layout section, Device and Documentation Support section, and

Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1

Changes from Revision M (February 2007) to Revision N Page

• Updated document to new TI data sheet format.................................................................................................................... 1

• Removed Ordering Information table. .................................................................................................................................... 1

• Updated Features................................................................................................................................................................... 1

• Updated operating temperature range. .................................................................................................................................. 4

2 Submit Documentation Feedback Copyright © 1999–2015, Texas Instruments Incorporated

Product Folder Links: SN74LVC2G241

GND

5

4

2A

3

6

1Y2Y

2

7

2OE1A

8

V

CC

1

1OE

1

V

CC

8

1OE

2

7

1A 2OE

3 6

2Y

1Y

4

5

GND

2A

3 6

1Y2Y

8

1

V

CC

1OE

5

GND

4

2A

2

7

2OE1A

www.ti.com

5 Pin Configuration and Functions

SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

DCT Package

8-Pin SM8

Top View

YZP Package
8-Pin DSBGA

Bottom View

(1)(2)

PIN

NAME NO.

Pin Functions

I/O DESCRIPTION

1A 2 I Input
1OE 1 I Output enable (Active low)
1Y 6 O Output
2A 5 I Input
2Y 3 O Output
2OE 7 I Output enable (Active high)
GND 4 — Ground
V

CC

8 — Power pin

(1) N.C. – No internal connection
(2) See Mechanical, Packaging, and Orderable Information for dimensions

DCU Package

8-Pin VSSOP

Top View

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SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

www.ti.com

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

V
V
V
V
I

IK

I

OK

I

O

T
T

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of VCCis provided in the Recommended Operating Conditions table.

Supply voltage –0.5 6.5 V

CC

Input voltage

I

Voltage applied to any output in the high-impedance or power-off state

O

Voltage applied to any output in the high or low state

O

(2)

(2)(3)

Input clamp current VI< 0 –50 mA
Output clamp current VO< 0 –50 mA
Continuous output current ±50 mA
Continuous current through VCCor GND ±100 mA
Maximum junction temperature 150 °C

J

Storage temperature –65 150 °C

stg

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(1)

MIN MAX UNIT

–0.5 6.5 V

(2)

–0.5 6.5 V
–0.5 VCC+ 0.5 V

6.2 ESD Ratings

VALUE UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins
Charged-device model (CDM), per JEDEC specification JESD22-C101, all

(2)

pins

V

(ESD)

Electrostatic
discharge

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

V

Supply voltage V

CC

Operating 1.65 5.5
Data retention only 1.5

(1)

VCC= 1.65 V to 1.95 V 0.65 × V

V

High-level input voltage V

IH

VCC= 2.3 V to 2.7 V 1.7
VCC= 3 V to 3.6 V 2
VCC= 4.5 V to 5.5 V 0.7 × V
VCC= 1.65 V to 1.95 V 0.35 × V

V

Low-level input voltage V

IL

VCC= 2.3 V to 2.7 V 0.7
VCC= 3 V to 3.6 V 0.8
VCC= 4.5 V to 5.5 V 0.3 × V

V

Input voltage 0 5.5 V

I

V

Output voltage V

O

High or low state 0 V
3-state 0 5.5
VCC= 1.65 V –4
VCC= 2.3 V –8

I

High-level output current –16 mA

OH

VCC= 3 V

VCC= 4.5 V –32

(1)

±2000
±1000

MIN MAX UNIT

CC

CC

V

CC

CC

CC

–24

(1) All unused inputs of the device must be held at VCCor GND to ensure proper device operation. Refer to the TI application report

Implications of Slow or Floating CMOS Inputs, SCBA004.

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SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

Recommended Operating Conditions

(1)

(continued)

MIN MAX UNIT

VCC= 1.65 V 4
VCC= 2.3 V 8

I

Low-level output current 16 mA

OL

VCC= 3 V

24
VCC= 4.5 V 32
VCC= 1.8 V ± 0.15 V, 2.5 V ± 0.2 V 20

Δt/Δv Input transition rise or fall rate VCC= 3.3 V ± 0.3 V 10 ns/V

VCC= 5 V ± 0.5 V 5

T

Operating free-air temperature –40 85 °C

A

6.4 Thermal Information

SN74LVC2G241

THERMAL METRIC

(1)

DCT DCU YZP

(SM8) (VSSOP) (DSBGA)

UNIT

8 PINS 8 PINS 8 PINS

R

θJA

Junction-to-ambient thermal resistance 220 227 102 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Electrical Characteristics

over recommended operating free-air temperature range, TA= –40ºC to 125°C (unless otherwise noted)

PARAMETER TEST CONDITIONS V

IOH= –100 µA 1.65 V to 5.5 V VCC– 0.1
IOH= –4 mA 1.65 V 1.2

V

OH

V

OL

I

I

I

off

I

OZ

I

CC

ΔI

CC

C

i

C

o

A or control
inputs

IOH= –8 mA 2.3 V 1.9
IOH= –16 mA 2.4
IOH= –24 mA 2.3
IOH= –32 mA 4.5 V 3.8
IOL= 100 µA 1.65 V to 5.5 V 0.1
IOL= 4 mA 1.65 V 0.45
IOL= 8 mA 2.3 V 0.3
IOL= 16 mA 0.4
IOL= 24 mA 0.55

IOL= 32 mA 4.5 V 0.55

VI= 5.5 V or GND 0 to 5.5 V ±5 µA
VIor VO= 5.5 V 0 ±10 µA

VO= 0 to 5.5 V 3.6 V 10 µA
VI= 5.5 V or GND, IO= 0 1.65 V to 5.5 V 10 µA
One input at VCC– 0.6 V,

Other inputs at VCCor GND
VI= VCCor GND 3.3 V 3.5 pF

VO= VCCor GND 3.3 V 6.5 pF

(1) All typical values are at VCC= 3.3 V, TA= 25°C.

CC

3 V

3 V

3 V to 5.5 V 500 µA

T

A

TA= –40ºC to

85°C

TA= –40ºC to

125°C

TA= –40ºC to

85°C

TA= –40ºC to

85°C

MIN TYP

(1)

MAX UNIT

V

V

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SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

6.6 Switching Characteristics, TA= –40°C to 85°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)

PARAMETER V

t

pd

t

en

t

dis

t

en

t

dis

FROM TO

(INPUT) (OUTPUT)

CC

VCC= 1.8 V ± 0.15 V 3.3 8.8

A Y ns

VCC= 2.5 V ± 0.2 V 1.5 4.8
VCC= 3.3 V ± 0.3 V 1.4 4.3

VCC= 5 V ± 0.5 V 1 3.7

VCC= 1.8 V ± 0.15 V 4 9.9

OE Y ns

VCC= 2.5 V ± 0.2 V 1.9 5.6
VCC= 3.3 V ± 0.3 V 1.2 4.7

VCC= 5 V ± 0.5 V 1.2 3.8

VCC= 1.8 V ± 0.15 V 1.5 11.6

OE Y ns

VCC= 2.5 V ± 0.2 V 1 5.8
VCC= 3.3 V ± 0.3 V 1.4 1.4

VCC= 5 V ± 0.5 V 1 3.4

VCC= 1.8 V ± 0.15 V 3.2 8.8

OE Y ns

VCC= 2.5 V ± 0.2 V 1.5 4.7
VCC= 3.3 V ± 0.3 V 1.6 4.1

VCC= 5 V ± 0.5 V 1.1 3.3

VCC= 1.8 V ± 0.15 V 1.7 12.5

OE Y ns

VCC= 2.5 V ± 0.2 V 1 5.2
VCC= 3.3 V ± 0.3 V 1 4.2

VCC= 5 V ± 0.5 V 1 3.3

www.ti.com

MIN MAX UNIT

6.7 Switching Characteristics, TA= –40°C to 125°C

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 2)

PARAMETER V

t

pd

t

en

t

dis

t

en

t

dis

FROM TO

(INPUT) (OUTPUT)

CC

VCC= 1.8 V ± 0.15 V 3.3 9.8

A Y ns

VCC= 2.5 V ± 0.2 V 1.5 5.8
VCC= 3.3 V ± 0.3 V 1.4 5.3

VCC= 5 V ± 0.5 V 1 4.2

VCC= 1.8 V ± 0.15 V 4 10.9

OE Y ns

VCC= 2.5 V ± 0.2 V 1.9 6.6
VCC= 3.3 V ± 0.3 V 1.2 5.7

VCC= 5 V ± 0.5 V 1.2 4.3

VCC= 1.8 V ± 0.15 V 1.5 12.6

OE Y ns

VCC= 2.5 V ± 0.2 V 1 6.8
VCC= 3.3 V ± 0.3 V 1.4 5.4

VCC= 5 V ± 0.5 V 1 4.4

VCC= 1.8 V ± 0.15 V 3.2 9.8

OE Y ns

VCC= 2.5 V ± 0.2 V 1.5 5.7
VCC= 3.3 V ± 0.3 V 1.6 5.1

VCC= 5 V ± 0.5 V 1.1 3.8

VCC= 1.8 V ± 0.15 V 1.7 13.5

OE Y ns

VCC= 2.5 V ± 0.2 V 1 6.2
VCC= 3.3 V ± 0.3 V 1 5.2

VCC= 5 V ± 0.5 V 1 4.3

MIN MAX UNIT

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0

0.5

1

1.5

2

2.5

3

3.5

0 1 2 3 4 5 6

Propagation Delay (t

PD

)

Supply Voltage [VCC] (V)

Typ. Char.

C001

www.ti.com

6.8 Operating Characteristics

TA= 25°C

PARAMETER TEST CONDITIONS V

Outputs enabled pF

C

Power dissipation
capacitance f = 10 MHz

pd

per buffer/driver

Outputs disabled pF

6.9 Typical Characteristic

SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

CC

VCC= 1.8 V 19
VCC= 2.5 V 19
VCC= 3.3 V 20

VCC= 5 V 22
VCC= 1.8 V 2
VCC= 2.5 V 2
VCC= 3.3 V 2

VCC= 5 V 3

TYP UNIT

Figure 1. tpd vs Vcc Over Full Temperature Range

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t

h

t

su

FromOutput

UnderTest

C

(seeNote A)

L

LOADCIRCUIT

S1

V

LOAD

Open

GND

R

L

DataInput

TimingInput

0V

0V

0V

t

W

Input

0V

Input

Output

Waveform1

S1atV

(seeNoteB)

LOAD

Output

Waveform2

S1atGND

(seeNoteB)

V

OL

V

OH

0V

»0V

Output

Output

TEST S1

t /t

PLH PHL

Open

Output

Control

V

M

V

M

V

M

V

M

V

M

1.8V 0.15V±

2.5V 0.2V±

3.3V 0.3V±
5V 0.5V±

1kW
500 W
500 W
500 W

V

CC

R

L

2× V

CC

2× V

CC

6V

2× V

CC

V

LOAD

C

L

30pF
30pF
50pF
50pF

0.15V

0.15V

0.3V

0.3V

V

D

3V

V

I

VCC/2
VCC/2

1.5V
VCC/2

V

M

£2ns

£2ns
£2.5ns
£2.5ns

INPUTS

R

L

t /t

r f

V

CC

V

CC

V

CC

V

LOAD

t /t

PLZ PZL

GND

t /t

PHZ PZH

VOLTAGEWAVEFORMS

ENABLE ANDDISABLETIMES

LOW- ANDHIGH-LEVEL ENABLING

VOLTAGEWAVEFORMS

PROPAGATIONDELAY TIMES

INVERTING ANDNONINVERTINGOUTPUTS

NOTES: A. C includesprobeandjigcapacitance.

B. Waveform1isforanoutputwithinternalconditionssuchthattheoutputislow,exceptwhendisabledbytheoutputcontrol.

Waveform2isforanoutputwithinternalconditionssuchthattheoutputishigh,exceptwhendisabledbytheoutputcontrol.
C. Allinputpulsesaresuppliedbygeneratorshavingthefollowingcharacteristics:PRR 10MHz,Z =50 .
D. Theoutputsaremeasuredoneatatime,withonetransitionpermeasurement.
E. t andt arethesameast .
F. t andt arethesameast .
G. t andt arethesameast .
H. Allparametersandwaveformsarenotapplicabletoalldevices.

L

O

PLZ PHZ dis

PZL PZH en

PLH PHL pd

£ W

VOLTAGEWAVEFORMS

PULSEDURATION

VOLTAGEWAVEFORMS

SETUP ANDHOLDTIMES

V

I

V

I

V

I

V

M

V

M

V /2

LOAD

t

PZL

t

PLZ

t

PHZ

t

PZH

V – V

OH D

V +V

OL D

V

M

V

M

V

M

V

M

V

OL

V

OH

V

I

V

I

V

OH

V

OL

V

M

V

M

V

M

V

M

t

PLH

t

PHL

t

PLH

t

PHL

SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

7 Parameter Measurement Information

www.ti.com

Figure 2. Load Circuit and Voltage Waveforms

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1

2 6

1Y

1OE

1A

7

5 3

2Y

2OE

2A

SN74LVC2G241

www.ti.com

SCES210O –APRIL 1999–REVISED DECEMBER 2015

8 Detailed Description

8.1 Overview

The SN74LVC2G241 device is designed specifically to improve both the performance and density of 3-state
memory-address drivers, clock drivers, and bus-oriented receivers and transmitters. The SN74LVC2G241 device
is organized as two 1-bit line drivers with separate output-enable (1OE, 2OE) inputs. When 1OE is low and 2OE
is high, the device passes data from the A inputs to the Y outputs. When 1OE is high and 2OE is low, the
outputs are in the high-impedance state.

The SN74LVC2G241 is also an effective redriver, with a maximum output current drive of 32 mA.

8.2 Functional Block Diagram

Figure 3. Logic Diagram (Positive Logic)

8.3 Feature Description

To ensure the high-impedance state during power up or power down, OE should be tied to VCCthrough a pullup
resistor, and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is
determined by the current-sinking or the current-sourcing capability of the driver.

This device is fully specified for partial-power-down applications using I

. The I

off

circuitry disables the outputs,

off

preventing damaging current backflow through the device when it is powered down.

8.4 Device Functional Modes

Table 1 and Table 2 list the functional modes of the SN74LVC2G241.

Table 1. Gate 1 Functional Table

INPUTS

1OE 1A

L H H
L L L

H X Z

Table 2. Gate 2 Functional Table

INPUTS

2OE 2A

H H H
H L L

L X Z

OUTPUT

1Y

OUTPUT

2Y

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SN74LVC2G241

(One driver)

Physical Push

Button

Microproces sor

V

CC

SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

www.ti.com

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

9.1 Application Information

Typical Application shows a simple application where a physical push button is connected to the

SN74LVC2G241. The push button is in a physical location far enough away from the processor that the input
signal is weak and needs to be redriven. The SN74LVC2G241 acts as a redriver, providing a strong input signal
to the processor with as little as 1 ns of propagation delay.

9.2 Typical Application

Figure 4. SN74LVC2G241 Application

9.2.1 Design Requirements

This device uses CMOS technology and has balanced output drive. Take care to avoid bus contention because it
can drive currents that would exceed maximum limits. The high drive also creates fast edges into light loads, so
routing and load conditions must be considered to prevent ringing.

9.2.2 Detailed Design Procedure

1. Recommended Input Conditions
– Rise time and fall time specs. See (Δt/ΔV) in Recommended Operating Conditions.
– Specified high and low levels. See (VIHand VIL) in Recommended Operating Conditions.
– Inputs are overvoltage tolerant allowing them to go as high as (VImax) in Recommended Operating

Conditions at any valid VCC.

2. Recommend Output Conditions
– Load currents must not exceed (IOmax) per output and must not exceed (Continuous current through V

CC

or GND) total current for the part. These limits are located in Absolute Maximum Ratings.

– Outputs must not be pulled above VCCduring normal operation or 5.5 V in high-z state.

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V

CC

Unused Input

Input

Output Output

Input

Unused Input

Frequency - MHz

Icc - µA

0 20 40 60 80

0

200

400

600

800

1000

1200

1400

1600

D001

Icc 1.8V
Icc 2.5V
Icc 3.3V
Icc 5V

SN74LVC2G241

www.ti.com

SCES210O –APRIL 1999–REVISED DECEMBER 2015

Typical Application (continued)

9.2.3 Application Curve

Figure 5. ICCvs Frequency

10 Power Supply Recommendations

The power supply can be any voltage between the minimum and maximum supply voltage rating located in

Recommended Operating Conditions.

Each VCCpin should have a good bypass capacitor to prevent power disturbance. For devices with a single
supply, a 0.1-μF capacitor is recommended and if there are multiple VCCpins then a 0.01-μF or 0.022-μF
capacitor is recommended for each power pin. It is ok to parallel multiple bypass capacitors to reject different
frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor should be
installed as close to the power pin as possible for best results.

11 Layout

11.1 Layout Guidelines

When using multiple bit logic devices inputs must not ever float. In many cases, functions or parts of functions of
digital logic devices are unused; for example, when only two inputs of a triple-input AND gate are used or only 3
of the 4 buffer gates are used. Such input pins must not be left unconnected because the undefined voltages at
the outside connections result in undefined operational states. Specified below are the rules that must be
observed under all circumstances. All unused inputs of digital logic devices must be connected to a high or low
bias to prevent them from floating. The logic level that should be applied to any particular unused input depends
on the function of the device. Generally they will be tied to GND or VCC, whichever make more sense or is more
convenient.

11.2 Layout Example

Copyright © 1999–2015, Texas Instruments Incorporated Submit Documentation Feedback 11

Figure 6. Layout Diagram

Product Folder Links: SN74LVC2G241

SN74LVC2G241

SCES210O –APRIL 1999–REVISED DECEMBER 2015

www.ti.com

12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

For related documentation, see the following:

Implications of Slow or Floating CMOS Inputs, SCBA004

12.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

12.3 Trademarks

NanoFree, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.

12.4 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

12.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser based versions of this data sheet, refer to the left hand navigation.

12 Submit Documentation Feedback Copyright © 1999–2015, Texas Instruments Incorporated

Product Folder Links: SN74LVC2G241

PACKAGE OPTION ADDENDUM

www.ti.com

17-Aug-2015

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing

Pins Package

Qty

Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

74LVC2G241DCTRE4 ACTIVE SM8 DCT 8 3000 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 C41

Z

74LVC2G241DCTRG4 ACTIVE SM8 DCT 8 3000 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 C41

Z

74LVC2G241DCURE4 ACTIVE VSSOP DCU 8 3000 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 C41R

74LVC2G241DCUTE4 ACTIVE VSSOP DCU 8 TBD Call TI Call TI -40 to 125
74LVC2G241DCUTG4 ACTIVE VSSOP DCU 8 250 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 C41R

SN74LVC2G241DCTR ACTIVE SM8 DCT 8 3000 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -40 to 125 C41

Z

SN74LVC2G241DCUR ACTIVE VSSOP DCU 8 3000 Green (RoHS

& no Sb/Br)

CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 125 (C41Q ~ C41R)

SN74LVC2G241DCUT ACTIVE VSSOP DCU 8 250 Green (RoHS

& no Sb/Br)

CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 125 (C41Q ~ C41R)

SN74LVC2G241YZPR ACTIVE DSBGA YZP 8 3000 Green (RoHS

& no Sb/Br)

SNAGCU Level-1-260C-UNLIM -40 to 125 (C2 ~ C27)

(1)

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)

(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

PACKAGE OPTION ADDENDUM

www.ti.com

17-Aug-2015

Addendum-Page 2

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

PACKAGE MATERIALS INFORMATION

www.ti.com 1-Apr-2017

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type

74LVC2G241DCUTG4 VSSOP DCU 8 250 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
SN74LVC2G241DCTR SM8 DCT 8 3000 180.0 13.0 3.35 4.5 1.55 4.0 12.0 Q3
SN74LVC2G241DCUR VSSOP DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
SN74LVC2G241YZPR DSBGA YZP 8 3000 180.0 8.4 1.02 2.02 0.63 4.0 8.0 Q1

Package
Drawing

Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

A0

(mm)B0(mm)K0(mm)P1(mm)W(mm)

Pin1

Quadrant

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com 1-Apr-2017

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

74LVC2G241DCUTG4 VSSOP DCU 8 250 202.0 201.0 28.0
SN74LVC2G241DCTR SM8 DCT 8 3000 182.0 182.0 20.0
SN74LVC2G241DCUR VSSOP DCU 8 3000 202.0 201.0 28.0
SN74LVC2G241YZPR DSBGA YZP 8 3000 210.0 185.0 35.0

Pack Materials-Page 2

MECHANICAL DATA

MPDS049B – MA Y 1999 – REVISED OCT OBER 2002

DCT (R-PDSO-G8) PLASTIC SMALL-OUTLINE P ACKAGE

0,65

PIN 1
INDEX AREA

0,30
0,15

8

1

3,15
2,75

5

2,90
2,70

4

1,30 MAX

M

0,13

4,25
3,75

Seating Plane

0,15 NOM

0° – 8°

Gage Plane

0,25

0,60
0,20

0,10
0,00

NOTES: A. All linear dimensions are in millimeters.

B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion
D. Falls within JEDEC MO-187 variation DA.

0,10

4188781/C 09/02

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

PACKAGE OUTLINE

BALL A1

CORNER

0.5 MAX

0.19

0.15

B E

SCALE 8.000

BALL TYP

DSBGA - 0.5 mm max heightYZP0008

DIE SIZE BALL GRID ARRAY

A

D

C

SEATING PLANE

0.05 C

0.5 TYP

D

C

1.5

TYP

0.5

TYP

0.25

8X

0.21

0.015 C A B

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

B

A

1 2

SYMM

SYMM

D: Max =

E: Max =

1.918 mm, Min =

0.918 mm, Min =

4223082/A 07/2016

1.858 mm

0.858 mm

www.ti.com

EXAMPLE BOARD LAYOUT

DSBGA - 0.5 mm max heightYZP0008

DIE SIZE BALL GRID ARRAY

8X ( 0.23)

(0.5) TYP

(0.5) TYP

1

A

B

C

D

SYMM

2

SYMM

LAND PATTERN EXAMPLE

SCALE:40X

SOLDER MASK

OPENING

NON-SOLDER MASK

DEFINED

(PREFERRED)

0.05 MAX

( 0.23)
METAL

0.05 MIN

SOLDER MASK

DEFINED

( 0.23)
SOLDER MASK
OPENING

SOLDER MASK DETAILS

NOT TO SCALE

NOTES: (continued)

3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.

For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).

METAL UNDER
SOLDER MASK

4223082/A 07/2016

www.ti.com

(0.5) TYP

EXAMPLE STENCIL DESIGN

DSBGA - 0.5 mm max heightYZP0008

DIE SIZE BALL GRID ARRAY

8X ( 0.25)

(0.5)
TYP

METAL

TYP

1

A

B

C

D

SYMM

2

SYMM

SOLDER PASTE EXAMPLE

BASED ON 0.1 mm THICK STENCIL

SCALE:40X

(R0.05) TYP

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

4223082/A 07/2016

www.ti.com

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