Texas Instruments SN74F1056D, SN74F1056DR Datasheet
SN74F1056
8-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDFS085A – AUGUST 1992 – REVISED JUL Y 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Designed to Reduce Reflection Noise
D
Repetitive Peak Forward Current 300 mA
D
8-Bit Array Structure Suited for
Bus-Oriented Systems
description
This Schottky barrier diode bus-termination array
is designed to reduce reflection noise on memory
bus lines. This device consists of an 8-bit
high-speed Schottky diode array suitable for a
clamp to GND.
The SN74F1056 is characterized for operation
from 0°C to 70°C.
schematic diagrams
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1
2
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7
8
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5
15
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GND
GND
GND
GND
GND
GND
GND
GND
D01
D02
D03
D04
D05
D06
D07
D08
D01
D02
D03
D04
D05
D06
D07
D08
SC Package D Package
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SC PACKAGE
(TOP VIEW)
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2
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5
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8
16
15
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9
D01
D02
D03
D04
D05
D06
D07
D08
NC
GND
GND
GND
GND
GND
GND
NC
D PACKAGE
(TOP VIEW)
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2
3
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5
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7
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9
10
D01
D02
D03
D04
GND
GND
D05
D06
D07
D08
SN74F1056
8-BIT SCHOTTKY BARRIER DIODE
BUS-TERMINATION ARRAY
SDFS085A – AUGUST 1992 – REVISED JUL Y 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Steady-state reverse voltage, V
R
7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous forward current, I
F
: Any D terminal from GND 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total through all GND terminals 170 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive peak forward current, I
FRM
(see Note 1): Any D terminal from GND 300 mA. . . . . . . . . . . . . . . . . .
Total through all GND terminals 1.2 A. . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25°C free-air temperature 500 mW. . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: These values apply for tw ≤ 100 µs, duty cycle ≤ 20%.
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
single-diode operation (see Note 2)
PARAMETER TEST CONDITIONS MIN TYP‡MAX UNIT
I
R
Static reverse current VR = 7 V 2 µA
IF = 18 mA 0.8 1
VFStatic forward voltage
IF = 50 mA 1 1.2
V
V
FM
Peak forward voltage IF = 200 mA 1.23 V
p
VR = 0, f = 1 MHz 3 3.75
p
CtTotal capacitance
VR = 2 V, f = 1 MHz 2.5 3
pF
‡
All typical values are at TA = 25°C.
NOTE 2: T est conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER TEST CONDITIONS MIN TYP‡MAX UNIT
I
x
Internal crosstalk current Total GND current = 1.2 A, See Note 3 10 50 µA
‡
All typical values are at TA = 25°C.
NOTE 3: Ix is measured under the following conditions with one diode static, all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%
Static diode: VR = 5 V
The static diode input current is the internal crosstalk current Ix.
switching characteristics, TA = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
t
rr
Reverse recovery time IF = 10 mA, I
RM(REC)
= 10 mA, I
R(REC)
= 1 mA, RL = 100 Ω 5 7 ns
undershoot characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
US
Undershoot voltage
tf = 2 ns, tw = 50 ns, VIH = 5 V, VIL = 0, ZS = 25 Ω, ZO = 50 Ω,
L = 36-inch coax
0.6 0.7 V
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