Texas Instruments SN74F1016DW, SN74F1016DWR Datasheet

SN74F1016
16-BIT SCHOTTKY BARRIER DIODE
R-C BUS-TERMINATION ARRAY
SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993
Copyright 1993, Texas Instruments Incorporated
2–1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Designed to Reduce Reflection Noise
Current . . . 300 mA
16-Bit Array Structure Suited for
Bus-Oriented Systems
description
This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 features a 16-bit R-C network and Schottky barrier diode array. These Schottky diodes provide clamp-to-ground functionality and serve to minimize overshoot and undershoot of high-speed switching buses.
The SN74F1016 is characterized for operation from 0°C to 70°C.
schematic diagram
20 19 18 17 16 15 14 13 12 11
12 3 4 5 6 7 8 910
GND A16 A15 A14 A13 A12 A11 A10 A9 GND
GND A1 A2 A3 A4 A5 A6 A7 A8 GND
Resistor = 50 ± 10% Capacitor = 47 pF ± 10%, VR = 2.5 V, f = 1 MHz Diode = Schottky
DW PACKAGE
(TOP VIEW)
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
GND
A1 A2 A3 A4 A5 A6 A7 A8
GND
GND A16 A15 A14 A13 A12 A1 1 A10 A9 GND
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
SN74F1016 16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY
SDFS093 – NOVEMBER 1992 – REVISED DECEMBER 1993
2–2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Steady-state reverse voltage, V
R
7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous forward current, I
F
: Any D terminal from GND 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total through all GND terminals 170 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive peak forward current, I
FRM
: Any D terminal from GND 300 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total through all GND terminals 1.2 A. . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) 25°C free-air temperature 500 mW. . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
These values apply for tw 100 µs, duty cycle 20%.
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
single-diode operation (see Note 1)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
I
R
Static reverse current VR = 7 V 2 µA
V
FM
Peak forward voltage IF = 200 mA 1.25 V
VR = 0 80
C
t
Total capacitance
VR = 2 V
60
pF
VR = 3 V 55
All typical values are at TA = 25°C.
NOTE 1: T est conditions and limits apply separately to each of the diodes. The diodes not under test are open-circuited during the measurement
of these characteristics.
multiple-diode operation
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
I
x
Internal crosstalk current Total GND current = 1.2 A, See Note 2 10 50 µA
NOTE 2: Ix is measured under the following conditions with one diode static, all others switching:
Switching diodes: tw = 100 µs, duty cycle = 20%; Static diode: VR = 5 V; the static diode input current is the internal crosstalk current Ix.
switching characteristics, TA = 25°C
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
t
rr
Reverse recovery time IF = 10 mA, I
RM(REC)
= 10 mA, I
R(REC)
= 1 mA, RL = 100 8 10 ns
undershoot characteristics
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
V
US
Undershoot voltage
tf = 2 ns, tw = 50 ns, VIH = 5 V, VIL = 0, ZS = 25 , ZO = 50 , L = 36-inch coaxial cable
0.7 0.8 V
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