ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
D
Latch-Up Performance Exceeds 250 mA Per
JESD 17
D
Package Options Include Shrink
Small-Outline (DBQ), Thin Very
Small-Outline (DGV), Small-Outline (DW),
and Thin Shrink Small-Outline (PW)
Packages
description
DBQ, DGV, DW, OR PW PACKAGE
1OE
1B1
1A1
1A2
1B2
1B3
1A3
1A4
1B4
1B5
1A5
GND
(TOP VIEW)
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
9
16
10
15
11
14
12
13
V
CC
2B5
2A5
2A4
2B4
2B3
2A3
2A2
2B2
2B1
2A1
2OE
The SN74CBTLV3384 provides ten bits of
high-speed bus switching. The low on-state
resistance of the switch allows connections to be
made with minimal propagation delay.
The device is organized as dual 5-bit bus switches with separate output-enable (OE) inputs. It can be used as
two 5-bit bus switches or one 10-bit bus switch. When OE is low, the associated 5-bit bus switch is on and A port
is connected to B port. When OE is high, the switch is open, and the high-impedance state exists between the
two ports.
T o ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN74CBTLV3384 is characterized for operation from –40°C to 85°C.
FUNCTION TABLE
(each 5-bit bus switch)
INPUTSINPUTS/OUTPUTS
1OE2OE1B1–1B52B1–2B5
LL1A1–1A52A1–2A5
LH1A1–1A5Z
HLZ2A1–2A5
HHZZ
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 2000, Texas Instruments Incorporated
1
SN74CBTLV3384
LOW-VOLTAGE 10-BIT FET BUS SWITCH
SCDS059D – MARCH 1998 – REVISED FEBRUARY 2000
logic diagram (positive logic)
1A1
1A5
1OE
2A1
2A5
2OE
simplified schematic, each FET switch
3
11
1
14
22
13
SW
SW
SW
SW
10
15
23
2
1B1
1B5
2B1
2B5
A
(OE)
B
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. The package thermal impedance is calculated in accordance with JESD 51.
NOTE 3: All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
V
I
I
I
off
I
CC
∆I
C
C
r
on
†
All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C.
‡
This is the increase in supply current for each input that is at the specified voltage level rather than VCC or GND.
§
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On-state resistance is determined by
the lower of the voltages of the two (A or B) terminals.
Supply voltage2.33.6V
CC
p
p
Operating free-air temperature–4085°C
A
Implications of Slow or Floating CMOS Inputs
PARAMETERTEST CONDITIONSMIN TYP†MAXUNIT
IK
‡
Control inputsVCC = 3.6 V,One input at 3 V,Other inputs at VCC or GND300µA
CC
Control inputsVI = 3 V or 04.5pF
i
io(OFF)
VCC = 3 V,II = –18 mA–1.2V
VCC = 3.6 V,VI = VCC or GND±1µA
VCC = 0,VI or VO = 0 to 3.6 V10µA
VCC = 3.6 V,IO = 0,VI = VCC or GND10µA
VO = 3 V or 0,OE = V
VCC = 2.3 V,
= 2.5
VCC = 3 V
, literature number SCBA004.
CC
=
I
VI = 1.7 V,II = 15 mA2740
=
I
VI = 2.4 V,II = 15 mA1015
II = 64 mA58
II = 24 mA58
II = 64 mA57
II = 24 mA57
VCC = 2.3 V to 2.7 V1.7
VCC = 2.7 V to 3.6 V2
VCC = 2.3 V to 2.7 V0.7
VCC = 2.7 V to 3.6 V0.8
10pF
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figures 1 and 2)
PARAMETER
¶
The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when
driven by an ideal voltage source (zero output impedance).
FROM
¶
t
pd
t
en
t
dis
A or BB or A0.350.25ns
OE
OE
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TO
A or B1514.3ns
A or B15.515.5ns
VCC = 2.5 V
± 0.2 V
MINMAXMINMAX
VCC = 3.3 V
± 0.3 V
UNIT
3
SN74CBTLV3384
LOW-VOLTAGE 10-BIT FET BUS SWITCH
SCDS059D – MARCH 1998 – REVISED FEBRUARY 2000
PARAMETER MEASUREMENT INFORMATION
V
CC
= 2.5 V ± 0.2 V
dis
S1
.
From Output
Under Test
CL = 30 pF
(see Note A)
LOAD CIRCUIT
Input
t
PLH
Output
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2 ns, tf ≤ 2 ns.
D. The outputs are measured one at a time with one transition per measurement.
E. t
F. t
G. t
VCC/2VCC/2
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
PLZ
PZL
PLH
and t
and t
and t
are the same as t
PHZ
are the same as ten.
PZH
are the same as tpd.
PHL
500 Ω
500 Ω
VCC/2VCC/2
t
PHL
2 × V
Open
GND
V
0 V
V
V
CC
CC
OH
OL
Output
Control
(low-level
enabling)
Output
Waveform 1
S1 at 2 × V
(see Note B)
Output
Waveform 2
S1 at GND
(see Note B)
TESTS1
t
pd
t
PLZ/tPZL
t
PHZ/tPZH
t
PZL
CC
t
PZH
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
VCC/2
VCC/2
Open
2 × V
GND
CC
VCC/2VCC/2
t
PLZ
VOL + 0.15 V
t
PHZ
VOH – 0.15 V
V
0 V
V
V
V
0 V
CC
CC
OL
OH
Figure 1. Load Circuit and Voltage Waveforms
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
From Output
Under Test
CL = 50 pF
(see Note A)
PARAMETER MEASUREMENT INFORMATION
500 Ω
500 Ω
LOAD CIRCUIT
S1
= 3.3 V ± 0.3 V
V
CC
2 × V
CC
Open
GND
SN74CBTLV3384
LOW-VOLTAGE 10-BIT FET BUS SWITCH
SCDS059D – MARCH 1998 – REVISED FEBRUARY 2000
TESTS1
Open
2 × V
GND
CC
V
VCC/2VCC/2
CC
0 V
Output
Control
t
pd
t
PLZ/tPZL
t
PHZ/tPZH
Input
t
PLH
Output
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2 ns, tf ≤ 2 ns.
D. The outputs are measured one at a time with one transition per measurement.
E. t
F. t
G. t
VCC/2VCC/2
VCC/2VCC/2
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
PLZ
PZL
PLH
and t
and t
and t
are the same as t
PHZ
are the same as ten.
PZH
are the same as tpd.
PHL
dis
.
Figure 2. Load Circuit and Voltage Waveforms
t
PHL
V
0 V
V
V
CC
OH
OL
Output
Waveform 1
S1 at 2 × V
(see Note B)
Output
Waveform 2
S1 at GND
(see Note B)
t
PZL
CC
t
PZH
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
VCC/2
VCC/2
t
PLZ
VOL + 0.3 V
t
PHZ
VOH – 0.3 V
V
V
V
0 V
CC
OL
OH
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 2000, Texas Instruments Incorporated
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