Texas Instruments SN74BCT2827CDW, SN74BCT2827CDWR, SN74BCT2827CNT Datasheet

SN54BCT2827C, SN74BCT2827C

10-BIT BUS/MOS MEMORY DRIVERS

WITH 3-STATE OUTPUTS

SCBS007E – APRIL 1987 – REVISED NOVEMBER 1993

• BiCMOS Design Substantially Reduces I

• Output Ports Have Equivalent 25-Ω

Resistors; No External Resistors Are
Required

• Specifically Designed to Drive MOS DRAMs

• 3-State Outputs Drive Bus Lines or Buffer

Memory Address Registers

• Flow-Through Architecture Optimizes

PCB Layout

• Power-Up High-Impedance State

• ESD Protection Exceeds 2000 V Per

MIL-STD-883C, Method 3015

• Package Options Include Plastic

Small-Outline (DW) Packages, Ceramic
Chip Carriers (FK) and Flatpacks (W), and
Standard Plastic and Ceramic 300-mil DIPs
(JT, NT)

description

These 10-bit buffers and bus drivers are
specifically designed to drive the capacitive input
characteristics of MOS DRAMs. They provide
high-performance bus interface for wide data
paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with
active-low inputs so if either output-enable (OE1
or OE2) input is high, all ten outputs are in the
high-impedance state. The outputs are also in the
high-impedance state during power-up and
power-down conditions. The outputs remain in the
high-impedance state while the device is powered
down.

CCZ

SN54BCT2827C . . . JT OR W PACKAGE

SN74BCT2827C . . . DW OR NT PACKAGE

SN54BCT2827C . . . FK PACKAGE

A3
A4
A5

NC

A6
A7
A8

NC-No internal connection

OE1

A1
A2
A3
A4
A5
A6
A7
A8
A9

A10

GND

A2A1OE1

4

321

5
6
7
8
9
10
11

13 14

12

A9

(TOP VIEW)

24

1

23

2

22

3

21

4

20

5

19

6

18

7

17

8

16

9

15

10

14

11

13

12

(TOP VIEW)

NC

28 27 26

15 16 17 18

NC

A10

GND

CC

V

OE2

V
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
OE2

Y1

Y10

CC

Y2

25
24
23
22
21
20
19

Y9

Y3
Y4
Y5
NC
Y6
Y7
Y8

The SN54BCT2827C is characterized for opera­tion over the full military temperature range of
–55°C to 125°C. The SN74BCT2827C is
characterized for operation from 0°C to 70°C.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

FUNCTION TABLE

INPUTS

OE1 OE2 A

L L L L

L LH H
H XX Z
X H X Z

OUTPUT

Y

Copyright  1993, Texas Instruments Incorporated

2–1

SN54BCT2827C, SN74BCT2827C
10-BIT BUS/MOS MEMORY DRIVERS
WITH 3-STATE OUTPUTS

SCBS007E – APRIL 1987 – REVISED NOVEMBER 1993

1
13

2
3
4
5
6
7
8
9
10
11

†

&

EN

1

23
22
21
20
19
18
17
16
15
14

logic symbol

OE1
OE2

A1
A2
A3
A4
A5
A6
A7
A8
A9

A10

†

This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.

Pin numbers shown are for the DW, JT, NT, and W packages.

schematic of each output

Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10

logic diagram (positive logic)

1

OE1

13

OE2

223

A1

To Nine Other Channels

Y1

V

CC

GND

Output

2–2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265