Texas Instruments SN74ALVC10D, SN74ALVC10DGVR, SN74ALVC10DR, SN74ALVC10NSR, SN74ALVC10PWR Datasheet

SN74ALVC10

TRIPLE 3-INPUT POSITIVE-NAND GATE

SCES106D – JULY 1997 – REVISED OCT OBER 1998

1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D

EPIC

 (Enhanced-Performance Implanted

CMOS) Submicron Process

D

ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)

D

Latch-Up Performance Exceeds 250 mA
Per JESD 17

D

Package Options Include Plastic
Small-Outline (D), Thin Very Small-Outline
(DGV), and Thin Shrink Small-Outline (PW)
Packages

description

This triple 3-input positive-NAND gate is designed for 1.65-V to 3.6-V VCC operation.
The SN74ALVC10 performs the Boolean function Y = A

• B • C or Y = A + B + C in positive logic.

The SN74ALVC10 is characterized for operation from –40°C to 85°C.

FUNCTION TABLE

(each gate)

INPUTS

OUTPUT

A B C

Y

H H H L
L XX H
XLX H
XXL H

logic symbol

†

&

1

1A

2

1B

13

1C

1Y

12

3

2A

4

2B

5

2C

2Y

6

9

3A

10

3B

11

3C

3Y

8

†

This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.

Copyright  1998, Texas Instruments Incorporated

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

EPIC is a trademark of Texas Instruments Incorporated.

D, DGV, OR PW PACKAGE

(TOP VIEW)

1
2
3
4
5
6
7

14
13
12
11
10

9
8

1A
1B
2A
2B
2C
2Y

GND

V

CC

1C
1Y
3C
3B
3A
3Y

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

SN74ALVC10
TRIPLE 3-INPUT POSITIVE-NAND GATE

SCES106D – JULY 1997 – REVISED OCT OBER 1998

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

logic diagram, each gate (positive logic)

Y

A
B
C

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

†

Supply voltage range, V

CC

–0.5 V to 4.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input voltage range, V

I

(see Note 1) –0.5 V to 4.6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output voltage range, V

O

(see Notes 1 and 2) –0.5 V to VCC + 0.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input clamp current, I

IK

(VI < 0) –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output clamp current, I

OK

(VO < 0) –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous output current, I

O

±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous current through V

CC

or GND ±100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Package thermal impedance, θ

JA

(see Note 3): D package 127°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DGV package 182°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PW package 170°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

stg

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.

2. This value is limited to 4.6 V maximum.

3. The package thermal impedance is calculated in accordance with JESD 51.

recommended operating conditions (see Note 4)

MIN MAX UNIT

V

CC

Supply voltage 1.65 3.6 V

VCC = 1.65 V to 1.95 V 0.65 × V

CC

V

IH

High-level input voltage

VCC = 2.3 V to 2.7 V

1.7

V
VCC = 2.7 V to 3.6 V 2
VCC = 1.65 V to 1.95 V 0.35 × V

CC

V

IL

Low-level input voltage

VCC = 2.3 V to 2.7 V

0.7

V
VCC = 2.7 V to 3.6 V 0.8

V

I

Input voltage 0 V

CC

V

V

O

Output voltage 0 V

CC

V
VCC = 1.65 V –4

p

VCC = 2.3 V –12

IOHHigh-level output current

VCC = 2.7 V –12

mA

VCC = 3 V –24
VCC = 1.65 V 4

p

VCC = 2.3 V 12

IOLLow-level output current

VCC = 2.7 V 12

mA

VCC = 3 V 24

∆t/∆v Input transition rise or fall rate 0 5 ns/V
T

A

Operating free-air temperature –40 85 °C

NOTE 4: All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,

Implications of Slow or Floating CMOS Inputs

, literature number SCBA004.

SN74ALVC10

TRIPLE 3-INPUT POSITIVE-NAND GATE

SCES106D – JULY 1997 – REVISED OCT OBER 1998

3

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)

PARAMETER TEST CONDITIONS

V

CC

MIN TYP†MAX UNIT

IOH = –100 µA 1.65 V to 3.6 V VCC–0.2
IOH = –4 mA 1.65 V 1.2
IOH = –6 mA 2.3 V 2

V

OH

2.3 V 1.7

V

IOH = –12 mA

2.7 V 2.2
3 V 2.4

IOH = –24 mA 3 V 2
IOL = 100 µA 1.65 V to 3.6 V 0.2
IOL = 4 mA 1.65 V 0.45
IOL = 6 mA 2.3 V 0.4

V

OL

2.3 V 0.7

V

I

OL

= 12

mA

2.7 V 0.4

IOL = 24 mA 3 V 0.55

I

I

VI = VCC or GND 3.6 V ±5 µA

I

CC

VI = VCC or GND, IO = 0 3.6 V 10 µA

∆I

CC

One input at VCC – 0.6 V, Other inputs at VCC or GND 3 V to 3.6 V 750 µA

C

i

VI = VCC or GND 3.3 V 4 pF

†

All typical values are at VCC = 3.3 V, TA = 25°C.

switching characteristics over recommended operating free-air temperature range (unless
otherwise noted) (see Figures 1 through 3)

PARAMETER

FROM

TO

VCC = 1.8 V

± 0.15 V

VCC = 2.5 V

± 0.2 V

VCC = 2.7 V

VCC = 3.3 V

± 0.3 V

UNIT

(INPUT)

(OUTPUT)

MIN MAX MIN MAX MIN MAX MIN MAX

t

pd

A, B, or C

Y

1.1 4.8 1 3 3.3 1 3 ns

operating characteristics, T

A

= 25°C

VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V

PARAMETER

TEST CONDITIONS

TYP TYP TYP

UNIT

C

pd

Power dissipation capacitance per gate CL = 0, f = 10 MHz 23 24 26 pF