Texas Instruments SN74ACT2235-20FN, SN74ACT2235-20PAG, SN74ACT2235-20PM, SN74ACT2235-30FN, SN74ACT2235-30FNR Datasheet

...
SN74ACT2235
1024 × 9 × 2
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
Independent Asynchronous Inputs and Outputs
Low-Power Advanced CMOS Technology
Bidirectional
Dual 1024 by 9 Bits
Programmable Almost-Full/Almost-Empty Flag
Empty, Full, and Half-Full Flags
description
A FIFO memory is a storage device that allows data to be written into and read from its array at independent data rates. The SN74ACT2235 is arranged as two 1024 by 9-bit FIFOs for high speed and fast access times. It processes data at rates up to 50 MHz, with access times of 25 ns in a bit-parallel format.
The SN74ACT2235 consists of bus-transceiver circuits, two 1024 × 9 FIFOs, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal FIFO memories. Enable (GAB and GBA) inputs are provided to control the transceiver functions. The select-control (SAB and SBA) inputs are provided to select whether real-time or stored data is transferred. The circuitry used for select control eliminates the typical decoding glitch that occurs in a multiplexer during the transition between stored and real-time data. Figure 2 shows the eight fundamental bus-management functions that can be performed with the SN74ACT2235.
Access Times of 25 ns With a 50-pF Load
Data Rates up to 50 MHz
Fall-Through Times of 22 ns Maximum
High Output Drive for Direct Bus Interface
Package Options Include 44-Pin Plastic Leaded Chip Carriers (FN) and 64-Pin Thin Quad Flat (PAG, PM) Packages
For more information on this device family, see the application report,
SN74ACT2235
, literature number SCAA010.
The SN74ACT2235 is characterized for operation from 0°C to 70°C.
FN PACKAGE
(TOP VIEW)
GAB
SAB
DBF
GNDB0B1
42 41 4043
UNCKA
EMPTY A
B2
39
B3
38
B4
37
V
36
CC
B5
35
B6
34
B7
33
B8
32
GND
31
AF/AEB
30
HFB
29
FULLB
LDCKB
A3 A4
V
CC
A5 A6 A7 A8
GND
AF/AEA
HFA
LDCKA
A2A1A0
7 8 9 10 11 12 13 14 15 16 17
1819
FULLA
GND
GBA
SBA
54321644
20 21 22 23
UNCKB
EMPTYB
DAF
RSTA
24 25 26 27 28
RSTB
1K × 9 × 2 Asynchronous FIFO
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 1998, Texas Instruments Incorporated
1
SN74ACT2235 1024 × 9 × 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
PAG OR PM PACKAGE
(TOP VIEW)
V
CC
A3 A4
V
CC
GND GND
A5 A6
V
CC
V
CC
A7
A8 GND GND
AF/AEA
HFA
CC
V
A1
A0
GND
A2
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
17 18 19 20 21 22 25 26 27 28 29 30 31 322423
NC
FULLA
LDCKA
UNCKB
GBA
GND
DAF
RSTA
EMPTYB
SBA
NC
SAB
GAB
RSTB
GND
DBF
EMPTYA
GNDB1B2
B0
NC
UNCKA
FULLB
LDCKB
V
CC
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33
NC
NC V
CC
B3 B4 GND GND V
CC
B5 B6 V
CC
B7 B8 GND GND AF/AEB HFB
NC – No internal connection
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
SN74ACT2235
1024 × 9 × 2
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
logic symbol
Φ
44
SAB
1
SBA
43
GAB
2
GBA
RSTA
LDCKA
UNCKA
FULLA
EMPTYA
AF/AEA
22 21
DAF
17 26
18 25
15
16
HFA HFB
4
A0
5
A1
6
A2
7
A3
8
A4
10
A5
11
A6
12
A7
13
A8
1
MODE
0 EN1 EN2 Reset A
DEF A FLAG
LDCKA UNCKA
FULLA EMPTY A
ALMOST-FULL/ ALMOST-EMPTY A
HALF-FULL A
0
A Data
8
FIFO
1024 × 9 × 2
SN74ACT2235
RESET B
DEF B FLAG
LDCKB UNCKB
FULL B
EMPTYB
ALMOST-FULL/
ALMOST-EMPTY A
HALF-FULL B
0
B Data
8
23 24 28
19
27 20 30 29
41
40 39 38 37 35 34 33 32
RSTB DBF LDCKB
UNCKB FULLB EMPTYB AF/AEB
B0
B1 B2 B3 B4 B5 B6 B7 B8
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
Pin numbers shown are for the FN package.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
3
SN74ACT2235 1024 × 9 × 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
logic diagram (positive logic)
SAB
SBA
Φ
HFB
AF/AEB
EMPTYB
UNCKB
FIFO B
1024 × 9
RSTB DBF
FULLB LDCKB
GBA
GAB
RSTA
DAF
FULLA
LDCKA
A0
One of Nine Channels
To Other Channels
Φ
FIFO A
1024 × 9
D
Q
Q
One of Nine Channels
D
B0
HFA AF/AEA
EMPTYA UNCKA
To Other Channels
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
I/O
DESCRIPTION
TERMINAL
NAME NO.
AF/AEA AF/AEB
A0–A8
B0–B8
DAF DBF
EMPTYA EMPTYB
FULLA FULLB
HFA HFB
LDCKA LDCKB
GAB GBA
RSTA RSTB
SAB SBA
UNCKA UNCKB
Terminals listed are for the FN package.
15 30
4–8,
10–13
32–35,
37–41
21 24
20 25
18 27
16 29
17 28
2
43 22
23
1
44
19 26
Almost full/almost empty flags. The almost-full/almost-empty A flag (AF/AEA) is defined by the almost-full/almost-empty offset value for FIFO A (X). AF/AEA is high when FIFO A contains X or fewer words
O
or 1024–X words. AF/AEA is low when FIFO A contains between (X + 1) or (1023 – X) words. The operation of the almost-full/almost-empty B flag (AF/AEB) is the same as AF/AEA for FIFO B.
I/O A-data inputs and outputs
I/O B-data inputs and outputs
Define-flag inputs. The high-to-low transition of DAF stores the binary value on A0–A8 as the almost-full/almost-empty offset value for FIFO A (X). The high-to-low transition of DBF
I
of B0–B8 as the almost-full/almost-empty offset value for FIFO B (Y). Empty flags. EMPTYA and EMPTYB are low when their corresponding memories are empty and high when
O
they are not empty. Full flags. FULLA and FULLB are low when their corresponding memories are full and high when they are
O
not full. Half-full flags. HFA and HFB are high when their corresponding memories contain 512 or more words and
O
low when they contain 511 or fewer words. Load clocks. Data on A0–A8 is written into FIFO A on a low-to-high transition of LDCKA. Data on B0–B8 is
written into FIFO B on a low-to-high transition of LDCKB. When the FIFOs are full, LDCKA and LDCKB have
I
no effect on the data residing in memory . Output enables. GAB, GBA control the transceiver functions. When GBA is low, A0–A8 are in the
I
high-impedance state. When GAB is low, B0–B8 are in the high-impedance state. Reset. A reset is accomplished in each direction by taking RSTA and RSTB low. This sets EMPTYA,
I
EMPTYB Select-control inputs. SAB and SBA select whether real-time or stored data is transferred. A low level selects
real-time data and a high level selects stored data. Eight fundamental bus-management functions can be
I
performed as shown in Figure 2. Unload clocks. Data in FIFO A is read to B0–B8 on a low-to-high transition of UNCKB. Data in FIFO B is read
to A0–A8 on a low-to-high transition of UNCKB. When the FIFOs are empty, UNCKA and UNCKB have no
I
effect on data residing in memory.
SN74ACT2235
1024 × 9 × 2
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
Terminal Functions
stores the binary value
, FULLA, FULLB, and AF/AEB high. Both FIFOs must be reset upon power up.
programming procedure for AF/AEA
The almost-full/almost-empty flags (AF/AEA, AF/AEB) are programmed during each reset cycle. The almost-full/almost-empty offset value for FIFO A (X) and for FIFO B (Y) is either a user-defined value or the default values of X = 256 and Y = 256. Below are instructions to program AF/AEA using both methods. AF/AEB is programmed in the same manner for FIFO B.
user-defined X
Take DAF If RSTA With DAF To retain the current offset for the next reset, keep DAF
default X
To redefine AF/AE using the default value of X = 256, hold DAF
from high to low. This stores A0–A8 as X.
is not already low, take RSTA low .
held low, take RSTA high. This defines AF/AEA using X.
low.
high during the reset cycle.Figure 1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
5
6
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
SN74ACT2235
1024 × 9 × 2
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
RSTA
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
DAF
LDCKA
A0–A8
UNCKA
Q0–Q8
EMPTYA
FULLA
HFA
Invalid
Word1Word
2
Word
257
Word
512
Word 1
Word
768
Don’t Care
Word 1024
Word
2
Word
257
Word
258
Word
513
Don’t Care
Word
514
Word
768
Word
769
Word
1024
Word 1024
X
Invalid
AF/AEA
Set Flag to Empty + 256/
Empty + 256
Full – 256 EmptyFull – 256 Half Full Empty + 256
Full – 256 (default)
Operation of FIFO B is identical to that of FIFO A.
Last valid data stays on outputs when FIFO goes empty due to a read.
Figure 1. Timing Diagram for FIFO A
FullHalf Full
Set Flag to
Empty + X/Full – X
Load X into
Flag Register
≤≤
(0 X 511)
SN74ACT2235
1024 × 9 × 2
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
Bus A
Bus A
FIFO A
In
Out In
SABLSBAXGABHGBA
SABXSBALGABLGBA
In
Out
FIFO B
FIFO A
In
Out In
FIFO A
Out
FIFO B
Out
L
H
Bus B
Bus B
Bus A
Bus A
FIFO A
In Out
FIFO B
Out In
SABXSBAXGABLGBA
L
FIFO A
In Out
FIFO B
Out In
SABHSBALGABHGBA
H
FIFO A
In
Out
Bus B
Bus B
Bus A
Bus A
FIFO B
Out In
SABHSBAXGABHGBA
L
FIFO A
In
Out In
SABXSBAHGABLGBA
Out
FIFO B
H
Figure 2. Bus-Management Functions
Bus B
Bus B
Bus A
Bus A
FIFO B
Out In
SABLSBAHGABHGBA
H
FIFO A
In
Out In
SABHSBAHGABHGBA
Out
FIFO B
H
Bus B
Bus B
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
7
SN74ACT2235
UNIT
IOHHigh-level output current
mA
IOLLow-level output current
mA
1024 × 9 × 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
SELECT-MODE CONTROL
CONTROL
SAB SBA A BUS B BUS
L L Real-time B to A bus Real-time A to B bus
L H FIFO B to A bus Real-time A to B bus H L Real-time B to A bus FIFO A to B bus H H FIFO B to A bus FIFO A to B bus
OUTPUT-ENABLE CONTROL
CONTROL
GAB GBA A BUS B BUS
H H A bus enabled B bus enabled
L H A bus enabled Isolation/input to B bus H L Isolation/input to A bus B bus enabled
L L Isolation/input to A bus Isolation/input to B bus
Figure 2. Bus-Management Functions (Continued)
OPERATION
OPERATION
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V Input voltage range, V
CC
: Control inputs –0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I/O ports –0.5 V to 5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range applied to a disabled 3-state output 5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package thermal impedance, θ
(see Note 1): FN package 46°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
PAG package 58°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PM package 67°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T Maximum junction temperature, T
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: The package thermal impedance is calculated in accordance with JESD 51.
stg
150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
–0.5 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
recommended operating conditions
ACT2235-20 ACT2235-30 ACT2235-40 ACT2235-60
MIN MAX MIN MAX MIN MAX MIN MAX
V V V
T
Supply voltage 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 V
CC
High-level input voltage 2 2 2 2 V
IH
Low-level input voltage 0.8 0.8 0.8 0.8 V
IL
p
p
Operating free-air temperature 0 70 0 70 0 70 0 70 °C
A
A or B ports –8 –8 –8 –8 Status flags –8 –8 –8 –8 A or B ports 16 16 16 16 Status flags 8 8 8 8
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
V
V
UNIT
f
Clock frequenc
MH
twPulse duration
ns
SN74ACT2235
1024 × 9 × 2
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
V
OH
Flags VCC = 4.5 V, IOL = 8 mA 0.5
OL
I/O ports VCC = 4.5 V, IOL = 16 mA 0.5
I
I
I
OZ
I
CC
§
I
CC
C
i
C
o
All typical values are at VCC = 5 V, TA = 25°C.
ICC is tested with outputs open.
§
This is the supply current when each input is at one of the specified TTL voltage levels rather than 0 V or VCC.
timing requirements over recommended operating conditions (unless otherwise noted) (see Figure 3)
clock
t
su
t
h
Setup time
Hold time
VCC = 4.5 V, IOH = –8 mA 2.4 V
VCC = 5.5 V, VI = VCC or 0 ±5 µA VCC = 5.5 V, VO = VCC or 0 ±5 µA VI = VCC – 0.2 V or 0 10 400 µA VCC = 5.5 V, One input at 3.4 V , Other inputs at VCC or GND 1 mA VI = 0, f = 1 MHz 4 pF VO = 0, f = 1 MHz 8 pF
’ACT2235-20 ’ACT2235-30 ’ACT2235-40 ’ACT2235-60
MIN MAX MIN MAX MIN MAX MIN MAX
LDCKA or LDCKB 50 33 25 16.7
y
UNCKA or UNCKB RSTA or RSTB low 20 20 25 25 LDCKA or LDCKB low 8 10 14 20 LDCKA or LDCKB high 8 10 14 20 UNCKA or UNCKB low 8 10 14 20 UNCKA or UNCKB high 8 10 14 20 DAF or DBF high 10 10 10 10 Data before LDCKA
or LDCKB Define AF/AE:
D0–D8 before DAF Define AF/AE: DAF
before RSTA Define AF/AE (default):
DAF
or DBF high before
RSTA
or RSTB
RSTA or RSTB inactive (high) before LDCKA or LDCKB
Data after LDCKA or LDCKB 1 1 2 2 Define AF/AE: D0–D8
after DAF Define AF/AE: DAF
after RSTA Define AF/AE (default):
DAF RSTA
or DBF
or DBF high after
or RSTB
or DBF
or DBF
or RSTB
or DBF low
or RSTB
50 33 25 16.7
4 4 5 5
5 5 5 5
7 7 7 7
5 5 5 5
5 5 5 5
0 0 0 0
0 0 0 0
0 0 0 0
ns
ns
z
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
9
SN74ACT2235
PARAMETER
UNIT
f
MH
t
B or A
ns
EMPTYB
PHL
,
B or A
,
CpdPower dissipation capacitance per 1K bits
C
50 pF
pF
1024 × 9 × 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
switching characteristics over recommended ranges of supply voltage and operating free-air temperature, C
max
pd
t
PLH
t
PHL
t
PLH
t
t
pd
t
en
t
dis
All typical values are at VCC = 5 V, TA = 25°C.
These parameters are measured with the internal output state of the storage register opposite that of the bus input.
= 50 pF (unless otherwise noted) (see Figure 3)
L
FROM TO
(INPUT) (OUTPUT)
LDCK 50 33 25 16.7 UNCK 50 33 25 16.7
LDCK,
LDCKB
UNCKA,
UNCKB
LDCK,
LDCKB
UNCKA,
UNCKB
RSTA, RSTB
LDCK,
LDCKB
UNCKA,
UNCKB
RSTA↓, RSTB
LDCK,
LDCKB
UNCKA,
UNCKB
RSTA, RSTB
SAB or SBA
A or B
LDCK,
LDCKB
UNCKA,
UNCKB GBA or GAB A or B 2 11 2 11 2 13 2 15 ns GBA or GAB A or B 1 9 1 9 1 11 1 13 ns
EMPTYA,
EMPTYB
EMPTYA,
FULLA, FULLB 4 15 4 15 4 17 4 19
FULLA, FULLB FULLA, FULLB 2 15 2 15 2 17 2 19
AF/AEA,
AF/AEB
HFA, HFB 2 15 2 15 2 17 2 19
HFA, HFB
AF/AEA,
AF/AEB
’ACT2235-20 ’ACT2235-30 ’ACT2235-40 ’ACT2235-60
MIN TYP†MAX MIN MAX MIN MAX MIN MAX
8 22 8 22 8 24 8 26
12 17 25 12 25 12 35 12 45
4 15 4 15 4 17 4 19 ns
2 17 2 17 2 19 2 21 2 18 2 18 2 20 2 22
4 15 4 15 4 17 4 19
2 15 2 15 2 17 2 19
4 18 4 18 4 20 4 22 1 15 1 15 1 17 1 19
1 11 1 11 1 12 1 14 1 11 1 11 1 12 1 14
2 18 2 18 2 20 2 22
2 18 2 18 2 20 2 22
z
ns
ns
ns
ns
operating characteristics, VCC = 5 V, TA = 25°C
p
10
PARAMETER TEST CONDITIONS TYP UNIT
p
p
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Outputs enabled Outputs disabled
p
,f = 5 MHz
=
L
71 57
p
SN74ACT2235
1024 × 9 × 2
ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
PARAMETER MEASUREMENT INFORMATION
7 V
From Output
Under Test
Timing
Input
Data
Input
Input
t
PLH
Output
S1
CL = 50 pF
(see Note A)
LOAD CIRCUIT
t
su
1.5 V 1.5 V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
1.5 V 1.5 V
1.5 V 1.5 V
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
500
1.5 V
t
h
500
Test Point
t
PHL
3 V
0 V
3 V
0 V
3 V
0 V
V
V
OH
OL
Input
Output
Control
Output
Waveform 1
S1 at 7 V
Output
Waveform 2
S1 at Open
PARAMETER S1
t
t
t
t
1.5 V 1.5 V
VOLTAGE WAVEFORMS
t
PZL
t
PZH
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
PZH
en
t
PZL
t
PHZ
dis
t
PLZ
t
PLH
pd
t
PHL
PULSE DURATION
t
1.5 V
t
1.5 V
PLZ
PHZ
t
w
Open
Closed
Open
Closed
Open Open
1.5 V1.5 V
VOL + 0.3 V
VOH – 0.3 V
3 V
0 V
3 V
0 V
3.5 V
V
OL
V
OH
0 V
NOTE A: CL includes probe and jig capacitance.
Figure 3. Load Circuit and Voltage Waveforms
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
11
SN74ACT2235 1024 × 9 × 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY
SCAS148E – DECEMBER 1990 – REVISED APRIL 1998
TYPICAL CHARACTERISTICS
typ + 8
typ + 6
typ + 4
typ + 2
pd
t – Propagation Delay Time – ns
typ – 2
PROPAGATION DELAY TIME
vs
LOAD CAPACITANCE
VCC = 5 V TA = 25°C RL = 500
typ
0 50 100 200 250150 300
CL – Load Capacitance – pF
Figure 4
POWER-DISSIPATION CAPACITANCE
vs
SUPPLY VOLTAGE
typ + 2
VCC = 5 V fi = 5 MHz
typ + 1
typ – 1
– Power Dissipation Capacitance – pF
typ – 2
pd
C
typ – 3
TA = 25°C
typ
4.5 4.6 4.7 4.9 54.8 5.1 5.2 5.3 5.4 5.5 VCC – Supply Voltage – V
Figure 5
12
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MA Y INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
Loading...