ESD Protection Exceeds 2000 V Per
MIL-STD-883, Method 3015; Exceeds 200 V
Using Machine Model (C = 200 pF, R = 0)
D
Latch-Up Performance Exceeds 500 mA Per
JEDEC Standard JESD-17
D
T ypical V
(Output Ground Bounce) < 1 V
OLP
at VCC = 5 V, TA = 25°C
D
High-Impedance State During Power Up
and Power Down
D
High-Drive Outputs (–32-mA IOH, 64-mA IOL)
D
Package Options Include Plastic
Small-Outline (D), Shrink Small-Outline
(DB), and Thin Shrink Small-Outline (PW)
Packages, Ceramic Chip Carriers (FK),
Ceramic Flat (W) Package, and Plastic (N)
and Ceramic (J) DIPs
description
The ’ABT125 quadruple bus buffer gates feature
independent line drivers with 3-state outputs.
Each output is disabled when the associated
output-enable (OE
When VCC is between 0 and 2.1 V, the device is
in the high-impedance state during power up or
power down. However, to ensure the
high-impedance state above 2.1 V , OE should be
tied to V
through a pullup resistor; the minimum
CC
value of the resistor is determined by the
current-sinking capability of the driver.
) input is high.
SN54ABT125 ...J OR W PACKAGE
SN74ABT125 . . . D, DB, N, OR PW PACKAGE
SN54ABT125 . . . FK PACKAGE
1Y
NC
2OE
NC
2A
NC – No internal connection
(TOP VIEW)
1OE
1A
1Y
2OE
2A
2Y
GND
(TOP VIEW)
3212019
4
5
6
7
8
910111213
1
2
3
4
5
6
7
1A
2Y
1OE
GND
14
13
12
11
10
NC
NC
V
CC
4OE
4A
4Y
3OE
3A
9
3Y
8
CC
V
4OE
18
4A
17
NC
16
4Y
15
NC
14
3OE
3Y
3A
The SN54ABT125 is characterized for operation over the full military temperature range of –55°C to 125°C. The
SN74ABT125 is characterized for operation from –40°C to 85°C.
FUNCTION TABLE
(each buffer)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC-ΙΙB is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
INPUTS
OEA
LHH
LLL
HXZ
OUTPUT
Y
Copyright 1997, Texas Instruments Incorporated
1
SN54ABT125, SN74ABT125
QUADRUPLE BUS BUFFER GATES
WITH 3-STATE OUTPUTS
SCBS182E – FEBRUARY 1997 – REVISED MAY 1997
logic symbol
†
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
Pin numbers shown are for the D, DB, J, N, PW, and W packages.
†
1OE
1A
2OE
2A
3OE
3A
4OE
4A
1
2
4
5
10
9
13
12
EN
1
logic diagram (positive logic)
1
1OE
2
1A1Y
4
2OE
3
3OE
3A3Y
4OE
10
9
13
3
1Y
6
2Y
8
3Y
11
4Y
8
5
2A2Y
Pin numbers shown are for the D, DB, J, N, PW, and W packages.
6
12
4A4Y
11
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stressratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
2. The package thermal impedance is calculated in accordance with EIA/JEDEC Std JESD51, except for through-hole packages,
which use a trace length of zero.
VCC = 0 to 5.5 V,VI = VCC or GND±1±1±1µA
VCC = 0 to 2.1 V, VO = 0.5 V to 2.7 V, OE = X±50±50±50µA
VCC = 2.1 V to 0, VO = 0.5 V to 2.7 V, OE = X±50±50±50µA
VCC = 2.1 V to 5.5 V,VO = 2.7 V, OE ≥ 2 V101010µA
VCC = 2.1 V to 5.5 V,VO = 0.5 V, OE ≥ 2 V–10–10–10µA
VCC = 0,VI or VO ≤ 4.5 V±100±100µA
VCC = 5.5 V,
VO = 5.5 V
VCC = 5.5 V,VO = 2.5 V–50–100–200
=
= 5.5 V,
IO = 0,
VI = VCC or GND
VCC = 5.5 V,
One input at 3.4 V ,
Other inputs at
VCC or GND
VCC = 5.5 V, One input at 3.4 V,
Other inputs at VCC or GND
SN54ABT125, SN74ABT125
QUADRUPLE BUS BUFFER GATES
WITH 3-STATE OUTPUTS
SCBS182E – FEBRUARY 1997 – REVISED MAY 1997
PARAMETER MEASUREMENT INFORMATION
500 Ω
t
w
1.5 V
500 Ω
1.5 V
From Output
Under Test
CL = 50 pF
(see Note A)
LOAD CIRCUIT
Input
Input
Output
Output
INVERTING AND NONINVERTING OUTPUTS
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr ≤ 2.5 ns, tf≤ 2.5 ns.
D. The outputs are measured one at a time with one transition per measurement.
1.5 V
VOLTAGE WAVEFORMS
PULSE DURATION
1.5 V1.5 V
t
PLH
t
PHL
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES
S1
t
PHL
1.5 V
t
PLH
1.5 V1.5 V
3 V
0 V
V
V
V
V
7 V
OH
OL
OH
OL
Open
GND
3 V
0 V
Timing Input
Data Input
Output
Control
Output
Waveform 1
S1 at 7 V
(see Note B)
Output
Waveform 2
S1 at Open
(see Note B)
TESTS1
t
PLH/tPHL
t
PLZ/tPZL
t
PHZ/tPZH
t
su
1.5 V1.5 V
VOLTAGE WAVEFORMS
SETUP AND HOLD TIMES
t
PZL
t
PLZ
1.5 V
t
t
PZH
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
LOW- AND HIGH-LEVEL ENABLING
PHZ
1.5 V
Open
Open
1.5 V
t
7 V
h
1.5 V1.5 V
VOL + 0.3 V
VOH – 0.3 V
3 V
0 V
3 V
0 V
3 V
0 V
3.5 V
V
OL
V
OH
≈ 0 V
Figure 1. Load Circuit and Voltage Waveforms
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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