Essentially Equivalent to Fairchild µA714
Operational Amplifiers
D
Direct Replacement for PMI OP07C and
OP07D
description
symbol
NC–No internal connection
IN
IN –
1
3
+
+
2
–
8
OFFSET N1
OFFSET N2
6
OUT
These devices represent a breakthrough in operational amplifier performance. Low offset and long-term stability
are achieved by means of a low-noise, chopperless, bipolar-input-transistor amplifier circuit. For most
applications, external components are not required for offset nulling and frequency compensation. The true
differential input, with a wide input voltage range and outstanding common-mode rejection, provides maximum
flexibility and performance in high-noise environments and in noninverting applications. Low bias currents and
extremely high input impedances are maintained over the entire temperature range. The OP07 is unsurpassed
for low-noise, high-accuracy amplification of very low-level signals.
These devices are characterized for operation from 0°C to 70°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
0°C to 70°C150 µV
The D package is available taped and reeled. Add the suffix R to the device type (e.g., OP07CDR). The chip
form is tested at TA = 25°C.
AT 25°C
SMALL OUTLINE
(D)
OP07CD
OP07DD
PLASTIC DIP
(P)
OP07CP
OP07DP
(Y)
OP07Y
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
These chips, properly assembled, display characteristics similar to the OP07. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
72
(8)
BONDING PAD ASSIGNMENTS
(7)
(2)
94
IN
IN –
(1)
(3)
+
(2)
(8)
OFFSET N1
(6)
OFFSET N2
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ± 10%.
ALL DIMENSIONS ARE IN MILS.
(3)(1)
(4)
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
V
CC+
(7)
+
–
V
CC–
(4)
(6)
OUT
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematic
OFFSET N1
OP07C, OP07D, OP07Y
PRECISION OPERATIONAL AMPLIFIERS
SLOS099B – OCTOBER 1983 – REVISED AUGUST 1996
7
V
CC +
1
IN +
IN –
8
6
OUT
3
2
28
39
4
4
V
CC –
OFFSET N2
COMPONENT COUNT
Resistors
Transistors
Capacitors
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
Common-mode input voltage, V
Operating free-air temperature, T
CC±
IC
A
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MINMAXUNIT
±3±18V
V
= ±15 V–1313V
CC±
070°C
3
PRECISION OPERATIONAL AMPLIFIERS
PARAMETER
TEST CONDITIONS
†
T
UNIT
VIOInput offset voltage
V
R
Ω
V
IIOInput offset current
nA
IIBInput bias current
nA
V
Common-mode input voltge range
V
VOMPeak output voltage
V
V
±10 V
R
2 kΩ
CMRR
Common-mode rejection ratio
V
±13 V
R
Ω
dB
k
Suppl
oltage sensitivity (∆VIO/∆VCC)
CC±
,
V/V
4
electrical characteristics at specified free-air temperature, VCC ± = ±15 V (unless otherwise noted)
SLOS099B – OCTOBER 1983 – REVISED AUGUST 1996
OP07C, OP97D, OP07Y
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
•
A
p
α
VIO
α
IIO
α
IIB
ICR
A
VD
B
1
r
i
SVS
P
D
†
All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise noted.
NOTE 6: Since long-term drift cannot be measured on the individual devices prior to shipment, this specification is not intended to be a warranty. It is an engineering estimate of the
Temperature coefficient of input offset voltageVO = 0,RS = 50 Ω0°C to 70°C0.51.80.72.5µV/°C
Long-term drift of input offset voltageSee Note 60.40.5µV/mo
Offset adjustment rangeRS = 20 kΩ,See Figure 125°C±4±4mV
p
Temperature coefficient of input offset current0°C to 70°C12501250pA/°C
p
Temperature coefficient of input bias current0°C to 70°C18501850pA/°C
f = 10 Hz10.5
f = 1 kHz10.3
f = 0.1 Hz to 10 Hz9.8
f = 10 Hz0.35
f = 100 Hz0.15
f = 1 kHz0.13
nV/√Hz
pA/√Hz
APPLICATION INFORMATION
OFFSET N1
3
IN +
2
IN –
+
–
1
20 kΩ
OFFSET
N2
8
4
V
CC–
V
CC+
7
6
OUT
Figure 1. Input Offset Voltage Null Circuit
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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