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4.25-Gbps Transimpedance Amplifier With AGC and RSSI
FEATURES APPLICATIONS
• 2.8-GHz Bandwidth
• 3.2-k Ω Differential Transimpedance
• Automatic Gain Control (AGC)
• 8.8-pA/ √ Hz Typical Input Referred Noise
• 2-mA
• Received Signal Strength Indication (RSSI)
• CML Data Outputs With On-Chip 50- Ω
Back-Termination
• On-Chip Supply Filter Capacitor
• Single 3.3-V Supply
• Die Size: 0,78 × 1,18 mm
Maximum Input Current
p-p
ONET4291TA
SLLS670 – SEPTEMBER 2005
• SONET/SDH Transmission Systems at OC24
and OC48
• 4.25-Gbps, 2.125-Gbps, and 1.0625-Gbps
Fiber-Channel Receivers
• Gigabit Ethernet Receivers
• PIN Preamplifier-Receivers
DESCRIPTION
The ONET4291TA is a high-speed transimpedance amplifier used in optical receivers with data rates up to 4.25
Gbps.
It features a low input referred noise, 2.8-GHz bandwidth, automatic gain control (AGC), 3.2-k Ω transimpedance,
and received signal strength indication (RSSI).
The ONET4291TA is available in die form and is optimized for use in a TO can.
The ONET4291TA requires a single 3.3-V supply, and its power-efficient design typically dissipates less than 56
mW. The device is characterized for operation from –40 ° C to 85 ° C ambient temperature.
AVAILABLE OPTIONS
T
A
–40 ° C to 85 ° C ONET4291TAY
DIE
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005, Texas Instruments Incorporated
www.ti.com
B0066-01
OUT+
OUT–
RSSI
V
CC
FILTER
220 W
200 pF
275 pF
DC Input Current
Cancellation,
AGC, and RSSI
Band-Gap Voltage
Reference and
Bias Current
Generation
GND
R
F
IN
Voltage Amplifier
CML Output BufferTransimpedance Amplifier
ONET4291TA
SLLS670 – SEPTEMBER 2005
BLOCK DIAGRAM
The ONET4291TA is a high-performance, 4.25-Gbps transimpedance amplifier consisting of the signal path,
supply filter, a control block for dc input current cancellation, automatic gain control (AGC), received signal
strength indication (RSSI), and a band-gap voltage reference and bias current generation block.
The signal path comprises a transimpedance amplifier stage, a voltage amplifier, and a CML output buffer.
The on-chip filter circuit provides filtered V
input current cancellation and AGC use internal low-pass filters to cancel the dc current on the input and to
adjust the transimpedance amplifier gain. Furthermore, circuitry to monitor the received signal strength is
provided.
A simplified block diagram of the ONET4291TA is shown in Figure 1 .
for the photodiode and for the transimpedance amplifier. The dc
CC
Figure 1. Simplified Block Diagram of the ONET4291TA
SIGNAL PATH
The first stage of the signal path is a transimpedance amplifier that takes the photodiode current and converts it
into a voltage signal.
If the input signal current exceeds a certain value, the transimpedance gain is reduced by means of AGC
circuitry.
The second stage is a voltage amplifier that provides additional gain and converts its single-ended input voltage
into a differential data signal.
The third signal-path stage is the output buffer, which provides CML outputs with on-chip, 50- Ω back-termination
to V
.
CC
2
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ONET4291TA
SLLS670 – SEPTEMBER 2005
FILTER CIRCUITRY
The filter pin provides filtered V
implemented using a filter resistor of 220 Ω and an internal 200-pF capacitor. The corresponding corner
frequency is below 4 MHz.
The supply voltage for the whole amplifier is filtered by means of an on-chip, 275-pF capacitor as well, thus
avoiding the necessity to use an external supply-filter capacitor.
DC INPUT CURRENT CANCELLATION, AGC, AND RSSI
The voltage drop across the internal photodiode supply-filter resistor is monitored by means of a dc input current
cancellation, AGC, and RSSI control circuit block.
If the dc input current exceeds a certain level, it is partially cancelled by means of a controlled current source.
This measure keeps the transimpedance amplifier stage within sufficient operating point limits for optimum
performance. Furthermore, disabling the dc input cancellation at low input currents leads to superior noise
performance.
The AGC circuitry lowers the effective transimpedance feedback resistor R
acting as a controlled shunt. This prevents the transimpedance amplifier from being overdriven at high input
currents, which leads to improved jitter behavior within the complete input-current dynamic range. Because the
voltage drop across the supply-filter resistor is sensed and used by the AGC circuit, the photodiode must be
connected to a FILTER pad for the AGC to function correctly.
Finally, this circuit block senses the current through the filter resistor and generates a mirrored current, which is
proportional to the input signal strength. The mirrored current is available at the RSSI output and must be sunk to
ground (GND) using an external resistor. The RSSI gain can be adjusted by choosing the external resistor;
however, for proper operation, ensure that the voltage at the RSSI pad never exceeds V
for the photodiode bias. The on-chip, low-pass filter for the photodiode V
CC
by means of a MOSFET device
F
– 0.65 V.
CC
is
CC
BAND-GAP VOLTAGE AND BIAS GENERATION
The ONET4291TA transimpedance amplifier is supplied by a single, 3.3-V supply voltage connected to the V
pad. This voltage is referred to GND.
On-chip band-gap voltage circuitry generates a supply-voltage-independent reference from which all other
internally required voltages and bias currents are derived.
CC
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6
10
8
7
9
2
3
1
4291TAA
4
5
M0033-04
GND GND
GND
OUT–
RSSI
GND
OUT+
V
CC
FILTER
IN
ONET4291TA
SLLS670 – SEPTEMBER 2005
BOND PAD ASSIGNMENT
The ONET4291TA is available as a bare die. The locations of the bond pads are shown in the following figure.
PAD
NAME NO.
FILTER 5 Analog V
GND 1, 2, 9, 10 Supply
IN 6 Analog input Data input to TIA (photodiode anode)
OUT+ 3 Analog output Non-inverted data output. On-chip 50- Ω back-terminated to VCC.
OUT– 8 Analog output Inverted data output. On-chip 50- Ω back-terminated to VCC.
RSSI 7 Analog output gain can be adjusted by choosing the external resistor; however, for proper operation, ensure
V
CC
4 Supply 3.3-V, +10%/–12% supply voltage
BOND PAD DESCRIPTION
TYPE DESCRIPTION
Bias voltage for photodiode (cathode). This pads connects through an internal 220- Ω resistor to
and a 200-pF filter capacitor to ground (GND). The FILTER pad(s) must be connected to the
CC
photodiode for the AGC to function.
Circuit ground. All GND pads are connected on die. Bonding all pads is optional; however, for
optimum performance a good ground connection is mandatory.
Analog output current proportional to the input data amplitude. Indicates the strength of the
received signal (RSSI). Must be sunk through an external resistor to ground (GND). The RSSI
that the voltage at the RSSI pad never exceeds V
this pad must be bonded to ground (GND) to ensure proper operation.
– 0.65 V. If the RSSI feature is not used,
CC
4
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ONET4291TA
SLLS670 – SEPTEMBER 2005
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
V
CC
V
, V
OUT–
, V
OUT+
OUT–
FILTER
V
RSSI
I
IN
I
FILTER
I
, I
OUT+
ESD
T
J,max
T
stg
T
A
Supply voltage
, Voltage at FILTER, OUT+, OUT–, RSSI
Current into IN –0.7 mA to 2.5 mA
Current into FILTER – 8 mA to 8 mA
Continuous current at outputs – 8 mA to 8 mA
ESD rating at all pins except IN
ESD rating at IN
Maximum junction temperature 125 ° C
Storage temperature range –65 ° C to 85 ° C
Operating free-air temperature range –40 ° C to 85 ° C
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) For optimum high-frequency performance, the input pin has reduced ESD protection.
(2)
(3)
(3)
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
V
CC
T
A
L
FILTER
L
IN
C
PD
Supply voltage 2.9 3.3 3.6 V
Operating free-air temperature –40 85 ° C
, Wire-bond inductor at pins FILTER and IN 0.8 nH
Photodiode capacitance 0.2 pF
(1)
–0.3 V to 4 V
(2)
–0.3 V to 4 V
1.5 kV (HBM)
300 V (HBM)
MIN NOM MAX UNIT
DC ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted). Typical values are at V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
CC
I
VCC
V
IN
R
OUT
R
FILTER
Supply voltage 2.9 3.3 3.6 V
Supply current mA
Average photodiode current IPD= 0 11 17 25
mA
Input bias voltage 0.85 1.05 V
Output resistance Single-ended to V
CC
Photodiode filter resistance 220 Ω
= 3.3 V and TA= 25 ° C.
CC
40 50 60 Ω
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ONET4291TA
SLLS670 – SEPTEMBER 2005
AC ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted). Typical values are at V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
i
IN-OVL
A
RSSI
Z
21
f
H,3dB
f
L,3dB
f
H,3dB,RSSI
i
N-IN
DJ Deterministic jitter ps
V
OUT,D,MAX
(1) The RSSI output is a current output, which requires a resistive load to ground (GND). The voltage gain can be adjusted for the intended
application by choosing the external resistor. However, for proper operation of the ONET4291TA, ensure that the voltage at RSSI never
exceeds V
(2) The minimum small-signal bandwidth is specified over process corners, temperature, and supply voltage variation. The assumed
photodiode capacitance is 0.2 pF. The bond-wire inductance is 0.8 nH. The small-signal bandwidth strongly depends on environmental
parasitics. Careful attention to layout parasitics and external components is necessary to achieve optimal performance.
(3) Input referred RMS noise is (RMS output noise)/(gain @ 100 MHz). The maximum input referred noise is specified over process
corners, temperature, and supply voltage variation.
(4) At small input currents a significant portion of the deterministic jitter (DJ) is caused by duty-cycle distortion (DCD) due to residual offset
in the output signal. Because the TIA is not limiting, the DCD portion of the DJ is removed by the following limiting amplifier. The given
maximum values include DCD as well as six-sigma margin.
AC input overload current 2 mA
RSSI gain Resistive load to GND
(1)
RSSI output offset current (no light) 15 30 µ A
Small-signal transimpedance Differential output; input current iIN= 2300 3200 3900 Ω
50 µ A
p-p
Small-signal bandwidth iIN= 50 µ A
Low-frequency, –3-dB bandwidth – 3 dB, input current iIN< 50 µ A
(2)
p-p
p-p
RSSI bandwidth 3.5 MHz
Input referred RMS noise 50 kHz–4 GHz
(3)
Input referred noise current density 8.8 pA/ √ Hz
iIN= 50 µ A
iIN= 100 µ A
iIN= 1 mA
iIN= 2 mA
(K28.5 pattern)
p-p
p-p
(K28.5 pattern) 8 28
p-p
(K28.5 pattern) 13 42
p-p
Maximum differential output voltage Input current iIN= 1 mA
– 0.65 V.
CC
(K28.5 pattern)
(4)
(4)
p-p
= 3.3 V and TA= 25 ° C.
CC
0.95 1 1.05 A/A
2.2 2.8 GHz
40 70 kHz
465 590 nA
10 23
10 30
140 200 310 mV
p-p
p-p
p-p
6
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TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
Average Input Current − µA
Input Referred Noise Current − nA
RMS
10 100 1k
G001
TA − Ambient Temperature − °C
0
100
200
300
400
500
600
700
800
−40−30−20−10 0 10 20 30 40 50 60 70 80 90
Input Referred Noise Current − nA
RMS
G002
TA − Ambient Temperature − °C
1000
1500
2000
2500
3000
3500
4000
4500
5000
−40−30−20−10 0 10 20 30 40 50 60 70 80 90
Transimpedance − Ω
G003
Average Input Current − µA
0
500
1000
1500
2000
2500
3000
3500
4000
0 100 200 300 400 500 600 700 800 900 1000
Transimpedance − Ω
G004
Typical operating condition is at V
= 3.3 V and TA= 25 ° C.
CC
ONET4291TA
SLLS670 – SEPTEMBER 2005
UNFILTERER INPUT REFERRED NOISE UNFILTERED INPUT REFERRED NOISE
vs vs
AVERAGE INPUT CURRENT AMBIENT TEMPERATURE
Figure 2. Figure 3.
SMALL-SIGNAL TRANSIMPEDANCE TRANSIMPEDANCE
vs vs
AMBIENT TEMPERATURE AVERAGE INPUT CURRENT
Figure 4. Figure 5.
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TA − Ambient Temperature − °C
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
−40−30−20−10 0 10 20 30 40 50 60 70 80 90
Bandwidth − GHz
G005
56
58
60
62
64
66
68
70
f − Frequency − MHz
Transimpedance − dBΩ
100 1k 10k
G006
Input Current − µA
P−P
0
2
4
6
8
10
12
14
16
0 400 800 1200 1600 2000
Deterministic Jitter − ps
G008
Average Input Current − µA
0
200
400
600
800
1000
1200
0 200 400 600 800 1000 1200
RSSI Output Current − µA
G007
ONET4291TA
SLLS670 – SEPTEMBER 2005
Typical operating condition is at V
TYPICAL CHARACTERISTICS (continued)
= 3.3 V and TA= 25 ° C.
CC
SMALL-SIGNAL BANDWIDTH SMALL-SIGNAL TRANSFER CHARACTERISTICS
vs
AMBIENT TEMPERATURE
Figure 6. Figure 7.
RSSI OUTPUT CURRENT DETERMINISTIC JITTER
vs vs
AVERAGE INPUT CURRENT INPUT CURRENT
8
Figure 8. Figure 9.
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Time − 50 ps/Div
Differential Output Voltage − 10 mV/Div
G009
Time − 50 ps/Div
Differential Output Voltage − 10 mV/Div
G010
Time − 50 ps/Div
Differential Output Voltage − 50 mV/Div
G011
Time − 50 ps/Div
Differential Output Voltage − 50 mV/Div
G012
Typical operating condition is at V
TYPICAL CHARACTERISTICS (continued)
= 3.3 V and TA= 25 ° C.
CC
ONET4291TA
SLLS670 – SEPTEMBER 2005
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 10- µ A
INPUT CURRENT INPUT CURRENT
Figure 10. Figure 11.
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 100- µ A
INPUT CURRENT CURRENT
p-p
p-p
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 20- µ A
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 1-mA
p-p
INPUT
p-p
Figure 12. Figure 13.
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Time − 50 ps/Div
Differential Output Voltage − 50 mV/Div
G013
ONET4291TA
SLLS670 – SEPTEMBER 2005
Typical operating condition is at V
TYPICAL CHARACTERISTICS (continued)
= 3.3 V and TA= 25 ° C.
CC
OUTPUT EYE DIAGRAM AT 4.25 Gbps AND 2-mA
CURRENT
Figure 14.
INPUT
p-p
10
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S0097-02
6
10
87 9
23 1
4
5
V
CC
GND
OUT–
OUT+
RSSI
ONET
4291TA
PAD#1
220 W
200 pF 275 pF
C
0 to 2 pF
Optional
NBW
C
0.1 F2m
C
0.1 F1m
ONET4291TA
SLLS670 – SEPTEMBER 2005
APPLICATION INFORMATION
Figure 15 shows an application circuit for an ONET4291TA being used in a typical fiber-optic receiver. The
ONET4291TA converts the electrical current generated by the PIN photodiode into a differential output voltage.
The FILTER input provides a dc bias voltage for the PIN that is low-pass filtered by the combination of the
internal 220- Ω resistor and 200-pF capacitor. Because the voltage drop across the 220- Ω resistor is sensed and
used by the AGC circuit, the photodiode must be connected to a FILTER pad for the AGC to function correctly.
The RSSI output is used to mirror the photodiode average current and must be connected via a resistor to GND.
The voltage gain can be adjusted for the intended application by choosing the external resistor. However, for
proper operation of the ONET4291TA, ensure that the voltage at RSSI never exceeds V
output is not used, it must be grounded.
The OUT+ and OUT– pads are internally terminated by 50- Ω pullup resistors to V
ac-coupled (e.g., using C1 = C2 = 0.1 µ F) to the succeeding device. An additional capacitor, C
differentially connected between the two output pins OUT+ and OUT–, can be used to limit the noise bandwidth
and thus optimize the noise performance.
– 0.65 V. If the RSSI
CC
. The outputs must be
CC
NBW
, which is
Figure 15. Basic Application Circuit
ASSEMBLY RECOMMENDATIONS
When packaging the ONET4291TA, careful attention to parasitics and external components is necessary to
achieve optimal performance. Recommendations that optimize performance include:
1. Minimize total capacitance on the IN pad by using a low-capacitance photodiode and paying attention to
stray capacitances. Place the photodiode close to the ONET4291TA die to minimize the bond wire length
can be used to limit the noise bandwidth.
NBW
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and GND. Supply-voltage filtering is provided
CC
and thus the parasitic inductance.
2. Use identical termination and symmetrical transmission lines at the ac-coupled differential output pins OUT+
and OUT–. A differential capacitor C
3. Use short bond-wire connections for the supply terminals V
on-chip. Filtering can be improved by using an additional external capacitor.
11
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6
10
8
7
9
2
3
1
4291TAA
4
5
M0033-05
x
y
780 mm
1180 mm
Origin
0,0
M0033-06
x
y
780 mm
1180 mm
Origin
0,0
ET
1TA
PAD#1
ONET4291TA
SLLS670 – SEPTEMBER 2005
CHIP DIMENSIONS AND PAD LOCATIONS
Overall chip dimensions and depiction of the bond-pad locations are given in Figure 16 . Layout of the chip
componentry is shown in Figure 17 .
Figure 16. Chip Dimensions and Pad Locations
12
Figure 17. Chip Layout
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M0034-03
VCC
OUT+
GND
RSSI
OUT–
2.54 mm
Pad Locations and Descriptions for the ONET4291TA
PAD SYMBOL TYPE DESCRIPTION
1 100 1063 GND Supply Circuit ground
2 100 938 GND Supply Circuit ground
3 100 570 OUT+ Analog output Non-inverted data output
4 90 127 V
5 265 127 FILTER Analog Bias voltage for photodiode
6 515 127 IN Analog input Data input to TIA
7 690 127 RSSI Analog output RSSI output signal
8 680 570 OUT– Analog output Inverted data output
9 680 938 GND Supply Circuit ground
10 680 1063 GND Supply Circuit ground
COORDINATES
x ( µ m) y ( µ m)
CC
Supply 3.3-V supply voltage
DIE INFORMATION
Die size: 1180 µ m × 780 µ m
Die thickness: 8 mils (203 µ m)
Pad metallization: 99.5% Al, 0.5% Cu
Pad size: octagonal pads 120 µ m × 100 µ m
Passivation composition: 6000-Å silicon nitride
Backside contact: none
Die ID: 4291TAA
ONET4291TA
SLLS670 – SEPTEMBER 2005
TO46 LAYOUT EXAMPLES
Examples for layouts (top view) in 5-pin and 4-pin TO46 headers are given in Figure 18 and Figure 19 ,
respectively.
Figure 18. TO46 5-Pin Layout Example Using the ONET4291TA
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VCC
OUT–
GND
OUT+
M0034-04
2.54 mm
ONET4291TA
SLLS670 – SEPTEMBER 2005
Figure 19. TO46 4-Pin Layout Example Using the ONET4291TA
14
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PACKAGE OPTION ADDENDUM
www.ti.com
17-Feb-2006
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
ONET4291TAY ACTIVE XCEPT Y 10 1 Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(2)
Lead/Ball Finish MSL Peak Temp
Call TI N / A for Pkg Type
(3)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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