TEXAS INSTRUMENTS MAX3237E Technical data

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1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
C2+
GND
C2−
V− DOUT1 DOUT2 DOUT3
RIN1 RIN2
DOUT4
RIN3
DOUT5
EN
SHDN
C1+ V+ V
CC
C1− DIN1 DIN2 DIN3 ROUT1 ROUT2 DIN4 ROUT3 DIN5 ROUT1B MBAUD
DB, DW, OR PW PACKAGE
(TOP VIEW)
QFN PACKAGE
(TOP VIEW)
C1– DIN1 IN2 DIN3 ROUT1 ROUT2 DIN4 ROUT3
DOUT1 DOUT2 DOUT3
RIN1 RIN2
DOUT4
RIN3
NC
V−
C2–
GND
C2+
C1+V+VCCNC
DOUT5
EN
SHDN
MBAUD
NC
DIN5
NC
1 2 3 4 5 6 7 8
24 23 22 21 20 19 18 17
3132 30 29 28 27 26 25
109 111213 14 15 16
3-V TO 5.5-V MULTICHANNEL RS-232
1-MBit/s LINE DRIVER/RECEIVER
SLLS709A – MAY 2006 – REVISED OCTOBER 2006
FEATURES
Meets or Exceeds the Requirements of ESD Protection for RS-232 I/O Pins and Logic
TIA/EIA-232-F and ITU v.28 Standards Input pins
Operates With 3-V to 5.5-V V
Operates From 250 kbits/s to 1 Mbit/s ± 8 kV IEC61000-4-2, Contact Discharge
Low Standby Current . . . 1 µ A Typical ± 15 kV IEC61000-4-2, Air-Gap Discharge
External Capacitors . . . 4 × 0.1 µ F
Accepts 5-V Logic Input With 3.3-V Supply
Designed to Be Interchangeable With Maxim
MAX3237E
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
Supply ± 15 kV Human-Body Model (HBM)
CC
APPLICATIONS
Battery-Powered, Hand-Held, and Portable
Equipment
PDAs and Palmtop PCs
Notebooks, Sub-Notebooks, and Laptops
Digital Cameras
Mobile Phones and Wireless Devices
MAX3237E
DESCRIPTION
The MAX3237E consists of five line drivers, three line receivers, and a dual charge-pump circuit with ± 15-kV ESD protection pin to pin (serial-port connection pins, including GND). The device meets the requirements of TIA/EIA-232-F and provides the electrical interface between an asynchronous communication controller and the serial-port connector. The charge pump and four small external capacitors allow operation from a single 3-V to
5.5-V supply. This device operates at data signaling rates of 250 kbit/s in normal operating mode (MBAUD = GND) and 1Mbit/s when MBAUD = V
DESCRIPTION (CONTINUED)
The MAX3237E transmitters are disabled and the outputs are forced into high-impedance state when the device is in shutdown mode ( SHDN = GND) and the supply current falls to less than 1 µ A. Also, during shutdown, the onboard charge pump is disabled; V+ is lowered to V can be placed in the high-impedance state by setting enable ( EN) high. ROUT1B remains active all the time, regardless of the EN and SHDN condition.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
. The driver output slew rate is a maximum of 30 V/ µ s.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
CC
, and V– is raised toward GND. Receiver outputs also
CC
Copyright © 2006, Texas Instruments Incorporated
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MAX3237E 3-V TO 5.5-V MULTICHANNEL RS-232 1-MBit/s LINE DRIVER/RECEIVER
SLLS709A – MAY 2006 – REVISED OCTOBER 2006
The MAX3237EC is characterized for operation from 0 ° C to 70 ° C. The MAX3237EI is characterized for operation from –40 ° C to 85 ° C.
AVAILABLE OPTIONS
T
A
0 ° C to 70 ° C
–40 ° C to 85 ° C
FUNCTION TABLE
INPUTS OUTPUTS
SHDN EN DOUT ROUT ROUT1B
0 0 Z 0 1 Z 1 0 Active Active Active 1 1 Active Z
PACKAGED DEVICES
MAX3237ECDBR
MAX3237ECPWR
MAX3237ECRHBR (QFN package)
MAX3237ECDWR
MAX3237EIDBR
MAX3237EIPWR
MAX3237EIRHBR (QFN package)
MAX3237EIDWR
(1) (1)
Active Active
(1)
Z
(1)
Active
Active
(1) Z = high impedance (off)
2
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DIN3
DIN2
DIN1
DOUT3
DOUT2
DOUT1
RIN1
RIN2
RIN3
ROUT1
ROUT1B
ROUT2
ROUT3
24
23
22
21
16
20
18
5
6
7
8
9
DIN4
DOUT4
19 10
DIN5
DOUT5
17 12
13
EN
SHDN
14
MBAUD
15
LOGIC DIAGRAM (POSITIVE LOGIC)
MAX3237E
3-V TO 5.5-V MULTICHANNEL RS-232
1-MBit/s LINE DRIVER/RECEIVER
SLLS709A – MAY 2006 – REVISED OCTOBER 2006
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MAX3237E 3-V TO 5.5-V MULTICHANNEL RS-232 1-MBit/s LINE DRIVER/RECEIVER
SLLS709A – MAY 2006 – REVISED OCTOBER 2006
Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
V
CC
V+ Positive-output supply voltage range V– Negative-output supply voltage range V+ V– Supply voltage difference
V
I
V
O
θ
JA
T
stg
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
(2) All voltages are with respect to network GND. (3) The package thermal impedance is calculated in accordance with JESD 51-7.
Supply voltage range
Input voltage range V
Output voltage range V
Short-circuit duration DOUT to GND Unlimited Package thermal impedance Lead temperature 1,6 mm (1/16 in) from case for 10 s 260 ° C Storage temperature range –65 150 ° C
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
MIN MAX UNIT
(2)
(2)
(2)
(2)
–0.3 6 V –0.3 7 V
0.3 –7 V
Driver ( SHDN, MBAUD, EN) –0.3 6 Receiver –25 25 Driver –13.2 13.2 Receiver –0.3 V
(3)
CC
13 V
+ 0.3
62 ° C/W
Recommended Operating Conditions
(1)
See Figure 5
MIN NOM MAX UNIT
V
= 3.3 V 3 3.3 3.6
Supply voltage V
V
Driver and control high-level input voltage DIN, SHDN, MBAUD, EN V
IH
V
Driver and control low-level input voltage DIN, SHDN, MBAUD, EN 0 0.8 V
IL
V
Receiver input voltage –25 25 V
I
T
Operating free-air temperature ° C
A
(1) Test conditions are C1–C4 = 0.1 µ F at V
Electrical Characteristics
(1)
= 3 V to 5 V.
CC
CC
V
= 5 V 4.5 5 5.5
CC
V
= 3.3 V 2 5.5
CC
V
= 5 V 2.4 5.5
CC
MAX3237EC 0 70 MAX3237EI –40 85
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5 )
PARAMETER TEST CONDITIONS MIN TYP
I
I
I
CC
Input leakage current DIN, SHDN, MBAUD, EN 9 18 µ A
Supply current SHDN = GND 1 10 µ A (T
= 25 ° C)
A
(1) Test conditions are C1–C4 = 0.1 µ F at V (2) All typical values are at V
= 3.3 V or V
CC
Shutdown supply current
= 3 V to 5 V.
CC
= 5 V, and TA= 25 ° C.
CC
No load, SHDN = V
SHDN = RIN = GND, DIN = GND or V
CC
CC
(2)
MAX UNIT
0.5 2 mA
10 300 nA
4
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MAX3237E
3-V TO 5.5-V MULTICHANNEL RS-232
1-MBit/s LINE DRIVER/RECEIVER
SLLS709A – MAY 2006 – REVISED OCTOBER 2006
DRIVER SECTION
xxx
Electrical Characteristics
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5 )
PARAMETER TEST CONDITIONS MIN TYP
V V I I I r
(1) Test conditions are C1–C4 = 0.1 µ F at V (2) All typical values are at V (3) Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one
High-level output voltage DOUT at RL= 3 k to GND, DIN = GND 5 5.4 V
OH
Low-level output voltage DOUT at RL= 3 k to GND, DIN = V
OL
High-level input current VI= V
IH
Low-level input current VIat GND ± 0.01 ± 1 µ A
IL
Short-circuit output current
OS
Output resistance VCC, V+, and V– = 0 V, VO= ± 2 V 300 50k
o
output should be shorted at a time.
= 3.3 V or V
CC
(1)
(2)
MAX UNIT
CC
CC
(3)
V
= 3.6 V or 3.3 V, VO= 0 V ± 60 mA
CC
= 3 V to 5 V.
CC
= 5 V, and TA= 25 ° C.
CC
–5 –5.4 V
± 0.01 ± 1 µ A
Switching Characteristics
(1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Figure 5 )
PARAMETER TEST CONDITIONS MIN TYP
CL= 1000 pF, MBAUD = GND
CL= 1000 pF, Maximum data V rate MBAUD = V
= 4.5 V to 5.5 V, RL= 3 k , 1 DIN switching, 1000
CC
CC
See Figure 1
CL= 250 pF,
V
= 3 V to 4.5 V, 1000
CC
MBAUD = V
t
Pulse skew
sk(p)
(3)
Slew rate, V
SR(tr) transition region RL= 3 k to 7 k , MBAUD = V
CL= 150 pF to 2500 pF, RL= 3 k to 7 k ,
MBAUD = V
CC
(see Figure 1 ) TA= 25 ° C
(1) Test conditions are C1–C4 = 0.1 µ F at V (2) All typical values are at V (3) Pulse skew is defined as |t
= 3.3 V or V
CC
PLH
CC
or GND, See Figure 2
CC
= 3.3 V,
= 3 V to 5 V.
CC
= 5 V, and TA= 25 ° C.
t
CC
| of each channel of the same device.
PHL
CL= 150 pF to 1000 pF
MBAUD = GND 6 30
CL= 150 pF to 2500 pF, MBAUD = GND 4 30
250
CC
24 150 V/ µ s
(2)
MAX UNIT
100 ns
kbit/s
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