Texas Instruments LT1004IDR-2-5, LT1004IDR-1-2, LT1004ID-2-5, LT1004CLP-2-5, LT1004CLP-1-2 Datasheet

...
CHIP
0°C to 70°C
40°C to 85°C
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
D
Initial Accuracy – ±4 mV for LT1004-1.2
D PACKAGE
(TOP VIEW)
±20 mV for LT1004-2.5
D
Micropower Operation
D
Operates up to 20 mA
D
Very Low Reference Impedance
D
Applications: – Portable Meter Reference – Portable Test Instruments – Battery-Operated Systems – Current-Loop Instrumentation
description
The LT1004 micropower voltage reference is a
NC
1
NC
2
NC
3
ANODE
NC – No internal connection T erminals 6 and 8 are internally connected.
4
LP PACKAGE
(TOP VIEW)
CATHODE
8
NC
7
CATHODE
6 5
NC
ANODE CATHODE
two-terminal band-gap reference diode designed to provide high accuracy and excellent temperature characteristics at very low operating currents. Optimizing the key parameters in the design, processing, and testing of the device results in specifications previously attainable only with selected units.
The LT1004 is a pin-for-pin replacement for the LM285 and LM385 series of references, with improved specifications. It is an excellent device for use in systems in which accuracy was previously attained at the expense of power consumption and trimming.
The L T1004C is characterized for operation from 0°C to 70°C. The L T1004I is characterized for operation from –40°C to 85°C.
symbol
ANODE
(A)
AVAILABLE OPTIONS
PACKAGED DEVICES
V
T
A
°
°
For ordering purposes, the decimal point in the part number must be replaced with a hyphen (e.g., show the -1.2 suffix as -1-2 and the -2.5 suffix as -2-5). The D package is available taped and reeled. Add the R suffix to the device type (e.g., LT1004CDR-1-2). Chip forms are tested at 25°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Z
TYP
1.2 V LT1004CD-1.2 LT1004CLP-1.2 LT1004Y-1.2
2.5 V LT1004CD-2.5 LT1004CLP-2.5 LT1004Y-2.5
1.2 V LT1004ID-1.2 LT1004ILP-1.2
2.5 V LT1004ID-2.5 LT1004ILP-2.5
SMALL
OUTLINE
(D)
CATHODE (K)
PLASTIC
(LP)
FORM
(Y)
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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Copyright 1999, Texas Instruments Incorporated
1
LT1004-1.2, LT1004-2.5 MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
schematic
LT1004-1.2
CATHODE
Q1
Q2
20 pF
500 k
7.5 k
Q3
Q5
500
7.5 k
Q4
Q6
20 pF
600 k
60 k
Q11
Q10
Q7
LT1004-2.5
Q12
200 k
50 k
Q9
300 k
Q8
Q13
ANODE
CATHODE
Q12
Q3
Q2
Q1
NOTE A: All component values shown are nominal.
20 pF
500 k
Q5
500
Q4
Q6
60 k
20 pF
600 k
Q7
Q11
Q10
200 k
500 k
50 k
Q9
300 k
Q8
Q13
500 k
ANODE
2
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Operating free-air temperature, T
°C
PARAMETER
T
UNIT
a
t
fficient
25°C
ppm/°C
I
IZ(min) to 1 mA
V
curre
mV
with current
I
mA
Reference impedance
I
100 µA
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Reverse current, IR 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward current, IF 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package thermal impedance, θJA (see Notes 1 and 2): D package 97°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
LP package 156°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Maximum power dissipation is a function of TJ(max),
ambient temperature is PD = (TJ(max) – TA)/
2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace length of zero.
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
θ
, and TA. The maximum allowable power dissipation at any allowable
θ
JA
JA
. Operating at the absolute maximum TJ of 150°C can impact reliability.
recommended operating conditions
MIN MAX UNIT
p
p
A
LT1004C 0 70 LT1004I –40 85
°
electrical characteristics at specified free-air temperature
TEST
CONDITIONS
V
Z
VZ/t
IZ(min)
z
z
V
n
Full range is 0°C to 70°C for the LT1004C and –40°C to 85°C for the LT1004I.
§
The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature range.
Reference voltage IZ = 100 µA
Average
p
V
emperature coe
Z
of reference voltage
Change in reference voltage
Z
with
Long-term change in reference voltage
Minimum reference current
Broadband noise voltage
nt
p
IZ = 10 µA
§
IZ = 20 µA
=
Z
= 1 mA to 20
Z
IZ = 100 µA 25°C 20 20 ppm/khr
=
Z
IZ = 100 µA, f = 10 Hz to 10 kHz
A
25°C 1.231 1.235 1.239 2.48 2.5 2.52
LT1004C 1.225 1.245 2.47 2.53
Full range
LT1004I 1.225 1.245 2.47 2.53
°
25°C 1 1
Full range 1.5 1.5
25°C 10 10
Full range 20 20
Full range 8 10 12 20 µA
25°C 0.2 0.6 0.2 0.6
Full range 1.5 1.5
25°C 60 120 µV
LT1004-1.2 LT1004-2.5
MIN TYP MAX MIN TYP MAX
V
20
pp
20
°
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3
LT1004-1.2, LT1004-2.5
PARAMETER
UNIT
a
g
ppm/°C
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
electrical characteristics, TA = 25°C
TEST
CONDITIONS
V
Z
V
VZ/t Long-term change in reference voltage IZ = 100 µA 20 20 ppm/khr IZ(min) Minimum reference current 8 12 µA z
z
V
n
The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature range.
Reference voltage IZ = 100 µA 1.231 1.235 1.239 2.48 2.5 2.52 V Average temperature coefficient
Z
of reference voltage
Reference impedance IZ = 100 µA 0.2 0.6 0.2 0.6 Broadband noise voltage
IZ = 10 µA 20 IZ = 20 µA 20
IZ = 100 µA, f = 10 Hz to 10 kHz
TYPICAL CHARACTERISTICS
LT1004Y-1.2 LT1004Y-2.5
MIN TYP MAX MIN TYP MAX
pp
60 120 µV
°
Table of Graphs
GRAPH TITLE FIGURE
LT1004x-1.2
Reverse current vs Reverse voltage 1 Reference-voltage change vs Reverse current 2 Forward voltage vs Forward current 3 Reference voltage vs Free-air temperature 4 Reference impedance vs Reference current 5 Noise voltage vs Frequency 6 Filtered output noise voltage vs Cutoff frequency 7
LT1004x-2.5
Transient response 8 Reverse current vs Reverse voltage 9 Forward voltage vs Forward current 10 Reference voltage vs Free-air temperature 11 Reference impedance vs Reference current 12 Noise voltage vs Frequency 13 Filtered output noise voltage vs Cutoff frequency 14 Transient response 15
4
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ÎÎÎÎ
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
TYPICAL CHARACTERISTICS
LT1004x-1.2
REVERSE CURRENT
vs
100
TA = –55°C to 125°C
Aµ
10
– Reverse Current –
1
R
I
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4
REVERSE VOLTAGE
VR – Reverse Voltage – V
REFERENCE-VOLTAGE CHANGE
16
TA = –55°C to 125°C
12
8
4
– Reference Voltage Change – mV
Z
0
V
– 4
LT1004x-1.2
vs
REVERSE CURRENT
IR – Reverse Current – mA
1010.10.01
100
Figure 1
LT1004x-1.2
FORWARD VOLTAGE
vs
FORWARD CURRENT
1.2 TA = 25°C
1
0.8
0.6
– Forward Voltage – V
0.4
F
V
0.2
0
0.01 0.1 1 10 100 IF – Forward Current – mA
1.245
1.24
1.235
1.23
– Reference Voltage – V
Z
V
1.225
Figure 2
LT1004x-1.2
REFERENCE VOLTAGE
vs
FREE-AIR TEMPERATURE
IZ = 100 µA
125105856545255–15–35–55
TA – Free-Air Temperature – °C
Figure 3
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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Figure 4
5
LT1004-1.2, LT1004-2.5 MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
REFERENCE IMPEDANCE
REFERENCE CURRENT
100
10
1
– Reference Impedance –
z
z
0.1
IZ – Reference Current – mA
LT1004x-1.2
vs
f = 25 Hz TA = –55°C to 125°C
TYPICAL CHARACTERISTICS
700
IZ = 100 µA
600
TA = 25°C
500
nV/ Hz
400
300
200
– Noise Voltage –
n
V
100
0
1001010.10.01
10 100 1 k 10 k 100 k
LT1004x-1.2
NOISE VOLTAGE
vs
FREQUENCY
f – Frequency – Hz
70
60
µV
50
40
30
20
Filtered Output Noise Voltage –
10
0
Figure 5
TL1004x-1.2
FILTERED OUTPUT NOISE VOLTAGE
vs
CUTOFF FREQUENCY
IZ = 100 µA TA = 25°C
100 µA
R
C
Cutoff Frequency – kHz
RC Low Pass
Figure 6
LT1004x-2.5
TRANSIENT RESPONSE
2
1.5
1
0.5
0
Input and Output Voltages – V
5
0
1001010.1
Output
36 k
V
I
Input
t – Time – µs
V
O
6005001000
Figure 7
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
6
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Figure 8
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
TYPICAL CHARACTERISTICS
LT1004x-2.5
REVERSE CURRENT
vs
REVERSE VOLTAGE
100
TA = –55°C to 125°C
Aµ
10
1
– Reverse Current –I
R
0.1
VR – Reverse Voltage – V
32.521.510.50
1.2
1
0.8
0.6
– Forward Voltage – VV
0.4
F
0.2
0
0.01
LT1004x-2.5
FORWARD VOLTAGE
vs
FORWARD CURRENT
TA = 25°C
1001010.1
IF – Forward Current – mA
Figure 9
– Reference Voltage – VV
Figure 10
LT1004x-2.5
REFERENCE VOLTAGE
vs
FREE-AIR TEMPERATURE
2.52 IZ = 100 µA
2.515
2.51
2.505
2.5
2.495
2.49
Z
2.485
2.48
2.475 –55
TA – Free-Air Temperature – °C
125105856545255–15–35
Figure 11
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
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7
LT1004-1.2, LT1004-2.5 MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
– Reference Impedance –
z
1000
100
z
f = 25 Hz TA = –55°C to 125°C
10
1
0.1
TYPICAL CHARACTERISTICS
LT1004x-2.5
REFERENCE IMPEDANCE
vs
REFERENCE CURRENT
IZ – Reference Current – mA
LT1004x-2.5
NOISE VOLTAGE
vs
1400
IZ = 100 µA
1200
1000
nV/ Hz
800
600
400
– Noise Voltage –
n
V
200
1001010.10.01
TA = 25°C
0
10 100 1 k 10 k 100 k
FREQUENCY
f – Frequency – Hz
Figure 12
TL1004x-2.5
Figure 13
FILTERED OUTPUT NOISE VOLTAGE
vs
CUTOFF FREQUENCY
120
IZ = 100 µA TA = 25°C
100
RC Low Pass
80
100 µA
R
60
40
Filtered Output Noise Voltage –µV
20
0
C
1001010.1
Cutoff Frequency – kHz
4
3
2
1
0
Input and Output Voltages – V
5
0
0
LT1004x-2.5
TRANSIENT RESPONSE
Output
24 k
V
I
t – Time – µs
V
O
Input
100 500
Figure 14
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
8
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Figure 15
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
100 pF
TTL Input
1% metal-film resistors
22 k
LT1004-1.2
10 k
24 V
12 k
56 k
–5 V
Figure 16. V
24 V
+
LM301A
–5 V
0.05 µF
2N3904
Generator for EPROMs (No Trim Required)
I(PP)
Output
16.9 k
1.05 k
600 µs RC
21 V
Network Detail
YSI 44201
2.7 k
5%
LT1004-1.2
15 V
RT Network YSI 44201
2765
0.1%
168.3
+
1/2 TLE2022
10 k
0.1%
10 k
0.1%
1/2 TLE2022
+
10 k
0.1%
Figure 17. 0°C-to-100°C Linear-Output Thermometer
0.1%
Green
Brown
6250
Red
302 k
0–10 V 0°C–100°C
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LT1004-1.2, LT1004-2.5 MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
100 µA
LT1004-1.2
VI 5 V
LT1004-1.2
22
+
V+
LM334
V–
1 M
1%
R
5.6 k
3
+
TLC271 VO = 5 V
2
VI = 6.5 V to 15 V
7
8
4
6
150 pF
Figure 18. Micropower 5-V Reference
Output
50 µF
9 V
3.01 M 1%
510 k
LT1004-1.2
1.235 V
Figure 19. Low-Noise Reference
100 k
R1
3 V,
Lithium
LT1004-1.2
187
+
Quiescent current 15 µA
Y ellow Springs Inst. Co., Part #44007
NOTE A: This application compensates within ±1°C from 0°C to 60°C.
1684
Figure 21. Micropower Cold-Junction Compensation for Thermocouples
Figure 20. Micropower Reference From 9-V Battery
5 k at 25°C
1800
+
THERMOCOUPLE
TYPE
J K T S
R1
232 kΩ 298 kΩ 301 kΩ
2.1 M
10
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LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
(see Note A)
R1
5 V
50 k
2.5 V
LT1004-2.5
Figure 22. 2.5-V Reference
15 V
TLE2027
+
2 k
LT1004-1.2
VI 8 V
10 µF
+
LT1084
IN OUT
ADJ
LT1004-2.5
+
10 µF
Figure 23. High-Stability 5-V Regulator
250 k250 k
Input
2N3904
301 1%
100 1%
V
CC+
Output
5 V
5 V
IO (see Note A)
May be increased for small output currents
NOTE A: R1
2 V
IO + 10 µA
, IO =
–5 V
1.235 V R1
Figure 24. Ground-Referenced Current Source
1.5 V (see Note A)
3 k
1.235 V
LT1004-1.2
NOTE A: Output regulates down to 1.285 V for IO = 0.
Figure 26. 1.2-V Reference From 1.5-V Battery
200 k
LT1004-1.2
60 k
Figure 25. Amplifier With Constant Gain
Over Temperature
V+
LM334
R
6.8 k
LT1004-1.2
IO
R 5 k
1.3 V
Figure 27. Terminal Current Source
With Low Temperature Coefficient
V
R
CC–
–5 V
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11
LT1004-1.2, LT1004-2.5 MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
R1
1%
133 k
1%
R1 sets trip point, 60.4 k per cell for 1.8 V per cell
Figure 28. Lead-Acid Low-Battery-Voltage Detector
V
I
+
10 µF
1 M
LT1004-1.2
+
TLC271
LT1084
V
I
ADJ
V
O
Battery Output
12 V
LO = Battery Low
120
+
V
10 µF
O
R1
LT1004-1.2
VCC – 1 V
0.015
V
R1
CC–
2 k
Figure 29. Variable-Voltage Supply
12
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IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.
CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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