Datasheet LT1004IDR-2-5, LT1004IDR-1-2, LT1004ID-2-5, LT1004CLP-2-5, LT1004CLP-1-2 Datasheet (Texas Instruments)

CHIP

0°C to 70°C

40°C to 85°C

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

D

Initial Accuracy
– ±4 mV for LT1004-1.2

D PACKAGE

(TOP VIEW)

– ±20 mV for LT1004-2.5

D

Micropower Operation

D

Operates up to 20 mA

D

Very Low Reference Impedance

D

Applications:
– Portable Meter Reference
– Portable Test Instruments
– Battery-Operated Systems
– Current-Loop Instrumentation

description

The LT1004 micropower voltage reference is a

NC

1

NC

2

NC

3

ANODE

NC – No internal connection
T erminals 6 and 8 are internally connected.

4

LP PACKAGE

(TOP VIEW)

CATHODE

8

NC

7

CATHODE

6
5

NC

ANODE
CATHODE

two-terminal band-gap reference diode designed
to provide high accuracy and excellent
temperature characteristics at very low operating
currents. Optimizing the key parameters in the
design, processing, and testing of the device
results in specifications previously attainable only
with selected units.

The LT1004 is a pin-for-pin replacement for the LM285 and LM385 series of references, with improved
specifications. It is an excellent device for use in systems in which accuracy was previously attained at the
expense of power consumption and trimming.

The L T1004C is characterized for operation from 0°C to 70°C. The L T1004I is characterized for operation from
–40°C to 85°C.

symbol

ANODE

(A)

AVAILABLE OPTIONS

PACKAGED DEVICES

V

T

A

°

°

–

For ordering purposes, the decimal point in the part number must be replaced with
a hyphen (e.g., show the -1.2 suffix as -1-2 and the -2.5 suffix as -2-5). The D
package is available taped and reeled. Add the R suffix to the device type (e.g.,
LT1004CDR-1-2). Chip forms are tested at 25°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Z

TYP

1.2 V LT1004CD-1.2 LT1004CLP-1.2 LT1004Y-1.2

2.5 V LT1004CD-2.5 LT1004CLP-2.5 LT1004Y-2.5

1.2 V LT1004ID-1.2 LT1004ILP-1.2 —

2.5 V LT1004ID-2.5 LT1004ILP-2.5 —

SMALL

OUTLINE

(D)

CATHODE
(K)

PLASTIC

(LP)

FORM

(Y)

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Copyright  1999, Texas Instruments Incorporated

1

LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

schematic

LT1004-1.2

CATHODE

Q1

Q2

20 pF

500 kΩ

7.5 kΩ

Q3

Q5

500 Ω

7.5 kΩ

Q4

Q6

20 pF

600 kΩ

60 kΩ

Q11

Q10

Q7

LT1004-2.5

Q12

200 kΩ

50 kΩ

Q9

300 kΩ

Q8

Q13

ANODE

CATHODE

Q12

Q3

Q2

Q1

NOTE A: All component values shown are nominal.

20 pF

500 kΩ

Q5

500 Ω

Q4

Q6

60 kΩ

20 pF

600 kΩ

Q7

Q11

Q10

200 kΩ

500 kΩ

50 kΩ

Q9

300 kΩ

Q8

Q13

500 kΩ

ANODE

2

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Operating free-air temperature, T

°C

PARAMETER

T

‡

UNIT

a

t

fficient

25°C

ppm/°C

I

IZ(min) to 1 mA

∆V

curre

mV

with current

I

mA

Reference impedance

I

100 µA

Ω

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Reverse current, IR 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward current, IF 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Package thermal impedance, θJA (see Notes 1 and 2): D package 97°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

LP package 156°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, T

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Maximum power dissipation is a function of TJ(max),

ambient temperature is PD = (TJ(max) – TA)/

2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace
length of zero.

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

θ

, and TA. The maximum allowable power dissipation at any allowable

θ

JA

JA

. Operating at the absolute maximum TJ of 150°C can impact reliability.

recommended operating conditions

MIN MAX UNIT

p

p

A

LT1004C 0 70
LT1004I –40 85

°

electrical characteristics at specified free-air temperature

TEST

CONDITIONS

V

Z

∆VZ/∆t

IZ(min)

z

z

V

n

‡

Full range is 0°C to 70°C for the LT1004C and –40°C to 85°C for the LT1004I.

§

The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature
range.

Reference voltage IZ = 100 µA

Average

p

V

emperature coe

Z

of reference voltage

Change in
reference voltage

Z

with

Long-term change
in reference voltage

Minimum
reference current

Broadband
noise voltage

nt

p

IZ = 10 µA

§

IZ = 20 µA

=

Z

= 1 mA to 20

Z

IZ = 100 µA 25°C 20 20 ppm/khr

=

Z

IZ = 100 µA,
f = 10 Hz to 10 kHz

A

25°C 1.231 1.235 1.239 2.48 2.5 2.52

LT1004C 1.225 1.245 2.47 2.53

Full
range

LT1004I 1.225 1.245 2.47 2.53

°

25°C 1 1

Full range 1.5 1.5

25°C 10 10

Full range 20 20

Full range 8 10 12 20 µA

25°C 0.2 0.6 0.2 0.6

Full range 1.5 1.5

25°C 60 120 µV

LT1004-1.2 LT1004-2.5

MIN TYP MAX MIN TYP MAX

V

20

pp

20

†

°

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3

LT1004-1.2, LT1004-2.5

PARAMETER

UNIT

a

g

ppm/°C

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

electrical characteristics, TA = 25°C

TEST

CONDITIONS

V

Z

V

∆VZ/∆t Long-term change in reference voltage IZ = 100 µA 20 20 ppm/khr
IZ(min) Minimum reference current 8 12 µA
z

z

V

n

†

The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature
range.

Reference voltage IZ = 100 µA 1.231 1.235 1.239 2.48 2.5 2.52 V
Average temperature coefficient

Z

of reference voltage

Reference impedance IZ = 100 µA 0.2 0.6 0.2 0.6 Ω
Broadband noise voltage

†

IZ = 10 µA 20
IZ = 20 µA 20

IZ = 100 µA,
f = 10 Hz to 10 kHz

TYPICAL CHARACTERISTICS

LT1004Y-1.2 LT1004Y-2.5

MIN TYP MAX MIN TYP MAX

pp

60 120 µV

°

Table of Graphs

GRAPH TITLE FIGURE

LT1004x-1.2

Reverse current vs Reverse voltage 1
Reference-voltage change vs Reverse current 2
Forward voltage vs Forward current 3
Reference voltage vs Free-air temperature 4
Reference impedance vs Reference current 5
Noise voltage vs Frequency 6
Filtered output noise voltage vs Cutoff frequency 7

LT1004x-2.5

Transient response 8
Reverse current vs Reverse voltage 9
Forward voltage vs Forward current 10
Reference voltage vs Free-air temperature 11
Reference impedance vs Reference current 12
Noise voltage vs Frequency 13
Filtered output noise voltage vs Cutoff frequency 14
Transient response 15

4

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ÎÎÎÎ

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

TYPICAL CHARACTERISTICS

LT1004x-1.2

REVERSE CURRENT

vs

100

TA = –55°C to 125°C

Aµ

10

– Reverse Current –

1

R

I

0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4

REVERSE VOLTAGE

VR – Reverse Voltage – V

†

REFERENCE-VOLTAGE CHANGE

16

TA = –55°C to 125°C

12

8

4

– Reference Voltage Change – mV

Z

0

∆V

– 4

LT1004x-1.2

vs

REVERSE CURRENT

IR – Reverse Current – mA

1010.10.01

100

Figure 1

LT1004x-1.2

FORWARD VOLTAGE

vs

FORWARD CURRENT

1.2
TA = 25°C

1

0.8

0.6

– Forward Voltage – V

0.4

F

V

0.2

0

0.01 0.1 1 10 100
IF – Forward Current – mA

1.245

1.24

1.235

1.23

– Reference Voltage – V

Z

V

1.225

Figure 2

LT1004x-1.2

REFERENCE VOLTAGE

vs

FREE-AIR TEMPERATURE

IZ = 100 µA

125105856545255–15–35–55

TA – Free-Air Temperature – °C

Figure 3

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Figure 4

5

LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

REFERENCE IMPEDANCE

REFERENCE CURRENT

100

Ω

10

1

– Reference Impedance –

z

z

0.1

IZ – Reference Current – mA

LT1004x-1.2

vs

f = 25 Hz
TA = –55°C to 125°C

TYPICAL CHARACTERISTICS

700

IZ = 100 µA

600

TA = 25°C

500

nV/ Hz

400

300

200

– Noise Voltage –

n

V

100

0

1001010.10.01

10 100 1 k 10 k 100 k

†

LT1004x-1.2

NOISE VOLTAGE

vs

FREQUENCY

f – Frequency – Hz

70

60

µV

50

40

30

20

Filtered Output Noise Voltage –

10

0

Figure 5

TL1004x-1.2

FILTERED OUTPUT NOISE VOLTAGE

vs

CUTOFF FREQUENCY

IZ = 100 µA
TA = 25°C

100 µA

R

C

Cutoff Frequency – kHz

RC Low Pass

Figure 6

LT1004x-2.5

TRANSIENT RESPONSE

2

1.5

1

0.5

0

Input and Output Voltages – V

5

0

1001010.1

Output

36 kΩ

V

I

Input

t – Time – µs

V

O

6005001000

Figure 7

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

6

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Figure 8

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

TYPICAL CHARACTERISTICS

LT1004x-2.5

REVERSE CURRENT

vs

REVERSE VOLTAGE

100

TA = –55°C to 125°C

Aµ

10

1

– Reverse Current –I

R

0.1

VR – Reverse Voltage – V

32.521.510.50

1.2

1

0.8

0.6

– Forward Voltage – VV

0.4

F

0.2

0

0.01

†

LT1004x-2.5

FORWARD VOLTAGE

vs

FORWARD CURRENT

TA = 25°C

1001010.1

IF – Forward Current – mA

Figure 9

– Reference Voltage – VV

Figure 10

LT1004x-2.5

REFERENCE VOLTAGE

vs

FREE-AIR TEMPERATURE

2.52
IZ = 100 µA

2.515

2.51

2.505

2.5

2.495

2.49

Z

2.485

2.48

2.475
–55

TA – Free-Air Temperature – °C

125105856545255–15–35

Figure 11

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

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7

LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

– Reference Impedance – Ω

z

1000

100

z

f = 25 Hz
TA = –55°C to 125°C

10

1

0.1

TYPICAL CHARACTERISTICS

LT1004x-2.5

REFERENCE IMPEDANCE

vs

REFERENCE CURRENT

IZ – Reference Current – mA

†

LT1004x-2.5

NOISE VOLTAGE

vs

1400

IZ = 100 µA

1200

1000

nV/ Hz

800

600

400

– Noise Voltage –

n

V

200

1001010.10.01

TA = 25°C

0

10 100 1 k 10 k 100 k

FREQUENCY

f – Frequency – Hz

Figure 12

TL1004x-2.5

Figure 13

FILTERED OUTPUT NOISE VOLTAGE

vs

CUTOFF FREQUENCY

120

IZ = 100 µA
TA = 25°C

100

RC Low Pass

80

100 µA

R

60

40

Filtered Output Noise Voltage –µV

20

0

C

1001010.1

Cutoff Frequency – kHz

4

3

2

1

0

Input and Output Voltages – V

5

0

0

LT1004x-2.5

TRANSIENT RESPONSE

Output

24 kΩ

V

I

t – Time – µs

V

O

Input

100 500

Figure 14

†

Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.

8

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Figure 15

LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

APPLICATION INFORMATION

100 pF

TTL Input

†

1% metal-film resistors

22 kΩ

LT1004-1.2

10 kΩ

24 V

12 kΩ

56 kΩ

–5 V

Figure 16. V

24 V

+

LM301A

–

–5 V

0.05 µF

2N3904

Generator for EPROMs (No Trim Required)

I(PP)

Output

16.9 kΩ

1.05 kΩ

600 µs RC

21 V

†

†

Network Detail

YSI 44201

2.7 kΩ

5%

LT1004-1.2

15 V

RT Network
YSI 44201

2765 Ω

0.1%

168.3 Ω

+

1/2
TLE2022

–

10 kΩ

0.1%

10 kΩ

0.1%

–

1/2
TLE2022

+

10 kΩ

0.1%

Figure 17. 0°C-to-100°C Linear-Output Thermometer

0.1%

Green

Brown

6250 Ω

Red

302 kΩ

0–10 V
0°C–100°C

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9

LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

APPLICATION INFORMATION

100 µA

LT1004-1.2

VI ≥ 5 V

LT1004-1.2

22 Ω

+

V+

LM334

V–

1 MΩ

1%

R

5.6 kΩ

3

+

TLC271 VO = 5 V

2

–

VI = 6.5 V to 15 V

7

8

4

6

150 pF

Figure 18. Micropower 5-V Reference

Output

50 µF

9 V

3.01 MΩ
1%

510 kΩ

LT1004-1.2

1.235 V

Figure 19. Low-Noise Reference

†

100 kΩ

R1

3 V,

Lithium

LT1004-1.2

187 Ω

+

–

†

Quiescent current ≅ 15 µA

‡

Y ellow Springs Inst. Co., Part #44007

NOTE A: This application compensates within ±1°C from 0°C to 60°C.

1684 Ω

Figure 21. Micropower Cold-Junction Compensation for Thermocouples

Figure 20. Micropower Reference From 9-V Battery

5 kΩ at 25°C

1800 Ω

‡

+

–

THERMOCOUPLE

TYPE

J
K
T
S

R1

232 kΩ
298 kΩ
301 kΩ

2.1 MΩ

10

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LT1004-1.2, LT1004-2.5

MICROPOWER INTEGRATED VOLTAGE REFERENCES

SLVS022H – JANUARY 1989 – REVISED JULY 1999

APPLICATION INFORMATION

(see Note A)

R1

5 V

50 kΩ

2.5 V

LT1004-2.5

Figure 22. 2.5-V Reference

15 V

–

TLE2027

+

†

2 kΩ

LT1004-1.2

VI ≥ 8 V

10 µF

+

LT1084

IN OUT

ADJ

LT1004-2.5

+

10 µF

Figure 23. High-Stability 5-V Regulator

250 kΩ250 kΩ

Input

2N3904

301 Ω
1%

100 Ω
1%

V

CC+

Output

5 V

≥ 5 V

IO (see Note A)

†

May be increased for small output currents

NOTE A: R1 ≈

2 V

IO + 10 µA

, IO =

–5 V

1.235 V
R1

Figure 24. Ground-Referenced Current Source

1.5 V (see Note A)

3 kΩ

1.235 V

LT1004-1.2

NOTE A: Output regulates down to 1.285 V for IO = 0.

Figure 26. 1.2-V Reference From 1.5-V Battery

200 kΩ

LT1004-1.2

60 kΩ

Figure 25. Amplifier With Constant Gain

Over Temperature

V+

LM334

R

6.8 kΩ

LT1004-1.2

IO ≈

R ≤ 5 kΩ

1.3 V

Figure 27. Terminal Current Source

With Low Temperature Coefficient

V

R

CC–

≤ –5 V

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LT1004-1.2, LT1004-2.5
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SLVS022H – JANUARY 1989 – REVISED JULY 1999

APPLICATION INFORMATION

†

R1

1%

133 kΩ

1%

†

R1 sets trip point, 60.4 kΩ per cell for 1.8 V per cell

Figure 28. Lead-Acid Low-Battery-Voltage Detector

V

I

+

10 µF

1 MΩ

LT1004-1.2

+

TLC271

–

LT1084

V

I

ADJ

V

O

Battery Output

12 V

LO = Battery Low

120 Ω

+

V

10 µF

O

R1 ≤

LT1004-1.2

VCC – 1 V

0.015

V

R1

CC–

2 kΩ

Figure 29. Variable-Voltage Supply

12

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pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.

CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
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Copyright  1999, Texas Instruments Incorporated