Applications:
– Portable Meter Reference
– Portable Test Instruments
– Battery-Operated Systems
– Current-Loop Instrumentation
description
The LT1004 micropower voltage reference is a
NC
1
NC
2
NC
3
ANODE
NC – No internal connection
T erminals 6 and 8 are internally connected.
4
LP PACKAGE
(TOP VIEW)
CATHODE
8
NC
7
CATHODE
6
5
NC
ANODE
CATHODE
two-terminal band-gap reference diode designed
to provide high accuracy and excellent
temperature characteristics at very low operating
currents. Optimizing the key parameters in the
design, processing, and testing of the device
results in specifications previously attainable only
with selected units.
The LT1004 is a pin-for-pin replacement for the LM285 and LM385 series of references, with improved
specifications. It is an excellent device for use in systems in which accuracy was previously attained at the
expense of power consumption and trimming.
The L T1004C is characterized for operation from 0°C to 70°C. The L T1004I is characterized for operation from
–40°C to 85°C.
symbol
ANODE
(A)
AVAILABLE OPTIONS
PACKAGED DEVICES
V
T
A
°
°
–
For ordering purposes, the decimal point in the part number must be replaced with
a hyphen (e.g., show the -1.2 suffix as -1-2 and the -2.5 suffix as -2-5). The D
package is available taped and reeled. Add the R suffix to the device type (e.g.,
LT1004CDR-1-2). Chip forms are tested at 25°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Z
TYP
1.2 VLT1004CD-1.2LT1004CLP-1.2 LT1004Y-1.2
2.5 VLT1004CD-2.5LT1004CLP-2.5 LT1004Y-2.5
1.2 VLT1004ID-1.2LT1004ILP-1.2—
2.5 VLT1004ID-2.5LT1004ILP-2.5—
SMALL
OUTLINE
(D)
CATHODE
(K)
PLASTIC
(LP)
FORM
(Y)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 1999, Texas Instruments Incorporated
1
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
schematic
LT1004-1.2
CATHODE
Q1
Q2
20 pF
500 kΩ
7.5 kΩ
Q3
Q5
500 Ω
7.5 kΩ
Q4
Q6
20 pF
600 kΩ
60 kΩ
Q11
Q10
Q7
LT1004-2.5
Q12
200 kΩ
50 kΩ
Q9
300 kΩ
Q8
Q13
ANODE
CATHODE
Q12
Q3
Q2
Q1
NOTE A: All component values shown are nominal.
20 pF
500 kΩ
Q5
500 Ω
Q4
Q6
60 kΩ
20 pF
600 kΩ
Q7
Q11
Q10
200 kΩ
500 kΩ
50 kΩ
Q9
300 kΩ
Q8
Q13
500 kΩ
ANODE
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Operating free-air temperature, T
°C
PARAMETER
T
‡
UNIT
a
t
fficient
25°C
ppm/°C
I
IZ(min) to 1 mA
∆V
curre
mV
with current
I
mA
Reference impedance
I
100 µA
Ω
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Maximum power dissipation is a function of TJ(max),
ambient temperature is PD = (TJ(max) – TA)/
2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace
length of zero.
, and TA. The maximum allowable power dissipation at any allowable
θ
JA
JA
. Operating at the absolute maximum TJ of 150°C can impact reliability.
recommended operating conditions
MINMAXUNIT
p
p
A
LT1004C070
LT1004I–4085
°
electrical characteristics at specified free-air temperature
TEST
CONDITIONS
V
Z
∆VZ/∆t
IZ(min)
z
z
V
n
‡
Full range is 0°C to 70°C for the LT1004C and –40°C to 85°C for the LT1004I.
§
The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature
range.
Reference voltageIZ = 100 µA
Average
p
V
emperature coe
Z
of reference voltage
Change in
reference voltage
Z
with
Long-term change
in reference voltage
Minimum
reference current
Broadband
noise voltage
nt
p
IZ = 10 µA
§
IZ = 20 µA
=
Z
= 1 mA to 20
Z
IZ = 100 µA25°C2020ppm/khr
=
Z
IZ = 100 µA,
f = 10 Hz to 10 kHz
A
25°C1.2311.2351.2392.482.52.52
LT1004C1.2251.2452.472.53
Full
range
LT1004I1.2251.2452.472.53
°
25°C11
Full range1.51.5
25°C1010
Full range2020
Full range8101220µA
25°C0.20.60.20.6
Full range1.51.5
25°C60120µV
LT1004-1.2LT1004-2.5
MINTYPMAXMINTYPMAX
V
20
pp
20
†
°
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
LT1004-1.2, LT1004-2.5
PARAMETER
UNIT
a
g
ppm/°C
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
electrical characteristics, TA = 25°C
TEST
CONDITIONS
V
Z
V
∆VZ/∆tLong-term change in reference voltageIZ = 100 µA2020ppm/khr
IZ(min)Minimum reference current812µA
z
z
V
n
†
The average temperature coefficient of reference voltage is defined as the total change in reference voltage divided by the specified temperature
range.
Reference voltageIZ = 100 µA1.2311.235 1.2392.482.52.52V
Average temperature coefficient
Z
of reference voltage
Reference impedanceIZ = 100 µA0.20.60.20.6Ω
Broadband noise voltage
†
IZ = 10 µA20
IZ = 20 µA20
IZ = 100 µA,
f = 10 Hz to 10 kHz
TYPICAL CHARACTERISTICS
LT1004Y-1.2LT1004Y-2.5
MINTYPMAXMINTYPMAX
pp
60120µV
°
Table of Graphs
GRAPH TITLEFIGURE
LT1004x-1.2
Reverse current vs Reverse voltage1
Reference-voltage change vs Reverse current2
Forward voltage vs Forward current3
Reference voltage vs Free-air temperature4
Reference impedance vs Reference current5
Noise voltage vs Frequency6
Filtered output noise voltage vs Cutoff frequency7
LT1004x-2.5
Transient response8
Reverse current vs Reverse voltage9
Forward voltage vs Forward current10
Reference voltage vs Free-air temperature11
Reference impedance vs Reference current12
Noise voltage vs Frequency13
Filtered output noise voltage vs Cutoff frequency14
Transient response15
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ÎÎÎÎ
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
TYPICAL CHARACTERISTICS
LT1004x-1.2
REVERSE CURRENT
vs
100
TA = –55°C to 125°C
Aµ
10
– Reverse Current –
1
R
I
0.1
00.20.40.60.811.21.4
REVERSE VOLTAGE
VR – Reverse Voltage – V
†
REFERENCE-VOLTAGE CHANGE
16
TA = –55°C to 125°C
12
8
4
– Reference Voltage Change – mV
Z
0
∆V
– 4
LT1004x-1.2
vs
REVERSE CURRENT
IR – Reverse Current – mA
1010.10.01
100
Figure 1
LT1004x-1.2
FORWARD VOLTAGE
vs
FORWARD CURRENT
1.2
TA = 25°C
1
0.8
0.6
– Forward Voltage – V
0.4
F
V
0.2
0
0.010.1110100
IF – Forward Current – mA
1.245
1.24
1.235
1.23
– Reference Voltage – V
Z
V
1.225
Figure 2
LT1004x-1.2
REFERENCE VOLTAGE
vs
FREE-AIR TEMPERATURE
IZ = 100 µA
125105856545255–15–35–55
TA – Free-Air Temperature – °C
Figure 3
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Figure 4
5
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
REFERENCE IMPEDANCE
REFERENCE CURRENT
100
Ω
10
1
– Reference Impedance –
z
z
0.1
IZ – Reference Current – mA
LT1004x-1.2
vs
f = 25 Hz
TA = –55°C to 125°C
TYPICAL CHARACTERISTICS
700
IZ = 100 µA
600
TA = 25°C
500
nV/ Hz
400
300
200
– Noise Voltage –
n
V
100
0
1001010.10.01
101001 k10 k100 k
†
LT1004x-1.2
NOISE VOLTAGE
vs
FREQUENCY
f – Frequency – Hz
70
60
µV
50
40
30
20
Filtered Output Noise Voltage –
10
0
Figure 5
TL1004x-1.2
FILTERED OUTPUT NOISE VOLTAGE
vs
CUTOFF FREQUENCY
IZ = 100 µA
TA = 25°C
100 µA
R
C
Cutoff Frequency – kHz
RC Low Pass
Figure 6
LT1004x-2.5
TRANSIENT RESPONSE
2
1.5
1
0.5
0
Input and Output Voltages – V
5
0
1001010.1
Output
36 kΩ
V
I
Input
t – Time – µs
V
O
6005001000
Figure 7
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Figure 8
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
TYPICAL CHARACTERISTICS
LT1004x-2.5
REVERSE CURRENT
vs
REVERSE VOLTAGE
100
TA = –55°C to 125°C
Aµ
10
1
– Reverse Current –I
R
0.1
VR – Reverse Voltage – V
32.521.510.50
1.2
1
0.8
0.6
– Forward Voltage – VV
0.4
F
0.2
0
0.01
†
LT1004x-2.5
FORWARD VOLTAGE
vs
FORWARD CURRENT
TA = 25°C
1001010.1
IF – Forward Current – mA
Figure 9
– Reference Voltage – VV
Figure 10
LT1004x-2.5
REFERENCE VOLTAGE
vs
FREE-AIR TEMPERATURE
2.52
IZ = 100 µA
2.515
2.51
2.505
2.5
2.495
2.49
Z
2.485
2.48
2.475
–55
TA – Free-Air Temperature – °C
125105856545255–15–35
Figure 11
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
7
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
– Reference Impedance – Ω
z
1000
100
z
f = 25 Hz
TA = –55°C to 125°C
10
1
0.1
TYPICAL CHARACTERISTICS
LT1004x-2.5
REFERENCE IMPEDANCE
vs
REFERENCE CURRENT
IZ – Reference Current – mA
†
LT1004x-2.5
NOISE VOLTAGE
vs
1400
IZ = 100 µA
1200
1000
nV/ Hz
800
600
400
– Noise Voltage –
n
V
200
1001010.10.01
TA = 25°C
0
101001 k10 k100 k
FREQUENCY
f – Frequency – Hz
Figure 12
TL1004x-2.5
Figure 13
FILTERED OUTPUT NOISE VOLTAGE
vs
CUTOFF FREQUENCY
120
IZ = 100 µA
TA = 25°C
100
RC Low Pass
80
100 µA
R
60
40
Filtered Output Noise Voltage –µV
20
0
C
1001010.1
Cutoff Frequency – kHz
4
3
2
1
0
Input and Output Voltages – V
5
0
0
LT1004x-2.5
TRANSIENT RESPONSE
Output
24 kΩ
V
I
t – Time – µs
V
O
Input
100500
Figure 14
†
Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Figure 15
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
100 pF
TTL Input
†
1% metal-film resistors
22 kΩ
LT1004-1.2
10 kΩ
24 V
12 kΩ
56 kΩ
–5 V
Figure 16. V
24 V
+
LM301A
–
–5 V
0.05 µF
2N3904
Generator for EPROMs (No Trim Required)
I(PP)
Output
16.9 kΩ
1.05 kΩ
600 µs RC
21 V
†
†
Network Detail
YSI 44201
2.7 kΩ
5%
LT1004-1.2
15 V
RT Network
YSI 44201
2765 Ω
0.1%
168.3 Ω
+
1/2
TLE2022
–
10 kΩ
0.1%
10 kΩ
0.1%
–
1/2
TLE2022
+
10 kΩ
0.1%
Figure 17. 0°C-to-100°C Linear-Output Thermometer
0.1%
Green
Brown
6250 Ω
Red
302 kΩ
0–10 V
0°C–100°C
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
9
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
100 µA
LT1004-1.2
VI ≥ 5 V
LT1004-1.2
22 Ω
+
V+
LM334
V–
1 MΩ
1%
R
5.6 kΩ
3
+
TLC271VO = 5 V
2
–
VI = 6.5 V to 15 V
7
8
4
6
150 pF
Figure 18. Micropower 5-V Reference
Output
50 µF
9 V
3.01 MΩ
1%
510 kΩ
LT1004-1.2
1.235 V
Figure 19. Low-Noise Reference
†
100 kΩ
R1
3 V,
Lithium
LT1004-1.2
187 Ω
+
–
†
Quiescent current ≅ 15 µA
‡
Y ellow Springs Inst. Co., Part #44007
NOTE A: This application compensates within ±1°C from 0°C to 60°C.
1684 Ω
Figure 21. Micropower Cold-Junction Compensation for Thermocouples
Figure 20. Micropower Reference From 9-V Battery
5 kΩ at 25°C
1800 Ω
‡
+
–
THERMOCOUPLE
TYPE
J
K
T
S
R1
232 kΩ
298 kΩ
301 kΩ
2.1 MΩ
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
(see Note A)
R1
5 V
50 kΩ
2.5 V
LT1004-2.5
Figure 22. 2.5-V Reference
15 V
–
TLE2027
+
†
2 kΩ
LT1004-1.2
VI ≥ 8 V
10 µF
+
LT1084
INOUT
ADJ
LT1004-2.5
+
10 µF
Figure 23. High-Stability 5-V Regulator
250 kΩ250 kΩ
Input
2N3904
301 Ω
1%
100 Ω
1%
V
CC+
Output
5 V
≥ 5 V
IO (see Note A)
†
May be increased for small output currents
NOTE A: R1 ≈
2 V
IO + 10 µA
, IO =
–5 V
1.235 V
R1
Figure 24. Ground-Referenced Current Source
1.5 V (see Note A)
3 kΩ
1.235 V
LT1004-1.2
NOTE A: Output regulates down to 1.285 V for IO = 0.
Figure 26. 1.2-V Reference From 1.5-V Battery
200 kΩ
LT1004-1.2
60 kΩ
Figure 25. Amplifier With Constant Gain
Over Temperature
V+
LM334
R
6.8 kΩ
LT1004-1.2
IO ≈
R ≤ 5 kΩ
1.3 V
Figure 27. Terminal Current Source
With Low Temperature Coefficient
V
R
CC–
≤ –5 V
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
11
LT1004-1.2, LT1004-2.5
MICROPOWER INTEGRATED VOLTAGE REFERENCES
SLVS022H – JANUARY 1989 – REVISED JULY 1999
APPLICATION INFORMATION
†
R1
1%
133 kΩ
1%
†
R1 sets trip point, 60.4 kΩ per cell for 1.8 V per cell
Figure 28. Lead-Acid Low-Battery-Voltage Detector
V
I
+
10 µF
1 MΩ
LT1004-1.2
+
TLC271
–
LT1084
V
I
ADJ
V
O
Battery Output
12 V
LO = Battery Low
120 Ω
+
V
10 µF
O
R1 ≤
LT1004-1.2
VCC – 1 V
0.015
V
R1
CC–
2 kΩ
Figure 29. Variable-Voltage Supply
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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