Texas Instruments LM5156-Q1, LM51561-Q1 Datasheet

BIAS
VCC
GATE
CS
GND
FB
COMP
RT
PGOOD
DITHOFF
UVLO/SYNC
V
LOAD
V
SUPPLY
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LM5156-Q1,LM51561-Q1
SNVSBI7A –JANUARY 2020–REVISED JUNE 2020
LM5156x-Q1 2.2-MHz Wide VIN 65-V Non-synchronous Boost/SEPIC/Flyback Controller
with Dual Random Spread Spectrum

1 Features

1
AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C T
Functional Safety-Capable – Documentation available to aid functional
safety system design
Suited for wide input operating range car battery applications
– 3.5-V to 60-V Operating range (65-V abs max) – 2.97-V to 16-V When BIAS = VCC – Minimum boost supply voltage 1.5 V when
BIAS 3.5 V – Input transient protection up to 65 V – Minimized battery drain
– Low shutdown current (IQ≤ 2.6 µA)
– Low operating current (IQ≤ 490 µA)
Small solution size and low cost – Maximum switching frequency of 2.2 MHz – 12-Pin WSON package (3 mm × 2 mm) with
wettable flanks
– Integrated error amplifier allows primary-side
regulation without optocoupler (flyback)
– Minimized undershoot during cranking (start-
stop application)
EMI mitigation – Selectable dual random spread spectrum – Lead-less package
Higher efficiency with low-power dissipation – 100-mV ±7% accurate current limit threshold – Strong 1.5-A peak standard MOSFET driver – Supports external VCC supply
A
Accurate ±1% accuracy feedback reference
Programmable extra slope compensation
Adjustable soft start
PGOOD indicator
Create a custom design using the LM5156x-Q1 with the WEBENCH®power designer

2 Applications

Automotive 12-V or 24-V battery application
Automotive start-stop application
High voltage LiDAR power supply
Multiple-output flyback without optocoupler
Automotive rear-lights LED bias supply
Wide input boost, SEPIC, flyback power module
Audio amplifier application
Battery-powered boost, SEPIC, flyback

3 Description

The LM5156x-Q1 (LM5156-Q1 and LM51561-Q1) device is a wide input range, non-synchronous boost controller that uses peak current mode control. The device can be used in boost, SEPIC, and flyback topologies.
The LM5156x-Q1 device can start up from a 1-cell battery with a minimum of 2.97 V if the BIAS pin is connected to the VCC pin. It can operate with the input supply voltage as low as 1.5 V if the BIAS pin is greater than 3.5 V.
Device Information
PART NUMBER PACKAGE BODY SIZE (NOM)
LM5156x-Q1 WSON (12) 3.00 mm × 2.00 mm (1) For all available packages, see the orderable addendum at
the end of the data sheet.
(1)
Avoid AM band interference and crosstalk – Optional clock synchronization
Typical Boost Application
– Dynamically programmable switching
frequency from 100 kHz to 2.2 MHz
Integrated protection features – Constant peak current limiting over input
voltage
– Optional hiccup mode overload protection (see
the Device Comparison Table) – Programmable line UVLO – OVP protection
1
– Thermal shutdown
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM5156-Q1,LM51561-Q1
SNVSBI7A –JANUARY 2020–REVISED JUNE 2020
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Table of Contents

1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Description (continued)......................................... 3
6 Device Comparison Table..................................... 3
7 Pin Configuration and Functions......................... 4
8 Specifications......................................................... 5
8.1 Absolute Maximum Ratings ...................................... 5
8.2 ESD Ratings.............................................................. 5
8.3 Recommended Operating Conditions....................... 6
8.4 Thermal Information.................................................. 6
8.5 Electrical Characteristics........................................... 6
8.6 Typical Characteristics.............................................. 8
9 Detailed Description............................................ 11
9.1 Overview ................................................................. 11
9.2 Functional Block Diagram....................................... 11
9.3 Feature Description................................................. 12
9.4 Device Functional Modes........................................ 25
10 Application and Implementation........................ 26
10.1 Application Information.......................................... 26
10.2 Typical Application ................................................ 26
10.3 System Examples ................................................. 30
11 Power Supply Recommendations ..................... 36
12 Layout................................................................... 36
12.1 Layout Guidelines ................................................. 36
12.2 Layout Examples................................................... 37
13 Device and Documentation Support................. 39
13.1 Device Support...................................................... 39
13.2 Documentation Support ........................................ 39
13.3 Related Links ........................................................ 39
13.4 Receiving Notification of Documentation Updates 39
13.5 Support Resources ............................................... 40
13.6 Trademarks........................................................... 40
13.7 Electrostatic Discharge Caution............................ 40
13.8 Glossary................................................................ 40
14 Mechanical, Packaging, and Orderable
Information........................................................... 40

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (January 2020) to Revision A Page
Changed device status from Advance Information to Production Data ................................................................................. 1
2
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5 Description (continued)

The internal VCC regulator also supports BIAS pin operation up to 60 V (65-V absolute maximum) for automotive load dump. The switching frequency is dynamically programmable with an external resistor from 100 kHz to 2.2 MHz. Switching at 2.2 MHz minimizes AM band interference and allows for a small solution size and fast transient response. To reduce the EMI of the power supply, the device provides a selectable dual random spread spectrum which reduces the EMI over the wide frequency range.
The device features a 1.5-A standard MOSFET driver and a low 100-mV current limit threshold. The device also supports the use of an external VCC supply to improve efficiency. Low operating current and pulse-skipping operation improve efficiency at light loads.
The device has built-in protection features such as cycle-by-cycle current limit, overvoltage protection, line UVLO, and thermal shutdown. Hiccup mode overload protection is available in the LM51561-Q1 device option. Additional features include low shutdown IQ, programmable soft start, programmable slope compensation, precision reference, power-good indicator, and external clock synchronization.

6 Device Comparison Table

DEVICE OPTION HICCUP MODE PROTECTION INTERNAL REFERENCE
LM5156-Q1 Disabled 1 V
LM51561-Q1 Enabled 1 V
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BIAS
GATE
VCC
GND
CS
COMP
PGOOD
UVLO/SYNC
SS
RT
FB
DITHOFF
1
2
3
4
5
6
7
8
9
10
11
12
EP
LM5156-Q1,LM51561-Q1
SNVSBI7A –JANUARY 2020–REVISED JUNE 2020

7 Pin Configuration and Functions

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12-Pin WSON With Wettable Flanks
DSS Package
Transparent Top View
Pin Functions
PIN
NO. NAME
1 BIAS P Supply voltage input to the VCC regulator. Connect a bypass capacitor from this pin to GND. 2 VCC P
3 GATE O
4 GND G
5 CS I
6 COMP O
7 DITHOFF I
8 FB I
9 SS I
10 RT I
11 PGOOD O
12
UVLO/SYNC/
EN
EP
(1) G = Ground, I = Input, O = Output, P = Power
TYPE
(1)
DESCRIPTION
Output of the internal VCC regulator and supply voltage input of the MOSFET driver. Connect a ceramic bypass capacitor from this pin to GND.
N-channel MOSFET gate drive output. Connect directly to the gate of the N-channel MOSFET through a short, low inductance path.
Ground pin. Connect directly to the ground connection of the sense resistor through a low inductance wide and short path.
Current sense input pin. Connect to the positive side of the current sense resistor through a short path.
Output of the internal transconductance error amplifier. Connect the loop compensation components between this pin and GND.
Spread spectrum selection pin. Internal spread spectrum (Clock dithering) is disabled when the pin is connected to the VCC pin. Connecting the pin to GND enables the internal spread spectrum.
Inverting input of the error amplifier. Connect a voltage divider from the output to this pin to set output voltage in boost/SEPIC topologies. Connect the low-side feedback resistor to GND.
Soft-start time programming pin. An external capacitor and an internal current source set the ramp rate of the internal error amplifier reference during soft start. Connect the ground connection of the capacitor to GND.
Switching frequency setting pin. The switching frequency is programmed by a single resistor between RT and GND.
Power-good indicator. An open-drain output which goes low if FB is below the under voltage threshold. Connect a pullup resistor to the system voltage rail.
Undervoltage lockout programming pin. The converter start-up and shutdown levels can be programmed by connecting this pin to the supply voltage through a resistor divider. The internal clock
I
can be synchronized to an external clock by applying a negative pulse signal into the UVLO/SYNC/EN pin. This pin must not be left floating. Connect to BIAS pin if not used. Connect the low-side UVLO resistor to GND.
Exposed pad of the package. The exposed pad must be connected to GND and the large ground copper plane to decrease thermal resistance.
4
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8 Specifications

8.1 Absolute Maximum Ratings

Over the recommended operating junction temperature range
BIAS to GND –0.3 65 UVLO to GND –0.3 V SS to GND
Input
RT to GND FB to GND –0.3 4.0 CS to GND(DC) –0.3 0.3 CS to GND(50ns transient) –1 DITHOFF to GND -0.3 18 VCC to GND –0.3 18
Output
GATE to GND (50ns transient) –1 PGOOD to GND
COMP to GND Junction temperature, T Storage temperature, T
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) This pin is not specified to have an external voltage applied. (3) 18 V or V (4) The maximum current sink is limited to 1 mA when V
+ 0.3 V whichever is lower
BIAS
(5) This pin has an internal max voltage clamp which can handle up to 1.6 mA. (6) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
(2) (2)
(4)
(5)
(6)
J
stg
PGOOD>VBIAS
(1)
MIN MAX UNIT
+0.3
BIAS
–0.3 3.8 –0.3 3.8
(3)
–0.3 18
V
V
–0.3
–40 150 –55 150
°C
.

8.2 ESD Ratings

(1)
All pins ±500 Corner pins ±750
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002 HBM ESD Classification Level 2
Charged-device model (CDM), per AEC Q100-011 CDM ESD Classification Level C4B
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
VALUE UNIT
±2000
V
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8.3 Recommended Operating Conditions

Over the recommended operating junction temperature range
V
BIAS
V
VCC
V
DITHOFF
V
UVLO
V
FB
f
SW
f
SYNC
T
J
Bias input VCC voltage DITHOFF input 0 16 V UVLO input 0 60 V FB input 0 4.0 V Typical switching frequency 100 2200 kHz Synchronization pulse frequency 100 2200 kHz Operating junction temperature
(1) Operating Ratings are conditions under the device is intended to be functional. For specifications and test conditions, see Electrical
Characteristics.
(2) BIAS pin operating range is from 2.97 V to 16 V when VCC is directly connected to BIAS. BIAS pin operating range is from 3.5 V to 60
V when VCC is supplied from the internal VCC regulator. (3) This pin voltage should be less than V (4) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.
(2)
(3)
(4)
+ 0.3 V.
BIAS
(1)
MIN NOM MAX UNIT
2.97 60 V
2.97 16 V
–40 150 °C

8.4 Thermal Information

LM5156x-Q1
THERMAL METRIC
R
θJA
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JT
ψ
JB
ψ
JB
R
θJC(bot)
Junction-to-ambient thermal resistance (LM5156EVM-BST) 33.2 °C/W Junction-to-ambient thermal resistance 58.2 °C/W Junction-to-case (top) thermal resistance 60.5 °C/W Junction-to-board thermal resistance 27.2 °C/W Junction-to-top characterization parameter (LM5156EVM-BST) 0.9 °C/W Junction-to-top characterization parameter 1.8 °C/W Junction-to-board characterization parameter (LM5156EVM-BST) 14.5 °C/W Junction-to-board characterization parameter 27.2 °C/W Junction-to-case (bottom) thermal resistance 4.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(1)
UNITDSS(WSON)
12 PINS

8.5 Electrical Characteristics

Typical values correspond to TJ= 25°C. Minimum and maximum limits apply over TJ= -40°C to 125°C. Unless otherwise stated, V
SUPPLY CURRENT
I
SHUTDOWN(BIAS)
I
OPERATING(BIAS)
VCC REGULATOR
V
VCC-REG
V
VCC-UVLO(RISING)
I
VCC-CL
ENABLE
V
EN(RISING)
V
EN(FALLING)
V
EN(HYS)
6
= 12V, RT= 9.09kΩ
BIAS
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BIAS shutdown current V BIAS operating current
VCC regulation V VCC regulation V
= 12 V, V
BIAS
V
= 12 V, V
BIAS
V
, RT= 220 kΩ
REF
= 8 V, No load 6.5 6.85 7 V
BIAS
= 8 V, I
BIAS
= 0 V 2.6 5 uA
UVLO
= 2.0 V, VFB=
UVLO
= 35 mA 6.5 V
VCC
490 550 uA
VCC UVLO threshold VCC rising 2.75 2.85 2.95 V VCC UVLO hysteresis VCC falling 0.063 V VCC sourcing current limit V
BIAS
= 10 V, V
= 0 V 35 110 mA
VCC
Enable threshold EN rising 0.4 0.52 0.7 V Enable threshold EN falling 0.33 0.49 0.63 V Enable hysteresis EN falling 0.03 V
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Electrical Characteristics (continued)
Typical values correspond to TJ= 25°C. Minimum and maximum limits apply over TJ= -40°C to 125°C. Unless otherwise stated, V
UVLO/SYNC
V
UVLO(RISING)
V
UVLO(FALLING)
V
UVLO(HYS)
I
UVLO
SPREAD SPECTRUM
V
DITHOFF(RISING)
V
DITHOFF(FALLING)
V
DITHOFF(HYS)
SS
I
SS
PULSE WIDTH MODULATION
fsw1 Switching frequency RT= 220 kΩ, V fsw2 Switching frequency RT= 9.09 kΩ, V t
ON(MIN)
D
MAX1
D
MAX2
CURRENT SENSE
I
SLOPE
V
CLTH
HICCUP MODE PROTECTION (LM51561)
ERROR AMPLIFIER
V
REF
Gm Transconductance 2 mA/V
OVP
V
OVTH
PGOOD
V
UVTH
MOSFET DRIVER
THERMAL SHUTDOWN
T
TSD
= 12V, RT= 9.09kΩ
BIAS
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
UVLO / SYNC threshold UVLO rising 1.425 1.5 1.575 V UVLO / SYNC threshold UVLO falling 1.370 1.45 1.520 V UVLO / SYNC threshold
hysteresis UVLO hysteresis current V
Clock dithering threshold DITHOFF rising, V Clock dithering threshold DITHOFF falling, V Clock dithering threshold
hysteresis
Soft-start current 9 10 11 uA SS pull-down switch R
Minimum on-time RT= 9.09 kΩ 50 ns Maximum duty cycle limit RT= 9.09 kΩ, V Maximum duty cycle limit RT= 220 kΩ, V
Peak slope compensation current RT= 220 kΩ 22.5 30 37.5 uA Current Limit threshold (CS-
GND)
Hiccup enable cycles 64 Cycles Hiccup timer reset cycles 8 Cycles
FB reference LM5156, LM51561 0.99 1 1.01 V
COMP sourcing current V COMP clamp voltage COMP rising (V COMP clamp voltage COMP falling 1 1.1 V
Over-voltage threshold FB rising (referece to V Over-voltage threshold FB falling (referece to V
PGOOD pull-down switch R Under-voltage threshold FB falling (referece to V Under-voltage threshold FB rising (referece to V
High-state voltage drop 100 mA sinking 0.25 V Low-state voltage drop 100 mA sourcing 0.15 V
Thermal shutdown threshold Temperature rising 175 °C Thermal shutdown hysteresis 15 °C
DSON
UVLO falling 0.05 V
= 1.6 V 4 5 6 uA
UVLO
= 4 V 1.1 1.7 2.1 V
BIAS
= 4 V 0.6 1.2 1.8 V
BIAS
DITHOFF falling, V
= 4 V 0.5 V
BIAS
55 Ω
= 4 V 85 100 115 kHz
BIAS
= 4 V 1980 2200 2420 kHz
BIAS
= 4 V 80 85 90 %
BIAS
= 4 V 90 93 96 %
BIAS
93 100 107 mV
= 1.2V 180 uA
COMP
= 2.0 V) 2.5 2.8 V
UVLO
) 107 110 113 %
REF
) 105 %
REF
1 mA sinking 90 Ω
DSON
) 87 90 93 %
REF
) 95 %
REF
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Duty Cycle (%)
Peak Inductor Current in Current Limit (A)
0 10 20 30 40 50 60 70 80 90 100
10
11
12
13
14
15
16
17
18
19
20
FSW=440kHz, RS=6m:, LM=1.2PH, V
LOAD
=10V
D005
RSL=0: RSL=1k:
Temperature (qC)
Current Limit Threshold (mV)
-40 -20 0 20 40 60 80 100 120 140 160
95
96
97
98
99
100
101
102
103
104
105
D006
I
VCC
(mA)
V
VCC
(V)
0 20 40 60 80 100 120
0
1
2
3
4
5
6
7
D003
V
BIAS
(V)
Voltage (V)
0 2 4 6 8 10 12
0
2
4
6
8
10
12
D004
BIAS VCC
RT Resistor (k:)
Frequency (kHz)
910 20 30 40 50 60 70 100 200 250
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
D001D001
Temperature (qC)
Frequency, RT=220k: (kHz)
Frequency, RT=9.09k: (kHz)
-40 -20 0 20 40 60 80 100 120 140 160
90 2000
92 2040
94 2080
96 2120
98 2160
100 2200
102 2240
104 2280
106 2320
108 2360
110 2400
RT=9.09kOhm
RT=220kOhm
D002
RT=220k: RT=9.09k:
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SNVSBI7A –JANUARY 2020–REVISED JUNE 2020

8.6 Typical Characteristics

Figure 1. Frequency vs RT Resistance Figure 2. Frequency vs Temperature
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Figure 3. V
VCC
vs I
Figure 5. Peak Current Limit vs Duty Cycle Figure 6. Current Limit Threshold vs Temperature
8
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VCC
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Figure 4. V
VCC
vs V
BIAS
(No Load)
Temperature (qC)
BIAS Shutdown Current (PA)
-40 -20 0 20 40 60 80 100 120 140 160
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
4
4.2
4.4
4.6
D011
BIAS=12V BIAS=45V
Frequency (kHz)
Minimum On-Time (ns)
0 250 500 750 1000 1250 1500 1750 2000 2250 2500
40
60
80
100
120
140
160
180
200
D012
V
BIAS
(V)
BIAS Operating Current (PA)
5 10 15 20 25 30 35 40 45 50 55 60
470
480
490
500
510
520
530
D009
VFB=V
REF
, RT=221k:, V
VCC
=7V, COMP=1.75V
VBIAS (V)
BIAS Shutdown Current (PA)
0 5 10 15 20 25 30 35 40 45 50 55 60
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
D010
Temperature (qC)
FB Reference (V)
-40 -20 0 20 40 60 80 100 120 140 160
0.99
0.992
0.994
0.996
0.998
1
1.002
1.004
1.006
1.008
1.01
D007D007D007
Temperature (qC)
EN Threshold (V)
-40 -20 0 20 40 60 80 100 120 140 160
0.43
0.44
0.45
0.46
0.47
0.48
0.49
0.5
0.51
0.52
0.53
0.54
0.55
0.56
D008
EN Falling EN Rising
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Typical Characteristics (continued)
Figure 7. FB Reference vs Temperature Figure 8. EN Threshold vs Temperature
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Figure 9. I
OPERATING(BIAS)
Figure 11. I
Including RT Current vs V
SHUTDOWN
BIAS
Figure 10. I
vs Temperature Figure 12. t
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SHUTDOWN(BIAS)
vs Frequency
ON(MIN)
vs V
BIAS
9
Temperature (qC)
UVLO Threshold (V)
-40 -20 0 20 40 60 80 100 120 140 160
1.4
1.42
1.44
1.46
1.48
1.5
1.52
1.54
1.56
D015
UVLO rising UVLO falling
Frequency (kHz)
Maximum Duty Cycle Limit (%)
0 250 500 750 1000 1250 1500 1750 2000 2250
85
86
87
88
89
90
91
92
93
94
95
D016
Temperature (qC)
Soft-Start Current (PA)
-40 -20 0 20 40 60 80 100 120 140 160
9
9.2
9.4
9.6
9.8
10
10.2
10.4
10.6
10.8
11
D013
V
VCC
(V)
Peak Driver Current (A)
2 4 6 8 10 12 14 16
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
D014
Isource (A) Isink (A)
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SNVSBI7A –JANUARY 2020–REVISED JUNE 2020
Typical Characteristics (continued)
Figure 13. ISSvs Temperature Figure 14. Peak Driver Current vs VCC
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Figure 15. UVLO Threshold vs Temperature Figure 16. Maximum Duty Cycle vs Frequency
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BIAS
VCC
FB
PGOOD
V
LOAD
V
SUPPLY
+
±
+
±
V
OVTH
V
UVTH
VCC
Regulator
BIAS
VCC_EN
VCC
UVLO
VCC_OK
FB
C
IN
C
OUT
L
M
R
LOAD
Q1
D1
R
S
I
SLOPE
GATE
CS
V
CS1
V
CS2
S Q
Q
R
Clock
Generator
GND
Clock_Sync
+
±
+
±
V
CS1
V
CSTH
V
CS2
PWM Comparator
C/L Comparator
+
±
R
COMP
C
COMP
R
T
COMP
FB
SS
+
V
REF
I
SS
Optional
Hiccup Mode
I
UVLO
UVLO/ SYNC
+
±
+
±
V
EN
VCC_EN
SYNC
Detector
Clock_Sync
TSD
VCC_OK
RUN
V
SUPPLY
V
UVLO
C
SS
R
UVLOT
R
UVLOB
R
FBT
R
FBB
C
VCC
OVP
G
COMP
RT
OVP
TSD
DITHOFF
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9 Detailed Description

9.1 Overview

The LM5156x-Q1 device is a wide input range, non-synchronous boost controller that uses peak-current-mode control. The device can be used in boost, SEPIC, and flyback topologies.
The device can start up from a 1-cell battery with a minimum of 2.97 V if the BIAS pin is connected to the VCC pin. It can operate with the input supply voltage as low as 1.5 V if the BIAS pin is greater than 3.5 V. The internal VCC regulator also supports BIAS pin operation up to 60 V (65-V absolute maximum) for automotive load dump. The switching frequency is dynamically programmable with an external resistor from 100 kHz to 2.2 MHz. Switching at 2.2 MHz minimizes AM band interference and allows for a small solution size and fast transient response. To reduce the EMI of the power supply, the device provides an optional dual random spread spectrum, which reduces the EMI over the wide frequency span.
The device features a 1.5-A standard MOSFET driver and a low 100-mV current limit threshold. The device also supports the use of an external VCC supply to improve efficiency. Low operating current and pulse skipping operation improve efficiency at light loads.
The device has built-in protection features such as cycle-by-cycle current limit, overvoltage protection, line UVLO, and thermal shutdown. Hiccup mode overload protection is available in the LM51561-Q1 device option. Additional features include low shutdown IQ, programmable soft start, programmable slope compensation, precision reference, power good indicator, and external clock synchronization.

9.2 Functional Block Diagram

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I
UVLO
UVLO/
SYNC
+
±
+
±
V
EN
VCC_EN
V
SUPPLY
V
UVLO
R
UVLOT
R
UVLOB
RUN
LM5156-Q1,LM51561-Q1
SNVSBI7A –JANUARY 2020–REVISED JUNE 2020
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9.3 Feature Description

9.3.1 Line Undervoltage Lockout (UVLO/SYNC/EN pin)

The device has a dual-level UVLO circuit. During power-on, if the BIAS pin voltage is greater than 2.7 V, and the UVLO pin voltage is in between the enable threshold (VEN) and the UVLO threshold (V (see the Clock Synchronization (UVLO/SYNC/EN Pin) section for more details), the device starts up and an internal configuration starts. The device typically requires a 65-µs internal start-up delay before entering standby mode. In standby mode, the VCC regulator and RT regulator are operational, SS pin is grounded, and there is no switching at the GATE output.
Figure 17. Line UVLO and Enable
) for more than 1.5 µs
UVLO
When the UVLO pin voltage is above the UVLO threshold, the device enters run mode. In the run mode, a soft­start sequence starts if the VCC voltage is greater than 4.5 V, or 50 µs after the VCC voltage exceeds the 2.85-V VCC UV threshold (V
VCC-UVLO
), whichever comes first. UVLO hysteresis is accomplished with an internal 50-mV voltage hysteresis and an additional 5-μA current source that is switched on or off. When the UVLO pin voltage exceeds the UVLO threshold, the current source is enabled to quickly raise the voltage at the UVLO pin. When the UVLO pin voltage falls below the UVLO threshold, the current source is disabled, causing the voltage at the UVLO pin to fall quickly. When the UVLO pin voltage is less than the enable threshold (VEN), the device enters shutdown mode after a 35-µs (typical) delay with all functions disabled.
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BIAS
= V
SUPPLY
UVLO
VCC
SS
GATE
2.7 V
0.52 V
2.85 V
50-µs
VCC UV delay
1.5 V
1 V
SS 1 V=V
LOAD(TARGET)
V
LOAD
Shutdown
Standby
t
SS
4.5 V
UVLO should be greater than
0.55 V more than 1.5µs to start-up
1.5 µs
65-µs (typical)
internal start-up delay
SS is grounded
with 2 cycles
delay
> 35 µs
V
LOAD
65-µs (typical)
internal start-up delay
UVLO
VCC
SS
V
LOAD
GATE
2.7 V
0.55 V
2.85 V
50-µs
VCC UV delay
1.5 V
1 V
SS 1 V
=
V
LOAD(TARGET)
V
LOAD
Shutdown
Standby
T
SS
4.5 V
UVLO should be greater than
0.55 V more than 1.5 µs to start-up
1.5 µs
> 3 cycles
SS is grounded
with 2 cycles
delay
65-µs (typical)
internal start-up delay
BIAS
= V
SUPPLY
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Feature Description (continued)
LM5156-Q1,LM51561-Q1
SNVSBI7A –JANUARY 2020–REVISED JUNE 2020
Figure 18. Boost Start-Up Waveforms
Case 1: Start-Up by 2.85-V VCC UVLO, UVLO Toggle After Start-Up
Figure 19. Boost Start-Up Waveforms
Case2: Start-Up When VCC > 4.5 V, EN Toggle After Start-Up
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V
SUPPLY
R
UVLOT
R
UVLOB
R
UVLOS
C
UVLO
I
UVLO
UVLO/SYNC
+
±
V
UVLO
RUN
UVLO(RISING) UVLOT
UVLOB
SUPPLY(ON) UVLO(RISING)
V R
R
V V
u
UVLO(FALLING)
SUPPLY(ON) SUPPLY(OFF)
UVLO(RISING)
UVLOT
UVLO
V
V V
V
R
I
u
LM5156-Q1,LM51561-Q1
SNVSBI7A –JANUARY 2020–REVISED JUNE 2020
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Feature Description (continued)
The external UVLO resistor divider must be designed so that the voltage at the UVLO pin is greater than 1.5 V (typical) when the input voltage is in the desired operating range. The values of R calculated as shown in Equation 1 and Equation 2.
where
V
SUPPLY(ON)
V
SUPPLY(OFF)
UVLO capacitor (C
is the desired start-up voltage of the converter.
is the desired turnoff voltage of the converter. (1)
) is required in case the input voltage drops below V
UVLO
SUPPLY(OFF)
up or during a severe load transient at the low input voltage. If the required UVLO capacitor is large, an additional series UVLO resistor (R
) can be used to quickly raise the voltage at the UVLO pin when the 5-μA
UVLOS
hysteresis current turns on.
UVLOT
and R
UVLOB
can be
momentarily during start-
(2)
Figure 20. Line UVLO Using Three UVLO Resistors
Do not leave the UVLO pin floating. Connect to the BIAS pin if not used.

9.3.2 High Voltage VCC Regulator (BIAS, VCC Pin)

The device has an internal wide input VCC regulator which is sourced from the BIAS pin. The wide input VCC regulator allows the BIAS pin to be connected directly to supply voltages from 3.5 V to 60 V.
The VCC regulator turns on when the device is in the standby or run mode. When the BIAS pin voltage is below the VCC regulation target, the VCC output tracks the BIAS with a small dropout voltage. When the BIAS pin voltage is greater than the VCC regulation target, the VCC regulator provides 6.85-V supply for the N-channel MOSFET driver.
The VCC regulator sources current into the capacitor connected to the VCC pin with a minimum of 35-mA capability. The recommended VCC capacitor value is from 1 µF to 4.7 µF.
The device supports a wide input range from 3.5 V to 60 V in normal configuration. By connecting the BIAS pin directly to the VCC pin, the device supports inputs from 2.97 V to 16 V. This configuration is recommended when the device starts up from a 1-cell battery.
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BIAS
VCC
GATE
CS
GND
FB
COMP
SS
RT
PGOOD
DITHOFF
UVLO/SYNC
V
LOAD
V
SUPPLY
V
LOAD
UVLO > V
UVLO(RISING)
BIAS
VCC
GATE
CS
GND
FB
COMP
SS
RT
PGOOD
DITHOFF
UVLO/SYNC
V
LOAD
V
SUPPLY
(2.97V 16V)
LM5156-Q1,LM51561-Q1
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SNVSBI7A –JANUARY 2020–REVISED JUNE 2020
Feature Description (continued)
Figure 21. 2.97-V Start-Up (BIAS = VCC)
The minimum supply voltage after start-up can be further decreased by supplying the BIAS pin from the boost converter output or from an external power supply as shown in Figure 22.
Figure 22. Decrease the Minimum Operating Voltage After Start-Up
In flyback topology, the internal power dissipation of the device can be decreased by supplying the VCC using an additional transformer winding. In this configuration, the external VCC supply voltage must be greater than the VCC regulation target (V
VCC-REG
), and the BIAS pin voltage must be greater the VCC voltage because the VCC
regulator includes a diode between VCC and BIAS.
Product Folder Links: LM5156-Q1 LM51561-Q1
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