Texas Instruments LM3670MF, LM3670MF-1.2, LM3670MF-1.5, LM3670MF-1.6, LM3670MF-1.8 User Manual

...
1
2
5
4
3
V
IN
SW
FB
EN
GND
4.7 or 10 µH V
OUT
C
IN
4.7 µF
LM3670
V
IN
2.5 V to 5.5 V
R
1
R
2
C
OUT
10 µF
1
2
5
43
V
IN
SW
FB
EN
GND
L1
10 µF
V
OUT
C
IN
4.7 µF
LM3670
V
IN
2.5 V to 5.5 V
C
OUT
10 µF
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LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
LM3670 Miniature Step-Down DC-DC Converter for Ultralow Voltage Circuits

1 Features

1
Input Voltage Range: 2.5 V to 5.5 V
Adjustable Output Voltages (V
): 0.7 V to 2.5 V
OUT
Fixed Output Voltages: 1.2 V, 1.5 V, 1.6 V, 1.8 V,
1.875 V, 3.3V
15-µA Typical Quiescent Current
350-mA Maximum Load Capability
1-MHz PWM Fixed Switching Frequency (Typical)
Automatic PFM and PWM Mode Switching
Low Dropout Operation – 100% Duty Cycle Mode
Internal Synchronous Rectification for High Efficiency
Internal Soft Start
0.1-µA Typical Shutdown Current
Current Overload Protection
Operates from a Single Li-Ion Cell or Three-Cell NiMH/NiCd Batteries
Only Three Tiny Surface-Mount External Components Required (One Inductor, Two Ceramic Capacitors)

2 Applications

Mobile Phones and Handheld Devices
PDAs
Palm-Top PCs
Portable Instruments
Battery-Powered Devices
Typical Application: Fixed Output

3 Description

The LM3670 step-down DC-DC converter is optimized for powering ultralow voltage circuits from a single Li-Ion cell or three-cell NiMH/NiCd batteries. It provides up to 350-mA load current, over an input voltage range from 2.5 V to 5.5 V. There are several different fixed voltage output options available as well as an adjustable output voltage version.
The device offers superior features and performance for mobile phones and similar portable applications with complex power management systems. Automatic intelligent switching between pulse width modulation (PWM) low-noise and pulse frequency modulation (PFM) low-current mode offers improved system control. During full-power operation, a fixed-frequency 1-MHz (typical) PWM mode drives loads from approximately 70 mA to 350 mA maximum, with up to 95% efficiency. Hysteretic PFM mode extends the battery life through reduction of the quiescent current to 15 µA (typical) during light current loads and system standby. Internal synchronous rectification provides high efficiency (90% to 95% typical at loads between 1 mA and 100 mA). In shutdown mode (enable (EN) pin pulled low) the device turns off and reduces battery consumption to 0.1 µA (typical).
The LM3670 is available in a 5-pin SOT-23 package. A high switching frequency (1 MHz typical) allows use of tiny surface-mount components. Only three external surface-mount components, an inductor and two ceramic capacitors, are required.
Device Information
PART NUMBER PACKAGE BODY SIZE (NOM)
LM3670 SOT-23 (5) 2.90 mm × 1.60 mm (1) For all available packages, see the orderable addendum at
the end of the data sheet.
space space
Typical Application: Adjustable Output Voltage
(1)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
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Table of Contents

1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Connection Diagram.............................................. 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 7
7 Detailed Description............................................ 10
7.1 Overview................................................................. 10
7.2 Functional Block Diagram....................................... 10
7.3 Feature Description................................................. 11
7.4 Device Functional Modes........................................ 12
8 Application and Implementation ........................ 14
8.1 Application Information............................................ 14
8.2 Typical Application ................................................. 14
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 20
11 Device and Documentation Support ................. 21
11.1 Device Support .................................................... 21
11.2 Community Resources.......................................... 21
11.3 Trademarks........................................................... 21
11.4 Electrostatic Discharge Caution............................ 21
11.5 Glossary................................................................ 21
12 Mechanical, Packaging, and Orderable
Information........................................................... 21

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (February 2013) to Revision F Page
Changed "(0.7V min) to "0.7 V to 2.5 V" ................................................................................................................................ 1
Added Device Information and Pin Configuration and Functions sections, ESD Ratings and Thermal Information tables, Feature Description, Device Functional Modes, Application and Implementation, Power Supply
Recommendations, Layout, Device and Documentation Support, and Mechanical, Packaging, and Orderable
Information sections................................................................................................................................................................ 1
Deleted phone and fax numbers of manufacturers from suggested inductors table ........................................................... 15
Deleted phone and fax numbers of manufacturers from suggested capacitors table ......................................................... 16
Deleted rest of text from paragraph beginning "For any output voltages...."........................................................................ 17
Deleted row beginning with "1.24... "from Table 3 .............................................................................................................. 18
Changes from Revision D (February 2013) to Revision E Page
Changed layout of National Data Sheet to TI format ........................................................................................................... 19
2
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V
IN
1
GND2EN
3
FB
4
SW
5
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5 Connection Diagram

PIN
NUMBE R
1 V
NAME
IN
2 GND Ground Ground pin. 3 EN Digital Enable input. 4 FB
5 SW Analog
TYPE DESCRIPTION
Power
Analog
Power supply input. Connect to the input filter capacitor ( Typical Application: Fixed Output).
Feedback analog input. Connect to the output filter capacitor (Typical Application: Fixed Output).
Switching node connection to the internal PFET switch and NFET synchronous rectifier. Connect to an inductor with a saturation current rating that exceeds the 750-mA maximum switch peak current limit specification.
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
DBV Package
5-Pin SOT-23
Top View
Pin Functions
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SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
VINpin: voltage to GND –0.2 6 V EN pin: voltage to GND –0.2 6 V FB, SW pins (GND 0.2) VIN+ 0.2 V Junction temperature, T
J-MAX
Maximum lead temperature (soldering, 10 seconds) 260 °C Storage temperature, T
stg
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.

6.2 ESD Ratings

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
V
(ESD)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Electrostatic discharge
Charged-device model (CDM), per JEDEC specification JESD22-
(2)
C101
(1)(2)
MIN MAX UNIT
–45 125 °C
–45 150 °C
VALUE UNIT
(1)
±2000
±200
V

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
Input voltage 2.5 5.5 A Recommended load current 0 350 mA Junction temperature, T Ambient temperature, T
(1) All voltages are with respect to the potential at the GND pin.
J A
(1)
MIN NOM MAX UNIT
–40 125 °C –40 85 °C

6.4 Thermal Information

LM3670
THERMAL METRIC
R
θJA
R
θJC(top)
R
θJB
ψ
JT
ψ
JB
Junction-to-ambient thermal resistance 163.3 °C/W Junction-to-case (top) thermal resistance 114.3 °C/W Junction-to-board thermal resistance 26.8 °C/W Junction-to-top characterization parameter 12.4 °C/W Junction-to-board characterization parameter 26.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(1)
UNITDBV (SOT-23)
5 PINS
4
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6.5 Electrical Characteristics

Unless otherwise specified, limits for typical values are TJ= 25°C, and minimum and maximum limits apply over the full operating junction temperature range (40°C TJ≤ +125°C); VIN= 3.6 V, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IN
Input voltage See
Fixed output voltage: 1.2 V
Fixed output voltage: 1.5 V
Fixed output voltage: 1.6 V, 1.875 V
V
OUT
Fixed output voltage: 1.8 V
Fixed output voltage: 3.3 V
Adjustable output voltage
(2)
Line_reg Line regulation Load_reg Load regulation 150 mA I
V
REF
I
Q_SHDN
I
Q
V
UVLO
R
DSON (P)
R
DSON (N)
I
LKG (P)
I
LKG (N)
I
LIM
Internal reference voltage 0.5 V Shutdown supply current TA= 85ºC 0.1 1 µA
DC bias current into V
Minimum VINbelow which V disabled
IN
is
OUT
Pin-pin resistance for PFET VIN= VGS= 3.6V 360 690 m Pin-pin resistance for NFET VIN= VGS= 3.6 V 250 660 m P channel leakage current VDS= 5.5 V, TA= 25°C 0.1 1 µA N channel leakage current VDS= 5.5 V, TA= 25°C 0.1 1.5 µA Switch peak current limit 400 620 750 mA
(1)
2.5 V VIN≤ 5.5 V I
= 10 mA
OUT
2.5 V VIN≤ 5.5 V 0 mA I
OUT
150 mA
2.5 V VIN≤ 5.5 V I
= 10 mA
OUT
2.5 V VIN≤ 5.5 V 0 mA I
OUT
350 mA
2.5 V VIN≤ 5.5 V I
= 10 mA
OUT
2.5 V VIN≤ 5.5V 0 mA I
OUT
350 mA
2.5 V VIN≤ 5.5 V I
= 10 mA
OUT
2.5 V VIN≤ 5.5 V 0 mA I
OUT
350 mA
3.6 V VIN≤ 5.5 V I
= 10 mA
OUT
3.6V VIN≤ 5.5V 0 mA I
OUT
350 mA
2.5 V VIN≤ 5.5 V I
= 10 mA
OUT
2.5 V VIN≤ 5.5 V 0 mA I
OUT
150 mA
2.5 V VIN≤ 5.5 V I
= 10 mA
OUT
350 mA 0.0014 %/mA
OUT
No load, device is not switching (V
forced higher than
OUT
programmed output voltage) TA= 40°C TJ≤ 125°C 2.4 V
OUT
= 1.8 V, I
–4.5%
–2.5%
–2.5%
–5.5%
–1.5%
–4.5%
–2.5%
= 150 mA, EN = VIN.
OUT
2.5 5.5 V
–2%
4%
4%
4%
–5%
4%
4%
4%
3%
3%
–2%
–6%
4%
4%
4.5%
–4%
4.5%
0.26 %/V
15 30 µA
(1) The input voltage range recommended for the specified output voltages are given below: VIN= 2.5 V to 5.5 V for 0. 7 V V
V, VIN= ( V
(2) Output voltage specification for the adjustable version includes tolerance of the external resistor divider.
OUT
+ V
DROPOUT
) to 5.5 for 1.875 V
3.3 V, where V
OUT
DROPOUT
= I
LOAD
× (R
DSON (P)
+ R
INDUCTOR
).
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OUT
< 1.875
5
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
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Electrical Characteristics (continued)
Unless otherwise specified, limits for typical values are TJ= 25°C, and minimum and maximum limits apply over the full operating junction temperature range (40°C TJ≤ +125°C); VIN= 3.6 V, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
η Efficiency
V V I ƒ
IH IL
EN
OSC
Logic high input 1.3 V Logic low input 0.4 V Enable (EN) input current 0.01 1 µA Internal oscillator frequency PWM mode 550 1000 1300 kHz
VIN= 3.6 V, V I
= 1 mA
LOAD
VIN= 3.6 V, V I
= 10 mA
LOAD
VIN= 3.6 V, V I
= 100 mA
LOAD
VIN= 3.6 V, V I
= 200 mA
LOAD
VIN= 3.6 V, V I
= 300 mA
LOAD
VIN= 3.6 V, V I
= 350 mA
LOAD
OUT
OUT
OUT
OUT
OUT
OUT
= 1.8 V
= 1.8 V
= 1.8 V
= 1.8 V
= 1.8 V
= 1.8 V
OUT
= 1.8 V, I
= 150 mA, EN = VIN.
OUT
91%
94%
94%
94%
92%
90%
6
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I
LOAD
(mA)
40
45
50
55
60
65
70
75
80
85
90
95
100
EFFICIENCY (%)
VIN = 5.0V
VIN = 2.7V
VIN = 3.7V
10
3
10
2
10
1
10
-2
10
-1
10
0
2.5 3 3.5 4 4.5 5 5.5 6 VIN (V)
75
80
85
90
95
100
70
EFFICIENCY (%)
I
LOAD
= 1 mA
I
LOAD
= 300 mA
I
LOAD
= 150 mA
0 50 100 150 200 250 300 350
I
LOAD
(mA)
1.7
1.72
1.74
1.76
1.78
1.8
1.82
1.84
1.86
1.88
1.9
V
OUT
(V)
PFM Mode
PWM Mode
-40 TEMPERATURE (°C)
1.77
1.78
1.79
1.80
1.81
1.82
1.83
V
OUT
(V)
806040200-20
I
OUT
= 10 mA
PFM mode
I
OUT
= 150 mA
PWM mode
VIN = 3.6V
VIN = 2.5V VIN = 3.6V
VIN = 5.5V
2.5 3 3.5 4 4.5 5 5.5 VIN (V)
10
15
20
NO LOAD I
QUIESCENT
(PA)
TA = 85°C
TA = 25°C
TA = -40°C
-40 -20 0 20 40 60 80
TEMPERATURE (°C)
0
0.05
0.1
I
SHUTDOWN
(PA)
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6.6 Typical Characteristics

Unless otherwise stated, VIN= 3.6 V and V
OUT
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
= 1.8 V.
Figure 1. IQ(Non-Switching) vs V
Figure 3. V
OUT
vs V
IN
IN
Figure 2. IQvs Temperature
Figure 4. V
OUT
vs I
OUT
Figure 5. Efficiency vs I
OUT
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Figure 6. Efficiency vs V
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IN
7
V
OUT
(50 mV/Div)
I
LOAD
= 280 mA
TIME (100 Ps/DIV)
CURRENT LOAD STEP (3 mA - 280 mA)
I
LOAD
= 3 mA
V
OUT
(50 mV/Div)
I
LOAD
= 70 mA
TIME (100 Ps/DIV)
CURRENT LOAD STEP (0 mA - 70 mA)
I
LOAD
= 0 mA
Inductor Current = 200 mA/Div
VIN= 3.6V
VIN= 4.6V
TIME (100 ms/DIV)
LINE T
RANSIENT
V
OUT
= 1.8V
(20 mV/Div)
V
OUT
= 1.8V
I
OUT
= 100 mA
VINrisetime= 10 ms
VIN= 3.6V
TIME (200 ms/DIV)
LINE T
RANSIENT
VIN= 2.6V
(20 mV/Div)
2.5 3 3.5 4 4.5 5 5.5 VIN (V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
R
DSon
- N, P CHANNEL (:)
N FET
P FET
TA = 85°C TA = 25°C
TA = -40°C
-40 -20
-10
0 10 20 30 40 50 60 70 80
TEMPERATURE (°C)
840
850
860
870
880
890
900
910
920
930
940
950
960
970
980
990
1000
1010
FREQUENCY (kHz)
-30
I
LOAD
= 150 mA
VIN = 2.5V
VIN = 5.5V
VIN = 3.6V
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
Typical Characteristics (continued)
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Unless otherwise stated, VIN= 3.6 V and V
Figure 7. Frequency vs Temperature
OUT
= 1.8 V.
Figure 8. R
vs. VINP and N Channels
DSON
VIN= 2.6 V to 3.6 V I
8
I
= 3 mA to 280 mA
LOAD
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= 100 mA
LOAD
Figure 9. Line Transient
Figure 11. Load Transient
VIN= 3.6 V to 4.6 V I
I
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= 0 mA to 70 mA
LOAD
= 100 mA
LOAD
Figure 10. Line Transient
Figure 12. Load Transient
TIME (100 Ps/DIV)
CURRENT LOAD STEP (3 mA - 280 mA)
VIN (2V/Div)
V
OUT
(1V/Div)
(200 mA/
Div)
Inductor
Current
TIME (2 Ps/DIV)
PFM MODE
V
SWITCH
(5V/Div)
V
OUT
(20 mV/Div)
Inductor Current
(100 mA/Div)
TIME (1 Ps/DIV)
PWM MODE
V
SWITCH
(5V/Div)
V
OUT
(20 mV/Div)
Inductor Current
(200 mA/Div)
I
LOAD
= 150 mA
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Typical Characteristics (continued)
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
Unless otherwise stated, VIN= 3.6 V and V
Figure 13. PFM Mode VSW, V
OUT
, I
= 1.8 V.
OUT
INDUCTOR
vs Time Figure 14. PWM Mode VSW, V
OUT
, I
INDUCTOR
vs Time
I
LOAD
= 350 mA
Figure 15. Soft Start VIN, V
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OUT
, I
INDUCTOR
vs Time
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+
-
+
-
1 MHz
Oscillator
Soft Start
Ramp
Generator
+
-
+
-
Thermal
Shutdown
Undervoltage
Lockout
V
REF
+
-
0.5V
Error Amp
Control Logic Driver
Current Limit
Comparator
Ref1
PFM Current Comparator
Ref2
SW
Zero Crossing
Comparator
FB
EN
V
IN
PWM Comparator
pfm_low
pfm_hi
GND
Bandgap
+
-
Vcomp
1.0V
Frequency
Compensation
Adj Version
Fixed Version
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SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
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7 Detailed Description

7.1 Overview

The LM3670, a high-efficiency step-down DC-DC switching buck converter, delivers a constant voltage from either a single Li-Ion or three-cell NiMH/NiCd battery to portable devices such as cell phones and PDAs. Using a voltage mode architecture with synchronous rectification, the LM3670 can deliver up to 350 mA depending on the input voltage and output voltage (voltage head room), and the inductor chosen (maximum current capability).
There are three modes of operation depending on the current required: pulse width modulation (PWM), pulse frequency modulation (PFM), and shutdown. PWM mode handles current loads of approximately 70 mA or higher. Lighter output current loads cause the device to automatically switch into PFM for reduced current consumption (IQ= 15 µA typical) and a longer battery life. Shutdown mode turns off the device, offering the lowest current consumption (I
SHUTDOWN
The LM3670 can operate up to a 100% duty cycle (PMOS switch always on) for low dropout control of the output voltage. In this way the output voltage is controlled down to the lowest possible input voltage.
Additional features include soft-start, undervoltage lockout, current overload protection, and thermal overload protection. As shown in Figure 17, only three external power components are required for implementation.

7.2 Functional Block Diagram

= 0.1 µA typical).
10
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-V
OUT
VIN-V
OUT
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SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016

7.3 Feature Description

7.3.1 Circuit Operation

The LM3670 operates as follows. During the first portion of each switching cycle, the control block in the LM3670 turns on the internal PFET switch. This allows current to flow from the input through the inductor to the output filter capacitor and load. The inductor limits the current to a ramp with a slope of:
(1)
by storing energy in a magnetic field. During the second portion of each cycle, the controller turns the PFET switch off, blocking current flow from the input, and then turns the NFET synchronous rectifier on. The inductor draws current from ground through the NFET to the output filter capacitor and load, which ramps the inductor current down with a slope of:
(2)
The output filter stores charge when the inductor current is high, and releases it when low, smoothing the voltage across the load.

7.3.2 Soft Start

The LM3670 has a soft-start circuit that limits in-rush current during start-up. Typical start-up times with a 10-µF output capacitor and 350-mA load is 400 µs:
Table 1. Typical Start-Up Times for Soft Start
INRUSH CURRENT (mA) DURATION (µs)
0 32
70 224 140 256 280 256 620 until soft start ends

7.3.3 LDO - Low Dropout Operation

The LM3670 can operate at 100% duty cycle (no switching, PMOS switch is completely on) for low dropout support of the output voltage. In this way the output voltage is controlled down to the lowest possible input voltage.
The minimum input voltage needed to support the output voltage is
V
IN_MIN
= I
LOAD
× (R
DSON,PFET
+ R
INDUCTOR
) + V
OUT
where
I
R
R
= load current
LOAD
DSON, PFET INDUCTOR
= the drain to source resistance of PFET switch in the triode region
= the inductor resistance (3)
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PFM Peak
=
V
IN
64:
117 mA +
(typ)
MODE
<
V
IN
50:
26 mA +
(typ)
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SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
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7.4 Device Functional Modes

7.4.1 PWM Operation

During PWM operation the converter operates as a voltage-mode controller with input voltage feed forward. This allows the converter to achieve excellent load and line regulation. The DC gain of the power stage is proportional to the input voltage. To eliminate this dependence, feed forward inversely proportional to the input voltage is introduced.
7.4.1.1 Internal Synchronous Rectification
While in PWM mode, the LM3670 uses an internal NFET as a synchronous rectifier to reduce rectifier forward voltage drop and associated power loss. Synchronous rectification provides a significant improvement in efficiency whenever the output voltage is relatively low compared to the voltage drop across an ordinary rectifier diode.
7.4.1.2 Current Limiting
A current limit feature allows the LM3670 to protect itself and external components during overload conditions PWM mode implements cycle-by-cycle current limiting using an internal comparator that trips at 620 mA (typical).

7.4.2 PFM Operation

At very light load, the converter enters PFM mode and operates with reduced switching frequency and supply current to maintain high efficiency.
The part automatically transition into PFM mode when either of two conditions occurs for a duration of 32 or more clock cycles:
1. The inductor current becomes discontinuous
2. The peak PMOS switch current drops below the I
MODE
level:
(4)
During PFM operation, the converter positions the output voltage slightly higher than the nominal output voltage in PWM operation, allowing additional headroom for voltage drop during a load transient from light to heavy load. The PFM comparator senses the output voltage via the feedback pin and control the switching of the output FETs such that the output voltage ramps between 0.8% and 1.6% (typical) above the nominal PWM output voltage. If the output voltage is below the high PFM comparator threshold, the PMOS power switch is turned on. It remains on until the output voltage exceeds the ‘high’ PFM threshold or the peak current exceeds the I
PFM
level
set for PFM mode. The peak current in PFM mode is:
(5)
Once the PMOS power switch is turned off, the NMOS power switch is turned on until the inductor current ramps to zero. When the NMOS zero-current condition is detected, the NMOS power switch is turned off. If the output voltage is below the high PFM comparator threshold (see Figure 16), the PMOS switch is again turned on and the cycle is repeated until the output reaches the desired level. Once the output reaches the high PFM threshold, the NMOS switch is turned on briefly to ramp the inductor current to zero and then both output switches are turned off and the part enters an extremely low power mode. Quiescent supply current during this sleep mode is less than 30 µA, which allows the part to achieve high efficiencies under extremely light load conditions. When the output drops below the low PFM threshold, the cycle repeats to restore the output voltage to approximately
1.6% above the nominal PWM output voltage. If the load current increases during PFM mode (see Figure 16) causing the output voltage to fall below the ‘low2’
PFM threshold, the part automatically transitions into fixed-frequency PWM mode.
12
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Product Folder Links: LM3670
High PFM Threshold
~1.016 × V
OUT
Low1 PFM Threshold
~1.008 × V
OUT
PFM Mode at Light Load
PWM Mode at
Moderateto-Heavy
Loads
Pfet on
until
Ipfm limit
reached
Nfet on
drains
inductor
current
until
I inductor = 0
High PFM
Voltage
Threshold
reached,
go into
sleep mode
Low PFM
Threshold,
turn on
PFET
Current load
increases,
draws VOUT
towards Low2 PFM Threshold
Low2 PFM Threshold,
switch back to PWM mode
Load current increases
Low2 PFM Threshold
V
OUT
Z-
Ax
is
Z
-
Axis
www.ti.com
Device Functional Modes (continued)
Figure 16. Operation in PFM Mode and Transition to PWM Mode
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016

7.4.3 Shutdown

Setting the EN input pin low (< 0.4 V) places the LM3670 in shutdown mode. During shutdown the PFET switch, NFET switch, reference, control and bias circuitry of the LM3671 are turned off. Setting EN high (> 1.3 V) enables normal operation. It is recommended to set EN pin low to turn off the LM3671 during system power up and undervoltage conditions when the supply is less than 2.5 V. Do not leave the EN pin floating.
Product Folder Links: LM3670
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13
V
OUT
=
VIN-V
OUT
2 L
I
LOAD
+
(
)
V
OUT
V
IN
(
)
(
1 f
)
MAX
=
I
RIPPLE
I
LOAD
+
1
2
5
43
V
IN
SW
FB
EN
GND
L1
10 µF
V
OUT
C
IN
4.7 µF
LM3670
V
IN
2.5 V to 5.5 V
C
OUT
10 µF
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
www.ti.com

8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The external control of this device is very easy. First make sure the correct voltage been applied at VINpin, then simply apply the voltage at EN pin according to the Electrical Characteristics to enable or disable the output voltage.

8.2 Typical Application

8.2.1 Typical Application: Fixed Output

Figure 17. LM3670 Typical Application, Fixed Output
8.2.1.1 Design Requirements
For typical CMOS voltage regulator applications, use the parameters listed in Table 2.
Table 2. Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
Minimum input voltage 2.5 V
Minimum output voltage 1.2 V
Maximum load current 350 mA
8.2.1.2 Detailed Design Procedure
8.2.1.2.1 Inductor Selection
There are two main considerations when choosing an inductor: the inductor current must not saturate, and the inductor current ripple is small enough to achieve the desired output voltage ripple.
There are two methods to choose the inductor current rating.
8.2.1.2.1.1 Method 1
The total current is the sum of the load and the inductor ripple current. This can be written as
(6)
where
I
LOAD
VIN= input voltage
14
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= load current
Product Folder Links: LM3670
V
PP-RMS
= V
PP-C
2
+ V
PP-ESR
2
V
OUT
=
V
PP-ESR
= IPP * R
ESR
V
PP-C
=
f*8*C
I
PP
I
RMS OUTMAX
*
* (1 -
)
V
OUT
V
IN
V
OUT
V
IN
= I
The worst case IRMS is:
=
2
IRMS
IRMS
(duty cycle = 50%)
) * (
1
f
)) * (L >= (
VIN - V
OUT
I
PP
V
OUT
V
IN
LM3670
www.ti.com
L = inductor
ƒ = switching frequency
I
RIPPLE
8.2.1.2.1.2 Method 2
= peak-to-peak current (7)
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
A more conservative approach is to choose an inductor that can handle the current limit of 700 mA. Given a peak-to-peak current ripple (IPP) the inductor needs to be at least
(8)
A 10-µH inductor with a saturation current rating of at least 800 mA is recommended for most applications. Resistance of the inductor resistance must be less than around 0.3 for good efficiency. Table 3 lists suggested inductors and suppliers. For low-cost applications, an unshielded bobbin inductor is suggested. For noise critical applications, a toroidal or shielded-bobbin inductor must be used. A good practice is to lay out the board with overlapping footprints of both types for design flexibility. This allows substitution of a low-noise toroidal inductor, in the event that noise from low-cost bobbin models is unacceptable.
8.2.1.2.2 Input Capacitor Selection
A ceramic input capacitor of 4.7 µF is sufficient for most applications. A larger value may be used for improved input voltage filtering. The input filter capacitor supplies current to the PFET switch of the LM3670 in the first half of each cycle and reduces voltage ripple imposed on the input power source. The low equivalent series resistance (ESR) of a ceramic capacitor provides the best noise filtering of the input voltage spikes due to this rapidly changing current. Select an input filter capacitor with a surge current rating sufficient for the power-up surge from the input power source. The power-up surge current is approximately the value of the capacitor (µF) times the voltage rise rate (V/µs). The input current ripple can be calculated by :
8.2.1.2.3 Output Capacitor Selection
The output filter capacitor smooths out current flow from the inductor to the load, maintaining a steady output voltage during transient load changes and reduces output voltage ripple. These capacitors must be selected with sufficient capacitance and sufficiently low ESR to perform these functions.
The output ripple current can be calculated as:
Voltage peak-to-peak ripple due to capacitance = Voltage peak-to-peak ripple due to ESR =
Voltage peak-to-peak ripple, root mean squared =
Table 3. Suggested Inductors and Their Suppliers
MODEL VENDOR
IDC2512NB100M Vishay
DO1608C-103 Coilcraft ELL6RH100M Panasonic
CDRH5D18-100 Sumida
Product Folder Links: LM3670
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(9)
15
V
OUT
(50 mV/Div)
I
LOAD
= 0 mA
TIME (100 Ps/DIV)
CURRENT LOAD STEP (0 mA - 280 mA)
I
LOAD
= 280 mA
V
OUT
(50 mV/Div)
I
LOAD
= 350 mA
TIME (100 Ps/DIV)
CURRENT LOAD STEP (0 mA - 350 mA)
I
LOAD
= 0 mA
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
www.ti.com
Note that the output ripple is dependent on the current ripple and the equivalent series resistance of the output capacitor (R
Because these two components are out-of-phase the RMS value is used. The R well as temperature dependent); make sure the frequency of the R
ESR
).
is frequency dependent (as
given is the same order of magnitude as
ESR
ESR
the switching frequency.
Table 4. Suggested Capacitors And Their Suppliers
MODEL TYPE VENDOR
10 µF for C
OUT
VJ1812V106MXJAT Ceramic Vishay
LMK432BJ106MM Ceramic Taiyo-Yuden
JMK325BJ106MM Ceramic Taiyo-Yuden
4.7 µF for C
IN
VJ1812V475MXJAT Ceramic Vishay
EMK325BJ475MN Ceramic Taiyo-Yuden C3216X5R0J475M Ceramic TDK
8.2.1.3 Application Curves
I
= 0 mA to 280 mA
LOAD
Figure 18. Load Transient
16
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I
= 0 mA to 350 mA
LOAD
Figure 19. Load Transient
Product Folder Links: LM3670
1
=
1
2 S R1 10 kHz
V
OUT
=
R
1
R
VFB *
+ 1
( )
1
2
5
4
3
V
IN
SW
FB
EN
GND
L1
4.7 or 10 µH V
OUT
C
IN
4.7 µF
LM3670
V
IN
2.5 V to 5.5 V
R
1
R
2
C
OUT
10 µF
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8.2.2 Typical Application: Adjustable Output

Figure 20. LM3670 Typical Application: Adjustable Output
8.2.2.1 Design Requirements
For adjustable LM3670 option, use the design parameters in Table 5
Table 5. Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
Input voltage range 2.5 V to 5.5
Input capacitor 4.7 µF
Output capacitor 10 µF
Inductor 4.7 µH or 10 µH
ADJ programmable output voltage 0.7 V to 2.5 V
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
8.2.2.2 Detailed Design Procedure
8.2.2.2.1 Output Voltage Selection for Adjustable LM3670
The output voltage of the adjustable parts can be programmed through the resistor network connected from V to VFBthen to GND. V
is adjusted to make VFBequal to 0.5 V. The resistor from VFBto GND (R2) must be at
OUT
OUT
least 100 Kto keep the current sunk through this network well below the 15-µA quiescent current level (PFM mode with no switching) but large enough that it is not susceptible to noise. If R2is 200 K, and VFBis 0.5 V, then the current through the resistor feedback network is 2.5 µA (IFB= 0.5 V / R2). The output voltage formula is:
where
V
VFB= feedback voltage (0.5 V typical)
R1Resistor from V
R2Resistor from V
= output voltage (V)
OUT
to VFB()
OUT
to GND () (10)
OUT
For output voltage greater than or equal to 0.7 V a frequency zero must be added at 10 kHz for stability.
(11)
For any output voltages equal to 0.7 V or 2.5 V, a pole must also be placed at 10 kHz (see Table 6).
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17
V
OUT
(50 mV/Div)
I
LOAD
= 50 mA
TIME (100 Ps/DIV)
CURRENT LOAD STEP (50 mA - 350 mA)
I
LOAD
= 350 mA
V
OUT
(50 mV/Div)
I
LOAD
= 300 mA
TIME (100 ms/DIV)
CURREN
T LOAD ST
EP (100 mA
- 300 mA)
I
LOAD
=100mA
Inductor Current = 200 mA/Div
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016
www.ti.com
Table 6. Adjustable LM3670 Configurations for Various V
OUT
VOUT (V) R1 (K) R2 (K) C1 (pF) C2 (pF) L (µH) CIN(µF) C
0.7 80.6 200 200 150 4.7 4.7 10
0.8 120 200 130 none 4.7 4.7 10
0.9 160 200 100 none 4.7 4.7 10
1.0 200 200 82 none 4.7 4.7 10
1.1 240 200 68 none 4.7 4.7 10
1.2 280 200 56 none 4.7 4.7 10
1.24 221 150 75 120 4.7 4.7 10
1.5 402 200 39 none 10 4.7 10
1.6 442 200 39 none 10 4.7 10
1.7 487 200 33 none 10 4.7 10
1.875 549 200 30 none 10 4.7 14.7
2.5 806 200 22 82 10 4.7 22
(1) (10 || 4.7)
8.2.2.3 Application Curves
OUT
(µF)
(1)

9 Power Supply Recommendations

The LM3670 is designed to operate from a stable input supply range of 2.5 V to 5.5 V.
18
I
I
= 50 mA to 350 mA
LOAD
Figure 21. Load Transient
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= 100 mA to 300 mA
LOAD
Figure 22. Load Transient
Product Folder Links: LM3670
LM3670
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SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016

10 Layout

10.1 Layout Guidelines

PC board layout is an important part of DC-DC converter design. Poor board layout can disrupt the performance of a DC-DC converter and surrounding circuitry by contributing to EMI, ground bounce, and resistive voltage loss in the traces, which can send erroneous signals to the DC-DC converter device, resulting in poor regulation or instability.
Good layout for the LM3670 can be implemented by following a few simple design rules, as shown in Figure 23.
Place the LM3670, inductor and filter capacitors close together and make the traces short. The traces between these components carry relatively high switching currents and act as antennas. Following this rule reduces radiated noise. Place the capacitors and inductor within 0.2 in. (5 mm) of the LM3670.
Arrange the components so that the switching current loops curl in the same direction. During the first half of each cycle, current flows from the input filter capacitor, through the LM3670 and inductor to the output filter capacitor and back through ground, forming a current loop. In the second half of each cycle, current is pulled up from ground, through the LM3670 by the inductor, to the output filter capacitor and then back through ground, forming a second current loop. Routing these loops so the current curls in the same direction prevents magnetic field reversal between the two half-cycles and reduces radiated noise.
Connect the ground pins of the LM3670, and filter capacitors together using generous component-side copper fill as a pseudo-ground plane. Then, connect this to the ground-plane (if one is used) with several vias. This reduces ground-plane noise by preventing the switching currents from circulating through the ground plane. It also reduces ground bounce at the LM3670 by giving it a low-impedance ground connection.
Use wide traces between the power components and for power connections to the DC-DC converter circuit. This reduces voltage errors caused by resistive losses across the traces.
Route noise sensitive traces, such as the voltage feedback path, away from noisy traces between the power components. The voltage feedback trace must remain close to the LM3670 circuit, and be direct but must be routed opposite to noisy components. This reduces EMI radiated onto the DC-DC converter’s own voltage feedback trace.
Place noise sensitive circuitry, such as radio IF blocks, away from the DC-DC converter, CMOS digital blocks and other noisy circuitry. Interference with noise-sensitive circuitry in the system can be reduced through distance.
In mobile phones, for example, a common practice is to place the DC-DC converter on one corner of the board, arrange the CMOS digital circuitry around it (because this also generates noise), and then place sensitive pre­amplifiers and IF stages on the diagonally opposing corner. Often, the sensitive circuitry is shielded with a metal pan and, by using low-dropout linear regulators, power to the circuit is post-regulated to reduce conducted noise.
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19
EN
G
ND
S
W
GND
EN
POST
PIN
The light shaded area is the top surface ground. C , C , Feedback R
and C grounds all come to this area which is as far away from the SW pin
as possible to avoid the noise created at the SW pin.
Note that the top and bottom GND sides are kept away from the SW pin to
avoid picking up noise from the SW pin which swings from GND to V .
OUT IN
IN
EN post pin is connected to EN with a bottom side trace to
maintain unbroken ground plane on top of board
C
OUT
C
IN
R1_fb
C1_fb
R2_fb
C2_fb
L1
EN,GND,V ,FB,SW are
the pads for the SOT-23-5
package
IN
FB
As many through holes
as possible here to
connect the top and
bottom ground planes
V
IN
S
W
V
OUT
The V , SW, V traces,
C , C traces & pads
should be thick - they are
high current paths
IN OUT
IN OUT
Bottom surface - the darker
shaded area is all GND EXCEPT
for area around SW to avoid
picking up switch noise.
If possible put the feedback Rs and Cs on the back side so the C
GND can move closer to the IC GND
OUT
SW node is switching
between V and GND at
1 MHz - VERY NOISY! -
keep all GNDs and GND
planes away!
IN
LM3670
SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016

10.2 Layout Example

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20
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Figure 23. LM3670 Layout
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LM3670
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SNVS250F –NOVEMBER 2004–REVISED FEBRUARY 2016

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Product Folder Links: LM3670
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21
PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device Status
LM3670MF-1.2/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS
LM3670MF-1.5/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS
LM3670MF-1.6/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS
LM3670MF-1.8 NRND SOT-23 DBV 5 TBD Call TI Call TI -40 to 85 SDCB
LM3670MF-1.8/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS
LM3670MF-1.875/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS
LM3670MF-3.3 NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 85 SDEB
LM3670MF-3.3/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS
LM3670MF-ADJ/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS
LM3670MFX-1.2/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS
LM3670MFX-1.8/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS
LM3670MFX-ADJ/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
Package Type Package
(1)
Drawing
Pins Package
Qty
Eco Plan
(2)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
& no Sb/Br)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
CU SN Level-1-260C-UNLIM -40 to 85 SCZB
CU SN Level-1-260C-UNLIM -40 to 85 S82B
CU SN Level-1-260C-UNLIM -40 to 85 SDBB
CU SN Level-1-260C-UNLIM -40 to 85 SDCB
CU SN Level-1-260C-UNLIM -40 to 85 SEFB
CU SN Level-1-260C-UNLIM -40 to 85 SDEB
CU SN Level-1-260C-UNLIM -40 to 85 SDFB
CU SN Level-1-260C-UNLIM -40 to 85 SCZB
CU SN Level-1-260C-UNLIM -40 to 85 SDCB
CU SN Level-1-260C-UNLIM -40 to 85 SDFB
(4/5)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
7-Jan-2016
Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
7-Jan-2016
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 8-Jan-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type
LM3670MF-1.2/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3670MF-1.5/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3670MF-1.6/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3670MF-1.8/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM3670MF-1.875/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM3670MF-3.3 SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM3670MF-3.3/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM3670MF-ADJ/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM3670MFX-1.2/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM3670MFX-1.8/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM3670MFX-ADJ/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
Package Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm)B0(mm)K0(mm)P1(mm)W(mm)
Quadrant
Pin1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 8-Jan-2016
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM3670MF-1.2/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3670MF-1.5/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3670MF-1.6/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3670MF-1.8/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0
LM3670MF-1.875/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0
LM3670MF-3.3 SOT-23 DBV 5 1000 210.0 185.0 35.0
LM3670MF-3.3/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0
LM3670MF-ADJ/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0 LM3670MFX-1.2/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0 LM3670MFX-1.8/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0
LM3670MFX-ADJ/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0
Pack Materials-Page 2
IMPORTANT NOTICE
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed.
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