The LM236-2.5 and LM336-2.5 integrated
circuits are precision 2.5-V shunt regulator
diodes. These monolithic references operate as
low-temperature-coefficient 2.5-V zeners with a
0.2-Ω dynamic impedance. A third terminal
provided on the circuit allows the reference
voltage and temperature coefficient to be easily
trimmed.
LM236-2.5, LM336-2.5
2.5-V INTEGRATED REFERENCE CIRCUITS
SLVS063B – NOVEMBER 1988 – REVISED JULY 1999
D PACKAGE
(TOP VIEW)
CATHODE
8
NC
7
NC
6
ADJ
5
ANODE
CATHODE
ADJ
CATHODEANODE
symbol
NC
1
NC
2
NC
3
ANODE
NC-No internal connection
4
LP PACKAGE
(TOP VIEW)
ADJ
The series is useful as precision 2.5-V low-voltage
references (V
) for digital voltmeters, power
Z
supplies, or operational-amplifier circuitry . The 2.5-V voltage reference makes it convenient to obtain a stable
reference from 5-V logic supplies. Devices in this series operate as shunt regulators, and can be used as either
positive or negative voltage references.
The LM236-2.5 is characterized for operation from –25°C to 85°C. The LM336-2.5 is characterized for operation
from 0°C to 70°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
0°C to 70°CLM336D-2.5LM336LP-2.5LM336Y-2.5
–25°C to 85°CLM236D-2.5LM236LP-2.5—
The D package is available taped and reeled. Add the suffix R to the device type (i.e.,
LM336DR-2.5). Chip forms are tested at 25°C.
SMALL OUTLINEPLASTIC
(D)(LP)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 1999, Texas Instruments Incorporated
1
LM236-2.5, LM336-2.5
Operating free-air temperature, T
°C
2.5-V INTEGRATED REFERENCE CIRCUITS
SLVS063B – NOVEMBER 1988 – REVISED JULY 1999
schematic diagram
CATHODE
Q8
20 pF
Q2
Q1
Q3
All component values are nominal
Q7
10 kΩ
30 pF
Q4
Q6
Q5
Q14
24
kΩ
720 Ω
Q9
Q12
24
kΩ
Q10
Q11
6.6 kΩ
500 Ω
30 kΩ
6.6 kΩ
Q13
ADJ
ANODE
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or LP package 260°C. . . . . . . . . . . . . . .
Storage temperature range, T
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. Maximum power dissipation is a function of TJ(max),
ambient temperature is PD = (TJ(max) – TA)/
2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace
length of zero.
, and TA. The maximum allowable power dissipation at any allowable
θ
JA
JA
. Operating at the absolute maximum TJ of 150°C can impact reliability.
†
recommended operating conditions
p
2
MINMAXUNIT
p
A
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LM236-2.5–2585
LM336-2.5070
°
PARAMETER
TEST CONDITIONS
T
†
UNIT
VZReference voltage
I
mA
25°C
V
∆V
g
I
400 µA to 10 mA
mV
I
Ω
PARAMETER
TEST CONDITIONS
UNIT
LM236-2.5, LM336-2.5
2.5-V INTEGRATED REFERENCE CIRCUITS
SLVS063B – NOVEMBER 1988 – REVISED JULY 1999
electrical characteristics at specified free-air temperature (unless otherwise noted)
A
= 1
Z
Change in reference
∆V
∆V
z
z
†
Full range is –25°C to 85°C for the LM236-2.5 and 0°C to 70°C for the LM336-2.5.
voltage with
Z(∆T)
temperature
Change in reference
Z(∆I)
voltage with current
Long-term change
Z(∆t)
in reference voltage
Reference
impedance
VZ adjusted to 2.490 V ,
IZ = 1 mA
=
Z
IZ = 1 mA25°C2020ppm/khr
= 1 mA,f = 1 kHz
Z
LM236, LM336
LM236A, LM336B
°
Full range3.591.86mV
25°C2.662.610
Full range310312
25°C0.20.60.21
Full range
electrical characteristics, TA = 25°C
V
∆V
∆V
z
Z
z
Reference voltageIZ = 1 mA2.392.492.59V
Change in reference voltage with currentIZ = 400 µA to 10 mA2.610mV
Z(∆I)
Long-term change in reference voltageIZ = 1 mA20ppm/khr
Z(∆t)
Reference impedanceIZ = 1 mA, f = 1 kHz0.21Ω
LM236-2.5LM336-2.5
MINTYPMAXMINTYPMAX
2.442.492.542.392.492.59
2.4652.49 2.5152.442.492.54
0.410.41.4
LM336Y-2.5
MINTYPMAX
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
LM236-2.5, LM336-2.5
2.5-V INTEGRATED REFERENCE CIRCUITS
SLVS063B – NOVEMBER 1988 – REVISED JULY 1999
TYPICAL CHARACTERISTICS
CHANGE IN REFERENCE VOLTAGE
REFERENCE CURRENT
2.5
TA = 25°C
2
1.5
1
0.5
Z
∆V – Change in Reference Voltage – mV
0
0246
IZ – Reference Current – mA
Figure 1
vs
100
IZ = 1 mA
TA = – 55°C to 125°C
250
Hz
200
nV/
150
– Noise Voltage –V
100
n
810
50
REFERENCE IMPEDANCE
vs
FREQUENCY
NOISE VOLTAGE
vs
FREQUENCY
IZ = 1 mA
TA = 25°C
101001 k
f – Frequency – Hz
Figure 2
10 k100 k
Ωz
10
1
– Reference Impedance –
z
0.1
0.010.11
10100
f – Frequency – kHz
Figure 3
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LM236-2.5, LM336-2.5
2.5-V INTEGRATED REFERENCE CIRCUITS
SLVS063B – NOVEMBER 1988 – REVISED JULY 1999
APPLICATION INFORMATION
5 V
2.49 kΩ
2.5 V
†
IN457
5 V
LM236-2.5
2.49 kΩ
2.5 V
10 kΩ
IN457
‡
†
LM236-2.5
NC
Figure 4. 2.5-V Reference
Figure 6. Wide-Input-Range Reference
VI = 3.5 – 40 V
LM334
LM336-2.5
V+
V–
†
Any silicon signal diode
‡
Adjust to 2.49 V
Figure 5. 2.5-V Reference With Minimum
Temperature Coefficient
R
68.1 Ω
VO = 2.5 V
NC
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICA TIONS USING SEMICONDUCT OR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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