TEXAS INSTRUMENTS INA166 Technical data
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INA166
INA166
Low-Noise, Low-Distortion, G = 2000
INSTRUMENTATION AMPLIFIER
FEATURES
● LOW NOISE: 1.3nV/√Hz at 1kHz
● LOW THD+N: 0.09% at 1kHz
● WIDE BANDWIDTH: 450kHz
● WIDE SUPPLY RANGE: ±4.5V to ±18V
● HIGH CMR: > 100dB
● GAIN SET WITH EXTERNAL RESISTOR
● SO-14 SURFACE-MOUNT PACKAGE
DESCRIPTION
The INA166 is a very low-noise, low-distortion, monolithic instrumentation amplifier. Its current-feedback
circuitry achieves very wide bandwidth and excellent
dynamic response over a wide range of gain. It is ideal
for low-level signals such as microphones or hydrophones. Many industrial, instrumentation, and medical
applications also benefit from its low noise and wide
bandwidth.
4
–
V
IN
3
A1
3kΩ
APPLICATIONS
● MOVING-COIL TRANSDUCER AMPLIFIERS
● DIFFERENTIAL RECEIVERS
● BRIDGE TRANSDUCER AMPLIFIERS
● MICROPHONE AND HYDROPHONE
Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain.
The INA166 provides near-theoretical noise performance for 200Ω source impedance. Its differential
input, low noise, and low distortion provide superior
performance as a low-level signal amplifier.
The INA166 is available in a space-saving SO-14
surface-mount package, specified for operation over
the –40°C to +85°C temperature range.
1
V
O
1
6kΩ 60kΩ
PREAMPS
INA166
Sense
8
30.3Ω
3kΩ
12
5
+
V
IN
Copyright © 2000, Texas Instruments Incorporated SBOS178 Printed in U.S.A. December, 2000
A2
6kΩ 60kΩ
14 11 6
V
2
O
A3
V+ V–
9
Ref
10
G = 2000
V
O
SPECIFICATIONS: VS = ±5V
TA = +25°C and at rated supplies, VS = ±5V, RL = 2kΩ connected to ground, G = 2000, unless otherwise noted.
INA166UA
PARAMETER CONDITIONS MIN TYP MAX UNITS
GAIN
Gain Error ±0.3 ±1%
Gain Temp Drift Coefficient ±10 ppm/°C
Nonlinearity ±0.005 % of FS
INPUT REFERRED NOISE
Voltage Noise R
f
= 1kHz 1.3 nV/√Hz
O
f
= 100Hz 1.6 nV/√Hz
O
f
= 10Hz 2 nV/√Hz
O
Current Noise
f
= 1kHz 0.8 pA/√Hz
O
INPUT OFFSET VOLTAGE
Input Offset Voltage V
vs Temperature T
vs Power Supply V
S
INPUT VOLTAGE RANGE
Common-Mode Voltage Range V
Common-Mode Rejection V
CM
INPUT BIAS CURRENT
Initial Bias Current 2.5 12 µA
vs Temperature 15 nA/°C
Initial Offset Current 0.1 1 µA
vs Temperature 0.5 nA/°C
INPUT IMPEDANCE
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB 450 kHz
Slew Rate 15 V/µs
THD+Noise, f = 1kHz 0.09 %
Settling Time, 0.1% 5V Step 2.5 µs
0.01% 5V Step 3.5 µs
Overload Recovery 50% Overdrive 1 µs
OUTPUT
Voltage R
L
Load Capacitance Stability 1000 pF
Short-Circuit Current Continuous-to-Common ±60 mA
POWER SUPPLY
Rated Voltage ±5V
Voltage Range ±4.5 ±18 V
Current, Quiescent I
TEMPERATURE RANGE
Specification –40 +85 °C
Operating –40 +125 °C
Thermal Resistance,
θ
JA
= 0Ω
SOURCE
= V
CM
A
= ±4.5V to ±18V ±1 ±3 µV/V
V
= ±1V, R
= 0V ±50 ±250 µV
OUT
= T
to T
MIN
MAX
+
–
– V
= 0V (V+) – 4 (V+) – 3V
IN
IN
+
–
– V
= 0V (V–) + 4 (V–) + 3 V
IN
IN
= 0Ω 100 120 dB
SRC
±2.5 µV/°C
Differential 60 2MΩ pF
Common-Mode 60 2MΩ pF
= 2kΩ to Ground (V+) – 2 (V+) – 1.8 V
(V–) + 2 (V–) + 1.8 V
= 0mA ±10 ±12 mA
O
100 °C/W
2
INA166
SBOS178
PIN CONFIGURATION
Top View
1
V
1
O
2
NC
3
GS1
–
4
V
IN
+
5
V
IN
6
V–
7
NC
NC = No Internal Connection
SO-14
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
14
VO2
13
NC
12
GS2
11
V+
10
Ref
9
V
O
8
Sense
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
ABSOLUTE MAXIMUM RATINGS
Power Supply Voltage ....................................................................... ±18V
Signal Input Terminals, Voltage
Output Short-Circuit to Ground ............................................... Continuous
Operating Temperature .................................................. –55°C to +125°C
Storage Temperature ..................................................... –55°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s) ............................................... +300°C
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals
that can swing more than 0.5V beyond the supply rails should be current
limited to 10mA or less.
Current
(2)
.................. (V–) – 0.5V to (V+) + 0.5V
(2)
.................................................... 10mA
(1)
PACKAGE/ORDERING INFORMATION
PACKAGE
PRODUCT PACKAGE NUMBER MARKING NUMBER
DRAWING PACKAGE ORDERING TRANSPORT
INA166UA SO-14 Surface Mount 235 INA166UA INA166UA Rails
"" " "INA166UA/2K5 Tape and Reel
NOTE: (1) Models with a slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces
of “INA166UA/2K5” will get a single 2500-piece Tape and Reel.
(1)
MEDIA
INA166
SBOS178
3
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = ±5V, RL = 2kΩ, CL = 50pF, G = 2000, unless otherwise noted.
70
60
50
40
30
Gain (dB)
20
10
0
10k 100k 1M 10M
100
10
GAIN vs FREQUENCY
Frequency (Hz)
NOISE VOLTAGE (RTI) vs FREQUENCY
1
VO = 5Vrms
R
= 10kΩ
L
0.1
THD+N (%)
0.01
100 1k 10k 100k
10.0
1
THD+N vs FREQUENCY
Frequency (Hz)
CURRENT NOISE SPECTRAL DENSITY
Noise (RTI) (nV/√Hz)
1
10 100 1k 10k
Frequency (Hz)
140
120
100
80
60
40
Input Referred CMR (dB)
20
0
10 1M
CMR vs FREQUENCY
100 1k 10k 100k
Frequency (Hz)
Current Noise Density (pA/√Hz)
0.1
1 10 100 1k 10k
Frequency (Hz)
POWER-SUPPLY REJECTION
140
120
100
80
60
40
Power-Supply Rejection (dB)
20
0
11M10 100 1k 10k 100k
vs FREQUENCY
Frequency (Hz)
4
INA166
SBOS178
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