TEXAS INSTRUMENTS EGP30A Technical data

EGP30A - EGP30K

3.0 Ampere Glass Passivated High Efficiency Rectifiers

Features

• Glass passivated cavity-free junction

• High surge current capability

• Low leakage current

• Superfast recovery time for high efficiency

• Low forward voltage, high current capability

DO-201AD Glass case

COLOR BAND DENOTES CATHODE

EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers

July 2007

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

a

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

RθJA Thermal Resistance, Junction to Ambient 20 °C/W
RθJL Thermal Resistance, Junction to Lead 8.5 °C/W
TJ, T

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* T

Average Rectified Current
.375 " lead length @ TL = 55°C

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation
Derate above 25°C

Junction and Storage Temperature Range -65 ~ 150 °C

STG

= 25°C unless otherwise noted

a

3.0 A

125 A

6.25
50

W

mW°C

Device

Parameter

Peak Repetitive Reverse Voltage
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V
Maximum Reverse Current

@ rated V
T

Maximum Reverse Recovery Time
I

F = 0.5 A, IR = 1.0 A, Irr = 0.25 A

Maximum Forward Voltage @ 3.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance

V

R = 4.0 V, f = 1.0 MHz

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

R TA = 25°C

A = 125°C

30A 30B 30C 30D 30F 30G 30J 30K

50 100 150 200 300 400 600 800 V

5.0

100

50 75 nS

95 75 pF

Units

μA
μA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

EGP30A - EGP30K Rev. A

Typical Performance Characteristics

EGP30A - EGP30K 3.0 Ampere Glass Passivated High Efficiency Rectifiers

EGP30A - EGP30K Rev. A

2 www.fairchildsemi.com