TEXAS INSTRUMENTS EGP10A Technical data

EGP10A - EGP10K
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Features
• Superfast recovery time for high efficiency
• Low leakage current
• High surge current capability
DO-41 Glass case
COLOR BAND DENOTES CATHODE
EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers
July 2007
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
I
C
TJ, T
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
Average Rectified Current .375 " lead length @ TL = 75°C
Peak Forward Surge Current
8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method)
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 50 °C/W Junction and Storage Temperature Range -65 ~ 150 °C
STG
= 25°C unless otherwise noted
a
1.0 A
30 A
2.5 17
W
mW°C
Device
Parameter
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V Maximum RMS Voltage 35 70 105 140 210 280 420 560 V DC Reverse Voltage (Rated VR) 50 100 150 200 300 400 600 800 V Maximum Reverse Current
@ rated V T
A = 125°C
Maximum Reverse Recovery Time I
F = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 1.0 A 0.95 1.25 1.7 V Typical Junction Capacitance
V
R = 4.0 V, f = 1.0 MHz
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
R TA = 25°C
10A 10B 10C 10D 10F 10G 10J 10K
5.0
100
50 75 nS
22 15 pF
Units
μA μA
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
EGP10A - EGP10K Rev. A
Typical Performance Characteristics
EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers
EGP10A - EGP10K Rev. A
2 www.fairchildsemi.com
Reverse Recovery Time Characterstic and Test Circuit Diagram
EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers
EGP10A - EGP10K Rev. A
3 www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Form ative or In Design
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference infor­mation only.
Rev. I30
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