Texas Instruments DV2002TL2, BQ2002TSNTR, BQ2002TSN, BQ2002TPN, BQ2002DSNTR Datasheet

...
Features
Fast charge of nickel cadmium or nickel-metal hydride batter
-
ies
Direct LED output displays charge status
Internal band-gap voltage ref
-
erence
Optional top-off charge (bq2002T only)
Selectable pulse-trickle charge
rates (bq2002T only)
Low-power mode
8-pin 300-mil DIP or 150-mil
SOIC
General Description
The bq2002D/T Fast-Charge IC are low-cost CMOS battery-charge control
-
lers able to provide reliable charge ter
-
mination for both NiCd and NiMH bat
­tery applications. Controlling a current-limited or constant-current supply allows the bq2002D/T to be the basis for a cost-effective stand-alone or system-integrated charger. The bq2002D/T integrates fast charge with optional top-off and pulsed-trickle con
­trol in a single IC for charging one or more NiCd or NiMH battery cells.
Fast charge is initiated on application of the charging supply or battery re
­placement. For safety, fast charge is inhibited if the battery temperature and voltage are outside configured limits.
Fast charge is terminated by any of the following:
n
Rate of temperature rise
n
Maximum voltage
n
Maximum temperature
n
Maximum time
After fast charge, the bq2002T option
­ally tops-off and pulse-trickles the battery per the pre-configured limits. Fast charge may be inhibited using the INH pin. The bq2002D/T may be placed in low-standby-power mode to reduce system power consumption.
1
NiCd/NiMH Fast-Charge Management ICs
bq2002D/T
TM Timer mode select input
LED
Charging status output
BAT Battery voltage input
V
SS
System ground
1
PN-200201.eps
8-Pin DIP or
Narrow SOIC
2
3
4
8
7
6
5
TM
LED
BAT
V
SS
CC
INH
V
CC
TS
TS Temperature sense input
V
CC
Supply voltage input
INH Charge inhibit input
CC Charge control output
Pin Connections
Pin Names
bq2002D/T Selection Guide
Part No. TCO HTF LTF Fast Charge Time-Out Top-Off Maintenance
bq2002D
0.225 V
CC
0.25 V
CC
0.4 V
CC
C/4 320 min C/64 C/256
1C 80 min C/16 C/256 2C 40 min None C/128
bq2002T
0.225 V
CC
0.25 V
CC
None
C/4 440 min None None
1C 110 min None None 2C 55 min None None
SLUS133–JANUARY 2000 E
Pin Descriptions
TM
Timer mode input
A three-level input that controls the settings for the fast charge safety timer, voltage ter
­mination mode, top-off, pulse-trickle, and voltage hold-off time.
LED
Charging output status
Open-drain output that indicates the charging status.
BAT
Battery input voltage
The battery voltage sense input. The input to this pin is created by a high-impedance re
­sistor divider network connected between the positive and negative terminals of the battery.
V
SS
System ground
TS
Temperature sense input
Input for an external battery temperature monitoring thermistor.
V
CC
Supply voltage input
5.0V±20% power input.
INH
Charge inhibit input
When high, INH suspends the fast charge in progress. When returned low, the IC re
-
sumes operation at the point where initially suspended.
CC
Charge control output
An open-drain output used to control the charging current to the battery. CC switch
­ing to high impedance (Z) enables charging current to flow, and low to inhibit charging current. CC is modulated to provide top-off, if enabled, and pulse trickle.
Functional Description
Figures 2 and 3 show state diagrams of bq2002D/T and Figure 4 shows the block diagram of the bq2002D/T
Battery Voltage and Temperature Measurements
Battery voltage and temperature are monitored for maximum allowable values. The voltage presented on the battery sense input, BAT, should represent a single-cell potential for the battery under charge. A resistor-divider ratio of:
RB1 RB2
= N - 1
is recommended to maintain the battery voltage within the valid range, where N is the number of cells, RB1 is the resistor connected to the positive battery terminal, and RB2 is the resistor connected to the negative bat­tery terminal. See Figure 1.
2
bq2002D/T
F2002DT1.eps
bq2002D/T
BAT
V
SS
N T C
bq2002D/T
V
CC
V
CC
PACK +
T
S
V
SS
BAT pin connection Thermistor connection
TM
NTC = negative temperature coefficient thermistor.
RT1
RT2
R3
R4
RB1
RB2
Mid-level
setting for TM
Figure 1. Voltage and Temperature Monitoring and TM Pin Configuration
3
bq2002D/T
Chip on
V
CC
4.0V
Battery Voltage
too High?
Battery
Temperature?
Charge Pending
Fast Charge,
CC = Z
LED = Low
SD2002D.eps
V
BAT
< 2V
V
BAT
< 2V and
V
BAT
>
2V
Off,
CC = Low
LED = Low
Off,
CC = Low
LED = Z
V
BAT
> 2V
V
BAT
2V
V
TS
> 0.25V
V
CC
V
TS
> 0.25V
V
CC
V
TS
< 0.25V
V
CC
V
BAT
> 2V or
V
TS
< 0.25V
V
CC
or
Maximum Time Out
T/ t or
Figure 2. bq2002D State Diagram
Chip on
V
CC
4.0V
Battery Voltage
too High?
( T/
t or Maximum Time Out) and TM = High
Battery
Temperature?
Charge Pending
Fast
LED =
Low
Top-off
LED = Z
SD2002T.eps
V
BAT
< 2V
V
BAT
>
2V
0.25 VCC < VTS < 0.6 V
CC
Trickle LED =
Low
Trickle
LED = Z
V
BAT
> 2V or VTS < 0.225 VCC or Maximum Time Out
V
BAT
> 2V or VTS < 0.225 VCC or (( T/ t or Maximum Time Out) and TM = High)
V
BAT
< 2V and VTS < 0.6 VCC and VTS > 0.25 V
CC
V
BAT
> 2V
V
BAT
2V
VTS > 0.6 VCC or VTS < 0.25 V
CC
Figure 3. bq2002T State Diagram
Note: This resistor-divider network input impedance to end-to-end should be at least 200kand less than 1 MΩ.
A ground-referenced negative temperature coefficient ther
­mistor placed in proximity to the battery may be used as a low-cost temperature-to-voltage transducer. The tempera
­ture sense voltage input at TS is developed using a resistor-thermistor network between V
CC
and VSS. See
Figure 1.
Starting A Charge Cycle
Either of two events starts a charge cycle (see Figure 5):
1. Application of power to V
CC
or
2. Voltage at the BAT pin falling through the maximum cell voltage where:
V
MCV
= 2V ±5%.
If the battery is within the configured temperature and voltage limits, the IC begins fast charge. The valid bat
­tery voltage range is V
BAT<VMCV
. The valid tempera
­ture range is V
HTF<VTS<VLTF
for the bq2002T and
V
HTF<VTS
for the bq2002D where:
V
LTF
= 0.4 VCC±5%.
V
HTF
= 0.25 VCC±5% (bq2002T only).
If the battery voltage or temperature is outside of these limits, the IC pulse-trickle charges until the tempera­ture falls within the allowed fast charge range or a new charge cycle is started.
Fast charge continues until termination by one or more of the four possible termination conditions:
n
Rate of temperature rise
n
Maximum voltage
n
Maximum temperature
n
Maximum time
T/t Termination
The bq2002D/T samples at the voltage at the TS pin ev
­ery 19s and compares it to the value measured three samples earlier. If the voltage has fallen 25.6mV or more, fast charge is terminated. The T/t termination test is valid only when V
TCO<VTS<VLTF
for the
bq2002T and V
TCO<VTS
for the bq2002D.
Temperature Sampling
A sample is taken by averaging together 16 measure
­ments taken 57µs apart. The resulting sample period (18.18ms) filters out harmonics around 55Hz. This tech
-
4
bq2002D/T
OSC
TM
CC
LED
V
CC
V
SS
BAT
INH
Clock
Phase
Generator
Timing
Control
Sample
History
A to D
Converter
MCV
Check
Power
Down
TS
Bd2002TD.eps
Voltage
Reference
Power-On
Reset
TCO
Check
HTF/
LTF
Check
Charge-Control
State Machine
T/ t
ALU
Figure 4. Block Diagram
nique minimizes the effect of any AC line ripple that may feed through the power supply from either 50Hz or 60Hz AC sources. Tolerance on all timing is ±20%.
Maximum Voltage, Temperature, and Time
Any time the voltage on the BAT pin exceeds the maxi­mum cell voltage, V
MCV
, fast charge or optional top-off
charge is terminated.
Maximum temperature termination occurs anytime the voltage on the TS pin falls below the temperature cut-off threshold V
TCO
where:
V
TCO
= 0.225 VCC±5%
Maximum charge time is configured using the TM pin. Time settings are available for corresponding charge rates of C/4, 1C, and 2C. Maximum time-out termina­tion is enforced on the fast-charge phase, then reset, and
5
bq2002D/T
Corresponding
Fast-Charge Rate TM
Typical Fast-Charge
and Top-Off Time Limits
(minutes)
Top-Off
Rate
Pulse-
Trickle Rate
Pulse-
Trickle
Period (ms)
bq2002D
C/4 Mid 440 NA NA NA
1C Low 110 NA NA NA
2C High 55 NA NA NA
bq2002T
C/4 Mid 320 C/64 C/256 18.3
1C Low 80 C/16 C/256 73.1
2C High 40 Disabled C/128 73.1
Notes: Typical conditions = 25°C, VCC= 5.0V.
Mid = 0.5*V
CC
±0.5V
Tolerance on all timing is ±20%
Table 1. Fast-Charge Safety Time/Top-Off Table
TD2002F1.eps
Fast ChargingVCC = 0
Fast Charging
CC Output
LED
s
s
Charge initiated by application of power
Charge initiated by battery replacement
Pulse-Trickle
Top-Off
(optional,
bq2002T only)
(optional,
bq2002T only)
286
See
Table 1
s
286
4576
Figure 5. Charge Cycle Phases
enforced again on the top-off phase, if selected (bq2002T only). There is no time limit on the trickle-charge phase.
Top-off Charge—bq2002T Only
An optional top-off charge phase may be selected to follow fast charge termination for 1C and C/4 rates. This phase may be necessary on NiMH or other bat
­tery chemistries that have a tendency to terminate charge prior to reaching full capacity. With top-off en
­abled, charging continues at a reduced rate after fast-charge termination for a period of time selected by the TM pin. (See Table 1.) During top-off, the CC pin is modulated at a duty cycle of 286µs active for every 4290µs inactive. This modulation results in an average rate 1/16th that of the fast charge rate. Maxi
­mum voltage, time, and temperature are the only ter
­mination methods enabled during top-off.
Pulse-Trickle Charge—bq2002T Only
Pulse-trickle is used to compensate for self-discharge while the battery is idle in the charger. The battery is pulse-trickle charged by driving the CC pin active for a period of 286µs for every 72.9ms of inactivity for 1C and 2C selections, and 286µs for every 17.9ms of inactivity for C/4 selection. This results in a trickle rate of C/256 for the top-off enabled mode and C/128 otherwise.
TM Pin
The TM pin is a three-level pin used to select the charge timer, top-off, voltage termination mode, trickle rate, and voltage hold-off period options. Table 1 de
­scribes the states selected by the TM pin. The mid­level selection input is developed by a resistor di
­vider between V
CC
and ground that fixes the voltage
on TM at V
CC
/2 ± 0.5V. See Figure 5.
Charge Status Indication
In the fast charge and charge pending states, and when
-
ever the inhibit pin is active, the LED
pin goes low. The
LED
pin is driven to the high-Z state for all other condi
-
tions. Figure 3 outlines the state of the LED
pin during
charge.
Charge Inhibit
Fast charge and top-off may be inhibited by using the INH pin. When high, INH suspends all fast charge and top-off activity and the internal charge timer. INH freezes the current state of LED
until inhibit is re
­moved. Temperature monitoring is not affected by the INH pin. During charge inhibit, the bq2002D/T contin
­ues to pulse-trickle charge the battery per the TM selec
­tion. When INH returns low, charge control and the charge timer resume from the point where INH became active. The V
TS
sample history is cleared by INH.
Low-Power Mode
The IC enters a low-power state when V
BAT
is driven
above the power-down threshold (V
PD
) where:
V
PD
= VCC- (1V ±0.5V)
Both the CC pin and the LED
pin are driven to the high-Z state. The operating current is reduced to less than 1µA in this mode. When V
BAT
returns to a value
below V
PD
, the IC pulse-trickle charges until the next
new charge cycle begins.
6
bq2002D/T
7
bq2002D/T
Absolute Maximum Ratings
Symbol Parameter Minimum Maximum Unit Notes
V
CC
VCCrelative to V
SS
-0.3 +7.0 V
V
T
DC voltage applied on any pin excluding V
CC
relative to V
SS
-0.3 +7.0 V
T
OPR
Operating ambient temperature 0 +70 °C Commercial
T
STG
Storage temperature -40 +85 °C
T
SOLDER
Soldering temperature - +260 °C 10 sec max.
T
BIAS
Temperature under bias -40 +85 °C
Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera
-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo
-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Thresholds (T
A
= 0 to 70°C; V
CC
±
20%)
Symbol Parameter Rating Tolerance Unit Notes
V
TCO
Temperature cutoff
0.225*V
CC
±5%
V
V
TS
V
TCO
terminates fast charge
and top-off
V
HTF
High-temperature fault
0.25 V
CC
±5%
V
VTS≤ V
HTF
inhibits fast charge start
V
LTF
Low-temperature fault
0.4 V
CC
±5%
V
V
TS
V
LTF
inhibits fast charge start
(bq2002T only)
V
MCV
Maximum cell voltage 2 ±5% V
V
BAT
V
MCV
inhibits/terminates fast
charge
8
bq2002D/T
Recommended DC Operating Conditions (T
A
= 0 to 70°C)
Symbol Condition Minimum Typical Maximum Unit Notes
V
CC
Supply voltage 4.0 5.0 6.0 V
V
BAT
Battery input 0 - V
CC
V
V
TS
Thermistor input 0.5 - V
CC
VVTS< 0.5V prohibited
V
IH
Logic input high 0.5 - - V INH
Logic input high V
CC
- 0.5 - - V TM
V
IM
Logic input mid
V
CC
2
- 0.5
-
V
CC
2
05+ .
VTM
V
IL
Logic input low - - 0.1 V INH
Logic input low - - 0.5 V TM
V
OL
Logic output low - - 0.8 V LED,CC,IOL= 10mA
V
PD
Power down
V
CC
- 1.5
-
VCC- 0.5
V
V
BAT
V
PD
max. powers down bq2002D/T; V
BAT
< VPDmin. =
normal operation.
I
CC
Supply current - - 500
µ
A
Outputs unloaded, V
CC
= 5.1V
I
SB
Standby current - - 1
µ
AVCC= 5.1V, V
BAT
= V
PD
I
OL
LED, CC sink 10 - - mA @VOL= VSS+ 0.8V
I
L
Input leakage - -
±
1
µ
A INH, CC, V = VSSto V
CC
I
OZ
Output leakage in high-Z state
-5 - -
µ
A
LED
,CC
Note: All voltages relative to VSS.
9
Impedance
Symbol Parameter Minimum Typical Maximum Unit
R
BAT
Battery input impedance 50 - - M
R
TS
TS input impedance 50 - - M
Timing (T
A
= 0 to +70°C; V
CC
±
10%)
Symbol Parameter Minimum Typical Maximum Unit Notes
d
FCV
Time-base variation -20 - 20 %
Note: Typical is at TA= 25°C, VCC= 5.0V.
bq2002D/T
10
D
E1
E
C
e
L
G
B
A
A1
B1
S
8-Pin DIP(PN
)
8-Pin PN(0.300" DIP
)
Dimension
Inches Millimeters
Min. Max. Min. Max.
A 0.160 0.180 4.06 4.57
A1 0.015 0.040 0.38 1.02
B 0.015 0.022 0.38 0.56
B1 0.055 0.065 1.40 1.65
C 0.008 0.013 0.20 0.33
D 0.350 0.380 8.89 9.65
E 0.300 0.325 7.62 8.26
E1 0.230 0.280 5.84 7.11
e 0.300 0.370 7.62 9.40
G 0.090 0.110 2.29 2.79
L 0.115 0.150 2.92 3.81
S 0.020 0.040 0.51 1.02
bq2002D/T
8-Pin SOIC Narrow (SN)
8-Pin SN(0.150" SOIC
)
Dimension
Inches Millimeters
Min. Max. Min. Max.
A 0.060 0.070 1.52 1.78
A1 0.004 0.010 0.10 0.25
B 0.013 0.020 0.33 0.51
C 0.007 0.010 0.18 0.25
D 0.185 0.200 4.70 5.08
E 0.150 0.160 3.81 4.06
e 0.045 0.055 1.14 1.40
H 0.225 0.245 5.72 6.22
L 0.015 0.035 0.38 0.89
11
bq2002D/T
Data Sheet Revision History
Change No. Page No. Description Nature of Change
13
Was: Table 1 gave the bq2002D/T Operational Summary. Is: Figure 2 gives the bq2002D/T Operational Summary.
Changed table to figure.
1 5 Added top-off values. Added column and values.
2 All Revised and expanded this data sheet
3 All Revised and included bq2002D Addition of device
4 Specified package information for the bq2002D
Notes: Change 1 = Sept. 1996 B changes from Aug. 1994.
Change 2 = Aug. 1997 C changes from Sept. 1996 B.
Change 3 = Jan. 1999 D changes from Aug. 1997 C.
Change 4 = Jan. 2000 E changes from Jan. 1999 D.
bq2002
Package Option:
PN = 8-pin plastic DIP SN = 8-pin narrow SOIC*
Device:
D = bq2002D Fast-Charge IC T = bq2002T Fast-Charge IC
Ordering Information
* bq2002D is only available in the 8-pin narrow SOIC package
12
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accor
­dance with TIs standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, ex
­cept those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (CRITICAL APPLICATIONS). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMERS RISK.
In order to minimize risks associated with the customers applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellec
­tual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TIs publication of information regarding any third partys products or ser
­vices does not constitute TIs approval, warranty or endorsement thereof.
Copyright © 2000, Texas Instruments Incorporated
Loading...