Texas Instruments CD74HCT40105M96, CD74HCT40105M, CD74HCT40105E, CD74HC40105M, CD74HC40105E Datasheet

CD74HC40105,

[ /Title
(CD74
HC401
05,
CD74
HCT40

105)
/Sub­ject
(High
Speed
CMOS

Data sheet acquired from Harris Semiconductor
SCHS222

February 1998

Features

• Independent Asynchronous Inputs and Outputs

• Expandable in Either Direction

• Reset Capability

• Status Indicators on Inputs and Outputs

• Three-State Outputs

• Shift-Out Independent of Three-State Control

• Fanout (Over Temperature Range)

- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads

- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads

• Wide Operating Temperature Range . . . -55

• Balanced Propagation Delay and Transition Times

• Significant Power Reduction Compared to LSTTL
Logic ICs

• HC Types

- 2V to 6V Operation

- High Noise Immunity: N

at VCC = 5V

• HCT Types

- 4.5V to 5.5V Operation

- Direct LSTTL Input Logic Compatibility,

V

= 0.8V (Max), VIH = 2V (Min)

IL

- CMOS Input Compatibility, I

= 30%, NIH = 30% of V

IL

≤ 1µA at VOL, V

l

o

Applications

• Bit-Rate Smoothing

• CPU/Terminal Buffering

• Data Communications

• Peripheral Buffering

• Line Printer Input Buffers

• Auto-Dialers

• CRT Buffer Memories

• Radar Data Acquisition

C to 125oC

CC

OH

CD74HCT40105

High Speed CMOS Logic

4-Bit x 16-Word FIFO Register

Description

The Harris CD74HC40105 and CD74HCT40105 are high­speed silicon-gate CMOS devices that are compatible,
except for “shift-out” circuitry, with the Harris CD40105B.
They are low-power first-in-out (FIFO) “elastic” storage
registers that can store 16 four-bit words. The 40105 is
capable ofhandling input and outputdata at different shifting
rates. This feature makes particularly useful as a buffer
between asynchronous systems.

Each work position in the register is clocked by a control flip­flop, which stores a marker bit. A “1” signifies that the posi­tion’s data is filled and a “0” denotes a vacancy in that posi­tion. The control flip-flop detects the state of the preceding
flip-flop and communicates its own status to the succeeding
flip-flop. When a control flip-flop is in the “0” state and sees a
“1” in the preceeding flip-flop, it generates a clock pulse that
transfers data from the preceding four data latches into its
own four data latches and resets the preceding flip-flop to
“0”. The first and last control flip-flops have buffered outputs.
Since all empty locations “bubble” automatically to the input
end, and all valid data ripple through to the output end, the
status of the first control flip-flop (DATA-IN READY) indicates
if the FIFO is full, and the status of the last flip-flop (DATA­OUT READY) indicates if the FIFO contains data. As the
earliest data are removed from the bottom of the data stack
(the output end), all data entered later will automatically
propagate (ripple) toward the output.

Ordering Information

TEMP. RANGE

PART NUMBER

CD74HC40105E -55 to 125 16 Ld PDIP E16.3
CD74HCT40105E -55 to 125 16 Ld PDIP E16.3
CD74HC40105M -55 to 125 16 Ld SOIC M16.15
CD74HCT40105M -55 to 125 16 Ld SOIC M16.15

NOTES:

1. When ordering,use the entire partnumber. Add the suffix 96 to
obtain the variant in the tape and reel.

2. Wafer and die for this part number is available which meets all
electrical specifications. Please contact your local sales office or
Harris customer service for ordering information.

(oC) PACKAGE PKG. NO.

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright

© Harris Corporation 1998

1

File Number 1834.1

CD74HC40105, CD74HCT40105

Pinout

CD74HC40105, CD74HCT40105

(PDIP, SOIC)

TOP VIEW

THREE-STATE

CONTROL

DIR

D0
D1
D2
D3

GND

1
2
3

SI

4
5
6
7
8

Loading Data

Data can be entered whenever the DATA-IN READY (DIR)
flag is high, by a low to high transition on the SHIFT-IN (SI)
input. This input must go low momentarily before the next
word is accepted by the FIFO. The DIR flag will go low
momentarily, until the data have been transferred to the sec­ond location. The flag will remain low when all 16-word loca­tions are filled with valid data, and further pulses on the SI
input will be ignored until DIR goes high.

Unloading Data

As soon as the first word has rippled to the output, the data­out ready output (DOR) goes HIGH and data of the first word
is available on the outputs. Data of other words can be
removed by a negative-going transition on the shift-out input
(

SO). This negative-going transition causes the DOR signal
to go LOW while the next word moves to the output. As long
as valid data is available in the FIFO, the DOR signal will go
high again, signifying that the next word is ready at the
output. When the FIFO is empty, DOR will remain LOW, and
any further commands will be ignored until a “1” marker
ripples down to the last control register and DOR goes
HIGH. If during unloading SI is HIGH, (FIFO is full) data on
the data input of the FIFO is entered in the first location.

V

16

CC

15

SO

14

DOR

13

Q0

12

Q1
Q2

11
10

Q3
MR

9

Three-State Outputs

In order to facilitate data busing, three-state outputs (Q0 to
Q3) are provided on the data output lines, while the load
condition of the register can be detected by the state of the
DOR output. A HIGH on the three-state control flag (output
enable input OE) forces the outputs into the high-impedance
OFF-state mode. Note that the shift-out signal, unlike that in
the Harris CD40105B, is independent of the three-state
output control. In the CD40105B, the three-state control
must not be shifted from High to Low when the shift-out
signal is Low (data loss would occur). In the high-speed
CMOS version this restriction has been eliminated.

Cascading

The 40105 can be cascaded to form longer registers simply
by connecting the DIR to SO and DOR to SI. In the cascaded
mode, a MASTER RESET pulse must be applied after the
supply voltage is turnedon. For words wider than four bits, the
DIR and the DOR outputs must be gated together with AND
gates. Theri outputs drive the SI and SO inputs in parallel, if
expanding is done in both directions (see Figures 12 and 13).

Functional Diagram

THREE-

STATE

CONTROL

D0
D1
D2

D3

SHIFT IN

SHIFT OUT

MASTER

RESET

4
5
6
7

3

15

1

9

GND = 8
V

= 16

CC

13

Q0

12

Q1

11

Q2

10

Q3

14

DATA-OUT
READY

2

DATA-IN
READY

Master Reset

A high on the MASTER RESET (MR) sets all the control
logic marker bits to “0”. DOR goes low and DIR goes high.
The contents of the data register are not changed, only
declared invalid, and will be superseded when the first word
is loaded. Thus, MR does not clear data within the register
but only the control logic. If the shift-in flag (SI) is HIGH
during the master reset pulse, data present at the input (D0
to D3) are immediately moved into the first location upon
completion of the reset process.

2

CD74HC40105, CD74HCT40105

INPUT

BUFFERS

4

D0

5

D1

6

D2

7

D3

DATA-IN READY (DIR)

2 CONTROL LOGIC

3 15

SHIFT IN (SI)

FIGURE 1. FUNCTIONAL BLOCK DIAGRAM

4 x 16

DAT A

REGISTER

9

MASTER

RESET

(MR)

OUTPUT

BUFFERS

13

Q0

12

Q1

11

Q2

10

Q3

1

THREE-STATE CONTROL
DATA-OUT READY (DOR)

14

SHIFT OUT (

SO)

3

MR

DIR

D0

D1

D2

D3

CD74HC40105, CD74HCT40105

9

14

3

SI

F/Fs

R Q

†

QS

2

4

CL CL

5

4

6

7

LATCHES

L1

POSITION 1

F/F1
R Q

† †

QS

14 x

CL CL

4 x 14

LATCHES

14 x L1

POSITION 2-15 POSITIONS 16

2-15

R Q

† †

QS

14 x

CL CL

4

LATCHES

L16

F/F16

R Q

† †

QS

THREE-

OUTPUT

BUFFERS

E

STATE

DOR

15

S0

R

†

QS

13

Q0

12

Q1

11

Q2

10

E

Q3

† “S” overrides “R”.
†† “R” overrides “S”.

1

OE

FIGURE 2. LOGIC DIAGRAM

4

CD74HC40105, CD74HCT40105

Absolute Maximum Ratings Thermal Information

DC Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V

DC Input Diode Current, I

IK

For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA

DC Output Diode Current, I

OK

For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA

DC Output Source or Sink Current per Output Pin, I

O

For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA

DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA

Operating Conditions

Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

Supply Voltage Range, V

HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V

HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V

DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to V

Input Rise and Fall Time

2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)

4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)

6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

3. θJA is measured with the component mounted on an evaluation PC board in free air.

CC

Thermal Resistance (Typical, Note 3) θJA (oC/W)

PDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90

SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC

Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

CC

DC Electrical Specifications

PARAMETER SYMBOL

HC TYPES

High Level Input
Voltage

Low Level Input
Voltage

High Level Output
Voltage
CMOS Loads

High Level Output
Voltage
TTL Loads

Low Level Output
Voltage
CMOS Loads

Low Level Output
Voltage
TTL Loads

Input Leakage
Current

Quiescent Device
Current

V

IH

V

IL

V

OH

V

OL

I

I

I

CC

TEST

CONDITIONS

(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX

I

V

CC

(V)

o

C -40oC TO 85oC -55oCTO125oC

25

UNITSV

- - 2 1.5 - - 1.5 - 1.5 - V

4.5 3.15 - - 3.15 - 3.15 - V
6 4.2 - - 4.2 - 4.2 - V

- - 2 - - 0.5 - 0.5 - 0.5 V

4.5 - - 1.35 - 1.35 - 1.35 V
6 - - 1.8 - 1.8 - 1.8 V

VIHor VIL-0.02 2 1.9 - - 1.9 - 1.9 - V

-0.02 4.5 4.4 - - 4.4 - 4.4 - V

-0.02 6 5.9 - - 5.9 - 5.9 - V

- - ---- - - - V

-4 4.5 3.98 - - 3.84 - 3.7 - V

-5.2 6 5.48 - - 5.34 - 5.2 - V

VIHor VIL0.02 2 - - 0.1 - 0.1 - 0.1 V

0.02 4.5 - - 0.1 - 0.1 - 0.1 V

0.02 6 - - 0.1 - 0.1 - 0.1 V

- - ---- - - - V
4 4.5 - - 0.26 - 0.33 - 0.4 V

5.2 6 - - 0.26 - 0.33 - 0.4 V

VCC or

-6--±0.1 - ±1-±1µA

GND

VCC or

0 6 - - 8 - 80 - 160 µA

GND

5