Texas Instruments CD74HCT640M, CD74HCT640E, CD74HC640M, CD74HC640E, CD54HCT640F3A Datasheet

...
CD74HC640,
/ j
[ /Title (CD74 HC640 , CD74 HCT64
0) Sub­ect
(High Speed CMOS
Data sheet acquired from Harris Semiconductor SCHS192
January 1998
Features
• Buffered Inputs
• Three-State Outputs
• Applications in Multiple-Data-Bus Architecture
• Fanout (Over Temperature Range)
• Wide Operating Temperature Range . . . -55
o
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL Logic ICs
• HC Types
- 2V to 6V Operation
- High Noise Immunity: N
= 30%, NIH = 30% of V
IL
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V
= 0.8V (Max), VIH = 2V (Min)
IL
- CMOS Input Compatibility, I
1µA at VOL, V
l
Pinout
CD74HC640, CD74HCT640
CD74HCT640
High Speed CMOS Logic
Octal Three-State Bus Transceiver, Inverting
(PDIP, SOIC)
TOP VIEW
C to 125oC
CC
OH
1
DIR
A0
2
A1
3
A2
4
A3
5
A4
6
A5
7 8
A6
9
A7
GND
10
Description
The Harris CD74HC640 and CD74HCT640 silicon-gate CMOS three-state bidirectional inverting and non-inverting buffers are intended for two-way asynchronous communication between data buses. They have high drive current outputs which enable high-speed operation when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuits, and have speeds comparable to low power Sckottky TTL circuits. They can drive 15 LSTTL loads. The CD74HC640 and CD74HCT640 are inverting buffers.
V
20
CC
OE
19
B0
18
B1
17
B2
16
B3
15
B4
14
B5
13 12
B6 B7
11
Functional Diagram
A0
A1
THRU
A6
A7
OE
DIR
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright
© Harris Corporation 1998
OUTPUT ENABLE AND
DIRECTION-SELECT LOGIC
1
B0
B1
THRU
B6
B7
VCC = 20
GND = 10
File Number 1677.1
CD74HC640, CD74HCT640CD74HC640, CD74HCT640
TRUTH TABLE
CONTROL INPUTS DATA PORT STATUS OE DIR A
LLOI HHZZ HLZZ LHIO
To prevent excess currents in the High-Z modes all I/O terminals should be terminated with 1k to 1M resistors. H = High Level L = Low Level I = Input O = Output (Inversion of Input Level) Z = High Impedance
n
B
n
2
CD74HC640, CD74HCT640CD74HC640, CD74HCT640
Absolute Maximum Ratings Thermal Information
DC Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, I
IK
For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, I
OK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, I
O
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC Output Source or Sink Current per Output Pin, I
O
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, V
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to V
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
7. θJA is measured with the component mounted on an evaluation PC board in free air.
CC
Thermal Resistance (Typical, Note 2) θJA (oC/W)
PDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
CC
DC Electrical Specifications
PARAMETER SYMBOL
HC TYPES
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage CMOS Loads
High Level Output Voltage TTL Loads
Low Level Output Voltage CMOS Loads
Low Level Output Voltage TTL Loads
Input Leakage Current
V
IH
V
IL
V
OH
V
OL
I
I
TEST
CONDITIONS
(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX
I
V
CC
(V)
o
C -40oC TO 85oC -55oCTO125oC
25
UNITSV
- - 2 1.5 - - 1.5 - 1.5 - V
4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V
- - 2 - - 0.5 - 0.5 - 0.5 V
4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V
VIHor VIL-0.02 2 1.9 - - 1.9 - 1.9 - V
-0.02 4.5 4.4 - - 4.4 - 4.4 - V
-0.02 6 5.9 - - 5.9 - 5.9 - V
- - ---- - - - V
-6 4.5 3.98 - - 3.84 - 3.7 - V
-7.8 6 5.48 - - 5.34 - 5.2 - V
VIHor VIL0.02 2 - - 0.1 - 0.1 - 0.1 V
0.02 4.5 - - 0.1 - 0.1 - 0.1 V
0.02 6 - - 0.1 - 0.1 - 0.1 V
- - ---- - - - V 6 4.5 - - 0.26 - 0.33 - 0.4 V
7.8 6 - - 0.26 - 0.33 - 0.4 V
VCC or
-6--±0.1 - ±1-±1µA
GND
3
CD74HC640, CD74HCT640CD74HC640, CD74HCT640
DC Electrical Specifications (Continued)
TEST
CONDITIONS
PARAMETER SYMBOL
Quiescent Device
I
CC
Current Three-State Leakage
Current
I
OZ
HCT TYPES
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
V
IH
V
IL
V
OH
CMOS Loads High Level Output
Voltage TTL Loads
Low Level Output Voltage
V
OL
CMOS Loads Low Level Output
Voltage TTL Loads
Input Leakage Current
Quiescent Device Current
Three-State Leakage Current
Additional Quiescent Device Current Per
I
I
I
CC
I
OZ
I
CC
Input Pin: 1 Unit Load
NOTE: For dual-supply systems theoretical worst case (V
(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX
I
VCC or
0 6 - - 8 - 80 - 160 µA
GND
VILor VIHVO =
VCC or
GND
- - 4.5 to
- - 4.5 to
VIHor VIL-0.02 4.5 4.4 - - 4.4 - 4.4 - V
-6 4.5 3.98 - - 3.84 - 3.7 - V
VIHor VIL0.02 4.5 - - 0.1 - 0.1 - 0.1 V
6 4.5 - - 0.26 - 0.33 - 0.4 V
VCCand
0 5.5 - - ±0.1 - ±1-±1µA
GND
VCC or
0 5.5 - - 8 - 80 - 160 µA
GND
VILor VIHVO =
VCC or
GND
V
CC
- 4.5 to
-2.1
o
C -40oC TO 85oC -55oCTO125oC
V
CC
25
(V)
6--±0.5 - ±5-±10 µA
2--2- 2 - V
5.5
- - 0.8 - 0.8 - 0.8 V
5.5
5.5 - - ±0.5 - ±5-±10 µA
- 100 360 - 450 - 490 µA
5.5
= 2.4V, VCC = 5.5V) specification is 1.8mA.
I
UNITSV
HCT Input Loading Table
INPUT UNIT LOADS
DIR 0.9
OE, A 1.5
B 1.5
NOTE: UnitLoad is ICClimit specified in DC Electrical Table, e.g., 360µA max at 25oC.
4
CD74HC640, CD74HCT640CD74HC640, CD74HCT640
Switching Specifications C
PARAMETER SYMBOL
HC TYPES
Propagation Delay t
A to
B
B to A
Output High-Z To High Level, To Low Level
Output High Level Output Low Level to High Z
Output Transition Time t
Input Capacitance C Three-State Output
Capacitance Power Dissipation Capacitance
(Notes 4, 5)
HCT TYPES
Propagation Delay
A to
B
B to A
Output High-Z To High Level, To Low Level
Output High Level Output Low Level to High Z
Output Transition Time t Input Capacitance C Three-State Output
Capacitance Power Dissipation Capacitance
(Notes 4, 5)
NOTES:
8. C
is used to determine the dynamic power consumption, per channel.
PD
9. PD = V
2
fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage.
CC
PHL
t
PHL, tPLHCL
t
PHZ, tPLZ
THL
t
PHL, tPLHCL
t
PHL, tPLHCL
t
PHZ, tPLZ
THL
= 50pF, Input tr, tf= 6ns
L
TEST
CONDITIONS VCC(V)
, t
PLHCL
= 50pF
C
= 15pF 5 - 7 - - - - - ns
L
C
= 50pF 6 - - 15 - 20 - 23 ns
L
= 50pF 2 - - 150 - 190 - 225 ns
C
= 15pF 5 - 12 - - - - - ns
L
C
= 50pF 6 - - 26 - 33 - 38 ns
L
CL = 50pF 2 - - 150 - 190 - 225 ns
C
= 15pF 5 - 12 - - - - - ns
L
C
= 50pF 6 - - 26 - 33 - 38 ns
L
, t
IN
C
O
C
PD
CL = 50pF 2 - - 60 - 75 - 90 ns
TLH
CL = 50pF - 10 - 10 - 10 - 10 pF
- - - - 20 - 20 - 20 pF
- 5 -38- - - - - pF
= 50pF 4.5 - - 22 - 28 - 33 ns
C
= 15pF 5 - 9 - - - - - ns
L
= 50pF 4.5 - - 30 - 38 - 45 ns
C
= 15pF 5 - 12 - - - - - ns
L
CL = 50pF 4.5 - - 30 - 38 - 45 ns C
= 15pF 5 - 12 - - - - - ns
L
, t
IN
C
O
C
PD
CL = 50pF 4.5 - - 12 - 15 - 18 ns
TLH
CL = 50pF - 10 - 10 - 10 - 10 pF
- - - - 20 - 20 - 20 pF
- 5 -41- - - - - pF
25
o
C
-40oC TO 85oC
-55oC TO 125oC
UNITSMIN TYP MAX MIN MAX MIN MAX
2 - - 90 - 115 - 135 ns
4.5 - - 18 - 23 - 27 ns
4.5 - - 30 - 38 - 45 ns
4.5 - - 30 - 38 - 45 ns
4.5 - - 12 - 15 - 18 ns 6 - - 10 - 13 - 15 ns
5
Test Circuits and Waveforms
tr = 6ns tf = 6ns
INPUT
90% 50% 10%
CD74HC640, CD74HCT640CD74HC640, CD74HCT640
tr = 6ns
V
CC
GND
INPUT
2.7V
1.3V
0.3V
= 6ns
t
f
3V
GND
t
INVERTING
OUTPUT
THL
t
PHL
t
PLH
50%
10%
90%
t
TLH
FIGURE 7. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
6ns 6ns
OUTPUT
DISABLE
OUTPUT LOW
TO OFF
OUTPUT HIGH
TO OFF
50%
t
t
OUTPUTS ENABLED
PLZ
PHZ
10%
90%
90%
10%
t
PZL
t
PZH
OUTPUTS
DISABLED
50%
50%
FIGURE 9. HC THREE-STATE PROPAGATION DELAY
WAVEFORM
V
CC
GND
OUTPUTS ENABLED
t
INVERTING
OUTPUT
THL
t
PHL
t
PLH
1.3V
10%
90%
t
TLH
FIGURE 8. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
0.3
t
t
PZH
6ns
PZL
1.3V
1.3V OUTPUTS
ENABLED
t
r
OUTPUT
DISABLE
OUTPUT LOW
TO OFF
OUTPUT HIGH
TO OFF
t
t
OUTPUTS ENABLED
6ns t
PLZ
PHZ
f
10%
90%
2.7
1.3
OUTPUTS
DISABLED
FIGURE 10. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
3V
GND
NOTE: Open drain waveforms t VCC, CL = 50pF.
FIGURE 11. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
TIED HIGH
and t
PLZ
OTHER
INPUTS
OR LOW
OUTPUT
DISABLE
PZL
IC WITH
THREE-
STATE
OUTPUT
OUTPUT
= 1k
R
L
C
L
50pF
VCC FOR t GND FOR t
PLZ
PHZ
AND t
AND t
PZL
PZH
are the same as those for three-state shown on the left. The test circuit is Output RL=1kΩto
6
7
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