• Significant Power Reduction Compared to LSTTL
Logic ICs
• HC Types
- 2V to 6V Operation
- High Noise Immunity: N
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V
= 0.8V (Max), VIH = 2V (Min)
IL
- CMOS Input Compatibility, I
• Related Literature
- CD54HC32F3A and CD54HCT32F3A Military
Data Sheet, Document Number 3765
= 30%, NIH = 30% of V
IL
≤ 1µA at VOL, V
l
o
C to 125oC
CC
OH
CD74HCT32
High Speed CMOS Logic
Quad 2-Input OR Gate
Description
The Harris CD74HC32, CD74HCT32 contain four 2-input OR
gates in one package. Logic gates utilize silicon gate CMOS
technology to achieve operating speeds similar to LSTTL
gates with the low power consumption of standard CMOS
integrated circuits. All devices have the ability to drive 10
LSTTL loads. The 74HCT logic family is functionally pin
compatible with the standard 74LS logic family.
Ordering Information
TEMP.RANGE
PART NUMBER
CD74HC32E-55 to 12514 Ld PDIPE14.3
CD74HCT32E-55 to 12514 Ld PDIPE14.3
CD74HC32M-55 to 12514 Ld SOICM14.15
CD74HCT32M-55 to 12514 Ld SOICM14.15
CD54HCT32F-55 to 12514 Ld CERDIPF14.3
CD54HC32W-55 to 125Wafer
NOTES:
1. When ordering, use the entire part number.Add the suffix 96 to
obtain the variant in the tape and reel.
2. Die for this part number is available which meets all electrical
specifications. Please contact your local sales office or Harris
customer service for ordering information.
(oC)PACKAGE
PKG.
NO.
Pinout
CD54HCT32, CD74HC32, CD74HCT32
(PDIP, CERDIP, SOIC)
TOP VIEW
1A
1
2
1B
1Y
3
2A
4
2B
5
2Y
6
GND
7
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. θJA is measured with the component mounted on an evaluation PC board in free air.
Maximum Junction Temperature (Hermetic Pac kage or Die) . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
CC
DC Electrical Specifications
PARAMETERSYMBOL
HC TYPES
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
CMOS Loads
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
V
IH
V
IL
V
OH
V
OL
I
I
I
CC
TEST
CONDITIONS
(V)IO(mA)MINTYPMAXMINMAXMINMAX
I
VCC (V)
o
25
C-40oC TO 85oC-55oC TO 125oC
--21.5--1.5-1.5-V
4.53.15--3.15 -3.15-V
64.2--4.2-4.2-V
--2--0.5-0.5-0.5V
4.5--1.35-1.35-1.35V
6--1.8-1.8-1.8V
VIH or
V
-0.0221.9--1.9-1.9-V
IL
-0.024.54.4--4.4 -4.4-V
-0.0265.9--5.9-5.9-V
-44.53.98--3.84-3.7-V
-5.265.48--5.34-5.2-V
VIH or
V
0.022--0.1-0.1-0.1V
IL
0.024.5--0.1-0.1-0.1V
0.026--0.1-0.1-0.1V
44.5--0.26-0.33-0.4V
5.26--0.26-0.33-0.4V
VCC or
-6--±0.1-±1-±1µA
GND
VCC or
06--2-20-40µA
GND
UNITSV
3
CD54HCT32, CD74HC32, CD74HCT32
DC Electrical Specifications (Continued)
TEST
CONDITIONS
PARAMETERSYMBOL
(V)IO(mA)MINTYPMAXMINMAXMINMAX
I
HCT TYPES
High Level Input
V
IH
--4.5 to
Voltage
Low Level Input
V
IL
--4.5 to
Voltage
High Level Output
Voltage
V
OH
VIH or
V
-0.024.54.4--4.4-4.4-V
IL
CMOS Loads
High Level Output
-44.53.98--3.84-3.7-V
Voltage
TTL Loads
Low Level Output
Voltage
V
OL
VIH or
V
IL
-0.024.5--0.1-0.1-0.1V
CMOS Loads
Low Level Output
44.5--0.26-0.33-0.4V
Voltage
TTL Loads
Input Leakage
Current
I
I
V
CC
and
-5.5-±0.1-±1-±1µA
GND
Quiescent Device
Current
Additional Quiescent
Device Current Per
I
CC
VCC or
GND
∆I
CC
V
CC
-2.1
05.5--2-20-40µA
-4.5 to
Input Pin: 1 Unit Load
(Note 4)
NOTE:
4. For dual-supply systems theoretical worst case (V
HCT Input Loading Table
INPUTUNIT LOADS
All1.5
NOTE: Unit Load is ∆ICClimit specified in DC Electrical
Specifications table, e.g., 360µA max at 25oC.
o
25
C-40oC TO 85oC-55oC TO 125oC
V
(V)
CC
2-- 2 - 2 - V
5.5
--0.8-0.8-0.8V
5.5
-100360-450-490µA
5.5
= 2.4V, VCC = 5.5V) specification is 1.8mA.
I
UNITSV
Switching Specifications Input t
PARAMETERSYMBOL
HC TYPES
Propagation Delay, Input to
Output (Figure 1)
PropagationDelay,DataInputto
Output Y
Transition Times (Figure 1)t
t
PLH
t
PLH
TLH
, tf = 6ns
r
, t
PHLCL
, t
PHLCL
, t
THLCL
o
25
TEST
CONDITIONS
V
CC
(V)
C-40oC TO 85oC -55oCTO125oC
UNITSMIN TYP MAXMINMAXMINMAX
= 50pF2--90-115-135ns
4.5--18-23-27ns
6--15-20-23ns
= 15pF5-7-----ns
= 50pF2--75-95-110ns
4.5--15-19-22ns
6--13-16-19ns
4
CD54HCT32, CD74HC32, CD74HCT32
Switching Specifications Input t
, tf = 6ns (Continued)
r
PARAMETERSYMBOL
Input CapacitanceC
Power Dissipation Capacitance
I
C
PD
(Notes 5, 6)
HCT TYPES
Propagation Delay, Input to
t
RHL
, t
PHLCL
Output (Figure 2)
PropagationDelay,DataInputto
t
PLH
, t
PHLCL
Output Y
Transition Times (Figure 2)t
Input CapacitanceC
Power Dissipation Capacitance
(Notes 5, 6)
TLH
, t
I
C
PD
THLCL
NOTES:
is used to determine the dynamic power consumption, per gate.
5. C
PD
6. PD = V
2
fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage.
CC
Test Circuits and Waveforms
o
25
TEST
CONDITIONS
V
CC
(V)
C-40oC TO 85oC -55oCTO125oC
UNITSMIN TYP MAXMINMAXMINMAX
----10-10-10pF
- 5-22-----pF
= 50pF4.5--24-30-36ns
= 15pF5-9-----ns
= 50pF4.5--15-19-22ns
----10-10-10pF
- 5-22-----pF
tr = 6nstf = 6ns
V
t
CC
GND
TLH
INPUT
t
INVERTING
OUTPUT
THL
t
PHL
90%
50%
10%
t
90%
50%
10%
PLH
FIGURE 1. HC AND HCT TRANSITION TIMES AND PROPAGA-
TION DELAY TIMES, COMBINATION LOGIC
= 6ns
t
PLH
t
f
1.3V
10%
90%
t
3V
GND
TLH
tr = 6ns
INPUT
t
INVERTING
OUTPUT
THL
t
2.7V
1.3V
0.3V
PHL
FIGURE 2. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
5
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
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CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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