Texas Instruments CD74HCT640M, CD74HCT640E, CD74HC640M, CD74HC640E, CD54HCT640F3A Datasheet

CD74HC640,

/
j

[ /Title
(CD74
HC640
,
CD74
HCT64

0)
Sub­ect

(High
Speed
CMOS

Data sheet acquired from Harris Semiconductor
SCHS192

January 1998

Features

• Buffered Inputs

• Three-State Outputs

• Applications in Multiple-Data-Bus Architecture

• Fanout (Over Temperature Range)

- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads

- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads

• Wide Operating Temperature Range . . . -55

o

• Balanced Propagation Delay and Transition Times

• Significant Power Reduction Compared to LSTTL
Logic ICs

• HC Types

- 2V to 6V Operation

- High Noise Immunity: N

= 30%, NIH = 30% of V

IL

at VCC = 5V

• HCT Types

- 4.5V to 5.5V Operation

- Direct LSTTL Input Logic Compatibility,

V

= 0.8V (Max), VIH = 2V (Min)

IL

- CMOS Input Compatibility, I

≤ 1µA at VOL, V

l

Pinout

CD74HC640, CD74HCT640

CD74HCT640

High Speed CMOS Logic

Octal Three-State Bus Transceiver, Inverting

(PDIP, SOIC)

TOP VIEW

C to 125oC

CC

OH

1

DIR

A0

2

A1

3

A2

4

A3

5

A4

6

A5

7
8

A6

9

A7

GND

10

Description

The Harris CD74HC640 and CD74HCT640 silicon-gate
CMOS three-state bidirectional inverting and non-inverting
buffers are intended for two-way asynchronous
communication between data buses. They have high drive
current outputs which enable high-speed operation when
driving large bus capacitances. These circuits possess the
low power dissipation of CMOS circuits, and have speeds
comparable to low power Sckottky TTL circuits. They can
drive 15 LSTTL loads. The CD74HC640 and CD74HCT640
are inverting buffers.

V

20

CC

OE

19

B0

18

B1

17

B2

16

B3

15

B4

14

B5

13
12

B6
B7

11

Functional Diagram

A0

A1

THRU

A6

A7

OE

DIR

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright

© Harris Corporation 1998

OUTPUT ENABLE AND

DIRECTION-SELECT LOGIC

1

B0

B1

THRU

B6

B7

VCC = 20

GND = 10

File Number 1677.1

CD74HC640, CD74HCT640CD74HC640, CD74HCT640

TRUTH TABLE

CONTROL INPUTS DATA PORT STATUS
OE DIR A

LLOI
HHZZ
HLZZ
LHIO

To prevent excess currents in the High-Z modes all I/O terminals
should be terminated with 1kΩ to 1MΩ resistors.
H = High Level
L = Low Level
I = Input
O = Output (Inversion of Input Level)
Z = High Impedance

n

B

n

2

CD74HC640, CD74HCT640CD74HC640, CD74HCT640

Absolute Maximum Ratings Thermal Information

DC Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V

DC Input Diode Current, I

IK

For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA

DC Output Diode Current, I

OK

For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA

DC Drain Current, per Output, I

O

For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA

DC Output Source or Sink Current per Output Pin, I

O

For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA

DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA

Operating Conditions

Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

Supply Voltage Range, V

HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V

HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V

DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to V

Input Rise and Fall Time

2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)

4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)

6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

7. θJA is measured with the component mounted on an evaluation PC board in free air.

CC

Thermal Resistance (Typical, Note 2) θJA (oC/W)

PDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC

Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC

Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300oC

(SOIC - Lead Tips Only)

CC

DC Electrical Specifications

PARAMETER SYMBOL

HC TYPES

High Level Input
Voltage

Low Level Input
Voltage

High Level Output
Voltage
CMOS Loads

High Level Output
Voltage
TTL Loads

Low Level Output
Voltage
CMOS Loads

Low Level Output
Voltage
TTL Loads

Input Leakage
Current

V

IH

V

IL

V

OH

V

OL

I

I

TEST

CONDITIONS

(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX

I

V

CC

(V)

o

C -40oC TO 85oC -55oCTO125oC

25

UNITSV

- - 2 1.5 - - 1.5 - 1.5 - V

4.5 3.15 - - 3.15 - 3.15 - V
6 4.2 - - 4.2 - 4.2 - V

- - 2 - - 0.5 - 0.5 - 0.5 V

4.5 - - 1.35 - 1.35 - 1.35 V
6 - - 1.8 - 1.8 - 1.8 V

VIHor VIL-0.02 2 1.9 - - 1.9 - 1.9 - V

-0.02 4.5 4.4 - - 4.4 - 4.4 - V

-0.02 6 5.9 - - 5.9 - 5.9 - V

- - ---- - - - V

-6 4.5 3.98 - - 3.84 - 3.7 - V

-7.8 6 5.48 - - 5.34 - 5.2 - V

VIHor VIL0.02 2 - - 0.1 - 0.1 - 0.1 V

0.02 4.5 - - 0.1 - 0.1 - 0.1 V

0.02 6 - - 0.1 - 0.1 - 0.1 V

- - ---- - - - V
6 4.5 - - 0.26 - 0.33 - 0.4 V

7.8 6 - - 0.26 - 0.33 - 0.4 V

VCC or

-6--±0.1 - ±1-±1µA

GND

3