• Significant Power Reduction Compared to LSTTL
Logic ICs
• Alternate Source is Philips/Signetics
• HC Types
- 2V to 6V Operation
- High Noise Immunity: N
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V
= 0.8V (Max), VIH = 2V (Min)
IL
- CMOS Input Compatibility, I
• Related Literature
- CD54HC00F3A and CD54HCT00F3A Military
Data Sheet, Document Number 3753
= 30%, NIH = 30% of V
IL
≤ 1µA at VOL, V
l
CC
= 5V,
o
C to 125oC
CC
OH
CD74HC00, CD74HCT00
High Speed CMOS Logic
Quad 2-Input NAND Gate
Description
The Harris CD54HC00, CD54HCT00, CD74HC00 and
CD74HCT00 logic gates utilize silicon gate CMOS
technology to achieve operating speeds similar to LSTTL
gates with the low power consumption of standard CMOS
integrated circuits. All devices have the ability to drive 10
LSTTL loads. The 74HCT logic family is functionally pin
compatible with the standard 74LS logic family.
Ordering Information
TEMP.RANGE
PART NUMBER
CD74HC00E-55 to 12514 Ld PDIPE14.3
CD74HCT00E-55 to 12514 Ld PDIPE14.3
CD74HC00M-55 to 12514 Ld SOICM14.15
CD74HCT00M-55 to 12514 Ld SOICM14.15
CD54HC00F-55 to 12514 Ld CERDIPF14.3
CD54HCT00F-55 to 12514 Ld CERDIPF14.3
CD54HC00W-55 to 125Wafer
CD54HCT00W-55 to 125Wafer
CD54HC00H-55 to 125Die
CD54HCT00H-55 to 125Die
NOTE: When ordering, usethe entire partnumber.Add the suffix 96
to obtain the variant in the tape and reel.
(oC)PACKAGE
PKG.
NO.
Pinout
CD54HC00, CD54HCT00, CD74HC00, CD74HCT00
(PDIP, CERDIP, SOIC)
TOP VIEW
1A
1
2
1B
1Y
3
2A
4
2B
5
2Y
6
GND
7
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Maximum Junction Temperature (Hermetic Pac kage or Die) . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
CC
DC Electrical Specifications
PARAMETERSYMBOL
HC TYPES
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
CMOS Loads
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
V
IH
V
IL
V
OH
V
OL
I
I
TEST
CONDITIONS
(V)IO(mA)MINTYPMAXMINMAXMINMAX
I
VCC (V)
o
25
C-40oC TO 85oC-55oC TO 125oC
--21.5--1.5-1.5-V
4.53.15--3.15 -3.15-V
64.2--4.2-4.2-V
--2--0.5-0.5-0.5V
4.5--1.35-1.35-1.35V
6--1.8-1.8-1.8V
VIH or
V
-0.0221.9--1.9-1.9-V
IL
-0.024.54.4--4.4 -4.4-V
-0.0265.9--5.9-5.9-V
---------V
-44.53.98--3.84-3.7-V
-5.265.48--5.34-5.2-V
VIH or
V
0.022--0.1-0.1-0.1V
IL
0.024.5--0.1-0.1-0.1V
0.026--0.1-0.1-0.1V
---------V
44.5--0.26-0.33-0.4V
5.26--0.26-0.33-0.4V
VCC or
-6--±0.1-±1-±1µA
GND
UNITSV
3
CD54HC00, CD54HCT00, CD74HC00, CD74HCT00
DC Electrical Specifications (Continued)
TEST
CONDITIONS
PARAMETERSYMBOL
Quiescent Device
Current
I
CC
(V)IO(mA)MINTYPMAXMINMAXMINMAX
I
VCC or
GND
HCT TYPES
High Level Input
V
IH
--4.5 to
Voltage
Low Level Input
V
IL
--4.5 to
Voltage
High Level Output
Voltage
V
OH
VIH or
V
IL
CMOS Loads
High Level Output
-0.024.53.98--3.84-3.7-V
Voltage
TTL Loads
Low Level Output
Voltage CMOS Loads
Low Level Output
V
OL
VIH or
V
IL
0.024.5--0.26-0.33-0.4V
Voltage
TTL Loads
Input Leakage
Current
I
I
V
CC
and
GND
Quiescent Device
Current
Additional Quiescent
Device Current Per
I
CC
VCC or
GND
∆I
CC
V
CC
- 2.1
Input Pin: 1 Unit Load
NOTE:
2. For dual-supply systems theorectical worst case (V
o
25
C-40oC TO 85oC-55oC TO 125oC
V
CC
(V)
UNITSV
06--2-20-40µA
2-- 2 - 2 - V
5.5
--0.8-0.8-0.8V
5.5
-4.54.4--4.4-4.4-V
-44.5--0.1-0.1-0.1V
45.5-±0.1-±1-±1µA
05.5--2-20-40µA
-4.5 to
-100360-450-490µA
5.5
= 2.4V, VCC = 5.5V) specification is 1.8mA.
I
HCT Input Loading Table
INPUTUNIT LOADS
nA1.8
nB1.1
NOTE: Unit Load is ∆I
limit specified in DC Electrical Specifica-
CC
tions table, e.g. 360µA max at 25oC.
Switching Specifications Input t
PARAMETERSYMBOL
HC TYPES
Propagation Delay,
Input to Output (Figure 1)
PropagationDelay,DataInputto
Output Y
t
PLH
t
PLH
, tf = 6ns
r
, t
PHLCL
, t
PHLCL
o
C-40oC TO 85oC -55oCTO125oC
TEST
CONDITIONS
V
CC
(V)
25
UNITSMIN TYP MAXMINMAXMINMAX
= 50pF2--90-115-135ns
4.5--18-23-27ns
6--15-20-23ns
= 15pF5-7-----pF
4
CD54HC00, CD54HCT00, CD74HC00, CD74HCT00
Switching Specifications Input t
PARAMETERSYMBOL
Transition Times (Figure 1)t
Input CapacitanceC
Power Dissipation Capacitance
(Notes 3, 4)
HCT TYPES
Propagation Delay, Input to
Output (Figure 2)
PropagationDelay,DataInputto
Output Y
Transition Times (Figure 2)t
Input CapacitanceC
Power Dissipation Capacitance
(Notes 3, 4)
NOTES:
3. C
is used to determine the dynamic power consumption, per gate.
PD
4. PD = V
2
fi (CPD + CL) where fi = input frequency, CL = output load capacitance, VCC = supply voltage.
CC
TLH
t
PLH
t
PLH
TLH
, tf = 6ns (Continued)
r
TEST
CONDITIONS
, t
I
C
PD
, t
, t
, t
I
C
PD
THLCL
PHLCL
PHLCL
THLCL
= 50pF2--75-9518110ns
----10-10-10pF
- 5-25-----pF
= 50pF4.5--20-25-30ns
= 15pF5-8-----pF
= 50pF4.5--15-19-22ns
----10-10-10pF
- 5-25-----pF
o
25
V
CC
(V)
C-40oC TO 85oC -55oCTO125oC
UNITSMIN TYP MAXMINMAXMINMAX
4.5--15-19-22ns
6--13-16-19ns
Test Circuits and Waveforms
tr = 6nstf = 6ns
V
t
CC
GND
TLH
3V
1.3V
t
PHL
90%
50%
10%
t
90%
50%
10%
PLH
INPUT
t
INVERTING
OUTPUT
THL
FIGURE 1. HC AND HCU TRANSITION TIMES AND PROPAGA-
TION DELAY TIMES, COMBINATION LOGIC
INPUT LEVELHC TYPESHCT TYPES
V
CC
V
S
50% V
CC
NOTE: Transition times and propagation delay times.
= 6ns
t
PLH
t
f
1.3V
10%
90%
t
3V
GND
TLH
tr = 6ns
INPUT
t
INVERTING
OUTPUT
THL
t
2.7V
1.3V
0.3V
PHL
FIGURE 2. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
5
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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