Texas Instruments CD4066BPW, CD4066BNSR, CD4066BM96, CD4066BM, CD4066BF3A Datasheet

...
SOIC
M
CD4066BM
TSSOP
PW
CM066B
D
15-V Digital or ±7.5-V Peak-to-Peak Switching
D
125-Typical On-State Resistance for 15-V Operation
D
Switch On-State Resistance Matched to Within 5 Over 15-V Signal-Input Range
D
On-State Resistance Flat Over Full Peak-to-Peak Signal Range
D
High On/Off Output-Voltage Ratio: 80 dB Typical at f
D
High Degree of Linearity: <0.5% Distortion Typical at f V
– VSS 10 V, RL = 10 k
DD
D
Extremely Low Off-State Switch Leakage,
= 10 kHz, RL = 1 k
is
= 1 kHz, Vis = 5 V p-p,
is
Resulting in Very Low Offset Current and High Effective Off-State Resistance: 10 pA Typical at V
D
Extremely High Control Input Impedance
– VSS = 10 V, TA = 25°C
DD
(Control Circuit Isolated From Signal Circuit): 10
D
Low Crosstalk Between Switches: –50 dB Typical at f
12
Typical
= 8 MHz, RL = 1 k
is
CMOS QUAD BILATERAL SWITCH
SCHS051C – REVISED FEBRUARY 2003
D
Matched Control-Input to Signal-Output Capacitance: Reduces Output Signal Transients
D
Frequency Response, Switch On = 40 MHz Typical
D
100% Tested for Quiescent Current at 20 V
D
5-V, 10-V, and 15-V Parametric Ratings
D
Meets All Requirements of JEDEC Tentative Standard No. 13B, Standard Specifications for Description of B-Series CMOS Devices
D
Applications: – Analog Signal Switching/Multiplexing:
Signal Gating, Modulator, Squelch Control, Demodulator, Chopper,
Commutating Switch – Digital Signal Switching/Multiplexing – Transmission-Gate Logic Implementation – Analog-to-Digital and Digital-to-Analog
Conversion – Digital Control of Frequency, Impedance,
Phase, and Analog-Signal Gain
CD4066B
description/ordering information
T
A
CDIP – F Tube CD4066BF3A CD4066BF3A PDIP – E Tube CD4066BE CD4066BE
–55°C to 125°C
SOP – NS Tape and reel CD4066BNSR CD4066B
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
E, F, M, NS, OR PW PACKAGE
SIG A IN/OUT SIG A OUT/IN SIG B OUT/IN SIG B IN/OUT
CONTROL B
CONTROL C
V
SS
(TOP VIEW)
1
14
2
13
3
12
4
11
5
10 6 7
ORDERING INFORMATION
PACKAGE
Tube CD4066BM Tape and reel CD4066BM96
Tube CD4066BPW Tape and reel CD4066BPWR
V
DD
CONTROL A CONTROL D SIG D IN/OUT SIG D OUT/IN SIG C OUT/IN
9
SIG C IN/OUT
8
ORDERABLE
PART NUMBER
TOP-SIDE MARKING
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright 2003, Texas Instruments Incorporated
1
CD4066B CMOS QUAD BILATERAL SWITCH
SCHS051C – REVISED FEBRUARY 2003
description/ordering information (continued)
CD4066B is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-for-pin compatible with the CD4016B, but exhibits a much lower on-state resistance. In addition, the on-state resistance is relatively constant over the full input-signal range.
The CD4066B consists of four bilateral switches, each with independent controls. Both the p and the n devices in a given switch are biased on or off simultaneously by the control signal. As shown in Figure 1, the well of the n-channel device on each switch is tied to either the input, when the switch is on, or to V off. This configuration eliminates the variation of the switch-transistor threshold voltage with input signal and, thus, keeps the on-state resistance low over the full operating-signal range.
The advantages over single-channel switches include peak input-signal voltage swings equal to the full supply voltage and more constant on-state impedance over the input-signal range. However, for sample-and-hold applications, the CD4016B is recommended.
Switch
Control
IN
V
is
when the switch is
SS
p
n
p
OUT
V
os
n
CONTROL
V
C
All control inputs are protected by CMOS protection network.
NOTES: A. All p substrates are connected to VDD.
B. Normal operation control-line biasing: Switch on (logic 1), VC = VDD; Switch off (logic 0), VC = V C. Signal-level range: VSS ≤ Vis V
DD
n
V
SS
V
DD
V
SS
SS
Figure 1. Schematic Diagram of One-of-Four Identical Switches and Associated Control Circuitry
92CS - 29113
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
VDDSupply voltage
318V
CD4066B
CMOS QUAD BILATERAL SWITCH
SCHS051C – REVISED FEBRUARY 2003
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
DC supply-voltage range, (V Input voltage range, V DC input current, I
, all inputs –0.5 V to VDD + 0.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
is
, any one input ±10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN
Package thermal impedance, θ
) (voltages referenced to VSS terminal) –0.5 V to 20 V. . . . . . . . . . . . . . . . . .
DD
(see Note 1): E package 80°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JA
M package 86°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NS package 76°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PW package 113°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (during soldering):
At distance 1/16 ± 1/32 inch (1,59 ± 0,79 mm) from case for 10 s max 265°C. . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: The package thermal impedance is calculated in accordance with JESD 51-7.
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
recommended operating conditions
MIN MAX UNIT
pp
T
Operating free-air temperature
A
–55
125 °C
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
3
CD4066B
IN
55°C–40°C
85°C
125°C
I
A
(
)
R
L
returned
() On state resistance
Pro agation delay
V
SS
GND, C
L
t)
(
V
C
V
SS
V
CMOS QUAD BILATERAL SWITCH
SCHS051C – REVISED FEBRUARY 2003
electrical characteristics
PARAMETER TEST CONDITIONS
Quiescent device
DD
current
Signal Inputs (Vis) and Output (Vos)
VC = V
DD
On-state resistance
r
on
max
r
on
THD
I
is
t
pd
C
is
C
os
C
ios
­difference between any two switches
Total harmonic distortion
–3-dB cutoff frequency (switch on)
–50-dB feed-through frequency (switch off)
Input/output leakage current (switch off) (max)
–50-dB crosstalk frequency
p (signal input to signal outpu
Input capacitance Output Feed through
= 10 k
to VDD – V
Vis = VSS to V
RL = 10 kΩ, VC = V
VC = VDD = 5 V, VSS = –5 V, V
is(p-p)
(sine wave centered on 0 V), RL = 10 kΩ, fis = 1-kHz sine wave
VC = VDD = 5 V , VSS = –5 V , V (sine wave centered on 0 V), RL = 1 k
VC = VSS = –5 V, V (sine wave centered on 0 V), RL = 1 k
VC = 0 V, Vis = 18 V, Vos = 0 V; and VC = 0 V, Vis = 0 V, Vos = 18 V
VC(A) = VDD = 5 V, VC(B) = VSS = –5 V, Vis(A) = 5 V RL = 1 k
RL = 200 kΩ, VC = VDD,
Vis = 10 V
square wave centered on 5 V),
tr, tf = 20 ns
VDD = 5 V
=
=
SS
2
= 5 V
p-p
= –5
DD
, 50-source,
= 50 F,
DD
is(p-p)
p
LIMITS AT INDICATED TEMPERATURES
V
V
(V)DD(V)
0, 5 5 0.25 0.25 7.5 7.5 0.01 0.25 0, 10 10 0.5 0.5 15 15 0.01 0.5 0, 15 15 1 1 30 30 0.01 1 0, 20 20 5 5 150 150 0.02 5
is(p-p)
= 5 V
5 800 850 1200 1300 470 1050 10 310 330 500 550 180 400 15 200 210 300 320 125 240
5 15 10 10 15 5
= 5 V
18 ±0.1 ±0.1 ±1 ±1 ±10
5 20 40 10 10 20 15 7 15
°
25°C
TYP MAX
0.4 %
40 MHz
1 MHz
–5
8 MHz
8 8
0.5
UNIT
µ
±0.1 µA
ns
pF
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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