[ /Title
(CD40
49UB,
CD405
0B)
/Subject
(CMO
S Hex
Buffer/
Converters)
/Autho
r ()
/Keywords
(Harris
Semiconductor,
CD400
0,
metal
gate,
CMOS
Data sheet acquired from Harris Semiconductor
SCHS046A
CMOS Hex Buffer/Converters
The CD4049UB and CD4050B devices are inverting and
non-inverting hex buffers, respectively, and feature logiclevel conversion using only one supply voltage (V
input-signal high level (V
) can exceed the VCC supply
IH
CC
). The
voltage when these devices are used for logic-level
conversions.These devices are intended for use as CMOS
to DTL/TTL converters and can drive directly two DTL/TTL
loads. (V
= 5V, VOL≤ 0.4V, and IOL≥ 3.3mA.)
CC
The CD4049UB and CD4050B are designated as
replacements for CD4009UB and CD4010B, respectively.
Because the CD4049UB and CD4050B require only one
power supply, they are preferred over the CD4009UB and
CD4010B and should be used in place of the CD4009UB
and CD4010B in all inverter, current driver, or logic-level
conversion applications. In these applications the
CD4049UB and CD4050B are pin compatible with the
CD4009UB and CD4010B respectively, and can be
substituted for these devices in existing as well as in new
designs. Terminal No. 16 is not connected internally on the
CD4049UB or CD4050B, therefore, connection to this
terminal is of no consequence to circuit operation. For
applications not requiring high sink-current or voltage
conversion, the CD4069UB Hex Inverter is recommended.
Pinouts
CD4049UB (PDIP, CERDIP)
TOP VIEW
August 1998 - Revised May 1999
Features
• CD4049UB Inverting
• CD4050B Non-Inverting
• High Sink Current for Driving 2 TTL Loads
• High-To-Low Level Logic Conversion
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Package
Temperature Range; 100nA at 18V and 25
o
C
• 5V, 10V and 15V Parametric Ratings
Applications
• CMOS to DTL/TTL Hex Converter
• CMOS Current “Sink” or “Source” Driver
• CMOS High-To-Low Logic Level Converter
Ordering Information
TEMP.
PART NUMBER
CD4049UBE-55 to 12516 Ld PDIPE16.3
CD4050BE-55 to 12516 Ld PDIPE16.3
CD4049UBF-55 to 12516 Ld CERDIPF16.3
CD4050BF-55 to 12516 Ld CERDIPF16.3
CD4050BM-55 to 12516 Ld SOICM16.3
NOTE: Wafer and die for this part number is available which meets
all electrical specifications. Please contact your local sales office or
customer service for ordering information.
RANGE (oC)PACKAGE
CD4050B (PDIP, CERDIP, SOIC)
TOP VIEW
PKG.
NO.
V
CC
G = A
H =
I =
V
SS
NC
1
2
A
3
4
B
B
5
6
C
7
C
8
16
15
F
L =
F
14
NC
13
K =
12
E
11
E
10
J = D
9
D
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Supply Voltage (V+ to V-). . . . . . . . . . . . . . . . . . . . . . . -0.5V to 20V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . ±10mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
1. Index area:Anotchor a pinoneidentification mark shall belocated adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead basemetalonly.Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, andN/2+1)may beconfiguredwith a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
-DBASE
E
D
S
S
Q
A
-CL
METAL
b1
M
(b)
SECTION A-A
α
(c)
M
eA
eA/2
aaaC A - B
M
c
D
SS
F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm (0.024
inch)
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1999, Texas Instruments Incorporated
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