Texas Instruments CC2640R2L Datasheet

CC2640R2L SimpleLink™ Bluetooth®5.1 Low Energy Wireless MCU

1 Device Overview

1.1 Features

• Microcontroller – Powerful Arm®Cortex®-M3 – EEMBC CoreMark®score: 142 – Up to 48-MHz clock speed – 275KB of nonvolatile memory including 128KB
of in-system programmable flash
– Up to 28KB of system SRAM, of which 20KB is
ultra-low leakage SRAM – 8KB of SRAM for cache or system RAM use – 2-pin cJTAG and JTAG debugging – Supports over-the-air upgrade (OTA)
• Efficient code size architecture, placing drivers, TI­RTOS, and Bluetooth®software in ROM to make more Flash available for the application
• RoHS-compliant packages – 5mm × 5mm RHB VQFN32 (15 GPIOs) – 7mm × 7mm RGZ VQFN48 (31 GPIOs)
• Peripherals – All digital peripheral pins can be routed to any
GPIO
– Four general-purpose timer modules (eight 16-
bit or four 32-bit timers, PWM each)
– 12-bit ADC, 200-ksamples/s, 8-channel analog
MUX – UART, I2C, and I2S – 2× SSI (SPI, MICROWIRE, TI) – Real-time clock (RTC) – AES-128 security module – True random number generator (TRNG) – Integrated temperature sensor
• External system – On-chip internal DC/DC converter – Seamless integration with CC2590 and CC2592
range extenders – Very few external components – Pin compatible with the SimpleLink™ CC2640,
CC2640R2F, and CC2650 devices in 5mm ×
5mm and 7mm x 7mm VQFN packages
CC2640R2L
SWRS250 –JUNE 2020
– Pin compatible with the SimpleLink™ CC2642R
and CC2652R devices in 7mm x 7mm VQFN packages
– Pin compatible with the SimpleLink™ CC1350
device in 5mm × 5mm VQFN packages
• Low power – Wide supply voltage range
– Normal operation: 1.8 to 3.8 V
– External regulator mode: 1.7 to 1.95 V – Active-mode RX: 5.9 mA – Active-mode TX at 0 dBm: 6.1 mA – Active-mode TX at +5 dBm: 9.1 mA – Active-mode MCU: 61 µA/MHz – Active-mode MCU: 48.5 CoreMark/mA – Standby: 1.5 µA (RTC running and RAM/CPU
retention) – Shutdown: 100 nA (wake up on external events)
• RF section – 2.4-GHz RF transceiver compatible with
Bluetooth low energy 5.1 and earlier LE specifications
– Excellent receiver sensitivity (–97 dBm for BLE),
selectivity, and blocking performance – Link budget of 102 dB for BLE – Programmable output power up to +5 dBm – Single-ended or differential RF interface – Suitable for systems targeting compliance with
worldwide radio frequency regulations
– ETSI EN 300 328 (Europe)
– EN 300 440 Class 2 (Europe)
– FCC CFR47 Part 15 (US)
– ARIB STD-T66 (Japan)
• Development Tools and Software – Full-feature development kits – Multiple reference designs – SmartRF™ StudioIAR Embedded Workbench®for Arm
®
Code Composer Studio™ Integrated
Development Environment (IDE)
Code Composer Studio™ Cloud IDE
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
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1.2 Applications

Home and Building AutomationConnected appliancesLightingSmart locksGatewaysSecurity Systems
IndustrialFactory automationAsset tracking and managementHMIAccess control
Electronic Point Of Sale (EPOS)Electronic Shelf Label (ESL)

1.3 Description

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Health and MedicalElectronic thermometersSpO2Blood glucose monitors and blood pressure
monitors
Weigh scalesHearing aids
Sports and Fitness – Wearable fitness and activity monitorsSmart trackersPatient monitorsFitness machines
HID – GamingPointing devices (wireless keyboard and
mouse)
The CC2640R2L device is a 2.4 GHz wireless microcontroller (MCU) supporting Bluetooth®5.1 Low
Energy and Proprietary 2.4 GHz applications. The device is optimized for low-power wireless
communication and advanced sensing in building security systems, HVAC, asset tracking, and medical markets, and applications where industrial performance is required. The highlighted features of this device include:
Support for Bluetooth®5.1 features: LE Coded PHYs (Long Range), LE 2-Mbit PHY (High Speed), Advertising Extensions, Multiple Advertisement Sets, as well as backwards compatibility and support for key features from the Bluetooth®5.0 and earlier Low Energy specifications.
Fully-qualified Bluetooth®5.1 software protocol stack included with the SimpleLink™ CC2640R2
Software Development Kit (SDK) for developing applications on the powerful Arm®Cortex®-M3
processor.
Longer battery life wireless applications with low standby current of 1.5 µA with full RAM retention.
Dedicated software controlled radio controller (Arm®Cortex®-M0) providing flexible low-power RF transceiver capability to support multiple physical layers and RF standards, such as real-time localization (RTLS) technologies.
Excellent radio sensitivity and robustness (selectivity and blocking) performance for Bluetooth®Low Energy (-103 dBm for 125-kbps LE Coded PHY).
The CC2640R2L device is part of the SimpleLink™ microcontroller (MCU) platform, which consists of Wi­Fi®, Bluetooth Low Energy, Thread, ZigBee®, Sub-1 GHz MCUs, and host MCUs that all share a common, easy-to-use development environment with a single core software development kit (SDK) and rich tool set. A one-time integration of the SimpleLink™ platform enables you to add any combination of the portfolio’s devices into your design, allowing 100 percent code reuse when your design requirements change. For more information, visit SimpleLink™ MCU platform.
PART NUMBER PACKAGE BODY SIZE (NOM)
CC2640R2LRGZ VQFN (48) 7.00 mm × 7.00 mm CC2640R2LRHB VQFN (32) 5.00 mm × 5.00 mm
(1) For more information, see Section 9.
2
Device Overview Copyright © 2020, Texas Instruments Incorporated
Device Information
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(1)
SimpleLink CC2640R2L Wireless MCU
Main CPU
128-KB
Flash
cJTAG
20-KB
SRAM
ROM
ARM
Cortex-M3
DC-DC Converter
RF Core
ARM
Cortex-M0
DSP modem
4-KB
SRAM
ROM
General Peripherals / Modules
4× 32-bit Timers
2× SSI (SPI, µW, TI)
Watchdog Timer
Temperature and Battery Monitor
RTC
I2C
UART
I2S
15 / 31 GPIOs
AES 32-channel µDMA
ADC
Digital PLL
Up to 48 MHz
61 µA/MHz
TRNG
ADC
8-KB
cache
12-bit ADC, 200 ksps
Time-to-Digital Converter
2-KB AUX RAM
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1.4 Functional Block Diagram

Figure 1-1 shows a block diagram for the CC2640R2L device.
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Figure 1-1. Block Diagram
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Table of Contents

1 Device Overview ......................................... 1
1.1 Features .............................................. 1
1.2 Applications........................................... 2
1.3 Description............................................ 2
1.4 Functional Block Diagram ............................ 3
2 Revision History ......................................... 4
3 Device Comparison ..................................... 5
3.1 Related Products ..................................... 5
4 Terminal Configuration and Functions.............. 6
4.1 Pin Diagram – RGZ Package ........................ 6
4.2 Signal Descriptions – RGZ Package ................. 7
4.3 Pin Diagram – RHB Package ........................ 9
4.4 Signal Descriptions – RHB Package................ 10
5 Specifications........................................... 11
5.1 Absolute Maximum Ratings......................... 11
5.2 ESD Ratings ........................................ 11
5.3 Recommended Operating Conditions............... 11
5.4 Power Consumption Summary...................... 12
5.5 General Characteristics ............................. 13
5.6 125-kbps Coded (Bluetooth 5) – RX ................ 14
5.7 125-kbps Coded (Bluetooth 5) – TX ................ 15
5.8 500-kbps Coded (Bluetooth 5) – RX ................ 15
5.9 500-kbps Coded (Bluetooth 5) – TX ................ 16
5.10 1-Mbps GFSK (Bluetooth low energy) – RX ........ 16
5.11 1-Mbps GFSK (Bluetooth low energy) – TX ........ 17
5.12 2-Mbps GFSK (Bluetooth 5) – RX .................. 17
5.13 2-Mbps GFSK (Bluetooth 5) – TX................... 18
5.14 24-MHz Crystal Oscillator (XOSC_HF) ............. 18
5.15 32.768-kHz Crystal Oscillator (XOSC_LF).......... 19
5.16 48-MHz RC Oscillator (RCOSC_HF) ............... 19
5.17 32-kHz RC Oscillator (RCOSC_LF)................. 19
5.18 ADC Characteristics................................. 19
5.19 Temperature Sensor ................................ 20
5.20 Battery Monitor...................................... 21
5.21 Synchronous Serial Interface (SSI) ................ 21
5.22 DC Characteristics .................................. 23
5.23 Thermal Resistance Characteristics ................ 24
5.24 Timing Requirements ............................... 24
5.25 Switching Characteristics ........................... 24
5.26 Typical Characteristics .............................. 25
6 Detailed Description ................................... 29
6.1 Overview ............................................ 29
6.2 Functional Block Diagram........................... 29
6.3 Main CPU ........................................... 30
6.4 RF Core ............................................. 30
6.5 Memory.............................................. 30
6.6 Debug ............................................... 31
6.7 Power Management................................. 31
6.8 Clock Systems ...................................... 32
6.9 General Peripherals and Modules .................. 32
6.10 Voltage Supply Domains............................ 33
6.11 System Architecture................................. 33
7 Application, Implementation, and Layout ......... 34
7.1 Application Information.............................. 34
7.2 5 × 5 External Differential (5XD) Application Circuit
...................................................... 36
8 Device and Documentation Support ............... 38
8.1 Device Nomenclature ............................... 38
8.2 Tools and Software ................................. 39
8.3 Documentation Support ............................. 39
8.4 Support Resources.................................. 39
8.5 Trademarks.......................................... 40
8.6 Electrostatic Discharge Caution..................... 40
8.7 Export Control Notice ............................... 40
8.8 Glossary............................................. 40
9 Mechanical, Packaging, and Orderable
Information .............................................. 41

2 Revision History

DATE REVISION NOTES
June 2020 * Initial Release
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3 Device Comparison

Table 3-1. Device Family Overview
Device PHY Support Flash (KB) RAM (KB) GPIO Package
CC2640R2Lxxx
CC2640R2Fxxx
CC2640F128xxx Bluetooth low energy (Normal) 128 20 31, 15, 10 RGZ, RHB, RSM CC2650F128xxx Multi-Protocol CC2630F128xxx IEEE 802.15.4 (ZigBee/6LoWPAN) 128 20 31, 15, 10 RGZ, RHB, RSM CC2620F128xxx IEEE 802.15.4 (RF4CE) 128 20 31, 10 RGZ, RSM
(1) The package designator replaces the xxx in device name to form a complete device name, RGZ is 7-mm × 7-mm VQFN48, RHB is 5-
mm × 5-mm VQFN32, RSM is 4-mm × 4-mm VQFN32, and YFV is 2.7-mm × 2.7-mm DSBGA.
(2) CC2640R2L devices contain Bluetooth Low Energy Host and Controller libraries in ROM, leaving more of the 128KB Flash memory
available for the customer application when used with supported BLE-Stack software protocol stack releases. Actual use of ROM and Flash memory by the protocol stack may vary depending on device software configuration. See www.ti.com for more details.
(3) The CC2650 device supports all PHYs and can be reflashed to run all the supported standards.
(2)
(2)
Bluetooth low energy
(Normal, High Speed, Long Range)
Bluetooth low energy
(Normal, High Speed, Long Range)
(3)
128 20 31, 15 RGZ, RHB
128 20 31, 15, 14, 10 RGZ, RHB, YFV, RSM
128 20 31, 15, 10 RGZ, RHB, RSM

3.1 Related Products

TI's Wireless Connectivity
The wireless connectivity portfolio offers a wide selection of low-power RF solutions suitable for a broad range of applications. The offerings range from fully customized solutions to turn key offerings with pre-certified hardware and software (protocol).
TI's SimpleLink™ Sub-1 GHz Wireless MCUs
Long-range, low-power wireless connectivity solutions are offered in a wide range of Sub-1 GHz ISM bands.
Companion Products
Review products that are frequently purchased or used in conjunction with this product.
SimpleLink™ CC2640R2 Wireless MCU LaunchPad™ Development Kit
The CC2640R2 LaunchPad ™ development kit brings easy Bluetooth®low energy (BLE) connection to the LaunchPad ecosystem with the SimpleLink ultra-low power CC26xx family of devices. Compared to the CC2650 LaunchPad, the CC2640R2 LaunchPad provides the following:
More free flash memory for the user application in the CC2640R2 wireless MCU
Out-of-the-box support for Bluetooth 4.2 specification
4× faster Over-the-Air download speed compared to Bluetooth 4.1
SimpleLink™ Bluetooth low energy/Multi-standard SensorTag
The new SensorTag IoT kit invites you to realize your cloud-connected product idea. The new SensorTag now includes 10 low-power MEMS sensors in a tiny red package. And it is expandable with DevPacks to make it easy to add your own sensors or actuators.
Reference Designs Find reference designs leveraging the best in TI technology to solve your system-
level challenges
(1)
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Device ComparisonCopyright © 2020, Texas Instruments Incorporated
5
40
39
DIO_25 38
DIO_24 37
21
22
23
24
DCDC_SW33
DIO_18
34
RESET_N35
DIO_2336
X32K_Q2 4
X32K_Q1 3
RF_N 2
RF_P 1
DIO_2232
DIO_2131
DIO_2030
DIO_1929
DIO_0 5
DIO_1 6
DIO_2 7
8
28
27
26
JTAG_TCKC25
9
10
11
12
41
42
43
44
20
DIO_15
19
DIO_14
18
17
VDDR 45
46
47
VDDR_RF 48
16
15
14
13
DIO_17
DIO_16
VDDS_DCDC
DIO_26
DIO_12
DIO_13
VDDS2
DIO_11
DIO_10
DIO_5
DIO_6
DIO_7
DIO_3
DIO_4
X24M_P
X24M_N
DIO_8
DIO_9
DIO_28
VDDS3
DCOUPL
JTAG_TMSC
DIO_29
DIO_30
DIO_27
VDDS
CC2640R2L
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4 Terminal Configuration and Functions

4.1 Pin Diagram – RGZ Package

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Figure 4-1. RGZ Package
48-Pin VQFN
(7-mm × 7-mm) Pinout, 0.5-mm Pitch
I/O pins marked in Figure 4-1 in bold have high-drive capabilities; they are the following:
Pin 10, DIO_5
Pin 11, DIO_6
Pin 12, DIO_7
Pin 24, JTAG_TMSC
Pin 26, DIO_16
Pin 27, DIO_17
I/O pins marked in Figure 4-1 in italics have analog capabilities; they are the following:
Pin 36, DIO_23
Pin 37, DIO_24
Pin 38, DIO_25
Pin 39, DIO_26
Pin 40, DIO_27
Pin 41, DIO_28
Pin 42, DIO_29
Pin 43, DIO_30
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4.2 Signal Descriptions – RGZ Package

Table 4-1. Signal Descriptions – RGZ Package
NAME NO. TYPE DESCRIPTION
DCDC_SW 33 Power Output from internal DC/DC DCOUPL 23 Power 1.27-V regulated digital-supply decoupling capacitor DIO_0 5 Digital I/O GPIO DIO_1 6 Digital I/O GPIO DIO_2 7 Digital I/O GPIO DIO_3 8 Digital I/O GPIO DIO_4 9 Digital I/O GPIO DIO_5 10 Digital I/O GPIO, high-drive capability DIO_6 11 Digital I/O GPIO, high-drive capability DIO_7 12 Digital I/O GPIO, high-drive capability DIO_8 14 Digital I/O GPIO DIO_9 15 Digital I/O GPIO DIO_10 16 Digital I/O GPIO DIO_11 17 Digital I/O GPIO DIO_12 18 Digital I/O GPIO DIO_13 19 Digital I/O GPIO DIO_14 20 Digital I/O GPIO DIO_15 21 Digital I/O GPIO DIO_16 26 Digital I/O GPIO, JTAG_TDO, high-drive capability DIO_17 27 Digital I/O GPIO, JTAG_TDI, high-drive capability DIO_18 28 Digital I/O GPIO DIO_19 29 Digital I/O GPIO DIO_20 30 Digital I/O GPIO DIO_21 31 Digital I/O GPIO DIO_22 32 Digital I/O GPIO DIO_23 36 Digital/Analog I/O GPIO, Analog DIO_24 37 Digital/Analog I/O GPIO, Analog DIO_25 38 Digital/Analog I/O GPIO, Analog DIO_26 39 Digital/Analog I/O GPIO, Analog DIO_27 40 Digital/Analog I/O GPIO, Analog DIO_28 41 Digital/Analog I/O GPIO, Analog DIO_29 42 Digital/Analog I/O GPIO, Analog DIO_30 43 Digital/Analog I/O GPIO, Analog JTAG_TMSC 24 Digital I/O JTAG TMSC, high-drive capability JTAG_TCKC 25 Digital I/O JTAG TCKC
(3)
RESET_N 35 Digital input Reset, active-low. No internal pullup. RF_P 1 RF I/O
RF_N 2 RF I/O
Positive RF input signal to LNA during RX Positive RF output signal to PA during TX
Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX VDDR 45 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC/DC VDDR_RF 48 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC/DC
(1) For more details, see the technical reference manual (listed in Section 8.3). (2) Do not supply external circuitry from this pin. (3) For design consideration regarding noise immunity for this pin, see the JTAG Interface chapter in the CC13x0, CC26x0 SimpleLink™
Wireless MCU Technical Reference Manual
(4) If internal DC/DC is not used, this pin is supplied internally from the main LDO. (5) If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
(1)
(2)
(2)(4) (2)(5)
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Table 4-1. Signal Descriptions – RGZ Package (continued)
NAME NO. TYPE DESCRIPTION
VDDS 44 Power 1.8-V to 3.8-V main chip supply VDDS2 13 Power 1.8-V to 3.8-V DIO supply VDDS3 22 Power 1.8-V to 3.8-V DIO supply VDDS_DCDC 34 Power 1.8-V to 3.8-V DC/DC supply X32K_Q1 3 Analog I/O 32-kHz crystal oscillator pin 1 X32K_Q2 4 Analog I/O 32-kHz crystal oscillator pin 2 X24M_N 46 Analog I/O 24-MHz crystal oscillator pin 1 X24M_P 47 Analog I/O 24-MHz crystal oscillator pin 2 EGP Power Ground – Exposed Ground Pad
(1) (1)
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28
29
27
30
212022
19
18
13
12
14
11
453
6
7
26 15
25 16
31 10
32 9
232
241
178
DIO_10
DIO_7
DIO_9
DIO_8
DCDC_SW
RESET_N
VDDS_DCDC
DIO_11
VDDR_RF
X24M_N
X24M_P
VDDR
VDDS
DIO_13
DIO_14
DIO_12
DIO_3
JTAG_TMSC
DIO_4
DCOUPL
VDDS2
JTAG_TCKC
DIO_5
DIO_6
RF_P
RF_N
RX_TX
DIO_0
DIO_1
DIO_2
X32K_Q1
X32K_Q2
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4.3 Pin Diagram – RHB Package

CC2640R2L
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I/O pins marked in Figure 4-2 in bold have high-drive capabilities; they are the following:
Pin 8, DIO_2
Pin 9, DIO_3
Pin 10, DIO_4
Pin 13, JTAG_TMSC
Pin 15, DIO_5
Pin 16, DIO_6 I/O pins marked in Figure 4-2 in italics have analog capabilities; they are the following:
Pin 20, DIO_7
Pin 21, DIO_8
Pin 22, DIO_9
Pin 23, DIO_10
Pin 24, DIO_11
Pin 25, DIO_12
Pin 26, DIO_13
Pin 27, DIO_14
Figure 4-2. RHB Package
32-Pin VQFN
(5-mm × 5-mm) Pinout, 0.5-mm Pitch
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4.4 Signal Descriptions – RHB Package

Table 4-2. Signal Descriptions – RHB Package
NAME NO. TYPE DESCRIPTION
DCDC_SW 17 Power Output from internal DC/DC DCOUPL 12 Power 1.27-V regulated digital-supply decoupling DIO_0 6 Digital I/O GPIO DIO_1 7 Digital I/O GPIO DIO_2 8 Digital I/O GPIO, high-drive capability DIO_3 9 Digital I/O GPIO, high-drive capability DIO_4 10 Digital I/O GPIO, high-drive capability DIO_5 15 Digital I/O GPIO, High drive capability, JTAG_TDO DIO_6 16 Digital I/O GPIO, High drive capability, JTAG_TDI DIO_7 20 Digital/Analog I/O GPIO, Analog DIO_8 21 Digital/Analog I/O GPIO, Analog DIO_9 22 Digital/Analog I/O GPIO, Analog DIO_10 23 Digital/Analog I/O GPIO, Analog DIO_11 24 Digital/Analog I/O GPIO, Analog DIO_12 25 Digital/Analog I/O GPIO, Analog DIO_13 26 Digital/Analog I/O GPIO, Analog DIO_14 27 Digital/Analog I/O GPIO, Analog JTAG_TMSC 13 Digital I/O JTAG TMSC, high-drive capability JTAG_TCKC 14 Digital I/O JTAG TCKC
(3)
RESET_N 19 Digital input Reset, active-low. No internal pullup. RF_N 2 RF I/O
RF_P 1 RF I/O
Negative RF input signal to LNA during RX, Negative RF output signal to PA during TX
Positive RF input signal to LNA during RX,
Positive RF output signal to PA during TX RX_TX 3 RF I/O Optional bias pin for the RF LNA VDDR 29 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC/DC VDDR_RF 32 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC/DC VDDS 28 Power 1.8-V to 3.8-V main chip supply VDDS2 11 Power 1.8-V to 3.8-V GPIO supply VDDS_DCDC 18 Power 1.8-V to 3.8-V DC/DC supply X32K_Q1 4 Analog I/O 32-kHz crystal oscillator pin 1 X32K_Q2 5 Analog I/O 32-kHz crystal oscillator pin 2 X24M_N 30 Analog I/O 24-MHz crystal oscillator pin 1 X24M_P 31 Analog I/O 24-MHz crystal oscillator pin 2 EGP Power Ground – exposed ground pad
(1) See technical reference manual (listed in Section 8.3) for more details. (2) Do not supply external circuitry from this pin. (3) For design consideration regarding noise immunity for this pin, see the JTAG Interface chapter in the CC13x0, CC26x0 SimpleLink™
Wireless MCU Technical Reference Manual
(4) If internal DC/DC is not used, this pin is supplied internally from the main LDO. (5) If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
(1)
(2)
(4)(2) (2)(5)
(1)
(1)
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5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
Supply voltage (VDDS, VDDS2, and VDDS3)
Supply voltage (VDDS VDDR)
Voltage on any digital pin Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P –0.3 VDDR + 0.3, max 2.25 V
Voltage on ADC input (Vin)
Input RF level 5 dBm T
stg
(1) All voltage values are with respect to ground, unless otherwise noted. (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (3) In external regulator mode, VDDS2 and VDDS3 must be at the same potential as VDDS. (4) Including analog-capable DIO. (5) Each pin is referenced to a specific VDDSx (VDDS, VDDS2 or VDDS3). For a pin-to-VDDS mapping table, see Table 6-2.
(3)
and
(4)(5)
VDDR supplied by internal DC/DC regulator or internal GLDO. VDDS_DCDC connected to VDDS on PCB
External regulator mode (VDDS and VDDR pins connected on PCB)
Voltage scaling enabled –0.3 VDDS
Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9
Storage temperature –40 150 °C
(1)(2)
MIN MAX UNIT
–0.3 4.1 V
–0.3 2.25 V –0.3 VDDSx + 0.3, max 4.1 V
VVoltage scaling disabled, internal reference –0.3 1.49

5.2 ESD Ratings

VALUE UNIT
Human body model (HBM), per
V
ESD
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
Electrostatic discharge (RHB and RGZ packages)
ANSI/ESDA/JEDEC JS001 Charged device model (CDM), per JESD22-
(2)
C101
(1)
All pins ±2500 RF pins ±500
Non-RF pins ±500

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Ambient temperature –40 85 °C Operating supply
voltage (VDDS and VDDR), external regulator mode
Operating supply voltage VDDS
Operating supply voltages VDDS2 and VDDS3
Operating supply voltages VDDS2 and VDDS3
For operation in 1.8-V systems (VDDS and VDDR pins connected on PCB, internal DC/DC cannot be used)
For operation in battery-powered and 3.3-V systems (internal DC/DC can be used to minimize power consumption)
VDDS < 2.7 V 1.8 3.8 V
VDDS 2.7 V 1.9 3.8 V
1.7 1.95 V
1.8 3.8 V
V
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5.4 Power Consumption Summary

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reset. RESET_N pin asserted or VDDS below Power-on-Reset threshold
Shutdown. No clocks running, no retention 150 Standby. With RTC, CPU, RAM and (partial)
register retention. RCOSC_LF Standby. With RTC, CPU, RAM and (partial)
register retention. XOSC_LF Standby. With Cache, RTC, CPU, RAM and
(partial) register retention. RCOSC_LF
I
core
Core current consumption
Peripheral Current Consumption (Adds to core current I
Peripheral power domain Delta current with domain enabled 50 µA Serial power domain Delta current with domain enabled 13 µA
RF Core µDMA Delta current with clock enabled, module idle 165 µA
I
peri
Timers Delta current with clock enabled, module idle 113 µA I2C Delta current with clock enabled, module idle 12 µA I2S Delta current with clock enabled, module idle 36 µA SSI Delta current with clock enabled, module idle 93 µA UART Delta current with clock enabled, module idle 164 µA
(1) Single-ended RF mode is optimized for size and power consumption. Measured on CC2650EM-4XS. (2) Differential RF mode is optimized for RF performance. Measured on CC2650EM-5XD. (3) I
is not supported in Standby or Shutdown.
peri
Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF
Idle. Supply Systems and RAM powered. 650 Active. Core running CoreMark Radio RX
Radio RX Radio TX, 0-dBm output power Radio TX, 0-dBm output power Radio TX, 5-dBm output power
(1)
(2)
(1) (2) (2)
for each peripheral unit activated)
core
Delta current with power domain enabled, clock enabled, RF core idle
= 3.0 V with internal DC/DC converter, unless
DDS
(3)
100
1.5
1.7
6
6.2
1.45 mA +
31 µA/MHz
5.9
6.1
6.1
7.0
9.1
237 µA
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nA
µA
mA
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5.5 General Characteristics

Tc= 25°C, V
FLASH MEMORY
Supported flash erase cycles before
(1)
failure Maximum number of write operations
per row before erase Flash retention 105°C 11.4 Flash page/sector erase current Average delta current 12.6 mA
Flash page/sector size 4 KB Flash write current Average delta current, 4 bytes at a time 8.15 mA Flash page/sector erase time Flash write time
(1) Aborting flash during erase or program modes is not a safe operation. (2) Each row is 2048 bits (or 256 Bytes) wide. (3) This number is dependent on Flash aging and will increase over time and erase cycles.
= 3.0 V, unless otherwise noted.
DDS
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
100 k Cycles
write
(2)
83
operations
Years at
105°C
(3)
(3)
4 bytes at a time 8 µs
8 ms
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5.6 125-kbps Coded (Bluetooth 5) – RX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity
Receiver saturation
Frequency error tolerance
Data rate error tolerance
Data rate error tolerance
Co-channel rejection
Selectivity, ±1 MHz
Selectivity, ±2 MHz
Selectivity, ±3 MHz
Selectivity, ±4 MHz
Selectivity, ±6 MHz Alternate channel rejection,
(1)
±7 MHz
(1)
(1)
(1)
(1)
(1)
(1)
Selectivity, image frequency
Selectivity, image frequency
(1)
±1 MHz
Blocker rejection, ±8 MHz and
(1)
above Out-of-band blocking
(3)
Out-of-band blocking 2003 MHz to 2399 MHz –19 dBm Out-of-band blocking 2484 MHz to 2997 MHz –22 dBm
Intermodulation
(1) Numbers given as I/C dB. (2) X / Y, where X is +N MHz and Y is –N MHz. (3) Excluding one exception at F
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
–3
–3
Difference between the incoming carrier frequency and the internally generated carrier frequency
Difference between incoming data rate and the internally generated data rate (37-byte packets)
Difference between incoming data rate and the internally generated data rate (255-byte packets)
Wanted signal at –79 dBm, modulated interferer in channel, BER = 10
Wanted signal at –79 dBm, modulated interferer at ±1 MHz, BER = 10
–3
–3
Wanted signal at –79 dBm, modulated interferer at ±2 MHz, Image frequency is at –2 MHz, BER = 10
Wanted signal at –79 dBm, modulated interferer at ±3 MHz, BER = 10
Wanted signal at –79 dBm, modulated interferer at ±4 MHz, BER = 10
Wanted signal at –79 dBm, modulated interferer at ±6 MHz, BER = 10
Wanted signal at –79 dBm, modulated interferer at ±7 MHz, BER = 10
Wanted signal at –79 dBm, modulated interferer at
(1)
image frequency, BER = 10
–3
–3
–3
–3
–3
Note that Image frequency + 1 MHz is the Co­channel –1 MHz. Wanted signal at –79 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10
Wanted signal at –79 dBm, modulated interferer at ±8 MHz and above, BER = 10
–3
–3
30 MHz to 2000 MHz –40 dBm
Wanted signal at 2402 MHz, –76 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level
/ 2, per Bluetooth Specification.
wanted
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
–103 dBm
>5 dBm
–260 310 kHz
–260 260 ppm
–140 140 ppm
–3 dB
(2)
9 / 5
(2)
–3
43 / 32
47 / 42
46 / 47
49 / 46
50 / 47
(2)
(2)
(2)
(2)
32 dB
(2)
5 / 32
>46 dB
–42 dBm
dB
dB
dB
dB
dB
dB
dB
14
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5.7 125-kbps Coded (Bluetooth 5) – TX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power, highest setting
Output power, highest setting Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm
Spurious emission conducted measurement
(1)
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
Differential mode, delivered to a single-ended 50-Ω load through a balun
Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load
f < 1 GHz, outside restricted bands –43 dBm f < 1 GHz, restricted bands ETSI –65 dBm f < 1 GHz, restricted bands FCC –71 dBm f > 1 GHz, including harmonics –46 dBm
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
5 dBm
2 dBm

5.8 500-kbps Coded (Bluetooth 5) – RX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity
Receiver saturation
Frequency error tolerance
Data rate error tolerance
Data rate error tolerance
Co-channel rejection
Selectivity, ±1 MHz
Selectivity, ±2 MHz
Selectivity, ±3 MHz
Selectivity, ±4 MHz
Selectivity, ±6 MHz Alternate channel rejection,
(1)
±7 MHz
(1)
(1)
(1)
(1)
(1)
(1)
Selectivity, image frequency
Selectivity, image frequency
(1)
±1 MHz
Blocker rejection, ±8 MHz and
(1)
above Out-of-band blocking
(3)
Out-of-band blocking 2003 MHz to 2399 MHz –19 dBm Out-of-band blocking 2484 MHz to 2997 MHz –19 dBm
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
–3
–3
Difference between the incoming carrier frequency and the internally generated carrier frequency
Difference between incoming data rate and the internally generated data rate (37-byte packets)
Difference between incoming data rate and the internally generated data rate (255-byte packets)
Wanted signal at –72 dBm, modulated interferer in channel, BER = 10
Wanted signal at –72 dBm, modulated interferer at ±1 MHz, BER = 10
–3
–3
Wanted signal at –72 dBm, modulated interferer at ±2 MHz, Image frequency is at –2 MHz, BER = 10
Wanted signal at –72 dBm, modulated interferer at ±3 MHz, BER = 10
Wanted signal at –72 dBm, modulated interferer at ±4 MHz, BER = 10
Wanted signal at –72 dBm, modulated interferer at ±6 MHz, BER = 10
Wanted signal at –72 dBm, modulated interferer at ±7 MHz, BER = 10
Wanted signal at –72 dBm, modulated interferer at
(1)
image frequency, BER = 10
–3
–3
–3
–3
–3
Note that Image frequency + 1 MHz is the Co­channel –1 MHz. Wanted signal at –72 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10
Wanted signal at –72 dBm, modulated interferer at ±8 MHz and above, BER = 10
–3
–3
30 MHz to 2000 MHz –35 dBm
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
–101 dBm
>5 dBm
–240 240 kHz
–500 500 ppm
–310 330 ppm
–5 dB
(2)
9 / 5
(2)
–3
41 / 31
44 / 41
44 / 44
44 / 44
44 / 44
(2)
(2)
(2)
(2)
31 dB
(2)
5 / 41
44 dB
dB
dB
dB
dB
dB
dB
dB
(1) Numbers given as I/C dB. (2) X / Y, where X is +N MHz and Y is –N MHz. (3) Excluding one exception at F
/ 2, per Bluetooth Specification.
wanted
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500-kbps Coded (Bluetooth 5) – RX (continued)
Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Intermodulation
Wanted signal at 2402 MHz, –69 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
–37 dBm

5.9 500-kbps Coded (Bluetooth 5) – TX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power, highest setting
Output power, highest setting Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm
Spurious emission conducted measurement
(1)
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
Differential mode, delivered to a single-ended 50-Ω load through a balun
Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load
f < 1 GHz, outside restricted bands –43 dBm f < 1 GHz, restricted bands ETSI –65 dBm f < 1 GHz, restricted bands FCC –71 dBm f > 1 GHz, including harmonics –46 dBm
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
5 dBm
2 dBm

5.10 1-Mbps GFSK (Bluetooth low energy) – RX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity
Receiver sensitivity
Receiver saturation
Receiver saturation
Frequency error tolerance
Data rate error tolerance
Co-channel rejection
Selectivity, ±1 MHz
Selectivity, ±2 MHz
Selectivity, ±3 MHz
Selectivity, ±4 MHz
(1)
(1)
(1)
(1)
(1)
Selectivity, ±5 MHz or more
Selectivity, image frequency Selectivity, image frequency
(1)
±1 MHz
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10
–3
–3
–3
–3
Difference between the incoming carrier frequency and the internally generated carrier frequency
Difference between incoming data rate and the internally generated data rate
Wanted signal at –67 dBm, modulated interferer in channel, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±1 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±2 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±3 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10
Wanted signal at –67 dBm, modulated interferer at
(1)
±5 MHz, BER = 10 Wanted signal at –67 dBm, modulated interferer at
(1)
image frequency, BER = 10
–3
–3
–3
–3
–3
–3
–3
Wanted signal at –67 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10
–3
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
–97 dBm
–96 dBm
4 dBm
0 dBm
–350 350 kHz
–750 750 ppm
–6 dB
(2)
7 / 3
(2)
34 / 25
(2)
38 / 26
(2)
42 / 29
32 dB
25 dB
(2)
3 / 26
dB
dB
dB
dB
dB
(1) Numbers given as I/C dB. (2) X / Y, where X is +N MHz and Y is –N MHz.
16
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1-Mbps GFSK (Bluetooth low energy) – RX (continued)
Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Out-of-band blocking Out-of-band blocking 2003 MHz to 2399 MHz –5 dBm Out-of-band blocking 2484 MHz to 2997 MHz –8 dBm Out-of-band blocking 3000 MHz to 12.75 GHz –10 dBm
Intermodulation
Spurious emissions, 30 to 1000 MHz
Spurious emissions, 1 to 12.75 GHz
RSSI dynamic range 70 dB RSSI accuracy ±4 dB
(3) Excluding one exception at F
(3)
30 MHz to 2000 MHz –20 dBm
Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66
/ 2, per Bluetooth Specification.
wanted
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
–34 dBm
–71 dBm
–62 dBm

5.11 1-Mbps GFSK (Bluetooth low energy) – TX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power, highest setting
Output power, highest setting Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm
Spurious emission conducted measurement
(1)
(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2
(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).
Differential mode, delivered to a single-ended 50-Ω load through a balun
Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load
f < 1 GHz, outside restricted bands –43 dBm f < 1 GHz, restricted bands ETSI –65 dBm f < 1 GHz, restricted bands FCC –71 dBm f > 1 GHz, including harmonics –46 dBm
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
5 dBm
2 dBm

5.12 2-Mbps GFSK (Bluetooth 5) – RX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity
Receiver saturation
Frequency error tolerance
Data rate error tolerance
Co-channel rejection
Selectivity, ±2 MHz
(1)
(1)
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10
–3
–3
Difference between the incoming carrier frequency and the internally generated carrier frequency
Difference between incoming data rate and the internally generated data rate
Wanted signal at –67 dBm, modulated interferer in channel, BER = 10
–3
Wanted signal at –67 dBm, modulated interferer at ±2 MHz, Image frequency is at –2 MHz BER = 10
= 3.0 V, fRF= 2440 MHz, unless otherwise noted.
DDS
–90 dBm
3 dBm
–300 500 kHz
–1000 1000 ppm
–7 dB
(2)
–3
8 / 4
dB
(1) Numbers given as I/C dB. (2) X / Y, where X is +N MHz and Y is –N MHz.
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