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CC2640 SimpleLink™ Bluetooth®Wireless MCU

1 Device Overview

1.1 Features

• Microcontroller – Powerful ARM®Cortex®-M3 – EEMBC CoreMark®Score: 142 – Up to 48-MHz Clock Speed – 128KB of In-System Programmable Flash – 8KB of SRAM for Cache – 20KB of Ultralow-Leakage SRAM – 2-Pin cJTAG and JTAG Debugging – Supports Over-The-Air Upgrade (OTA)

• Ultralow-Power Sensor Controller – Can Run Autonomous From the Rest of the

System – 16-Bit Architecture – 2KB of Ultralow-Leakage SRAM for Code and

Data

• Efficient Code Size Architecture, Placing Drivers,

Bluetooth®Low Energy Controller, and Bootloader

in ROM

• RoHS-Compliant Packages – 4-mm × 4-mm RSM VQFN32 (10 GPIOs) – 5-mm × 5-mm RHB VQFN32 (15 GPIOs) – 7-mm × 7-mm RGZ VQFN48 (31 GPIOs)

• Peripherals – All Digital Peripheral Pins Can Be Routed to

Any GPIO

– Four General-Purpose Timer Modules

(Eight 16-Bit or Four 32-Bit Timers, PWM Each)

– 12-Bit ADC, 200-ksamples/s, 8-Channel Analog

MUX – Continuous Time Comparator – Ultralow-Power Analog Comparator – Programmable Current Source – UART – 2× SSI (SPI, MICROWIRE, TI) – I2C – I2S – Real-Time Clock (RTC) – AES-128 Security Module – True Random Number Generator (TRNG) – 10, 15, or 31 GPIOs, Depending on Package

Option – Support for Eight Capacitive-Sensing Buttons – Integrated Temperature Sensor

• External System – On-Chip internal DC-DC Converter

CC2640

SWRS176B –FEBRUARY 2015–REVISED JULY 2016

– Very Few External Components – Seamless Integration With the SimpleLink™

CC2590 and CC2592 Range Extenders

– Pin Compatible With the SimpleLink CC13xx in

4-mm × 4-mm and 5-mm × 5-mm VQFN Packages

• Low Power – Wide Supply Voltage Range

• Normal Operation: 1.8 to 3.8 V

• External Regulator Mode: 1.7 to 1.95 V – Active-Mode RX: 5.9 mA – Active-Mode TX at 0 dBm: 6.1 mA – Active-Mode TX at +5 dBm: 9.1 mA – Active-Mode MCU: 61 µA/MHz – Active-Mode MCU: 48.5 CoreMark/mA – Active-Mode Sensor Controller: 8.2 µA/MHz – Standby: 1 µA (RTC Running and RAM/CPU

Retention)

– Shutdown: 100 nA (Wake Up on External

Events)

• RF Section – 2.4-GHz RF Transceiver Compatible With

Bluetooth Low Energy (BLE) 4.2 Specification

– Excellent Receiver Sensitivity (–97 dBm for

BLE), Selectivity, and Blocking Performance – Link budget of 102 dB for BLE – Programmable Output Power up to +5 dBm – Single-Ended or Differential RF Interface – Suitable for Systems Targeting Compliance With

Worldwide Radio Frequency Regulations

• ETSI EN 300 328 (Europe)

• EN 300 440 Class 2 (Europe)

• FCC CFR47 Part 15 (US)

• ARIB STD-T66 (Japan)

• Tools and Development Environment – Full-Feature and Low-Cost Development Kits – Multiple Reference Designs for Different RF

Configurations – Packet Sniffer PC Software – Sensor Controller Studio – SmartRF™ Studio – SmartRF Flash Programmer 2 – IAR Embedded Workbench®for ARM – Code Composer Studio™

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.

CC2640

SWRS176B –FEBRUARY 2015–REVISED JULY 2016

1.2 Applications

• Home and Building Automation – Connected Appliances – Lighting – Locks – Gateways – Security Systems

• Industrial – Logistics – Production and Manufacturing – Automation – Asset Tracking and Management – Remote Display – Cable Replacement – HMI – Access Control

• Retail – Beacons – Advertising – ESL and Price Tags – Point of Sales and Payment Systems

www.ti.com

• Health and Medical – Thermometers – SpO2 – Blood Glucose and Pressure Meters – Weight Scales – Vitals Monitoring – Hearing Aids

• Sports and Fitness – Activity Monitors and Fitness Trackers – Heart Rate Monitors – Running Sensors – Biking Sensors – Sports Watches – Gym Equipment – Team Sports Equipment

• HID – Remote Controls – Keyboards and Mice – Gaming

• Accessories – Toys – Trackers – Luggage Tags – Wearables

1.3 Description

The CC2640 device is a wireless MCU targeting Bluetooth applications. The device is a member of the CC26xx family of cost-effective, ultralow power, 2.4-GHz RF devices. Very

low active RF and MCU current and low-power mode current consumption provide excellent battery lifetime and allow for operation on small coin cell batteries and in energy-harvesting applications.

The CC2640 device contains a 32-bit ARM Cortex-M3 processor that runs at 48 MHz as the main processor and a rich peripheral feature set that includes a unique ultralow power sensor controller. This sensor controller is ideal for interfacing external sensors and for collecting analog and digital data autonomously while the rest of the system is in sleep mode. Thus, the CC2640 device is ideal for a wide range of applications where long battery lifetime, small form factor, and ease of use is important.

The Bluetooth Low Energy controller is embedded into ROM and runs partly on an ARM Cortex-M0 processor. This architecture improves overall system performance and power consumption and frees up flash memory for the application.

The Bluetooth stack is available free of charge from www.ti.com.

Device Information

PART NUMBER PACKAGE BODY SIZE (NOM)

CC2640F128RGZ VQFN (48) 7.00 mm × 7.00 mm CC2640F128RHB VQFN (32) 5.00 mm × 5.00 mm CC2640F128RSM VQFN (32) 4.00 mm × 4.00 mm

(1) For more information, see Section 9, Mechanical Packaging and Orderable Information.

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SimpleLinkTM CC26xx wireless MCU

Main CPU

128KB

Flash

Sensor controller

cJTAG

20KB

SRAM

ROM

ARM

Cortex®-M3

DC-DC converter

RF core

ARM

Cortex®-M0

DSP modem

4KB

SRAM

ROM

Sensor controller

engine

2x comparator

12-bit ADC, 200 ks/s

Constant current source

SPI-I2C digital sensor IF

2KB SRAM

Time-to-digital converter

General peripherals / modules

4× 32-bit Timers

2× SSI (SPI, µW, TI)

Watchdog timer

Temp. / batt. monitor

RTC

I2C

UART

I2S

10 / 15 / 31 GPIOs

AES

32 ch. µDMA

ADC

Digital PLL

TRNG

ADC

8KB

cache

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1.4 Functional Block Diagram

Figure 1-1 shows a block diagram for the CC2640.

CC2640

SWRS176B –FEBRUARY 2015–REVISED JULY 2016

Figure 1-1. Block Diagram

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SWRS176B –FEBRUARY 2015–REVISED JULY 2016

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1 Device Overview ......................................... 1

1.1 Features .............................................. 1

1.2 Applications........................................... 2

1.3 Description............................................ 2

1.4 Functional Block Diagram ............................ 3

2 Revision History ......................................... 5

3 Device Comparison ..................................... 6

3.1 Related Products ..................................... 6

4 Terminal Configuration and Functions.............. 7

4.1 Pin Diagram – RGZ Package ........................ 7

4.2 Signal Descriptions – RGZ Package ................. 7

4.3 Pin Diagram – RHB Package ........................ 9

4.4 Signal Descriptions – RHB Package ................. 9

4.5 Pin Diagram – RSM Package....................... 11

4.6 Signal Descriptions – RSM Package ............... 11

5 Specifications........................................... 13

5.1 Absolute Maximum Ratings......................... 13

5.2 ESD Ratings ........................................ 13

5.3 Recommended Operating Conditions............... 13

5.4 Power Consumption Summary...................... 14

5.5 General Characteristics ............................. 14

5.6 1-Mbps GFSK (Bluetooth low energy Technology) –

RX ................................................... 15

5.7 1-Mbps GFSK (Bluetooth low energy Technology) –

TX ................................................... 16

5.8 2-Mbps GFSK (Bluetooth 5) – RX .................. 16

5.9 2-Mbps GFSK (Bluetooth 5) – TX................... 17

5.10 5-Mbps (Proprietary) – RX .......................... 17

5.11 5-Mbps (Proprietary) – TX .......................... 18

5.12 24-MHz Crystal Oscillator (XOSC_HF) ............. 18

5.13 32.768-kHz Crystal Oscillator (XOSC_LF).......... 18

5.14 48-MHz RC Oscillator (RCOSC_HF) ............... 19

5.15 32-kHz RC Oscillator (RCOSC_LF)................. 19

5.16 ADC Characteristics................................. 19

5.17 Temperature Sensor ................................ 21

5.18 Battery Monitor...................................... 21

5.19 Continuous Time Comparator....................... 21

5.20 Low-Power Clocked Comparator ................... 22

5.21 Programmable Current Source ..................... 22

5.22 Synchronous Serial Interface (SSI) ................ 22

5.23 DC Characteristics .................................. 24

5.24 Thermal Resistance Characteristics ................ 25

5.25 Timing Requirements ............................... 26

5.26 Switching Characteristics ........................... 26

5.27 Typical Characteristics .............................. 27

6 Detailed Description ................................... 31

6.1 Overview ............................................ 31

6.2 Functional Block Diagram........................... 31

6.3 Main CPU ........................................... 32

6.4 RF Core ............................................. 32

6.5 Sensor Controller ................................... 33

6.6 Memory.............................................. 34

6.7 Debug ............................................... 34

6.8 Power Management................................. 35

6.9 Clock Systems ...................................... 36

6.10 General Peripherals and Modules .................. 36

6.11 Voltage Supply Domains............................ 37

6.12 System Architecture................................. 37

7 Application, Implementation, and Layout ......... 38

7.1 Application Information.............................. 38

7.2 5 × 5 External Differential (5XD) Application Circuit

...................................................... 40

7.3 4 × 4 External Single-ended (4XS) Application

Circuit ............................................... 42

8 Device and Documentation Support ............... 44

8.1 Device Nomenclature ............................... 44

8.2 Tools and Software ................................. 45

8.3 Documentation Support ............................. 46

8.4 Texas Instruments Low-Power RF Website ........ 46

8.5 Low-Power RF eNewsletter ......................... 46

8.6 Community Resources .............................. 46

8.7 Additional Information ............................... 47

8.8 Trademarks.......................................... 47

8.9 Electrostatic Discharge Caution..................... 47

8.10 Export Control Notice ............................... 47

8.11 Glossary............................................. 47

9 Mechanical Packaging and Orderable

Information .............................................. 47

9.1 Packaging Information .............................. 47

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2 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from October 23, 2015 to July 5, 2016 Page

• Added split VDDS supply rail feature .............................................................................................. 1

• Added 5-Mbps proprietary mode ................................................................................................... 1

• Added option for up to 80-Ω ESR when C

• Added tolerance for RCOSC_LF and RTC accuracy content ................................................................ 19

• Updated the Soc ADC internal voltage reference specification in Section 5.16 ........................................... 19

• Moved all SSI parameters to Section 5.22 ...................................................................................... 22

• Added 0-dBm setting to the TX Current Consumption vs Supply Voltage (VDDS) graph ................................ 27

• Changed Figure 5-11, Receive Mode Current vs Supply Voltage (VDDS) ................................................. 27

• Added Figure 5-21, Supply Current vs Temperature .......................................................................... 28

Changes from February 15, 2015 to October 22, 2015 Page

• Removed RHB package option from CC2620 .................................................................................... 6

• Added motional inductance recommendation to the 24-MHz XOSC table ................................................. 18

• Added SPI timing parameters ..................................................................................................... 22

• Added VOH and VOL min and max values for 4-mA and 8-mA load ....................................................... 24

• Added min and max values for VIH and VIL .................................................................................... 25

• Added BLE Sensitivity vs Channel Frequency .................................................................................. 27

• Added RF Output Power vs Channel Frequency ............................................................................... 27

• Added Figure 5-11, Receive Mode Current vs Supply Voltage (VDDS)..................................................... 27

• Changed Figure 5-20, SoC ADC ENOB vs Sampling Frequency (Input Frequency = FS / 10).......................... 28

• Clarified Brown Out Detector status and functionality in the Power Modes table. ......................................... 35

• Added application circuit schematics and layout for 5XD and 4XS .......................................................... 38

is 6 pF or lower .................................................................. 18

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3 Device Comparison

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Table 3-1. Device Family Overview

DEVICE PHY SUPPORT

CC2650F128xxx Multi-Protocol CC2640F128xxx Bluetooth low energy (Normal) 128 20 31, 15, 10 RGZ, RHB, RSM CC2630F128xxx IEEE 802.15.4 ( ZigBee®/6LoWPAN) 128 20 31, 15, 10 RGZ, RHB, RSM CC2620F128xxx IEEE 802.15.4 (RF4CE) 128 20 31, 10 RGZ, RSM

(1) Package designator replaces the xxx in device name to form a complete device name, RGZ is 7-mm × 7-mm VQFN48, RHB is

5-mm × 5-mm VQFN32, and RSM is 4-mm × 4-mm VQFN32.

(2) The CC2650 device supports all PHYs and can be reflashed to run all the supported standards.

(2)

FLASH

(KB)

128 20 31, 15, 10 RGZ, RHB, RSM

RAM (KB) GPIO PACKAGE

3.1 Related Products

Wireless Connectivity The wireless connectivity portfolio offers a wide selection of low power RF

solutions suitable for a broad range of application. The offerings range from fully customized solutions to turn key offerings with pre-certified hardware and software (protocol).

Sub-1 GHz Long-range, low power wireless connectivity solutions are offered in a wide range of Sub-1

GHz ISM bands.

Companion Products Review products that are frequently purchased or used in conjunction with this

product.

SimpleLink™ CC2650 Wireless MCU LaunchPad™ Kit The CC2650 LaunchPad kit brings easy

Bluetooth® Smart connectivity to the LaunchPad kit ecosystem with the SimpleLink ultra-low power CC26xx family of devices. This LaunchPad kit also supports development for multiprotocol support for the SimpleLink multi-standard CC2650 wireless MCU and the rest of CC26xx family of products: CC2630 wireless MCU for ZigBee®/6LoWPAN and CC2640 wireless MCU for Bluetooth®Smart.

Reference Designs for CC2640 TI Designs Reference Design Library is a robust reference design library

spanning analog, embedded processor and connectivity. Created by TI experts to help you jump-start your system design, all TI Designs include schematic or block diagrams, BOMs and design files to speed your time to market. Search and download designs at

ti.com/tidesigns.

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DIO_25 38

DIO_24 37

DCDC_SW33

DIO_18

RESET_N35

DIO_2336

X32K_Q2 4

X32K_Q1 3

RF_N 2

RF_P 1

DIO_2232

DIO_2131

DIO_2030

DIO_1929

DIO_0 5

DIO_1 6

DIO_2 7

JTAG_TCKC25

41 42 43 44

DIO_15

DIO_14

18 17

VDDR 45

46 47

VDDR_RF 48

16 15 14 13

DIO_17

DIO_16

VDDS_DCDC

DIO_26

DIO_12

DIO_13

VDDS2

DIO_11 DIO_10

DIO_5

DIO_6

DIO_7

DIO_3

DIO_4

X24M_P

X24M_N

DIO_8

DIO_9

DIO_28

VDDS3

DCOUPL

JTAG_TMSC

DIO_29 DIO_30

DIO_27

VDDS

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4 Terminal Configuration and Functions

4.1 Pin Diagram – RGZ Package

CC2640

SWRS176B –FEBRUARY 2015–REVISED JULY 2016

Note: I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities.

Figure 4-1. RGZ Package

48-Pin VQFN

(7-mm × 7-mm) Pinout, 0.5-mm Pitch

4.2 Signal Descriptions – RGZ Package

Table 4-1. Signal Descriptions – RGZ Package

NAME NO. TYPE DESCRIPTION

DCDC_SW 33 Power Output from internal DC-DC DCOUPL 23 Power 1.27-V regulated digital-supply decoupling capacitor DIO_0 5 Digital I/O GPIO, Sensor Controller DIO_1 6 Digital I/O GPIO, Sensor Controller DIO_2 7 Digital I/O GPIO, Sensor Controller DIO_3 8 Digital I/O GPIO, Sensor Controller DIO_4 9 Digital I/O GPIO, Sensor Controller DIO_5 10 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_6 11 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_7 12 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_8 14 Digital I/O GPIO DIO_9 15 Digital I/O GPIO DIO_10 16 Digital I/O GPIO

(1) See technical reference manual (listed in Section 8.3) for more details. (2) Do not supply external circuitry from this pin.

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SWRS176B –FEBRUARY 2015–REVISED JULY 2016

Table 4-1. Signal Descriptions – RGZ Package (continued)

NAME NO. TYPE DESCRIPTION

DIO_11 17 Digital I/O GPIO DIO_12 18 Digital I/O GPIO DIO_13 19 Digital I/O GPIO DIO_14 20 Digital I/O GPIO DIO_15 21 Digital I/O GPIO DIO_16 26 Digital I/O GPIO, JTAG_TDO, high-drive capability DIO_17 27 Digital I/O GPIO, JTAG_TDI, high-drive capability DIO_18 28 Digital I/O GPIO DIO_19 29 Digital I/O GPIO DIO_20 30 Digital I/O GPIO DIO_21 31 Digital I/O GPIO DIO_22 32 Digital I/O GPIO DIO_23 36 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_24 37 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_25 38 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_26 39 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_27 40 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_28 41 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_29 42 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_30 43 Digital/Analog I/O GPIO, Sensor Controller, Analog JTAG_TMSC 24 Digital I/O JTAG TMSC, high-drive capability JTAG_TCKC 25 Digital I/O JTAG TCKC RESET_N 35 Digital input Reset, active-low. No internal pullup.

RF_P 1 RF I/O

RF_N 2 RF I/O VDDR 45 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC

VDDR_RF 48 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC VDDS 44 Power 1.8-V to 3.8-V main chip supply VDDS2 13 Power 1.8-V to 3.8-V DIO supply VDDS3 22 Power 1.8-V to 3.8-V DIO supply VDDS_DCDC 34 Power 1.8-V to 3.8-V DC-DC supply X32K_Q1 3 Analog I/O 32-kHz crystal oscillator pin 1 X32K_Q2 4 Analog I/O 32-kHz crystal oscillator pin 2 X24M_N 46 Analog I/O 24-MHz crystal oscillator pin 1 X24M_P 47 Analog I/O 24-MHz crystal oscillator pin 2 EGP Power Ground – Exposed Ground Pad

(3) If internal DC-DC is not used, this pin is supplied internally from the main LDO. (4) If internal DC-DC is not used, this pin must be connected to VDDR for supply from the main LDO.

Positive RF input signal to LNA during RX Positive RF output signal to PA during TX

Negative RF input signal to LNA during RX Negative RF output signal to PA during TX

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28 29

212022

13 12

453

26 15

25 16

31 10 32 9

232

241

178

DIO_10

DIO_7

DIO_9

DIO_8

DCDC_SW

RESET_N

VDDS_DCDC

DIO_11

VDDR_RF

X24M_N X24M_P

VDDR

VDDS

DIO_13 DIO_14

DIO_12

DIO_3

JTAG_TMSC

DIO_4

DCOUPL VDDS2

JTAG_TCKC

DIO_5

DIO_6

RF_P

RF_N

RX_TX

DIO_0

DIO_1

DIO_2

X32K_Q1

X32K_Q2

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4.3 Pin Diagram – RHB Package

CC2640

SWRS176B –FEBRUARY 2015–REVISED JULY 2016

Note: I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities.

Figure 4-2. RHB Package

32-Pin VQFN

(5-mm × 5-mm) Pinout, 0.5-mm Pitch

4.4 Signal Descriptions – RHB Package

Table 4-2. Signal Descriptions – RHB Package

NAME NO. TYPE DESCRIPTION

DCDC_SW 17 Power Output from internal DC-DC DCOUPL 12 Power 1.27-V regulated digital-supply decoupling DIO_0 6 Digital I/O GPIO, Sensor Controller DIO_1 7 Digital I/O GPIO, Sensor Controller DIO_2 8 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_3 9 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_4 10 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_5 15 Digital I/O GPIO, High drive capability, JTAG_TDO DIO_6 16 Digital I/O GPIO, High drive capability, JTAG_TDI DIO_7 20 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_8 21 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_9 22 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_10 23 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_11 24 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_12 25 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_13 26 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_14 27 Digital/Analog I/O GPIO, Sensor Controller, Analog JTAG_TMSC 13 Digital I/O JTAG TMSC, high-drive capability JTAG_TCKC 14 Digital I/O JTAG TCKC

(1) See technical reference manual (listed in Section 8.3) for more details. (2) Do not supply external circuitry from this pin.

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SWRS176B –FEBRUARY 2015–REVISED JULY 2016

Table 4-2. Signal Descriptions – RHB Package (continued)

NAME NO. TYPE DESCRIPTION

RESET_N 19 Digital input Reset, active-low. No internal pullup. RF_N 2 RF I/O

RF_P 1 RF I/O RX_TX 3 RF I/O Optional bias pin for the RF LNA

VDDR 29 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC VDDR_RF 32 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC VDDS 28 Power 1.8-V to 3.8-V main chip supply VDDS2 11 Power 1.8-V to 3.8-V GPIO supply VDDS_DCDC 18 Power 1.8-V to 3.8-V DC-DC supply X32K_Q1 4 Analog I/O 32-kHz crystal oscillator pin 1 X32K_Q2 5 Analog I/O 32-kHz crystal oscillator pin 2 X24M_N 30 Analog I/O 24-MHz crystal oscillator pin 1 X24M_P 31 Analog I/O 24-MHz crystal oscillator pin 2 EGP Power Ground – Exposed Ground Pad

(3) If internal DC-DC is not used, this pin is supplied internally from the main LDO. (4) If internal DC-DC is not used, this pin must be connected to VDDR for supply from the main LDO.

Negative RF input signal to LNA during RX Negative RF output signal to PA during TX

Positive RF input signal to LNA during RX Positive RF output signal to PA during TX

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28 29

212022

13 12

453

26 15

25 16

31 10 32 9

232

241

178

DIO_6

VSS

DIO_5

RESET_N

VSS

VDDS_DCDC

DCDC_SW

DIO_7

VDDR_RF

X24M_N X24M_P

VSS

VDDR

DIO_9

VDDS

DIO_8

DIO_1

JTAG_TMSC

DIO_2

DCOUPL VDDS2

JTAG_TCKC

DIO_3

DIO_4

RF_P

RF_N

VSS

X32K_Q2

VSS

DIO_0

RX_TX

X32K_Q1

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4.5 Pin Diagram – RSM Package

CC2640

SWRS176B –FEBRUARY 2015–REVISED JULY 2016

Note: I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog capabilities.

Figure 4-3. RSM Package

32-Pin VQFN

(4-mm × 4-mm) Pinout, 0.4-mm Pitch

4.6 Signal Descriptions – RSM Package

Table 4-3. Signal Descriptions – RSM Package

NAME NO. TYPE DESCRIPTION

DCDC_SW 18 Power DCOUPL 12 Power 1.27-V regulated digital-supply decoupling capacitor

DIO_0 8 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_1 9 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_2 10 Digital I/O GPIO, Sensor Controller, high-drive capability DIO_3 15 Digital I/O GPIO, High drive capability, JTAG_TDO DIO_4 16 Digital I/O GPIO, High drive capability, JTAG_TDI DIO_5 22 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_6 23 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_7 24 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_8 25 Digital/Analog I/O GPIO, Sensor Controller, Analog DIO_9 26 Digital/Analog I/O GPIO, Sensor Controller, Analog JTAG_TMSC 13 Digital I/O JTAG TMSC JTAG_TCKC 14 Digital I/O JTAG TCKC RESET_N 21 Digital Input Reset, active-low. No internal pullup.

RF_N 2 RF I/O

RF_P 1 RF I/O

(1) See technical reference manual (listed in Section 8.3) for more details. (2) Do not supply external circuitry from this pin.

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Output from internal DC-DC. (1.7-V to 1.95-V operation)

Negative RF input signal to LNA during RX Negative RF output signal to PA during TX

Positive RF input signal to LNA during RX Positive RF output signal to PA during TX

(1)

. Tie to ground for external regulator mode

(2)

CC2640

SWRS176B –FEBRUARY 2015–REVISED JULY 2016

Table 4-3. Signal Descriptions – RSM Package (continued)

NAME NO. TYPE DESCRIPTION

RX_TX 4 RF I/O Optional bias pin for the RF LNA VDDR 28 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC. VDDR_RF 32 Power 1.7-V to 1.95-V supply, typically connect to output of internal DC-DC VDDS 27 Power 1.8-V to 3.8-V main chip supply VDDS2 11 Power 1.8-V to 3.8-V GPIO supply

VDDS_DCDC 19 Power

VSS

3, 7, 17, 20,

Power

1.8-V to 3.8-V DC-DC supply. Tie to ground for external regulator mode (1.7-V to 1.95-V operation).

Ground

X32K_Q1 5 Analog I/O 32-kHz crystal oscillator pin 1 X32K_Q2 6 Analog I/O 32-kHz crystal oscillator pin 2 X24M_N 30 Analog I/O 24-MHz crystal oscillator pin 1 X24M_P 31 Analog I/O 24-MHz crystal oscillator pin 2 EGP Power Ground – Exposed Ground Pad

(3) If internal DC-DC is not used, this pin is supplied internally from the main LDO. (4) If internal DC-DC is not used, this pin must be connected to VDDR for supply from the main LDO.

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SWRS176B –FEBRUARY 2015–REVISED JULY 2016

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

Supply voltage (VDDS, VDDS2, and VDDS3)

Supply voltage (VDDS VDDR)

Voltage on any digital pin Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P –0.3 VDDR + 0.3, max 2.25 V

Voltage on ADC input (Vin)

Input RF level 5 dBm T

stg

(1) All voltage values are with respect to ground, unless otherwise noted. (2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (3) In external regulator mode, VDDS2 and VDDS3 must be at the same potential as VDDS. (4) Including analog-capable DIO. (5) Each pin is referenced to a specific VDDSx (VDDS, VDDS2 or VDDS3). For a pin-to-VDDS mapping table, see Table 6-3.

(3)

and

(4)(5)

VDDR supplied by internal DC-DC regulator or internal GLDO. VDDS_DCDC connected to VDDS on PCB.

External regulator mode (VDDS and VDDR pins connected on PCB)

Voltage scaling enabled –0.3 VDDS

Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9

Storage temperature –40 150 °C

(1)(2)

MIN MAX UNIT

–0.3 4.1 V

–0.3 2.25 V –0.3 VDDSx + 0.3, max 4.1 V

VVoltage scaling disabled, internal reference –0.3 1.49

5.2 ESD Ratings

VALUE UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC

(1)

ESD

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Electrostatic discharge (ESD) performance

JS001

Charged device model (CDM), per JESD22-C101

(2)

All pins ±2500 RF pins ±750

Non-RF pins ±750

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN MAX UNIT

Ambient temperature range –40 85 °C Operating supply voltage

(VDDS and VDDR), external regulator mode

Operating supply voltage VDDS Operating supply voltages

VDDS2 and VDDS3

For operation in 1.8-V systems (VDDS and VDDR pins connected on PCB, internal DCDC cannot be used)

For operation in battery-powered and 3.3-V systems (internal DC-DC can be used to minimize power consumption)

1.7 1.95 V

1.8 3.8 V

0.7 × VDDS, min 1.8 3.8 V

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5.4 Power Consumption Summary

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Reset. RESET_N pin asserted or VDDS below Power-on-Reset threshold

Shutdown. No clocks running, no retention 150 Standby. With RTC, CPU, RAM and (partial)

(partial) register retention. RCOSC_LF

core

Peripheral Current Consumption (Adds to core current I

peri

(1) Single-ended RF mode is optimized for size and power consumption. Measured on CC2650EM-4XS. (2) Differential RF mode is optimized for RF performance. Measured on CC2650EM-5XD. (3) I

Core current consumption

Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF

Idle. Supply Systems and RAM powered. 550 Active. Core running CoreMark Radio RX

Radio RX Radio TX, 0-dBm output power Radio TX, 5-dBm output power

(1)

(2)

(1) (2)

for each peripheral unit activated)

core

Peripheral power domain Delta current with domain enabled 20 µA Serial power domain Delta current with domain enabled 13 µA

RF Core

Delta current with power domain enabled, clock

enabled, RF core idle µDMA Delta current with clock enabled, module idle 130 µA Timers Delta current with clock enabled, module idle 113 µA I2C Delta current with clock enabled, module idle 12 µA I2S Delta current with clock enabled, module idle 36 µA SSI Delta current with clock enabled, module idle 93 µA UART Delta current with clock enabled, module idle 164 µA

is not supported in Standby or Shutdown.

peri

= 3.0 V with internal DC-DC converter, unless

DDS

(3)

100

1.2

2.5

2.7

1.45 mA +

31 µA/MHz

5.9

6.1

9.1

237 µA

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µA

5.5 General Characteristics

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

FLASH MEMORY

Supported flash erase cycles before failure

Flash page/sector erase current Average delta current 12.6 mA Flash page/sector size 4 KB Flash write current Average delta current, 4 bytes at a time 8.15 mA Flash page/sector erase time Flash write time

(1)

(1) This number is dependent on Flash aging and will increase over time and erase cycles.

(1)

4 bytes at a time 8 µs

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= 3.0 V, unless otherwise noted.

DDS

100 k Cycles

8 ms

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SWRS176B –FEBRUARY 2015–REVISED JULY 2016

5.6 1-Mbps GFSK (Bluetooth low energy Technology) – RX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Receiver sensitivity

Receiver saturation

Frequency error tolerance

Data rate error tolerance

Co-channel rejection

Selectivity, ±1 MHz

Selectivity, ±2 MHz

Selectivity, ±3 MHz

Selectivity, ±4 MHz

(1)

Selectivity, ±5 MHz or more

Selectivity, Image frequency

(1)

±1 MHz Out-of-band blocking

(3)

Out-of-band blocking 2003 MHz to 2399 MHz –5 dBm Out-of-band blocking 2484 MHz to 2997 MHz –8 dBm Out-of-band blocking 3000 MHz to 12.75 GHz –8 dBm

Intermodulation

Spurious emissions, 30 to 1000 MHz

Spurious emissions, 1 to 12.75 GHz

RSSI dynamic range 70 dB RSSI accuracy ±4 dB

(1) Numbers given as I/C dB. (2) X / Y, where X is +N MHz and Y is –N MHz. (3) Excluding one exception at F

Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10

Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10

Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10

Single-ended mode. Measured on CC2650EM-4XS, at the SMA connector, BER = 10

–3

Difference between the incoming carrier frequency and the internally generated carrier frequency

Difference between incoming data rate and the internally generated data rate

Wanted signal at –67 dBm, modulated interferer in channel, BER = 10

–3

Wanted signal at –67 dBm, modulated interferer at ±1 MHz, BER = 10

–3

Wanted signal at –67 dBm, modulated interferer at ±2 MHz, BER = 10

–3

Wanted signal at –67 dBm, modulated interferer at ±3 MHz, BER = 10

–3

Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10

Wanted signal at –67 dBm, modulated interferer at ≥

(1)

±5 MHz, BER = 10 Wanted signal at –67 dBm, modulated interferer at

(1)

image frequency, BER = 10

Wanted signal at –67 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10

–3

30 MHz to 2000 MHz –20 dBm

Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level

Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66

Conducted measurement in a 50 Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440 class 2, FCC CFR47, Part 15 and ARIB STD-T-66

/ 2, per Bluetooth Specification.

wanted

= 3.0 V, fRF= 2440 MHz, unless otherwise noted.

DDS

–97 dBm

–96 dBm

4 dBm

0 dBm

–350 350 kHz

–750 750 ppm

–6 dB

(2)

7 / 3

(2)

34 / 25

(2)

38 / 26

(2)

42 / 29

32 dB

25 dB

(2)

3 / 26

–34 dBm

–71 dBm

–62 dBm

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5.7 1-Mbps GFSK (Bluetooth low energy Technology) – TX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output power, highest setting

Output power, highest setting Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm

Spurious emission conducted measurement

(1)

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

Differential mode, delivered to a single-ended 50-Ω load through a balun

Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load

f < 1 GHz, outside restricted bands –43 dBm f < 1 GHz, restricted bands ETSI –65 dBm f < 1 GHz, restricted bands FCC –76 dBm f > 1 GHz, including harmonics –46 dBm

= 3.0 V, fRF= 2440 MHz, unless otherwise noted.

DDS

5 dBm

2 dBm

5.8 2-Mbps GFSK (Bluetooth 5) – RX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Receiver sensitivity

Receiver saturation

Frequency error tolerance

Data rate error tolerance

Co-channel rejection

Selectivity, ±2 MHz

Selectivity, ±4 MHz

Selectivity, ±6 MHz

Alternate channel rejection, ±7

(1)

MHz

(1)

Selectivity, Image frequency

(1)

±2 MHz

Out-of-band blocking

(3)

Out-of-band blocking 2003 MHz to 2399 MHz –15 dBm Out-of-band blocking 2484 MHz to 2997 MHz –12 dBm Out-of-band blocking 3000 MHz to 12.75 GHz –10 dBm

Intermodulation

(1) Numbers given as I/C dB. (2) X / Y, where X is +N MHz and Y is –N MHz. (3) Excluding one exception at F

Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10

–3

Difference between the incoming carrier frequency and the internally generated carrier frequency

Difference between incoming data rate and the internally generated data rate

Wanted signal at –67 dBm, modulated interferer in channel, BER = 10

–3

Wanted signal at –67 dBm, modulated interferer at ±2 MHz, Image frequency is at -2 MHz BER = 10

–3

Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10

–3

Wanted signal at –67 dBm, modulated interferer at ±6 MHz, BER = 10

Wanted signal at –67 dBm, modulated interferer at ≥ ±7 MHz, BER = 10

Wanted signal at –67 dBm, modulated interferer at

(1)

image frequency, BER = 10

–3

Note that Image frequency + 2 MHz is the Cochannel. Wanted signal at –67 dBm, modulated interferer at ±2 MHz from image frequency, BER =

–3

10 30 MHz to 2000 MHz –33 dBm

Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level

/ 2, per Bluetooth Specification.

wanted

= 3.0 V, fRF= 2440 MHz, unless otherwise noted.

DDS

–92 dBm

4 dBm

–300 500 kHz

–1000 1000 ppm

–7 dB

(2)

8 / 4

(2)

31 / 26

(2)

37 / 38

(2)

37 / 36

4 dB

(2)

-7 / 26

–45 dBm

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5.9 2-Mbps GFSK (Bluetooth 5) – TX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output power, highest setting

Output power, highest setting Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm

Spurious emission conducted measurement

(1)

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

Differential mode, delivered to a single-ended 50-Ω load through a balun

Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load

f < 1 GHz, outside restricted bands –43 dBm f < 1 GHz, restricted bands ETSI –65 dBm f < 1 GHz, restricted bands FCC –76 dBm f > 1 GHz, including harmonics –46 dBm

= 3.0 V, fRF= 2440 MHz, unless otherwise noted.

DDS

5 dBm

2 dBm

5.10 5-Mbps (Proprietary) – RX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Receiver sensitivity

Receiver saturation

Frequency error tolerance

Data rate error tolerance

Co-channel rejection

Selectivity, ±4 MHz

Selectivity, ±5 MHz

Selectivity, ±8 MHz

Selectivity, ±10 MHz

Selectivity, ±12 MHz

Selectivity, ±15 MHz

Blocker rejection ±10 MHz and above

(1)

(1) Numbers given as I/C dB. (2) X / Y, where X is +N MHz and Y is –N MHz.

Differential mode. Measured at the CC2650EM-5XD SMA connector, BER = 10

–3

Difference between the incoming carrier frequency and the internally generated carrier frequency

Difference between incoming data rate and the internally generated data rate

Wanted signal 11 dB above sensitivity level, modulated interferer in channel, BER = 10

–3

Wanted signal 11 dB above sensitivity level, modulated interferer at ±4 MHz BER = 10

–3

Wanted signal 11 dB above sensitivity level, modulated interferer at ±5 MHz, BER = 10

–3

Wanted signal 11 dB above sensitivity level, modulated interferer at ±8 MHz, BER = 10

Wanted signal 11 dB above sensitivity level, modulated interferer at ±10 MHz, BER = 10

–3

Wanted signal 11 dB above sensitivity level, modulated interferer at ±12 MHz, BER = 10

–3

Wanted signal 11 dB above sensitivity level, modulated interferer at ±15 MHz, BER = 10

Wanted signal 3dB above sensitivity limit , CW interferer at ±10 MHz and above, BER = 10

–3

= 3.0 V, fRF= 2440 MHz, unless otherwise noted.

DDS

–81 dBm

-11 dBm

–300 300 kHz

–200 200 ppm

–19 dB

(2)

9 / 9

(2)

19 / 19

(2)

28 / 28

(2)

33 / 33

(2)

37/ 37

(2)

43/ 43

40 dB

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5.11 5-Mbps (Proprietary) – TX

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output power, highest setting

Output power, highest setting Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm

Occupied bandwidth 95% BW 2.4 MHz Occupied bandwidth 99% BW 3.7 MHz

Spurious emission conducted measurement

(1)

(1) Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 Class 2

(Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

Differential mode, delivered to a single-ended 50-Ω load through a balun

Measured on CC2650EM-4XS, delivered to a single-ended 50-Ω load

f < 1 GHz, outside restricted bands –43 dBm f < 1 GHz, restricted bands ETSI –65 dBm f < 1 GHz, restricted bands FCC –76 dBm f > 1 GHz, including harmonics –46 dBm

= 3.0 V, fRF= 2440 MHz, unless otherwise noted.

DDS

5 dBm

2 dBm

5.12 24-MHz Crystal Oscillator (XOSC_HF)

Tc= 25°C, V

= 3.0 V, unless otherwise noted.

DDS

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

ESR Equivalent series resistance ESR Equivalent series resistance

LMMotional inductance

(2)

CLCrystal load capacitance Crystal frequency

(2)(3)

Crystal frequency tolerance Start-up time

(3)(5)

(2) (2)

Relates to load capacitance (CLin Farads)

(2)

(2)(4)

(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device. (2) The crystal manufacturer's specification must satisfy this requirement (3) Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V (4) Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per

Bluetooth specification.

(5) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection.

(1)

6 pF < CL≤ 9 pF 20 60 Ω 5 pF < CL≤ 6 pF 80 Ω

–24

< 1.6 × 10

/ C

5 9 pF

24 MHz

–40 40 ppm

150 µs

= 3.0 V

DDS

5.13 32.768-kHz Crystal Oscillator (XOSC_LF)

Tc= 25°C, V

Crystal frequency Crystal frequency tolerance, Bluetooth low-

energy applications ESR Equivalent series resistance CLCrystal load capacitance

(1) The crystal manufacturer's specification must satisfy this requirement (2) Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance. As per

Bluetooth specification.

= 3.0 V, unless otherwise noted.

DDS

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

(1)

(1)(2)

–500 500 ppm

(1)

32.768 kHz

30 100 kΩ

6 12 pF

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5.14 48-MHz RC Oscillator (RCOSC_HF)

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Frequency 48 MHz Uncalibrated frequency accuracy ±1% Calibrated frequency accuracy Start-up time 5 µs

(1) Accuracy relative to the calibration source (XOSC_HF).

(1)

= 3.0 V, unless otherwise noted.

DDS

±0.25%

5.15 32-kHz RC Oscillator (RCOSC_LF)

Measured on the TI CC2650EM-5XD reference design with Tc= 25°C, V

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Calibrated frequency Temperature coefficient 50 ppm/°C

(1) The frequency accuracy of the Real Time Clock (RTC) is not directly dependent on the frequency accuracy of the 32-kHz RC Oscillator.

The RTC can be calibrated to an accuracy within ±500 ppm of 32.768 kHz by measuring the frequency error of RCOSC_LF relative to XOSC_HF and compensating the RTC tick speed. The procedure is explained in Running Bluetooth®Low Energy on CC2640 Without

32 kHz Crystal.

(1)

= 3.0 V, unless otherwise noted.

DDS

32.8 kHz

5.16 ADC Characteristics

Tc= 25°C, V

= 3.0 V and voltage scaling enabled, unless otherwise noted.

DDS

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage range 0 VDDS V Resolution 12 Bits Sample rate 200 ksps Offset Internal 4.3-V equivalent reference Gain error Internal 4.3-V equivalent reference

(3)

DNL INL

Differential nonlinearity >–1 LSB

(4)

Integral nonlinearity ±3 LSB

ENOB Effective number of bits

THD Total harmonic distortion

SINAD, SNDR

SFDR

Signal-to-noise and Distortion ratio

Spurious-free dynamic range

(2) (2)

Internal 4.3-V equivalent reference

(2)

, 200 ksps,

9.6-kHz input tone

Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone

Internal 4.3-V equivalent reference

(2)

, 200 ksps,

9.6-kHz input tone

Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone

Internal 4.3-V equivalent reference

(2)

, 200 ksps,

9.6-kHz input tone

Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone

Internal 4.3-V equivalent reference

(2)

, 200 ksps,

9.6-kHz input tone

Internal 1.44-V reference, voltage scaling disabled, 32 samples average, 200 ksps, 300-Hz input tone

(1)

2 LSB

2.4 LSB

9.8 BitsVDDS as reference, 200 ksps, 9.6-kHz input tone 10

11.1

–65

dBVDDS as reference, 200 ksps, 9.6-kHz input tone –69

–71

dBVDDS as reference, 200 ksps, 9.6-kHz input tone 63

dBVDDS as reference, 200 ksps, 9.6-kHz input tone 72

(1) Using IEEE Std 1241™-2010 for terminology and test methods. (2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V. (3) No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device (see Figure 5-22). (4) For a typical example, see Figure 5-23.

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+ 42 hidden pages

Texas Instruments CC2640 Users manual

Specifications and Main Features

Frequently Asked Questions

User Manual

1 Device Overview

1.1 Features

1.2 Applications

1.3 Description

1.4 Functional Block Diagram

Table of Contents

2 Revision History

3 Device Comparison

3.1 Related Products

4 Terminal Configuration and Functions

4.1 Pin Diagram – RGZ Package

4.2 Signal Descriptions – RGZ Package

4.3 Pin Diagram – RHB Package

4.4 Signal Descriptions – RHB Package

4.5 Pin Diagram – RSM Package

4.6 Signal Descriptions – RSM Package

5 Specifications

5.1 Absolute Maximum Ratings

5.2 ESD Ratings

5.3 Recommended Operating Conditions

5.4 Power Consumption Summary

5.5 General Characteristics

5.6 1-Mbps GFSK (Bluetooth low energy Technology) – RX

5.7 1-Mbps GFSK (Bluetooth low energy Technology) – TX

5.8 2-Mbps GFSK (Bluetooth 5) – RX

5.9 2-Mbps GFSK (Bluetooth 5) – TX

5.10 5-Mbps (Proprietary) – RX

5.11 5-Mbps (Proprietary) – TX

5.12 24-MHz Crystal Oscillator (XOSC_HF)

5.13 32.768-kHz Crystal Oscillator (XOSC_LF)

5.14 48-MHz RC Oscillator (RCOSC_HF)

5.15 32-kHz RC Oscillator (RCOSC_LF)

5.16 ADC Characteristics