TEXAS INSTRUMENTS CC2530F32, CC2530F64, CC2530F128, CC2530F256 Technical data

CC2530F32, CC2530F64

CC2530F128, CC2530F256

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SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

A True System-on-Chip Solution for 2.4-GHz IEEE 802.15.4 and ZigBee Applications

Check for Samples: CC2530F32, CC2530F64, CC2530F128, CC2530F256

FEATURES

2345

• RF/Layout – 2.4-GHz IEEE 802.15.4 Compliant RF

– IEEE 802.15.4 MAC Timer, General-Purpose

Timers (One 16-Bit, Two 8-Bit)

– IR Generation Circuitry

Transceiver – 32-kHz Sleep Timer With Capture

– Excellent Receiver Sensitivity and – CSMA/CA Hardware Support

Robustness to Interference

– Programmable Output Power Up to 4.5 dBm – Very Few External Components

– Accurate Digital RSSI/LQI Support – Battery Monitor and Temperature Sensor – 12-Bit ADC With Eight Channels and

– Only a Single Crystal Needed for Configurable Resolution

Asynchronous Networks

– 6-mm × 6-mm QFN40 Package

– AES Security Coprocessor – Two Powerful USARTs With Support for

– Suitable for Systems Targeting Compliance Several Serial Protocols

With Worldwide Radio-Frequency Regulations: ETSI EN 300 328 and EN 300 440 (Europe), FCC CFR47 Part 15 (US) and ARIB STD-T-66 (Japan)

• Low Power – Active-Mode RX (CPU Idle): 24 mA – Active Mode TX at 1 dBm (CPU Idle): 29 mA – Power Mode 1 (4 μs Wake-Up): 0.2 mA – Power Mode 2 (Sleep Timer Running): 1 μA – Power Mode 3 (External Interrupts): 0.4 μA – Wide Supply-Voltage Range (2 V–3.6 V)

– 21 General-Purpose I/O Pins

(19 × 4 mA, 2 × 20 mA)

– Watchdog Timer

• Development Tools – CC2530 Development Kit – CC2530 ZigBee®Development Kit – CC2530 RemoTI™ Development Kit for

RF4CE

– SmartRF™ Software – Packet Sniffer – IAR Embedded Workbench™ Available

• Microcontroller

– High-Performance and Low-Power 8051 APPLICATIONS

Microcontroller Core With Code Prefetch

– 32-, 64-, 128-, or 256-KB

In-System-Programmable Flash

– 8-KB RAM With Retention in All Power

Modes

– Hardware Debug Support

• 2.4-GHz IEEE 802.15.4 Systems

• RF4CE Remote Control Systems (64-KB Flash

and Higher)

• ZigBee Systems (256-KB Flash)

• Home/Building Automation

• Lighting Systems

• Industrial Control and Monitoring

• Peripherals – Powerful Five-Channel DMA – Integrated High-Performance Op-Amp and

• Low-Power Wireless Sensor Networks

• Consumer Electronics

• Health Care

Ultralow-Power Comparator

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2RemoTI, SmartRF, Z-Stack are trademarks of Texas Instruments. 3IAR Embedded Workbench is a trademark of IAR Systems AB. 4ZigBee is a registered trademark of the ZigBee Alliance. 5All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

CC2530F32, CC2530F64 CC2530F128, CC2530F256

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

DESCRIPTION

The CC2530 is a true system-on-chip (SoC) solution for IEEE 802.15.4, Zigbee and RF4CE applications. It enables robust network nodes to be built with very low total bill-of-material costs. The CC2530 combines the excellent performance of a leading RF transceiver with an industry-standard enhanced 8051 MCU, in-system programmable flash memory, 8-KB RAM, and many other powerful features. The CC2530 comes in four different flash versions: CC2530F32/64/128/256, with 32/64/128/256 KB of flash memory, respectively. The CC2530 has various operating modes, making it highly suited for systems where ultralow power consumption is required. Short transition times between operating modes further ensure low energy consumption.

Combined with the industry-leading and golden-unit-status ZigBee protocol stack ( Z-Stack™) from Texas Instruments, the CC2530F256 provides a robust and complete ZigBee solution.

Combined with the golden-unit-status RemoTI stack from Texas Instruments, the CC2530F64 and higher provide a robust and complete ZigBee RF4CE remote-control solution.

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Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

RESET

WATCHDOG

TIMER

IRQ CTRL

FLASH CTRL

DEBUG

INTERFACE

CLOCK MUX

and

CALIBRATION

DMA

8051 CPU

CORE

32-MHz

CRYSTAL OSC

32.768-kHz

CRYSTAL OSC

HIGH-

SPEED

RC-OSC

POWER MANAGEMENT CONTROLLER

USART 0

USART 1

TIMER 1 (16-Bit)

TIMER 3 (8-Bit)

TIMER 4 (8-Bit)

TIMER 2

(IEEE 802.15.4 MAC TIMER)

32/64/128/256-KB

FLASH

8-KB SRAM

ON-CHIP VOLTAGE

REGULATOR

POWER-ON RESET

BROWN OUT

VDD (2 V–3.6 V)

DCOUPL

RESET_N

XOSC_Q2

XOSC_Q1

P2_4

P1_7

P0_7

P2_3

P1_6

P0_6

P2_2

P1_5

P0_5

P1_2

P0_2

P2_1

P1_4

P0_4

P1_1

P0_1

P2_0

P1_3

P0_3

P1_0

P0_0

B0301-02

RADIO DATA INTERFACE

CSMA/CA STROBE PROCESSOR

RADIO REGISTERS

MODULATOR

DEMODULATOR

AND AGC

RECEIVE

CHAIN

TRANSMIT

CHAIN

FREQUENCY

SYNTHESIZER

SYNTH

RF_P RF_N

FIFO and FRAME CONTROL

12-BIT

ADC

AES

ENCRYPTION

AND

DECRYPTION

MEMORY ARBITER

SLEEP TIMER

32-kHz

RC-OSC

I/O CONTROLLER

DIGITAL

ANALOG

MIXED

ANALOG

COMPARATOR

OP-AMP

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CC2530F32, CC2530F64

CC2530F128, CC2530F256

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64 CC2530F128, CC2530F256

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

ABSOLUTE MAXIMUM RATINGS

(1)

MIN MAX UNIT

Supply voltage All supply pins must have the same voltage –0.3 3.9 V Voltage on any digital pin V

–0.3 VDD + 0.3,

Input RF level 10 dBm Storage temperature range –40 125 °C

ESD

(2)

All pads, according to human-body model, JEDEC STD 22, method A114 2 kV According to charged-device model, JEDEC STD 22, method C101 500 V

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) CAUTION: ESD sensitive device. Precaution should be used when handling the device in order to prevent permanent damage.

RECOMMENDED OPERATING CONDITIONS

MIN MAX UNIT

Operating ambient temperature range, T

–40 125 °C

Operating supply voltage 2 3.6 V

ELECTRICAL CHARACTERISTICS

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted. Boldface limits apply over the entire operating range, TA= –40°C to 125°C, VDD = 2 V to 3.6 V, and fc= 2394 MHz to 2507 MHz.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Digital regulator on. 16-MHz RCOSC running. No radio, crystals, or peripherals active. Medium CPU activity: normal flash access

32-MHz XOSC running. No radio or peripherals active. Medium CPU activity: normal flash access

32-MHz XOSC running, radio in RX mode, –50-dBm input power, no peripherals active, CPU idle

32-MHz XOSC running, radio in RX mode at -100-dBm input power (waiting for signal), no

Core current

core

consumption

Peripheral Current Consumption (Adds to core current I Timer 1 Timer running, 32-MHz XOSC used 90 μA Timer 2 Timer running, 32-MHz XOSC used 90 μA Timer 3 Timer running, 32-MHz XOSC used 60 μA Timer 4 Timer running, 32-MHz XOSC used 70 μA

peri

Sleep timer Including 32.753-kHz RCOSC 0.6 μA ADC When converting 1.2 mA

Flash

peripherals active, CPU idle 32-MHz XOSC running, radio in TX mode, 1-dBm output power, no peripherals active, CPU idle 28.7 mA 32-MHz XOSC running, radio in TX mode, 4.5-dBm output power, no peripherals active, CPU

idle Power mode 1. Digital regulator on; 16-MHz RCOSC and 32-MHz crystal oscillator off;

32.768-kHz XOSC, POR, BOD and sleep timer active; RAM and register retention Power mode 2. Digital regulator off; 16-MHz RCOSC and 32-MHz crystal oscillator off;

32.768-kHz XOSC, POR, and sleep timer active; RAM and register retention Power mode 3. Digital regulator off; no clocks; POR active; RAM and register retention 0.4 1 μA

Erase 1 mA Burst write peak current 6 mA

(1) Normal flash access means that the code used exceeds the cache storage, so cache misses happen frequently.

(1)

, no RAM access

(1)

, no RAM access

for each peripheral unit activated)

core

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≤ 3.9

3.4 mA

6.5 8.9 mA

20.5 mA

24.3 29.6 mA

33.5 39.6 mA

0.2 0.3 mA

1 2 μA

GENERAL CHARACTERISTICS

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

WAKE-UP AND TIMING

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64

CC2530F128, CC2530F256

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GENERAL CHARACTERISTICS (continued)

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Power mode 1 → active 4 μs

Power mode 2 or 3 → active 0.1 ms

Active → TX or RX

RX/TX and TX/RX turnaround 192 μs

RADIO PART

RF frequency range 2394 2507 MHz Radio baud rate As defined by [1] 250 kbps

Radio chip rate As defined by [1] 2 MChip/s Flash erase cycles 20 k cycles Flash page size 2 KB

Digital regulator on, 16-MHz RCOSC and 32-MHz crystal oscillator off. Start-up of 16-MHz RCOSC

Digital regulator off, 16-MHz RCOSC and 32-MHz crystal oscillator off. Start-up of regulator and 16-MHz RCOSC

Initially running on 16-MHz RCOSC, with 32-MHz XOSC OFF

With 32-MHz XOSC initially on 192 μs

Programmable in 1-MHz steps, 5 MHz between channels for compliance with [1]

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

0.5 ms

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64 CC2530F128, CC2530F256

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

RF RECEIVE SECTION

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C, VDD = 3 V, and fc= 2440 MHz, unless otherwise noted. Boldface limits apply over the entire operating range, TA= –40°C to 125°C, VDD = 2 V to 3.6 V, and fc= 2394 MHz to 2507 MHz.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Receiver sensitivity dBm

Saturation (maximum input level) 10 dBm

Adjacent-channel rejection, 5-MHz channel spacing

Adjacent-channel rejection, –5-MHz channel spacing

Alternate-channel rejection, 10-MHz channel spacing

Alternate-channel rejection, –10-MHz channel spacing

Channel rejection

≥ 20 MHz 802.15.4 modulated channel, stepped through all channels 57 dB ≤ –20 MHz 57

Co-channel rejection modulated at the same frequency as the desired signal. Signal –3 dB

Blocking/desensitization 5 MHz from band edge Wanted signal 3 dB above the sensitivity level, CW jammer, –33

10 MHz from band edge PER = 1%. Measured according to EN 300 440 class 2. –33 20 MHz from band edge –32 50 MHz from band edge –31

–5 MHz from band edge –35 –10 MHz from band edge –35 –20 MHz from band edge –34 –50 MHz from band edge –34

Spurious emission. Only largest spurious emission stated within each band.

30 MHz–1000 MHz < 1 GHz–12.75 GHz

Frequency error tolerance Symbol rate error tolerance

(1) Difference between center frequency of the received RF signal and local oscillator frequency. (2) Difference between incoming symbol rate and the internally generated symbol rate

(1)

(2)

PER = 1%, as specified by [1] [1] requires –85 dBm

PER = 1%, as specified by [1] [1] requires –20 dBm

Wanted signal –82 dBm, adjacent modulated channel at 5 MHz, PER = 1 %, as specified by [1].

[1] requires 0 dB Wanted signal –82 dBm, adjacent modulated channel

at –5 MHz, PER = 1 %, as specified by [1]. [1] requires 0 dB

Wanted signal –82 dBm, adjacent modulated channel at 10 MHz, PER = 1%, as specified by [1]

[1] requires 30 dB Wanted signal –82 dBm, adjacent modulated channel

at –10 MHz, PER = 1 %, as specified by [1] [1] requires 30 dB

Wanted signal at –82 dBm. Undesired signal is an IEEE from 2405 to 2480 MHz. Signal level for PER = 1%.

Wanted signal at –82 dBm. Undesired signal is 802.15.4 level for PER = 1%.

Conducted measurement with a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, dBm EN 300 440, FCC CFR47 Part 15 and ARIB STD-T-66.

[1] requires minimum 80 ppm ±150 ppm [1] requires minimum 80 ppm ±1000 ppm

–97 –92

49 dB

57 dB

–80 –57

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–88

dBm

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64

CC2530F128, CC2530F256

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RF TRANSMIT SECTION

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C, VDD = 3 V and fc= 2440 MHz, unless otherwise noted. Boldface limits apply over the entire operating range, TA= –40°C to 125°C, VDD = 2 V to 3.6 V and fc= 2394 MHz to 2507 MHz.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Delivered to a single-ended 50-Ω load through a balun using

Nominal output power dBm

Programmable output power 32 dB range

Spurious emissions Max recommended output power setting Measured conducted 25 MHz–1000 MHz (outside restricted bands) –60

according to stated regulations. Only largest spurious emission stated within each band.

Error vector magnitude (EVM) 2%

Optimum load impedance 69 + j29 Ω

(1) Texas Instruments CC2530 EM reference design is suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC

CFR47 Part 15 and ARIB STD-T-66.

(2) Margins for passing conducted requirements at the third harmonic can be improved by using a simple band-pass filter connected

between matching network and RF connector (1.8 pF in parallel with 1.6 nH); this filter must be connected to a good RF ground.

(3) Margins for passing FCC requirements at 2483.5 MHz and above when transmitting at 2480 MHz can be improved by using a lower

output-power setting or having less than 100% duty cycle.

maximum-recommended output-power setting [1] requires minimum –3 dBm

(1)

25 MHz–2400 MHz (within FCC restricted bands) –60 25 MHz–1000 MHz (within ETSI restricted bands) –60 1800–1900 MHz (ETSI restricted band) –57

5150–5300 MHz (ETSI restricted band) At 2 × fcand 3 × fc(FCC restricted band) At 2 × fcand 3 × fc(ETSI EN 300-440 and EN 300-328) 1 GHz–12.75 GHz (outside restricted bands) At 2483.5 MHz and above (FCC restricted band)

fc= 2480 MHz

Measured as defined by [1] using maximum-recommended output-power setting

[1] requires maximum 35%. Differential impedance as seen from the RF port (RF_P and RF_N)

towards the antenna

(3)

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

0 4.5 8

–8 10

–55

(2)

–42 –31 –53

–42

dBm

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64 CC2530F128, CC2530F256

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

32-MHz CRYSTAL OSCILLATOR

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Crystal frequency 32 MHz Crystal frequency accuracy

requirement ESR Equivalent series resistance 6 60 Ω C

(1) Including aging and temperature dependency, as specified by [1]

Crystal shunt capacitance 1 7 pF

Crystal load capacitance 10 16 pF

Start-up time 0.3 ms

Power-down guard time requirement is valid for all modes of operation. The 3 ms

(1)

The crystal oscillator must be in power down for a guard time before it is used again. This

need for power-down guard time can vary with crystal type and load.

–40 40 ppm

32.768-kHz CRYSTAL OSCILLATOR

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Crystal frequency 32.768 kHz

Crystal frequency accuracy

requirement ESR Equivalent series resistance 40 130 kΩ C

(1) Including aging and temperature dependency, as specified by [1]

Crystal shunt capacitance 0.9 2 pF

Crystal load capacitance 12 16 pF

Start-up time 0.4 s

(1)

–40 40 ppm

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32-kHz RC OSCILLATOR

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Calibrated frequency Frequency accuracy after calibration ±0.2% Temperature coefficient Supply-voltage coefficient Calibration time

(1) The calibrated 32-kHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 977. (2) Frequency drift when temperature changes after calibration (3) Frequency drift when supply voltage changes after calibration (4) When the 32-kHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator

is performed while SLEEPCMD.OSC32K_CALDIS is 0.

(1)

(2)

(3)

(4)

32.753 kHz

0.4 %/°C 3 %/V 2 ms

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64

CC2530F128, CC2530F256

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16-MHz RC OSCILLATOR

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Frequency Uncalibrated frequency accuracy ±18% Calibrated frequency accuracy ±0.6% ±1% Start-up time 10 μs Initial calibration time

(1) The calibrated 16-MHz RC oscillator frequency is the 32-MHz XTAL frequency divided by 2. (2) When the 16-MHz RC oscillator is enabled, it is calibrated when a switch from the 16-MHz RC oscillator to the 32-MHz crystal oscillator

(1)

(2)

is performed while SLEEPCMD.OSC_PD is set to 0.

RSSI/CCA CHARACTERISTICS

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

RSSI range 100 dB Absolute uncalibrated RSSI/CCA accuracy ±4 dB RSSI/CCA offset Step size (LSB value) 1 dB

(1) Real RSSI = Register value – offset

(1)

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

16 MHz

50 μs

73 dB

FREQEST CHARACTERISTICS

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

FREQEST range ±250 kHz FREQEST accuracy ±40 kHz FREQEST offset Step size (LSB value) 7.8 kHz

(1) Real FREQEST = Register value – offset

(1)

20 kHz

FREQUENCY SYNTHESIZER CHARACTERISTICS

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C, VDD = 3 V and fc= 2440 MHz, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

At ±1-MHz offset from carrier –110

Phase noise, unmodulated carrier At ±2-MHz offset from carrier –117 dBc/Hz

At ±5-MHz offset from carrier –122

ANALOG TEMPERATURE SENSOR

Measured on Texas Instruments CC2530 EM reference design with TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Output at 25°C 1480 12-bit ADC Temperature coefficient 4.5 /1°C Voltage coefficient 1 /0.1 V Initial accuracy without calibration ±10 °C Accuracy using 1-point calibration (entire

temperature range) Current consumption when enabled (ADC

current not included)

Measured using integrated ADC using internal bandgap voltage reference and maximum resolution

±5 °C

0.5 mA

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64 CC2530F128, CC2530F256

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

OP-AMP CHARACTERISTICS

TA= 25°C, VDD = 3 V . All measurement results are obtained using the CC2530 reference designs post-calibration.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Chopping Configuration, Register APCFG = 0x07, OPAMPMC = 0x03, OPAMPC = 0x01

Output maximum voltage VDD – 0.07 V Output minimum voltage 0.07 V Open-loop gain 108 dB Gain-bandwidth product 2 MHz Slew rate 107 V/μs Input maximum voltage VDD + 0.13 V Intput minimum voltage –55 mV Input offset voltage 40 μV

CMRR Common-mode rejection ratio 90 dB

Supply current 0.4 mA

Input noise voltage nV/√(Hz)

Non-Chopping Configuration, Register APCFG = 0x07, OPAMPMC = 0x00, OPAMPC = 0x01

CMRR Common-mode rejection ratio 90 dB

Supply current 0.4 mA

Input noise voltage nV/√(Hz)

f = 0.01 Hz to 1 Hz 1.1 f = 0.1 Hz to 10 Hz 1.7

f = 0.01 Hz to 1 Hz 60 f = 0.1 Hz to 10 Hz 65

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COMPARATOR CHARACTERISTICS

TA= 25°C, VDD = 3 V. All measurement results are obtained using the CC2530 reference designs, post-calibration.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Common-mode maximum voltage VDD V Common-mode minimum voltage –0.3 Input offset voltage 1 mV Offset vs temperature 16 µV/°C Offset vs operating voltage 4 mV/V Supply current 230 nA Hysteresis 0.15 mV

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

CC2530F32, CC2530F64

CC2530F128, CC2530F256

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ADC CHARACTERISTICS

TA= 25°C and VDD = 3 V, unless otherwise noted.

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Input voltage VDD is voltage on AVDD5 pin 0 VDD V External reference voltage VDD is voltage on AVDD5 pin 0 VDD V External reference voltage differential VDD is voltage on AVDD5 pin 0 VDD V Input resistance, signal Using 4-MHz clock speed 197 kΩ Full-scale signal

(1)

ENOB

THD

CMRR Common-mode rejection ratio >84 dB

DNL

(1)

INL

SINAD (–THD+N)

Effective number of bits bits

Useful power bandwidth 7-bit setting, both single and differential 0–20 kHz

(1)

Total harmonic distortion dB

Signal to nonharmonic ratio

Crosstalk >84 dB Offset Midscale –3 mV

Gain error 0.68 %

(1)

Differential nonlinearity LSB

Integral nonlinearity LSB

(1)

Signal-to-noise-and-distortion dB

Conversion time μs

Power consumption 1.2 mA Internal reference voltage 1.15 V Internal reference VDD coefficient 4 mV/V Internal reference temperature coefficient 0.4 mV/10°C

(1) Measured with 300-Hz sine-wave input and VDD as reference.

(1)

Peak-to-peak, defines 0 dBFS 2.97 V Single-ended input, 7-bit setting 5.7 Single-ended input, 9-bit setting 7.5 Single-ended input, 10-bit setting 9.3 Single-ended input, 12-bit setting 10.8 Differential input, 7-bit setting 6.5 Differential input, 9-bit setting 8.3 Differential input, 10-bit setting 10.0 Differential input, 12-bit setting 11.5

Single-ended input, 12-bit setting, –6 dBFS –75.2 Differential input, 12-bit setting, –6 dBFS –86.6 Single-ended input, 12-bit setting 70.2 Differential input, 12-bit setting 79.3 Single-ended input, 12-bit setting, –6 dBFS 78.8 Differential input, 12-bit setting, –6 dBFS 88.9 Differential input, 12-bit setting, 1-kHz sine (0 dBFS),

limited by ADC resolution Single-ended input, 12-bit setting, 1-kHz sine (0 dBFS),

limited by ADC resolution

12-bit setting, mean 0.05 12-bit setting, maximum 0.9 12-bit setting, mean 4.6 12-bit setting, maximum 13.3 Single-ended input, 7-bit setting 35.4 Single-ended input, 9-bit setting 46.8 Single-ended input, 10-bit setting 57.5 Single-ended input, 12-bit setting 66.6 Differential input, 7-bit setting 40.7 Differential input, 9-bit setting 51.6 Differential input, 10-bit setting 61.8 Differential input, 12-bit setting 70.8 7-bit setting 20 9-bit setting 36 10-bit setting 68 12-bit setting 132

SWRS081B –APRIL 2009– REVISED FEBRUARY 2011

Product Folder Link(s): CC2530F32 CC2530F64 CC2530F128 CC2530F256

+ 25 hidden pages

TEXAS INSTRUMENTS CC2530F32, CC2530F64, CC2530F128, CC2530F256 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

FEATURES

– High-Performance and Low-Power 8051 APPLICATIONS

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING CONDITIONS

ELECTRICAL CHARACTERISTICS

GENERAL CHARACTERISTICS

RF RECEIVE SECTION

RF TRANSMIT SECTION

32-MHz CRYSTAL OSCILLATOR

32.768-kHz CRYSTAL OSCILLATOR

32-kHz RC OSCILLATOR

16-MHz RC OSCILLATOR

RSSI/CCA CHARACTERISTICS

FREQEST CHARACTERISTICS

FREQUENCY SYNTHESIZER CHARACTERISTICS

ANALOG TEMPERATURE SENSOR

OP-AMP CHARACTERISTICS

COMPARATOR CHARACTERISTICS

ADC CHARACTERISTICS