TEXAS INSTRUMENTS bq20z75 Technical data

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bq20z75
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SBS 1.1-COMPLIANT GAS GAUGE AND PROTECTION-ENABLED IC
1
FEATURES
2
Next Generation Patented Impedance Track™
Technology accurately Measures Available Charge in Li-Ion and Li-Polymer Batteries
Better than 1% Error Over Lifetime of the
Battery
Instant Accuracy No Learning Cycle
Required
Supports the Smart Battery Specification
SBS V1.1
Flexible Configuration for 2 to 4 Series Li-Ion
and Li-Polymer Cells
Powerful 8-Bit RISC CPU With Ultra-Low
Power Modes
Full Array of Programmable Protection
Features – Voltage, Current and Temperature
Supports SHA-1 Authentication
small 38-Pin TSSOP (DBT) Package
APPLICATIONS
Notebook PCs
Medical and Test Equipment
Portable Instrumentation
SLUS723 – JULY 2007
DESCRIPTION
The bq20z75 SBS-compliant gas gauge and protection IC is a single IC solution designed for battery-pack or in-system installation. The bq20z75 measures and maintains an accurate record of available charge in Li-ion or Li-polymer batteries using its integrated high-performance analog peripherals, monitors capacity change, battery impedance, open-circuit voltage, and other critical parameters of the battery pack as well and reports the information to the system host controller over a serial-communication bus. Together with the integrated analog front-end (AFE) short-circuit and overload protection the bq20z75 maximizes functionality, safety and minimize external component count, cost and size in smart battery circuits.
The implemented Impedance Track™ gas gauging technology continuously analyzes the battery impedance, resulting in superior gas-gauging accuracy. This enables remaining capacity to be calculated with discharge rate, temperature, and cell aging all accounted for during each stage of every cycle with high accuracy.
AVAILABLE OPTIONS
PACKAGE
T
A
– 40 ° C to
85 ° C
(1) A single tube quantity is 50 units. (2) A single reel quantity is 2000 units
38-PIN TSSOP (DBT) 20-PIN TSSOP (DBT)
Tube Tape and Reel
bq20z75DBT
(1)
bq20z75DBTR
(2)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 IMPEDANCE TRACK is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2007, Texas Instruments Incorporated
www.ti.com
Coloumb
Counter
HWOver Current &
ShortCircuit
Protection
CellVoltage
Multiplexer
N-ChannelFET
Drive
PreChargeFET
& PGODDrive
PowerMode
Control
SMBD
GSRN
GSRP
ASRN
ASRP
GPOD
ZVCHG
CHG
DSG
VC5
VC4
VC3
VC2
VC1
¯¯¯¯¯
SMBC ¯¯¯¯¯¯
¯¯¯¯
CellBalancing
Temperature
Measurement
DataFlash
Memory
SMB 1.1
Impedance
Track™
GasGauging
SHA-1
Authentication
Over- & Under-
Voltage
Protection
Voltage
Measurement
OverCurrent
Protection
Oscillator
Charging Algorithm
FuseBlow
Detectionand
Logic
Over
Temperature
Protection
SAFE
PFIN
TS2
TS1
TOUT
PMS
Watchdog
Regulators
RESET
ALERT
¯¯¯¯¯¯
REG33
REG25
VCELL+
BAT
PACK
VSS
VSS
MSRT
RBI
SystemControl AFEHWControl
Pack -
RSNS 5mΩ – 20mΩ typical
Pack +
SMBC
SMBD
bq20z75
GNDVC4
VC3
VC2
VC1
VDD
OUT
CD
bq294xx
1
DSG
2
PACK
3
11
VCC
ALERT
4
12
ZVCHG
PRES
5
13
6
14
PMS
TS2
7
15
VSS
PFIN
8
16
REG33
SAFE
9
17
TOUT
SMBD
10
18 19
VCELL+
SMBC
NC
CHG
38
BAT
37
VC1
VSS
36
28
VC2
RBI
35
27
VC3
REG25
34
26
VC4
VSS
33
25
VC5
MRST
32
24
ASRP
GSRN
31
23
ASRN
GSRP
30
22
RESET
VSS VSS
29
21
20
GPOD
TS1
bq20z75
SLUS723 – JULY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SYSTEM PARTITIONING DIAGRAM
TSSOP (PW)
(TOP VIEW)
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SLUS723 – JULY 2007
TERMINAL FUNCTIONS
TERMINAL
NO. NAME
1 DSG O High side N-channel discharge FET gate drive 2 PACK IA, P
3 VCC P 4 ZVCHG O P-channel pre-charge FET gate drive 5 GPOD OD
6 PMS I connected at CHG pin. Connect to VSS to disable 0V pre-charge using charge FET connected at
7 VSS P Negative device power supply input. Connect all VSS pins together for operation of device 8 REG33 P 3.3V regulator output. Connect at least a 2.2 µ F capacitor to REG33 and VSS 9 TOUT P Termistor bias supply output
10 VCELL+ - Internal cell voltage multiplexer and amplifier output. Connect a 0.1 µ F capacitor to VCELL+ and VSS 11 ALERT I/OD 12 PRES I/OD System / Host present input. Pull up to TOUT
13 TS1 IA Temperature sensor 1 input 14 TS2 IA Temperature sensor 2 input 15 PFIN I/OD Fuse blow detection input 16 SAFE I/OD blow fuse signal output 17 SMBD I/OD SMBus data line 18 SMBC I/OD SMBus clock line 19 NC - Not Connected 20 VSS P Negative device power supply input. Connect all VSS pins together for operation of device. 21 VSS P Negative device power supply input. Connect all VSS pins together for operation of device. 22 GSRP IA Coulomb counter differential input. Connect to one side of the sense resistor 23 GSRN IA Coulomb counter differential input. Connect to one side of the sense resistor 24 MRST I Reset input for internal CPU core. connect to RESET for correct operation of device. 25 VSS P Negative device power supply input. Connect all VSS pins together for operation of device. 26 REG25 P 2.5V regulator output. Connect at least a 1 µ F capacitor to REG25 and VSS
27 RBI P 28 VSS P Negative device power supply input. Connect all VSS pins together for operation of device
29 RESET O Reset output. Connect to MSRT. 30 ASRN IA Short-circuit and overload detection differential input 31 ASRP IA Short-circuit and overload detection differential input
32 VC5 IA,P
33 VC4 IA,P
34 VC3 IA,P
35 VC2 IA,P and the negative voltage of the highest cell in 4 cell applications. Connect to VC3 in 2 cell stack
36 VC1 IA,P
(1)
I/O
Battery pack input voltage sense input. It also serves as device wake up when device is in shutdown mode.
Positive device supply input. Connect to the center connection of the CHG FET and DSG FET to ensure device supply either from battery stack or battery pack input
High voltage general purpose open drain output. Can be configured to be used in pre-charge condition
Pre-charge mode setting input. Connect to PACK to enable 0v pre-charge using charge FET CHG pin.
Alert output. In case of short circuit condition, overload condition and watchdog time out this pin will be triggered.
RAM backup input. Connect a capacitor to this pin and VSS to protect loss of RAM data in case of short-circuit condition
Cell voltage sense input and cell balancing input for the negative voltage of the bottom cell in cell stack.
Cell voltage sense input and cell balancing input for the positive voltage of the bottom cell and the negative voltage of the second lowest cell in cell stack.
Cell voltage sense input and cell balancing input for the positive voltage of the second lowest cell in cell stack and the negative voltage of the second highest cell in 4 cell applications.
Cell voltage sense input and cell balancing input for the positive voltage of the second highest cell applications
Cell voltage sense input and cell balancing input for the positive voltage of the highest cell in cell stack in 4 cell applications. Connect to VC2 in 3 or 2 cell stack applications
DESCRIPTION
bq20z75
(1) I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power
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bq20z75
SLUS723 – JULY 2007
TERMINAL FUNCTIONS (continued)
TERMINAL
NO. NAME
37 BAT O Battery stack voltage sense input 38 CHG O High side N-channel charge FET gate drive
(1)
I/O
DESCRIPTION
Absolute Maximum Ratings
Over Operating Free-Air Temperature (unless otherwise noted)
DESCRIPTION PIN UNIT
V
MAX
V
IN
V
OUT
I
SS
T
A
T
F
T
stg
T
sld
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
Supply voltage range VBAT, VCC – 0.3V to 34V
Input voltage range PFIN, SMBD, SMBC, – 0.3V to 6.0V
Output voltage range TOUT, ALERT, – 0.3 V to 6.0V
Maximum combined sink current for input pins PRES, PFIN, SMBD, 50mA
Operating free-air temperature range – 40 ° C to 85 ° C Functional temperature – 40 ° C to 100 ° C Storage temperature range – 65 ° C to 150 ° C Lead temperature (soldering, 10s) 300 ° C
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1)
PACK, PMS – 0.3V to 34V VC(n)-VC(n+1); n = 1, – 0.3V to 8.5V
2, 3, 4 VC1, VC2, VC3, VC4 – 0.3V to 34V VC5 – 0.3V to 1.0V
DISP TS1, TS2, VCELL+, – 0.3 V to V
PRES; ALERT MRST, GSRN, GSRP, – 0.3 V to V
RBI ASRN, ASRP – 1.0V to 1.0V DSG, CHG, GPOD – 0.3V to 34V ZVCHG – 0.3V to V
REG33, RESET – 0.3 V to 7.0V REG25, SAFE, TOUT – 0.3V to 2.75V
SMBC
REG25
REG25
+ 0.3 V
+ 0.3 V
BAT
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bq20z75
SLUS723 – JULY 2007
Recommeded Operating Conditions
over operating free-air temperature range (unless otherwise noted)
PARAMETER PIN MIN NOM MAX UNIT
V
SUP
V Minimum startup voltage VCC, BAT, PACK 5.5 V
STARTUP
V
IN
V
GPOD
A
GPOD
C
REG25
C
REG33
C
VCELL+
C
PACK
(1) Use external resitor to limit current to GPOD to 1mA in high voltage application. (2) External resistor to limit inrush current PACK pin required.
Supply voltage VCC, VBAT 4.5 25 V
VC(n) – VC(n+1); n = 1,2,3,4 0 5 V VC1, VC2, VC3, VC4 0 V
SUP
Input Voltage Range VC5 0 0.5 V
ASRN, ASRP – 0.5 0.5 V
PACK, PMS 0 25 V Output Voltage Range GPOD 0 25 V Drain Current
(1)
GPOD 1 mA
2.5V LDO Capacitor REG25 1 µF
3.3V LDO Capacitor REG33 2.2 µF Cell Voltage Output Capacitor VCELL+ 0.1 µF PACK input block resistor
(2)
PACK 1 k
V
Electrical Characteristics
over operating free-air temperature range (unless otherwise noted), TA= – 40 ° C to 85 ° C, V 14V, C
SUPPLY CURRENT
I
NORMAL
I
SLEEP
I
SHUTDOW
N
SHUTDOWN WAKE; TA= 25 ° C (unless otherwise noted)
I
PACK
SRx WAKE FROM SLEEP; TA= 25 ° C (unless otherwise noted)
V
WAKE
V
WAKE_A
CR
V
WAKE_T
CO
t
WAKE
POWER-ON RESET
V
IT
= 1µF, C
REG25
= 2.2µF; typical values at TA= 25 ° C (unless otherwise noted)
REG33
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Firmware running 550 µA Sleep Mode CHG FET on; DSG FET on 124 µA
CHG FET off; DSG FET on 90 µA CHG FET off; DSG FET off 52 µA
Shutdown Mode 0.1 1 µA
Shutdown exit at V
STARTUP
threshold 1 µA
Positive or negative wake threshold with
1.00 mV, 2.25 mV, 4.5 mV and 9 mV 1.25 10 mV programmable options
V
= 1.0mV;
WAKE
IWAKE=0, RSNS1=0, RSNS0=1; V
= 2.25mV;
WAKE
IWAKE =1, RSNS1=0, RSNS0=1; – 0.8 0.8
Accuracy of V
WAKE
IWAKE =0, RSNS1=1, RSNS0=0; V
= 4.5mV;
WAKE
IWAKE =1, RSNS1=1, RSNS0=1; – 1.0 1.0 IWAKE =0, RSNS1=1, RSNS0=0;
V
= 9mV;
WAKE
IWAKE =1, RSNS1=1, RSNS0=1;
Temperature drift of V
accuracy 0.5 %/ ° C
WAKE
Time from application of current and wake of bq20z75
Negative-going voltage input Voltage at REG25 pin 1.70 1.80 1.90 V
= 2.41 V to 2.59 V, V
REG25
– 0.7 0.7
– 1.4 1.4
1 10 ms
=
BAT
mV
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bq20z75
SLUS723 – JULY 2007
Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted), TA= – 40 ° C to 85 ° C, V 14V, C
V
hys
t
RST
WATCHDOG TIMER
t
WDTINT
t
WDWT
2.5V LDO; I
V
REG25
Δ V
REG25
TEMP
Δ V
REG25L
INE
Δ V
REG25L
OAD
I
REG25MA
X
3.3V LDO; I
V
REG33
Δ V
REG33
TEMP
Δ V
REG33L
INE
Δ V
REG33L
OAD
I
REG33MA
X
THERMISTOR DRIVE
V
TOUT
R
DS(ON)
VCELL+ HIGH VOLTAGE TRANSLATION
V
VCELL+O
UT
V
VCELL+R
EF
V
VCELL+P
ACK
V
VCELL+B
AT
CMMR Common mode rejection ratio VCELL+ 40 dB
K Cell scale factor
= 1µF, C
REG25
= 2.2µF; typical values at TA= 25 ° C (unless otherwise noted)
REG33
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Hysteresis V RESET active low time 100 250 560 µs
V
IT+
IT
active low time after power up or watchdog reset
Watchdog start up detect time 250 500 1000 ms Watchdog detect time 50 100 150 µs
REG33OUT
Regulator output voltage 2.41 2.5 2.59 V Regulator output change with I
temperature 100 ° C Line regulation 3 10 mV
Load Regulation mV
Current Limit 5 40 75 mA
REG25OUT
Regulator output voltage 3 3.3 3.6 V Regulator output change with I
temperature 100 ° C Line regulation 3 17 mV
Load Regulation mV
Current Limit mA
Output voltage I TOUT pass element resistance 50 100
= 0mA; TA= 25 ° C (unless otherwise noted)
= 0mA; TA= 25 ° C (unless otherwise noted)
4.5 < VCC or BAT < 25V; I 16mA; TA= – 40 ° C to 100 ° C
REG25OUT
= 2mA; TA= – 40 ° C to
5.4 < VCC or BAT < 25V; I = 2mA
0.2mA I
0.2mA I
REG25OUT REG25OUT
REG25OUT
REG25OUT
2mA 7 25 16mA 15 50
drawing current until REG25 = 2V to 0V
4.5 < VCC or BAT < 25V; I 25mA; TA= – 40 ° C to 100 ° C
REG33OUT
= 2mA; TA= – 40 ° C to
5.4 < VCC or BAT < 25V; I = 2mA
0.2mA I
0.2mA I
REG33OUT REG33OUT
REG33OUT
REG33OUT
2mA 7 17 25mA 40 100
drawing current until REG33 = 3V 25 100 145 short REG33 to VSS, REG33 = 0V 12 65
= 0mA; TA= 25 ° C V
TOUT
I
= 1mA; R
TOUT
V
) / 1mA; TA= – 40 ° C to 100 ° C
TOUT
= (V
DS(ON)
REG25
VC(n) VC(n+1) = 0V; TA= – 40 ° C to 100 ° C
VC(n) VC(n+1) = 4.5V; TA= – 40 ° C to 100 ° C
Translation output 0.965 0.975 0.985 V
internal AFE reference voltage ; TA= – 40 ° C to 100 ° C
Voltage at PACK pin; TA= – 40 ° C to 0.98*V 100 ° C
Voltage at BAT pin; TA= – 40 ° C to 0.98*V 100 ° C 18
K= {VCELL+ output (VC5=0V; VC4=4.5V) VCELL+ output 0.147 0.150 0.153 (VC5=0V; VC4=0V)}/4.5
K= {VCELL+ output (VC2=13.5V; VC1=18V) VCELL+ output 0.147 0.150 0.153 (VC5=13.5V; VC1=13.5V)}/4.5
= 2.41 V to 2.59 V, V
REG25
50 150 250 mV
± 0.2 %
± 0.2 %
REG25
0.950 0.975 1
0.275 0.3 0.375
PAC
/18
K
BAT
V
PACK
/ 1.02*V
V
BAT
1.02*V
/18
CK
/18
PA
/18
BA
/18
T
=
BAT
V
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Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted), TA= – 40 ° C to 85 ° C, V 14V, C
I
VCELL+OU
T
V
VCELL+O
I
VCnL
CELL BALANCING
R
BAL
HARDWARE SHORT CIRCUIT AND OVERLOAD PROTECTION; TA= 25 ° C (unless otherwise noted)
V
(OL)
V
(SCC)
V
(SCD)
t
da
t
pd
FET DRIVE CIRCUIT; TA= 25 ° C (unless otherwise noted)
V
DSGON
V
CHGON
V
DSGOFF
V
CHGOFF
t
R
t
F
V
ZVCHG
LOGIC; TA= – 40 ° C to 100 ° C (unless otherwise noted)
R
PULLUP
V
OL
LOGIC SMBC, SMBD, PFIN, PRES, SAFE, ALERT
V
IH
V
IL
= 1µF, C
REG25
= 2.2µF; typical values at TA= 25 ° C (unless otherwise noted)
REG33
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Drive Current to VCELL+ capacitor 12 18 µ A
CELL offset error – 18 – 1 18 mV
VC(n) VC(n+1) = 0V; VCELL+ = 0V; TA= – 40 ° C to 100 ° C
CELL ouput (VC2 = VC1 = 18V) – CELL output (VC2 = VC1 = 0V)
VC(n) pin leakage current VC1, VC2, VC3, VC4, VC5 = 3V – 1 0.01 1 µ A
R
for internal FET switch at V
internal cell balancing FET resistance 200 400 600
OL detection threshold voltage accuracy V
SCC detection threshold voltage accuracy
SCD detection threshold voltage accuracy
DS(on)
= 2V; TA= 25 ° C
V
= 25mV (min) 15 25 35
OL
= 100mV; RSNS = 0, 1 90 100 110 mV
OL
V
= 205mV (max) 185 205 225
OL
V
= 50mV (min) 30 50 70
SCC
V
= 200mV; RSNS = 0, 1 180 200 220 mV
SCC
V
= 475mV (max) 428 475 523
SCC
V
= – 50mV (min) – 30 – 50 – 70
SCD
V
= – 200mV; RSNS = 0, 1 – 180 – 200 – 220 mV
SCD
V
= – 475mV (max) – 428 – 475 – 523
SCD
DS
Delay time accuracy ± 15.25 µ s Protection circuit propagation delay 50 µ s
V
= V
V
; V
DSG pin output on voltage 10M ;DSG and CHG on; TA= 8 12 16 V
DSGON
DSG
PACK
=
GS
– 40 ° C to 100 ° C V
= V
V
; V
CHG pin output on voltage 10M ;DSG and CHG on; TA= 8 12 16 V
CHGON
CHG
BAT
=
GS
– 40 ° C to 100 ° C DSG pin output off voltage V CHG pin output off voltage V
CL=4700pF; V Rise time µ s
4V
CL=4700pF; V
CL=4700pF; V Fall time µ s
V
CL=4700pF; V
V
= V
DSGOFF CHGOFF
+ 1V
PACK
+ 1V
BAT
V
DSG
PACK
= V
V
CHG
BAT
PACK
BAT PACK
BAT
DSG V
CHG V
+ V
DSGON
+ V
CHGON
+
PACK
+ 4V 400 1000
BAT
DSG
CHG
ZVCHG clamp voltage BAT = 4.5V 3.3 3.5 3.7 V
Internal pullup resistance k
ALERT 60 100 200
RESET 1 3 6
ALERT 0.2 Logic low output voltage level 0.4 V
RESET; V
I
RESET
GPOD; I
= 7V; V
BAT
= 200 µ A
= 50 µ A 0.6
GPOD
= 1.5V;
REG25
High-level input voltage 2.0 V Low-level input voltage 0.8 V
= 2.41 V to 2.59 V, V
REG25
400 1000
40 200
40 200
bq20z75
SLUS723 – JULY 2007
0.2 V
0.2 V
=
BAT
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