Datasheet bq2002E, bq2002G Datasheet (TEXAS INSTRUMENTS)

bq2002E/G

NiCd/NiMH Fast-Charge Management ICs

Features

Fast charge of nickel cadmium

➤

or nickel-metal hydride batter
ies

Direct LED output displays

➤

chargestatus
Fast-charge terminationby -∆V,

➤

maximum voltage, maximum
temperature, and maximum
time

Internal band-gap voltage ref

➤

erence
Optional top-off charge

➤

Selectable pulse trickle charge

➤

rates

➤

Low-power mode

➤

8-pin 300-mil DIP or 150-mil
SOIC

Pin Connections

TM

LED

BAT
V

SS

1

2

3

4

8

7

6

5

CC

INH

V
TS

CC

General Description

The bq2002E a n d bq2002G Fast­Charge ICs are low-cost CMOS bat

­tery-charge controllers providing reli
able charge termination for both NiCd
and NiMH battery applications. Co n
trolling a current-limited or con
stant-current supply allows th e
bq2002E/G to be the basis for a cost­effective stand-alone or system-inte
grated charger. The bq2002E/G inte
grates fast charge with optional top-off
and pulsed- trickle control in a single

­IC for charging one or more NiCd or
NiMH battery cells.

Fast charge is initiated on application
of the charging supply or battery re
placement. Fo r safety, fast charge is
inhibited if the battery temperature
and voltage are outside configured
limits.

Pin Names

TM Timer mode select input
LED
BAT Battery voltage input
V

SS

Charging status output

System ground

Fast charge is terminated by any of
the following:

Peak voltage detection(PVD)

n

-

­Negative delta voltage(-∆V)

n

-

Maximum voltage

n

­Maximum temperature

n

Maximum time

n

-

-

After fast charge, the bq2002E/G op
tionally tops-off and pulse-trickles the
battery per the pre-configured limits.
Fast charge may be inhibited using
the INH pin. The bq2002E/G may
also be placed in low-standby-power
mode to reduce system power con-

-

sumption.
The bq2002E differs from the

bq2002G only in that a slightly dif­ferent se t of fast-charge and top-off
time limits is available. All differ­ences between the two ICs are illus­trated in Table 1.

TS Temperature senseinput
V

CC

Supply voltage input
INH Charge inhibit input
CC Charge control output

-

8-Pin DIP or

Narrow SOIC

PN-200201.eps

bq2002E/G Selection Guide

Part No. LBAT TCO HTF LTF

bq2002E

bq2002G

SLUS132 - FEBRUARY 1999

0.175
V

0.175
V

∗

0.5

∗

0.6

V

CC

CC

CC

∗

0.5

∗

V

CC

V

0.6
V

∗

CC

∗

CC

None

None

PVD Fast Charge t

-∆V

✔
✔

✔

✔
✔

✔

1

MTO

Top-Off Maintenance

C/2 200 None C/32

1C 80 C/16 C/32
2C 40 None C/32

C/2 160 None C/32

1C 80 C/16 C/32
2C 40 None C/32

bq2002E/G

Pin Descriptions

TM

LED

BAT

V

SS

TS

V

CC

INH

T ime rmodeinput

A three-level input that controls the settings
for the fast charge safety timer, voltage ter
mination mode, top-off, pulse-trickle, and
voltage hold-off time.

Charging output status

Open-drain output that indicates the charging
status.

Battery input voltage

Thebattery voltage sense input. The input to
this pin is created by a high-impedance re
sistor divider network connected between
the positive and negative terminals of the
battery.

System ground
Temperature sense input

Input for an external battery temperature
monitoring thermistor.

Supply voltage input

5.0V±20%power input.

Charge inhibit input

When high, INH suspends the fast charge in
progress. When returned low, the IC re-

sumes operation at the point where initially
suspended.

CC

-

Charge control output

An open-drain output used to control the
charging current to the battery. CC switch
ing to high impedance (Z) enables charging
current to flow, and low to inhibit charging
current. CC is modulated to provide top-off,
ifenabled,and pulse trickle.

Functional Description

Figure 2 shows a state diagram and Figure 3 shows a
block diagram ofth e bq2002E/G.

-

Battery Voltageand Temperature
Measurements

Battery voltage and temperature are monitored for
maximum allowable values. The voltage presented on
the battery sense input, BAT, should represent a
single-cell potential for the battery under charge. A
resistor-dividerratio of

RB1

= N - 1

RB2

is recommended to maintain the battery voltage within
the valid range, where N is th e number of cells, RB1 is
the resistor connected to the positive battery terminal,
and RB2 is the resistor connected to the negative bat­tery terminal. SeeFigure 1.

Note:

This resistor-divider network input impedance to

end-to-end should be at least 200k

Ω

and less than 1MΩ.

-

V

CC

RT

BAT

bq2002E/G

V

BAT pin connection Thermistor connection

RB1

RB2

SS

NTC = negative temperature coefficient thermistor.

R3

R4

Mid-level

setting for TM

V

CC

TM

bq2002E/G

V

T

S

SS

PACK +

N
T
C

Fg2002E/G01.eps

Figure 1. Voltage and Temperature Monitoring and TM Pin Configuration

2

bq2002E/G

V or

(PVD or ­Maximum Time Out)
and TM = Low

Top-off

LED = Z

V

2V or

BAT

V

VCC/2 or

TS

Maximum Time Out

OSC

V

CC

Chip on

4.0V

V

TS

Battery Voltage

too High?

< 2V

V

BAT

Battery Voltage

too Low?

V

0.175

> 0.6

< V

CC

V

CC

Fast

LED =

Low

V

> 2V or

BAT

VTS < VCC/2 or
((PVD or - V or
Maximum Time Out)
and TM

BAT

Battery

Temperature?

Low)

Figure 2. State Diagram

Clock

Phase

Generator

V
V
V

BAT
BAT
TS

V

BAT

V

BAT

V

TS

> 0.175
< 2V, and

> V

CC

2V

>

< 0.175

< 0.6

/2

VCC,

V

V

CC

CC

Trickle

LED =

Flash

Trickle

LED = Z

Charge
Pending

V

BAT

V

> 2V

BAT

2V

2

SD

s

p

.e

2C

00

TM

INH

Charge-Control

State Machine

Power-On

Reset

Timing

Control

Sample

History

PVD, - V

ALU

HTF

Check

CC

LED

Figure 3. Block Diagram

3

TCO

Check

TS

Power

Down

Voltage

Reference

A to D

Converter

LBAT

Check

MCV

Check

V

CC

V

SS

Bd2002CEG.eps

BAT

bq2002E/G

Fast ChargingVCC = 0 Fast Charging

(optional)

CC Output

73ms

1.17s 1.17s

Charge initiated by application of power

LED

Figure 4. Charge Cycle Phases

Aground-referenced negative temperature coefficient ther­mistor placed near the battery may be used as a low-cost
temperature-to-voltage transducer. The temperature
sense voltage input at TS is developed using a resistor­thermistor network between V

and VSS. See Figure 1.

CC

Starting A Charge Cycle

Either of twoevents starts a chargecycle(see Figure 4):

Pulse-TrickleTop-Off

See Table 1

Charge initiated by battery replacement

1.Application ofpower to V

or

CC

2. Voltage at th e BAT pin falling through the maximum
cell voltage V

MCV

where

V

MCV

= 2V±5%.

If the battery is within th e configured temperature and
voltage limits, the IC begins fast charge. The valid bat­tery voltage range is V

LBAT<VBAT<VMCV

,where

TD2002EG.eps

Table 1. Fast-Charge Safety Time/Hold-Off/Top-Off Table

Typical Fast-

Charge and

-

Corre

sponding

Fast-Charge

Rate TM Termination

Time Limits

(minutes)

bq2002E bq2002G

Typical PVD

and -∆V

Hold-Off Time

(seconds)

Top-Off

Rate

Pulse­Trickle

Rate

C/2 Mid PVD 200 160 300 Disabled C/32 73 18.7

1C Low PVD 80 80 150 C/16 C/32 37 18.7

Top-Off

2C High -

Notes:

Typical conditions = 25°C, VCC= 5.0V
Mid = 0.5*V
Tolerance on all timing is

V 40 40 75 Disabled C/32 18 9.4

∆

0.5V

±

CC

±

12%.

4

Pulse-

Trickle

Width

(ms)

Maximum

Synchro

nized

Sampling

Period

(seconds)

-

bq2002E/G

V

= 0.175∗VCC±

LBAT

The valid temperature range isV

= 0.6∗VCC±

V

HTF

20%

TS>VHTF

5%.

where

If the battery voltage or temperature is outside of these
limits, th e IC pulse-trickle charges until the next new
chargecyclebegins.

If V

MCV<VBAT<VPD

newbattery is inserted, a delay of0.35 to 0.9s is imposed

(see “Low-Power Mode”) when a

before the new charge cyclebegins.
Fast charge continues until termination by one or more of

the five possible termination conditions:

Peak voltage detection (PVD)

n

Negative delta voltage (-∆V)

n

Maximum voltage

n

Maximum temperature

n

Maximum time

n

PVD and -∆V Termination

There are two modes for voltage termination, depending
on the state ofTM. For ­than any previously measured value by 12mV

∆

V (TM = high), if V

is lower

BAT

±

3mV, fast
charge is terminated. For PVD (TM = low or mid), a de­crease of 2.5mV
and -

∆

Vtests are valid in the range 1V<V

±

2.5mV terminates fast charge. The PVD

BAT

<2V.

Synchronized Voltage Sampling

Voltage sampling at the BAT pin for PVD and -∆Vtermi
nation may be synchronized to an external stimulus us­ing the INH input. Low-high-low input pulses between
100ns a nd 3.5ms in width must be applied at the INH
pin with a frequency greater than the “maximum syn
chronized sampling period” set by the state of the TM
pin as shown in Table 1. Voltage is sampled on the fal
ling edgeofsuch pulses.

If the time between pulses is greater than the synchro
nizing period, voltage sampling “free-runs” at once every
17 seconds. A sample is taken by averaging together
voltage measurements taken 57
32 measurements in PVD mode and 16 measurements
in -

∆

V mode. The resulting sample periods (9.17 and

18.18ms, respectively) filter out harmonics centered
around 55 and 109Hz. This technique minimizes the ef
fect of any AC line ripple that may feed through the
power supply from either 50or60Hz ACsources.

If the INH input remains high for more than 12ms, the
voltage sample history kept by the IC a nd used for PVD
and -

∆

V termination decisions is erased and a new his
tory is started. Such a reset is required when transition
ing from free-running to synchronized voltage sampling.

µ

s apart. The IC takes

The response of the IC to pulses less than 100ns i n
width or between 3.5ms and 12ms is indeterminate. Tol

±

erance on all timing is

12%.

Voltage TerminationHold-off

A hold-off period occurs at the start of fast charging.
During the hold-off time, the PVD a n d -

∆

Vterminations
are disabled. This avoids premature termination on the
voltage spikes sometimes produced by older batteries
when fast-charge current is first applied. Maximum
voltage and temperature terminations are not affected
by the hold-off period.

Maximum Voltage, Temperature,and Time

Any time the voltage on the BA T pin exceeds the maxi
mum cell voltage,V
chargeis terminated.

Maximum temperature termination occurs anytime t h e
voltage on the TS pin falls below the temperature cut-off
threshold V

TCO

Maximum charge time is configured using the TM pin.
Time settings a re available for corresponding charge
rates of C/2, 1C, and 2C. Maximum time-out termina­tion is enforced on the fast-charge phase, then reset, and
enforced again on the top-off phase, if selected. There is
notime limit onthe trickle-charge phase.

, fast charge or optional top-off

MCV

where

V

TCO

= 0.5∗VCC±

5%.

Top-off Charge

An optional top-off charge phase may be selected to
follow fast charge termination for 1C and C/2 rates.

­This phase may be necessary on NiMH or other ba t-

tery chemistries that have a tendency to terminate
charge before reaching full capacity. With top-off en
abled, charging continues at a r educed ra te after

­fast-charge termination for a period of time selected

by t h e TM pin. (See Table 1.) During top-off, the CC

­pin is modulated at a duty cycle of 73ms active for

every 1097ms inactive. This modulation results in a n

-

average rate 1/16th that ofthe fast charge rate. Maxi
mum voltage, time, an d temperature are the only ter
mination methods enabled during top-off.

Pulse-Trickle Charge

Pulse-trickle is used to compensate for self-discharge
while the battery is idle in the charger. The battery is

­pulse-trickle charged by driving the CC pin active once

every 1.17s for the period specified in Table 1. This re
sults in a trickle rate ofC/32.

TM Pin

­The TM pin is a three-level pin used to select th e

­chargetimer,top-off, voltage termination mode, trickle

-

-

-

-

-

-

5

bq2002E/G

rate, and voltage hold-off period options. Table 1 d e
scribes the states selected by t he TM pin. The mid­level selection input is developed by a resistor di
vider between V
on TM at V

CC

and ground that fixes the voltage

CC

/2±0.5V. See Figure 4.

Charge Status Indication

Afast charge in progress is uniquely indicated when the
LED

pin goes low. The LED pin is driven to the high-Z
state for all conditions other than fast charge. Figure 2
outlines the state of the LED

pinduring charge.

Charge Inhibit

Fast charge and top-off may be inhibited by using th e
INH pin. When high, INH suspends all fast charge and
top-off activity a n d the internal charge timer. INH
freezes the current state of LED
Temperature monitoring is not affected by the INH pin.
During charge inhibit, the bq2002E/G continues to
pulse-trickle charge the battery per the TM selection.
When INH returns low, charge control and the charge
timer resume from the point where INHbecame active.

until inhibit is removed.

-

Low-Power Mode

The IC enters a low-power state when V

­above the power-down threshold (V

V

= VCC- (1V±0.5V)

PD

Both the CC pin and the LED

pin are driven to t he

PD

)where

BAT

high-Z state. The operating current is reduced to less
than 1

µ

A in this mode. When V
below V
newchargecyclebegins.

, t he IC pulse-trickle charges until the next

PD

returns to a value

BAT

is driven

6

bq2002E/G

Absolute Maximum Ratings

Symbol Parameter Minimum Maximum Unit Notes

V

CC

V

T

T

OPR

T

STG

T

SOLDER

T

BIAS

Note:

VCCrelative to V

SS

DC voltage applied on any pin
excluding V

relative to V

CC

SS

-0.3 +7.0 V

-0.3 +7.0 V

Operating ambient temperature 0 +70 °C Commercial
Storage temperature -40 +85 °C
Soldering temperature - +260 ° C 10 sec max.
Temperature under bias -40 +85 °C

Permanent device damage may occur if

Absolute Maximum Ratings

are exceeded. Functional opera
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.

-

-

DC Thresholds (T

= 0 to 70°C; V

A

CC

20%)

±

Symbol Parameter Rating Tolerance Unit Notes

V

TCO

V

HTF

V

MCV

V

LBAT

-

∆

V

PVD BAT input change for

Temperature cutoff 0.5*V

High temperature fault

0.6

∗

Maximum cell voltage 2

Minimum cell voltage

BAT input change for

-

∆

Vdetection

0.175

-12

-2.5

VCC

∗

5% V V

CC

V

CC

±

±

5%

5% V

±

±

20%

±

3

±

2.5

TS

fast charge and top-off

VV

TS<VHTF

start

V

BAT

fast charge and top-off

VV

BAT<VLBAT

start

mV

mV

inhibits/terminates

V

≤

TCO

inhibits fast charge

≥

V

inhibits/terminates

MCV

inhibits fast charge

PVDdetection

7

bq2002E/G

Recommended DC Operating Conditions (T

= 0 to 70°C)

A

Symbol Condition Minimum Typical Maximum Unit Notes

V

V

V

V

V

V

V

Supply voltage 4.0 5.0 6.0 V

CC

-∆V, PVD detect voltage 1 - 2 V

DET

Battery input 0 - V

BAT

Thermistor input 0.5 - V

TS

Logic input high 0.5 - - V INH

IH

Logic input high V

Logic input mid

IM

Logic input low - - 0.1 V INH

IL

- 0.5 - - V TM

CC

V

CC

- 0.5

2

-

CC

CC

V

CC

+

05

2

V

VVTS< 0.5V prohibited

.

VTM

Logic input low - - 0.5 V TM

V

V

I

CC

I

SB

Logic output low - - 0.8 V LED,CC,IOL= 10mA

OL

Power down VCC- 1.5 - VCC- 0.5 V V

PD

Supply current - - 500

Standby current - - 1

BAT

down bq2002E/G;
V

BAT

normal operation.

A Outputs unloaded,

µ

V

CC

AVCC= 5.1V, V

µ

V

max. powers

≥

PD

< VPDmin. =

= 5.1V

BAT

= V

PD

I

OL

I

L

I

OZ

Note:

LED,CCsink 10 - - mA @VOL= VSS+ 0.8V

Input leakage - -

Output leakage in

-5 - -

1

±

A INH, CC,V = VSSto V

µ

A LED,CC

µ

high-Z state

All voltages relative to VSS.

8

CC

bq2002E/G

Impedance

Symbol Parameter Minimum Typical Maximum Unit

R

BAT

R

TS

Battery input impedance 50 - - M
TS input impedance 50 - - M

Ω
Ω

Timing (T

Symbol Parameter Minimum Typical Maximum Unit Notes

d

FCV

t

DLY

Note:

= 0 to +70°C; V

A

Time base variation -12 - 12 %

Start-up delay 0.35 - 0.9 s Starting from V

Typical is at TA= 25°C, VCC= 5.0V.

CC

±

10%)

MCV<VBAT<VPD

9

bq2002E/G

8-Pin DIP(PN

E1

E

e

)

D

C

8-Pin SOIC Narrow (SN)

8-Pin PN(0.300" DIP

Dimension

A 0.160 0.180 4.06 4.57

A1 0.015 0.040 0.38 1.02

B 0.015 0.022 0.38 0.56

B1 0.055 0.065 1.40 1.65

A

A1

L

S

B1

B

G

C 0.008 0.013 0.20 0.33
D 0.350 0.380 8.89 9.65
E 0.300 0.325 7.62 8.26

E1 0.230 0.280 5.84 7.11

e 0.300 0.370 7.62 9.40
G 0.090 0.110 2.29 2.79
L 0.115 0.150 2.92 3.81

S 0.020 0.040 0.51 1.02

Min. Max. Min. Max.

)

Inches Millimeters

8-Pin SN(0.150" SOIC

Inches Millimeters

Dimension

A 0.060 0.070 1.52 1.78

A1 0.004 0.010 0.10 0.25

B 0.013 0.020 0.33 0.51
C 0.007 0.010 0.18 0.25
D 0.185 0.200 4.70 5.08
E 0.150 0.160 3.81 4.06

e 0.045 0.055 1.14 1.40
H 0.225 0.245 5.72 6.22
L 0.015 0.035 0.38 0.89

Min. Max. Min. Max.

)

10

PACKAGE OPTION ADDENDUM

www.ti.com

7-May-2007

PACKAGING INFORMATION

Orderable Device Status

(1)

Package

Type

Package
Drawing

Pins Package

Qty

Eco Plan

BQ2002EPN ACTIVE PDIP P 8 50 Pb-Free

BQ2002EPNE4 ACTIVE PDIP P 8 50 Pb-Free

BQ2002ESN ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

BQ2002ESNG4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

BQ2002ESNTR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

BQ2002ESNTRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

BQ2002GPN ACTIVE PDIP P 8 50 Pb-Free

BQ2002GPNE4 ACTIVE PDIP P 8 50 Pb-Free

BQ2002GSN ACTIVE SOIC D 8 75 Green(RoHS &

no Sb/Br)

BQ2002GSNG4 ACTIVE SOIC D 8 75 Green (RoHS &

no Sb/Br)

BQ2002GSNTR ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

BQ2002GSNTRG4 ACTIVE SOIC D 8 2500 Green (RoHS &

no Sb/Br)

(1)

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(RoHS)

(RoHS)

(RoHS)

(RoHS)

(2)

Lead/Ball Finish MSL Peak Temp

CU NIPDAU N / A for Pkg Type

CU NIPDAU N / A for Pkg Type

CU NIPDAU Level-1-260C-UNLIM

CU NIPDAU Level-1-260C-UNLIM

CU NIPDAU Level-1-260C-UNLIM

CU NIPDAU Level-1-260C-UNLIM

CU NIPDAU N / A for Pkg Type

CU NIPDAU N / A for Pkg Type

CU NIPDAU Level-1-260C-UNLIM

CU NIPDAU Level-1-260C-UNLIM

CU NIPDAU Level-1-260C-UNLIM

CU NIPDAU Level-1-260C-UNLIM

(3)

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.

7-May-2007

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

TAPE AND REEL INFORMATION

19-Mar-2008

*All dimensions are nominal

Device Package

BQ2002ESNTR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
BQ2002GSNTR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

Type

Package

Drawing

Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

A0 (mm) B0 (mm) K0 (mm) P1

(mm)W(mm)

Pin1

Quadrant

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

19-Mar-2008

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

BQ2002ESNTR SOIC D 8 2500 340.5 338.1 20.6

BQ2002GSNTR SOIC D 8 2500 340.5 338.1 20.6

Pack Materials-Page 2

IMPORTANT NOTICE

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Products Applications

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Interface interface.ti.com Medical www.ti.com/medical
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